CN111512438B - 具有可控电阻的场效应晶体管 - Google Patents

具有可控电阻的场效应晶体管 Download PDF

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CN111512438B
CN111512438B CN201880082340.XA CN201880082340A CN111512438B CN 111512438 B CN111512438 B CN 111512438B CN 201880082340 A CN201880082340 A CN 201880082340A CN 111512438 B CN111512438 B CN 111512438B
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energy barrier
layer
semiconductor
gate
semiconductor device
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CN111512438A (zh
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李宇龙
P·M·所罗门
S·科斯瓦特
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International Business Machines Corp
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    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201880082340.XA 2017-12-21 2018-12-19 具有可控电阻的场效应晶体管 Active CN111512438B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/850,098 2017-12-21
US15/850,098 US10374041B2 (en) 2017-12-21 2017-12-21 Field effect transistor with controllable resistance
PCT/IB2018/060321 WO2019123303A1 (en) 2017-12-21 2018-12-19 Field effect transistor with controllable resistance

Publications (2)

Publication Number Publication Date
CN111512438A CN111512438A (zh) 2020-08-07
CN111512438B true CN111512438B (zh) 2023-11-07

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US (5) US10374041B2 (enExample)
JP (1) JP7355393B2 (enExample)
CN (1) CN111512438B (enExample)
DE (1) DE112018005614B4 (enExample)
GB (1) GB2583299B (enExample)
WO (1) WO2019123303A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10615176B2 (en) * 2017-11-22 2020-04-07 International Business Machine Corporation Ferro-electric complementary FET
US10374041B2 (en) 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance
US10453861B1 (en) * 2018-03-28 2019-10-22 Sandisk Technologies Llc Ferroelectric non-volatile memory
US10489483B1 (en) * 2018-09-21 2019-11-26 National Technology & Engineering Solutions Of Sandia, Llc Circuit arrangement and technique for setting matrix values in three-terminal memory cells
US20210034953A1 (en) * 2019-08-02 2021-02-04 Applied Materials, Inc. Reconfigurable finfet-based artificial neuron and synapse devices
US11018256B2 (en) * 2019-08-23 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Selective internal gate structure for ferroelectric semiconductor devices
US11239368B2 (en) 2019-08-30 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11139315B2 (en) * 2019-10-31 2021-10-05 Qualcomm Incorporated Ferroelectric transistor
NL2024351B1 (en) * 2019-12-02 2021-08-31 Stichting Katholieke Univ Device comprising an Adaptable and Addressable Neuromorphic Structure
US11309398B2 (en) * 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11171157B1 (en) 2020-05-05 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a MFMIS memory device
US11322519B2 (en) * 2020-05-28 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
DE102021101243A1 (de) 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherblock-kanalregionen
DE102020207439A1 (de) * 2020-06-16 2021-12-16 Forschungszentrum Jülich GmbH Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren
US11640974B2 (en) 2020-06-30 2023-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array isolation structures
US11647634B2 (en) 2020-07-16 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11355516B2 (en) 2020-07-16 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11501812B2 (en) * 2020-07-31 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including ferroelectric memory and methods of forming the same
US11978798B2 (en) * 2020-11-04 2024-05-07 Samsung Electronics Co., Ltd. Semiconductor device
WO2022131787A1 (ko) * 2020-12-18 2022-06-23 한국과학기술원 빛에 반응하는 뉴런 소자를 구현하는 트랜지스터
WO2022181999A1 (ko) * 2021-02-23 2022-09-01 한국과학기술원 우수한 선형성 특성을 갖는 뉴로모픽 시냅스 소자 및 그 동작 방법
US11557609B2 (en) * 2021-03-04 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and method of forming the same
US11769815B2 (en) * 2021-03-05 2023-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device
KR102956012B1 (ko) * 2021-06-04 2026-04-21 삼성전자주식회사 박막 구조체, 이를 포함하는 반도체 소자 및 반도체 소자를 포함하는 반도체 장치
US12216026B2 (en) * 2021-06-29 2025-02-04 Khalifa University of Science and Technology Low power memristive vacuum sensor
KR102932198B1 (ko) 2021-07-01 2026-02-26 삼성전자주식회사 반도체 장치 및 반도체 장치 제조 방법
WO2023277817A2 (en) * 2021-07-02 2023-01-05 National University Of Singapore Heterostructures and electronic devices comprising heterostructures
US11810982B2 (en) * 2021-08-02 2023-11-07 Globalfoundries Singapore Pte. Ltd. Nonvolatile memory device with a doped region between a source and a drain and integration schemes
US11929404B2 (en) 2021-09-01 2024-03-12 International Business Machines Corporation Transistor gates having embedded metal-insulator-metal capacitors
KR20230043634A (ko) * 2021-09-24 2023-03-31 에스케이하이닉스 주식회사 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치
CN115881804B (zh) * 2021-09-27 2025-07-04 中国科学院物理研究所 一种模拟生物信号的半导体器件
US12254915B1 (en) 2023-08-31 2025-03-18 Macronix International Co., Ltd. Integrated circuit structure and method for forming and operating the same
TWI872673B (zh) * 2023-08-31 2025-02-11 旺宏電子股份有限公司 積體電路結構及其形成與操作方法
US20250086443A1 (en) 2023-09-11 2025-03-13 Macronix International Co., Ltd. Universal memories for in-memory computing
US20250386583A1 (en) * 2024-06-17 2025-12-18 Intel Corporation Transistor arrangements with programmable gates for threshold voltage tuning

