JP2020047796A - 記憶装置 - Google Patents
記憶装置 Download PDFInfo
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- JP2020047796A JP2020047796A JP2018175448A JP2018175448A JP2020047796A JP 2020047796 A JP2020047796 A JP 2020047796A JP 2018175448 A JP2018175448 A JP 2018175448A JP 2018175448 A JP2018175448 A JP 2018175448A JP 2020047796 A JP2020047796 A JP 2020047796A
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- aluminum oxide
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000011777 magnesium Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 11
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 11
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 11
- 238000003860 storage Methods 0.000 claims description 73
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000000460 chlorine Substances 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000011572 manganese Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 23
- 239000000126 substance Substances 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 230
- 230000010287 polarization Effects 0.000 description 31
- 230000006870 function Effects 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 20
- 239000013078 crystal Substances 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 4
- 150000002736 metal compounds Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- 241000252073 Anguilliformes Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005308 ferrimagnetism Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
第1の実施形態の記憶装置は、第1の導電層と、第2の導電層と、第1の導電層と第2の導電層との間に設けられ、マグネシウム(Mg)、シリコン(Si)、ハフニウム(Hf)、タングステン(W)、及び、ルテニウム(Ru)から成る群から選ばれる少なくとも一つの第1の元素を含む酸化アルミニウムを含み、酸化アルミニウムは強誘電体である第1の層と、を備える。
第2の実施形態の記憶装置は、絶縁層と導電層とが第1の方向に交互に積層された積層体と、積層体の中に設けられ、第1の方向に延びる半導体層と、導電層と半導体層との間に設けられ、マグネシウム(Mg)、シリコン(Si)、ハフニウム(Hf)、タングステン(W)、及び、ルテニウム(Ru)から成る群から選ばれる少なくとも一つの第1の元素を含む酸化アルミニウムを含み、酸化アルミニウムは強誘電体である第1の層と、を備える。
第3の実施形態の記憶装置は、強誘電体層を誘電体層とするキャパシタと、メモリセル選択用のトランジスタとを組み合わせた1トランジスタ1キャパシタ型(1T1C型)の記憶装置である点で、第1の実施形態の記憶装置と異なっている。例えば、強誘電体層については第1の実施形態と同様である。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態の記憶装置は、強誘電体を利用したFTJ(ferroelectric tunnel junction)構造を用いたFTJメモリである点で、第1の実施形態の記憶装置と異なっている。例えば、強誘電体層については第1の実施形態と同様である。以下、第1の実施形態と重複する内容については、一部記述を省略する。
11 層間絶縁層(絶縁層)
16 ゲート電極(第2の導電層)
18 強誘電体層(第1の層)
20 界面層(第2の層)
40 下部キャパシタ電極(第1の導電層)
42 上部キャパシタ電極(第2の導電層)
50 積層体
52 下部電極(第1の導電層)
54 上部電極(第2の導電層)
WL ワード線(導電層)
Claims (14)
- 第1の導電層と、
第2の導電層と、
前記第1の導電層と前記第2の導電層との間に設けられ、マグネシウム(Mg)、シリコン(Si)、ハフニウム(Hf)、タングステン(W)、及び、ルテニウム(Ru)から成る群から選ばれる少なくとも一つの第1の元素を含む酸化アルミニウムを含み、前記酸化アルミニウムは強誘電体である第1の層と、
を備える記憶装置。 - 前記酸化アルミニウムはκ(カッパ)−酸化アルミニウムである請求項1記載の記憶装置。
- 第1の導電層と、
第2の導電層と、
前記第1の導電層と前記第2の導電層との間に設けられ、マグネシウム(Mg)、シリコン(Si)、ハフニウム(Hf)、タングステン(W)、及び、ルテニウム(Ru)から成る群から選ばれる少なくとも一つの第1の元素を含む酸化アルミニウムを含み、前記酸化アルミニウムはκ(カッパ)−酸化アルミニウムである第1の層と、
を備える記憶装置。 - 前記第1の層の中の前記酸化アルミニウムのc軸の方向が、前記第1の導電層と前記第2の導電層とを結ぶ方向に対し、±10度の範囲に入る請求項1ないし請求項3いずれか一項記載の記憶装置。
- 前記第1の導電層と前記第1の層との間に、酸化物又は酸窒化物を含む第2の層を、更に備える請求項1ないし請求項4いずれか一項記載の記憶装置。
- 複数の導電層が第1の方向に配列された積層体と、
前記積層体の中に設けられ、前記第1の方向に延びる半導体層と、
前記導電層と前記半導体層との間に設けられ、マグネシウム(Mg)、シリコン(Si)、ハフニウム(Hf)、タングステン(W)、及び、ルテニウム(Ru)から成る群から選ばれる少なくとも一つの第1の元素を含む酸化アルミニウムを含み、前記酸化アルミニウムは強誘電体である第1の層と、
を備える記憶装置。 - 前記酸化アルミニウムはκ(カッパ)−酸化アルミニウムである請求項6記載の記憶装置。
- 複数の導電層が第1の方向に配列された積層体と、
前記積層体の中に設けられ、前記第1の方向に延びる半導体層と、
前記導電層と前記半導体層との間に設けられ、マグネシウム(Mg)、シリコン(Si)、ハフニウム(Hf)、タングステン(W)、及び、ルテニウム(Ru)から成る群から選ばれる少なくとも一つの第1の元素を含む酸化アルミニウムを含み、前記酸化アルミニウムはκ(カッパ)−酸化アルミニウムである第1の層と、
を備える記憶装置。 - 前記第1の層の中の前記酸化アルミニウムのc軸の方向が、前記導電層と前記半導体層とを結ぶ方向に対し、±10度の範囲に入る請求項6ないし請求項8いずれか一項記載の記憶装置。
- 前記半導体層と前記第1の層との間に、酸化物又は酸窒化物を含む第2の層を、更に備える請求項6ないし請求項9いずれか一項記載の記憶装置。
- 前記酸化アルミニウムのa軸長及びb軸長は、標準軸長の99.5%以下である請求項1ないし請求項10いずれか一項記載の請求項15記載の記憶装置。
- 前記酸化アルミニウムは、マンガン(Mn)、クロム(Cr)、バナジウム(V)、及び、コバルト(Co)から成る群から選ばれる少なくとも一つの第2の元素を含む請求項1ないし請求項11いずれか一項記載の記憶装置。
- 前記酸化アルミニウムは、イオウ(S)、塩素(Cl)、炭素(C)、及び、窒素(N)から成る群から選ばれる少なくとも一つの第3の元素を含む請求項1ないし請求項12いずれか一項記載の記憶装置。
- 前記第1の層の厚さは1nm以上15nm以下である請求項1ないし請求項13いずれか一項記載の記憶装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2018175448A JP7066585B2 (ja) | 2018-09-19 | 2018-09-19 | 記憶装置 |
CN201910142958.7A CN110931560B (zh) | 2018-09-19 | 2019-02-26 | 存储装置 |
TW108106684A TWI686932B (zh) | 2018-09-19 | 2019-02-27 | 記憶裝置 |
US16/360,932 US10923500B2 (en) | 2018-09-19 | 2019-03-21 | Memory device |
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JP2018175448A JP7066585B2 (ja) | 2018-09-19 | 2018-09-19 | 記憶装置 |
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JP2020047796A true JP2020047796A (ja) | 2020-03-26 |
JP7066585B2 JP7066585B2 (ja) | 2022-05-13 |
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US (1) | US10923500B2 (ja) |
JP (1) | JP7066585B2 (ja) |
CN (1) | CN110931560B (ja) |
TW (1) | TWI686932B (ja) |
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