DE112018005614B4 - Verfahren zum Bilden einer Halbleitereinheit - Google Patents

Verfahren zum Bilden einer Halbleitereinheit Download PDF

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Publication number
DE112018005614B4
DE112018005614B4 DE112018005614.7T DE112018005614T DE112018005614B4 DE 112018005614 B4 DE112018005614 B4 DE 112018005614B4 DE 112018005614 T DE112018005614 T DE 112018005614T DE 112018005614 B4 DE112018005614 B4 DE 112018005614B4
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layer
fet
hbfet
gate electrode
semiconductor
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DE112018005614T5 (de
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Yulong Li
Paul Michael Solomon
Siyuranga KOSWATTA
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
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    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
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    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
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    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0318—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] of vertical TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
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    • H10D30/63—Vertical IGFETs
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
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    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
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    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
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    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
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    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
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    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
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    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
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    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
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    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
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    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112018005614.7T 2017-12-21 2018-12-19 Verfahren zum Bilden einer Halbleitereinheit Active DE112018005614B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/850,098 2017-12-21
US15/850,098 US10374041B2 (en) 2017-12-21 2017-12-21 Field effect transistor with controllable resistance
PCT/IB2018/060321 WO2019123303A1 (en) 2017-12-21 2018-12-19 Field effect transistor with controllable resistance

Publications (2)

Publication Number Publication Date
DE112018005614T5 DE112018005614T5 (de) 2020-07-02
DE112018005614B4 true DE112018005614B4 (de) 2023-01-19

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DE112018005614.7T Active DE112018005614B4 (de) 2017-12-21 2018-12-19 Verfahren zum Bilden einer Halbleitereinheit

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Country Link
US (5) US10374041B2 (enExample)
JP (1) JP7355393B2 (enExample)
CN (1) CN111512438B (enExample)
DE (1) DE112018005614B4 (enExample)
GB (1) GB2583299B (enExample)
WO (1) WO2019123303A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10615176B2 (en) * 2017-11-22 2020-04-07 International Business Machine Corporation Ferro-electric complementary FET
US10374041B2 (en) 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance
US10453861B1 (en) * 2018-03-28 2019-10-22 Sandisk Technologies Llc Ferroelectric non-volatile memory
US10489483B1 (en) * 2018-09-21 2019-11-26 National Technology & Engineering Solutions Of Sandia, Llc Circuit arrangement and technique for setting matrix values in three-terminal memory cells
US20210034953A1 (en) * 2019-08-02 2021-02-04 Applied Materials, Inc. Reconfigurable finfet-based artificial neuron and synapse devices
US11018256B2 (en) * 2019-08-23 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Selective internal gate structure for ferroelectric semiconductor devices
US11239368B2 (en) 2019-08-30 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11139315B2 (en) * 2019-10-31 2021-10-05 Qualcomm Incorporated Ferroelectric transistor
NL2024351B1 (en) * 2019-12-02 2021-08-31 Stichting Katholieke Univ Device comprising an Adaptable and Addressable Neuromorphic Structure
US11309398B2 (en) * 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11171157B1 (en) 2020-05-05 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a MFMIS memory device
US11322519B2 (en) * 2020-05-28 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
DE102021101243A1 (de) 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherblock-kanalregionen
DE102020207439A1 (de) * 2020-06-16 2021-12-16 Forschungszentrum Jülich GmbH Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren
US11640974B2 (en) 2020-06-30 2023-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array isolation structures
US11647634B2 (en) 2020-07-16 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11355516B2 (en) 2020-07-16 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11501812B2 (en) * 2020-07-31 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including ferroelectric memory and methods of forming the same
US11978798B2 (en) * 2020-11-04 2024-05-07 Samsung Electronics Co., Ltd. Semiconductor device
WO2022131787A1 (ko) * 2020-12-18 2022-06-23 한국과학기술원 빛에 반응하는 뉴런 소자를 구현하는 트랜지스터
WO2022181999A1 (ko) * 2021-02-23 2022-09-01 한국과학기술원 우수한 선형성 특성을 갖는 뉴로모픽 시냅스 소자 및 그 동작 방법
US11557609B2 (en) * 2021-03-04 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and method of forming the same
US11769815B2 (en) * 2021-03-05 2023-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device
KR102956012B1 (ko) * 2021-06-04 2026-04-21 삼성전자주식회사 박막 구조체, 이를 포함하는 반도체 소자 및 반도체 소자를 포함하는 반도체 장치
US12216026B2 (en) * 2021-06-29 2025-02-04 Khalifa University of Science and Technology Low power memristive vacuum sensor
KR102932198B1 (ko) 2021-07-01 2026-02-26 삼성전자주식회사 반도체 장치 및 반도체 장치 제조 방법
WO2023277817A2 (en) * 2021-07-02 2023-01-05 National University Of Singapore Heterostructures and electronic devices comprising heterostructures
US11810982B2 (en) * 2021-08-02 2023-11-07 Globalfoundries Singapore Pte. Ltd. Nonvolatile memory device with a doped region between a source and a drain and integration schemes
US11929404B2 (en) 2021-09-01 2024-03-12 International Business Machines Corporation Transistor gates having embedded metal-insulator-metal capacitors
KR20230043634A (ko) * 2021-09-24 2023-03-31 에스케이하이닉스 주식회사 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치
CN115881804B (zh) * 2021-09-27 2025-07-04 中国科学院物理研究所 一种模拟生物信号的半导体器件
US12254915B1 (en) 2023-08-31 2025-03-18 Macronix International Co., Ltd. Integrated circuit structure and method for forming and operating the same
TWI872673B (zh) * 2023-08-31 2025-02-11 旺宏電子股份有限公司 積體電路結構及其形成與操作方法
US20250086443A1 (en) 2023-09-11 2025-03-13 Macronix International Co., Ltd. Universal memories for in-memory computing
US20250386583A1 (en) * 2024-06-17 2025-12-18 Intel Corporation Transistor arrangements with programmable gates for threshold voltage tuning

