JPWO2021192040A1 - - Google Patents

Info

Publication number
JPWO2021192040A1
JPWO2021192040A1 JP2022509835A JP2022509835A JPWO2021192040A1 JP WO2021192040 A1 JPWO2021192040 A1 JP WO2021192040A1 JP 2022509835 A JP2022509835 A JP 2022509835A JP 2022509835 A JP2022509835 A JP 2022509835A JP WO2021192040 A1 JPWO2021192040 A1 JP WO2021192040A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022509835A
Other languages
Japanese (ja)
Other versions
JPWO2021192040A5 (https=
JP7650860B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021192040A1 publication Critical patent/JPWO2021192040A1/ja
Publication of JPWO2021192040A5 publication Critical patent/JPWO2021192040A5/ja
Application granted granted Critical
Publication of JP7650860B2 publication Critical patent/JP7650860B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0084—Measuring voltage only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
JP2022509835A 2020-03-24 2020-03-24 バイアス回路、並びに、センサ機器及びワイヤレスセンサ機器 Active JP7650860B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/013038 WO2021192040A1 (ja) 2020-03-24 2020-03-24 バイアス回路、並びに、センサ機器及びワイヤレスセンサ機器

Publications (3)

Publication Number Publication Date
JPWO2021192040A1 true JPWO2021192040A1 (https=) 2021-09-30
JPWO2021192040A5 JPWO2021192040A5 (https=) 2022-10-14
JP7650860B2 JP7650860B2 (ja) 2025-03-25

Family

ID=77891247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022509835A Active JP7650860B2 (ja) 2020-03-24 2020-03-24 バイアス回路、並びに、センサ機器及びワイヤレスセンサ機器

Country Status (5)

Country Link
US (1) US11967949B2 (https=)
JP (1) JP7650860B2 (https=)
CN (1) CN115298634B (https=)
DE (1) DE112020006949T5 (https=)
WO (1) WO2021192040A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114661649B (zh) * 2022-04-12 2024-12-06 湖南国科微电子股份有限公司 一种偏置电路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002328732A (ja) * 2001-05-07 2002-11-15 Texas Instr Japan Ltd 基準電圧発生回路
JP2008197994A (ja) * 2007-02-14 2008-08-28 Oki Electric Ind Co Ltd 起動回路
JP2009093483A (ja) * 2007-10-10 2009-04-30 Kobe Univ 温度補償バイアス回路
JP2009193211A (ja) * 2008-02-13 2009-08-27 Seiko Instruments Inc 定電流回路
JP2010186360A (ja) * 2009-02-13 2010-08-26 New Japan Radio Co Ltd バイアス電流発生回路
JP2011186987A (ja) * 2010-03-11 2011-09-22 Renesas Electronics Corp 基準電流生成回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4374254B2 (ja) * 2004-01-27 2009-12-02 Ｏｋｉセミコンダクタ株式会社 バイアス電圧発生回路
EP1812842A2 (en) 2004-11-11 2007-08-01 Koninklijke Philips Electronics N.V. All npn-transistor ptat current source
TW200903213A (en) * 2007-07-02 2009-01-16 Beyond Innovation Tech Co Ltd Bias supply, start-up circuit, and start-up method for bias circuit
US8669808B2 (en) * 2009-09-14 2014-03-11 Mediatek Inc. Bias circuit and phase-locked loop circuit using the same
US8400219B2 (en) * 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
JP2012252508A (ja) * 2011-06-02 2012-12-20 Lapis Semiconductor Co Ltd 半導体集積回路
JP5762205B2 (ja) * 2011-08-04 2015-08-12 ラピスセミコンダクタ株式会社 半導体集積回路
CN104898760B (zh) * 2015-04-30 2016-08-17 中国电子科技集团公司第三十八研究所 适用于低电压环境的电流镜电路
JP6782614B2 (ja) * 2016-11-21 2020-11-11 ラピスセミコンダクタ株式会社 出力回路及び液晶表示装置のデータドライバ
US10033364B1 (en) * 2017-05-31 2018-07-24 Silicon Laboratories Inc. Low power compact peak detector with improved accuracy

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002328732A (ja) * 2001-05-07 2002-11-15 Texas Instr Japan Ltd 基準電圧発生回路
JP2008197994A (ja) * 2007-02-14 2008-08-28 Oki Electric Ind Co Ltd 起動回路
JP2009093483A (ja) * 2007-10-10 2009-04-30 Kobe Univ 温度補償バイアス回路
JP2009193211A (ja) * 2008-02-13 2009-08-27 Seiko Instruments Inc 定電流回路
JP2010186360A (ja) * 2009-02-13 2010-08-26 New Japan Radio Co Ltd バイアス電流発生回路
JP2011186987A (ja) * 2010-03-11 2011-09-22 Renesas Electronics Corp 基準電流生成回路

Also Published As

Publication number Publication date
CN115298634B (zh) 2023-10-31
WO2021192040A1 (ja) 2021-09-30
US11967949B2 (en) 2024-04-23
US20230068062A1 (en) 2023-03-02
JP7650860B2 (ja) 2025-03-25
CN115298634A (zh) 2022-11-04
DE112020006949T5 (de) 2023-01-26

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