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094338A (zh) * 2011-11-01 2013-05-08 中国科学院微电子研究所 半导体器件及其制造方法
JP2016171216A (ja) * 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法
CN106098771A (zh) * 2015-04-29 2016-11-09 意法半导体公司 具有半导体鳍结构的隧穿场效应晶体管
CN106558609A (zh) * 2015-09-24 2017-04-05 中国科学院微电子研究所 隧穿场效应晶体管及其制造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350953A (en) 1993-05-28 1994-09-27 Swenson Richard M Digitally weighted neuron for artificial neural network
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US6242771B1 (en) 1998-01-02 2001-06-05 Sharp Laboratories Of America, Inc. Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications
JP3539491B2 (ja) * 2001-02-26 2004-07-07 シャープ株式会社 半導体装置の製造方法
JP2004235230A (ja) 2003-01-28 2004-08-19 Fujitsu Ltd 短チャネル効果を抑制したｍｉｓ型電解効果トランジスタ
US20040256692A1 (en) * 2003-06-19 2004-12-23 Keith Edmund Kunz Composite analog power transistor and method for making the same
US7067381B1 (en) * 2003-08-06 2006-06-27 Advanced Micro Devices, Inc. Structure and method to reduce drain induced barrier lowering
JP2006344804A (ja) * 2005-06-09 2006-12-21 Seiko Epson Corp 半導体装置および半導体装置の製造方法
DE102005053718B8 (de) * 2005-11-10 2014-04-30 Infineon Technologies Ag Floating-Gate-Speicherzelle und Verfahren zum Herstellen einer Floating-Gate-Speicherzelle
KR101474028B1 (ko) 2006-04-04 2014-12-17 마이크론 테크놀로지, 인크. 에칭된 나노핀 트랜지스터
EP2230633A1 (en) 2009-03-17 2010-09-22 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Neural network circuit comprising nanoscale synapses and CMOS neurons
CN102044289B (zh) * 2009-10-20 2012-12-05 中芯国际集成电路制造(上海)有限公司 绿色晶体管、纳米硅铁电存储器及其驱动方法
US9496268B2 (en) * 2009-12-02 2016-11-15 Altera Corporation Integrated circuits with asymmetric and stacked transistors
JP6501146B2 (ja) * 2014-03-18 2019-04-17 パナソニックＩｐマネジメント株式会社 ニューラルネットワーク回路およびその学習方法
US20150278682A1 (en) 2014-04-01 2015-10-01 Boise State University Memory controlled circuit system and apparatus
US10062426B2 (en) * 2014-04-24 2018-08-28 Micron Technology, Inc. Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
US9760533B2 (en) 2014-08-14 2017-09-12 The Regents On The University Of Michigan Floating-gate transistor array for performing weighted sum computation
US9356074B1 (en) * 2014-11-17 2016-05-31 Sandisk Technologies Inc. Memory array having divided apart bit lines and partially divided bit line selector switches
US10396175B2 (en) * 2014-11-25 2019-08-27 University Of Kentucky Research Foundation Nanogaps on atomically thin materials as non-volatile read/writable memory devices
US9601617B2 (en) 2015-01-23 2017-03-21 Qualcomm Incorporated Fabrication of a transistor including a tunneling layer
JP6641588B2 (ja) 2015-09-18 2020-02-05 セメダイン株式会社 接着方法
US9712146B2 (en) 2015-09-18 2017-07-18 University Of Notre Dame Du Lac Mixed signal processors
CN108140581B (zh) * 2015-09-30 2021-09-07 国立研究开发法人科学技术振兴机构 隧道场效应晶体管
KR101740986B1 (ko) * 2016-01-29 2017-05-29 서울시립대학교 산학협력단 Ler에 따른 임의 변화를 최소화하는 디자인 파라미터 결정 장치 및 결정 방법
US9659249B1 (en) 2016-09-27 2017-05-23 International Business Machines Corporation Pre-programmed resistive cross-point array for neural network
US9799777B1 (en) * 2016-10-07 2017-10-24 International Business Machines Corporation Floating gate memory in a channel last vertical FET flow
US9852790B1 (en) 2016-10-26 2017-12-26 International Business Machines Corporation Circuit methodology for highly linear and symmetric resistive processing unit
US10332874B2 (en) 2017-05-03 2019-06-25 International Business Machines Corporation Indirect readout FET
US10134472B1 (en) 2017-06-30 2018-11-20 International Business Machines Corporation Floating gate architecture for deep neural network application
US10374041B2 (en) 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094338A (zh) * 2011-11-01 2013-05-08 中国科学院微电子研究所 半导体器件及其制造方法
JP2016171216A (ja) * 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法
CN106098771A (zh) * 2015-04-29 2016-11-09 意法半导体公司 具有半导体鳍结构的隧穿场效应晶体管
CN106558609A (zh) * 2015-09-24 2017-04-05 中国科学院微电子研究所 隧穿场效应晶体管及其制造方法

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