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171216A (ja) 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350953A (en) 1993-05-28 1994-09-27 Swenson Richard M Digitally weighted neuron for artificial neural network
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US6242771B1 (en) 1998-01-02 2001-06-05 Sharp Laboratories Of America, Inc. Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications
JP3539491B2 (ja) * 2001-02-26 2004-07-07 シャープ株式会社 半導体装置の製造方法
JP2004235230A (ja) 2003-01-28 2004-08-19 Fujitsu Ltd 短チャネル効果を抑制したｍｉｓ型電解効果トランジスタ
US20040256692A1 (en) * 2003-06-19 2004-12-23 Keith Edmund Kunz Composite analog power transistor and method for making the same
US7067381B1 (en) * 2003-08-06 2006-06-27 Advanced Micro Devices, Inc. Structure and method to reduce drain induced barrier lowering
JP2006344804A (ja) * 2005-06-09 2006-12-21 Seiko Epson Corp 半導体装置および半導体装置の製造方法
DE102005053718B8 (de) * 2005-11-10 2014-04-30 Infineon Technologies Ag Floating-Gate-Speicherzelle und Verfahren zum Herstellen einer Floating-Gate-Speicherzelle
KR101474028B1 (ko) 2006-04-04 2014-12-17 마이크론 테크놀로지, 인크. 에칭된 나노핀 트랜지스터
EP2230633A1 (en) 2009-03-17 2010-09-22 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Neural network circuit comprising nanoscale synapses and CMOS neurons
CN102044289B (zh) * 2009-10-20 2012-12-05 中芯国际集成电路制造(上海)有限公司 绿色晶体管、纳米硅铁电存储器及其驱动方法
US9496268B2 (en) * 2009-12-02 2016-11-15 Altera Corporation Integrated circuits with asymmetric and stacked transistors
CN103094338B (zh) * 2011-11-01 2015-09-09 中国科学院微电子研究所 半导体器件及其制造方法
JP6501146B2 (ja) * 2014-03-18 2019-04-17 パナソニックＩｐマネジメント株式会社 ニューラルネットワーク回路およびその学習方法
US20150278682A1 (en) 2014-04-01 2015-10-01 Boise State University Memory controlled circuit system and apparatus
US10062426B2 (en) * 2014-04-24 2018-08-28 Micron Technology, Inc. Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
US9760533B2 (en) 2014-08-14 2017-09-12 The Regents On The University Of Michigan Floating-gate transistor array for performing weighted sum computation
US9356074B1 (en) * 2014-11-17 2016-05-31 Sandisk Technologies Inc. Memory array having divided apart bit lines and partially divided bit line selector switches
US10396175B2 (en) * 2014-11-25 2019-08-27 University Of Kentucky Research Foundation Nanogaps on atomically thin materials as non-volatile read/writable memory devices
US9601617B2 (en) 2015-01-23 2017-03-21 Qualcomm Incorporated Fabrication of a transistor including a tunneling layer
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6641588B2 (ja) 2015-09-18 2020-02-05 セメダイン株式会社 接着方法
US9712146B2 (en) 2015-09-18 2017-07-18 University Of Notre Dame Du Lac Mixed signal processors
CN106558609B (zh) * 2015-09-24 2020-01-10 中国科学院微电子研究所 隧穿场效应晶体管及其制造方法
CN108140581B (zh) * 2015-09-30 2021-09-07 国立研究开发法人科学技术振兴机构 隧道场效应晶体管
KR101740986B1 (ko) * 2016-01-29 2017-05-29 서울시립대학교 산학협력단 Ler에 따른 임의 변화를 최소화하는 디자인 파라미터 결정 장치 및 결정 방법
US9659249B1 (en) 2016-09-27 2017-05-23 International Business Machines Corporation Pre-programmed resistive cross-point array for neural network
US9799777B1 (en) * 2016-10-07 2017-10-24 International Business Machines Corporation Floating gate memory in a channel last vertical FET flow
US9852790B1 (en) 2016-10-26 2017-12-26 International Business Machines Corporation Circuit methodology for highly linear and symmetric resistive processing unit
US10332874B2 (en) 2017-05-03 2019-06-25 International Business Machines Corporation Indirect readout FET
US10134472B1 (en) 2017-06-30 2018-11-20 International Business Machines Corporation Floating gate architecture for deep neural network application
US10374041B2 (en) 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171216A (ja) 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法

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