DE112020006949T5 - Bias-Schaltung, Sensorvorrichtung und drahtlose Sensorvorrichtung - Google Patents

Bias-Schaltung, Sensorvorrichtung und drahtlose Sensorvorrichtung Download PDF

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Publication number
DE112020006949T5
DE112020006949T5 DE112020006949.4T DE112020006949T DE112020006949T5 DE 112020006949 T5 DE112020006949 T5 DE 112020006949T5 DE 112020006949 T DE112020006949 T DE 112020006949T DE 112020006949 T5 DE112020006949 T5 DE 112020006949T5
Authority
DE
Germany
Prior art keywords
node
circuit
voltage
bias circuit
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020006949.4T
Other languages
German (de)
English (en)
Inventor
Tomokazu Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112020006949T5 publication Critical patent/DE112020006949T5/de
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0084—Measuring voltage only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
DE112020006949.4T 2020-03-24 2020-03-24 Bias-Schaltung, Sensorvorrichtung und drahtlose Sensorvorrichtung Pending DE112020006949T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/013038 WO2021192040A1 (ja) 2020-03-24 2020-03-24 バイアス回路、並びに、センサ機器及びワイヤレスセンサ機器

Publications (1)

Publication Number Publication Date
DE112020006949T5 true DE112020006949T5 (de) 2023-01-26

Family

ID=77891247

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020006949.4T Pending DE112020006949T5 (de) 2020-03-24 2020-03-24 Bias-Schaltung, Sensorvorrichtung und drahtlose Sensorvorrichtung

Country Status (5)

Country Link
US (1) US11967949B2 (https=)
JP (1) JP7650860B2 (https=)
CN (1) CN115298634B (https=)
DE (1) DE112020006949T5 (https=)
WO (1) WO2021192040A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114661649B (zh) * 2022-04-12 2024-12-06 湖南国科微电子股份有限公司 一种偏置电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011186987A (ja) 2010-03-11 2011-09-22 Renesas Electronics Corp 基準電流生成回路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002328732A (ja) * 2001-05-07 2002-11-15 Texas Instr Japan Ltd 基準電圧発生回路
JP4374254B2 (ja) * 2004-01-27 2009-12-02 Ｏｋｉセミコンダクタ株式会社 バイアス電圧発生回路
EP1812842A2 (en) 2004-11-11 2007-08-01 Koninklijke Philips Electronics N.V. All npn-transistor ptat current source
JP2008197994A (ja) * 2007-02-14 2008-08-28 Oki Electric Ind Co Ltd 起動回路
TW200903213A (en) * 2007-07-02 2009-01-16 Beyond Innovation Tech Co Ltd Bias supply, start-up circuit, and start-up method for bias circuit
JP2009093483A (ja) * 2007-10-10 2009-04-30 Kobe Univ 温度補償バイアス回路
JP5202980B2 (ja) * 2008-02-13 2013-06-05 セイコーインスツル株式会社 定電流回路
JP5219876B2 (ja) * 2009-02-13 2013-06-26 新日本無線株式会社 バイアス電流発生回路
US8669808B2 (en) * 2009-09-14 2014-03-11 Mediatek Inc. Bias circuit and phase-locked loop circuit using the same
US8400219B2 (en) * 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
JP2012252508A (ja) * 2011-06-02 2012-12-20 Lapis Semiconductor Co Ltd 半導体集積回路
JP5762205B2 (ja) * 2011-08-04 2015-08-12 ラピスセミコンダクタ株式会社 半導体集積回路
CN104898760B (zh) * 2015-04-30 2016-08-17 中国电子科技集团公司第三十八研究所 适用于低电压环境的电流镜电路
JP6782614B2 (ja) * 2016-11-21 2020-11-11 ラピスセミコンダクタ株式会社 出力回路及び液晶表示装置のデータドライバ
US10033364B1 (en) * 2017-05-31 2018-07-24 Silicon Laboratories Inc. Low power compact peak detector with improved accuracy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011186987A (ja) 2010-03-11 2011-09-22 Renesas Electronics Corp 基準電流生成回路

Also Published As

Publication number Publication date
CN115298634B (zh) 2023-10-31
JPWO2021192040A1 (https=) 2021-09-30
WO2021192040A1 (ja) 2021-09-30
US11967949B2 (en) 2024-04-23
US20230068062A1 (en) 2023-03-02
JP7650860B2 (ja) 2025-03-25
CN115298634A (zh) 2022-11-04

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