JP7355393B2 - 半導体デバイスを形成する方法および半導体デバイス - Google Patents

半導体デバイスを形成する方法および半導体デバイス Download PDF

Info

Publication number
JP7355393B2
JP7355393B2 JP2020532918A JP2020532918A JP7355393B2 JP 7355393 B2 JP7355393 B2 JP 7355393B2 JP 2020532918 A JP2020532918 A JP 2020532918A JP 2020532918 A JP2020532918 A JP 2020532918A JP 7355393 B2 JP7355393 B2 JP 7355393B2
Authority
JP
Japan
Prior art keywords
energy barrier
forming
layer
semiconductor
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020532918A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021507519A5 (enExample
JP2021507519A (ja
Inventor
リ、ユーロン
ソロモン、ポール、マイケル
コスワッタ、シユランガ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2021507519A publication Critical patent/JP2021507519A/ja
Publication of JP2021507519A5 publication Critical patent/JP2021507519A5/ja
Application granted granted Critical
Publication of JP7355393B2 publication Critical patent/JP7355393B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0318—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] of vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020532918A 2017-12-21 2018-12-19 半導体デバイスを形成する方法および半導体デバイス Active JP7355393B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/850,098 2017-12-21
US15/850,098 US10374041B2 (en) 2017-12-21 2017-12-21 Field effect transistor with controllable resistance
PCT/IB2018/060321 WO2019123303A1 (en) 2017-12-21 2018-12-19 Field effect transistor with controllable resistance

Publications (3)

Publication Number Publication Date
JP2021507519A JP2021507519A (ja) 2021-02-22
JP2021507519A5 JP2021507519A5 (enExample) 2021-04-01
JP7355393B2 true JP7355393B2 (ja) 2023-10-03

Family

ID=66949653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020532918A Active JP7355393B2 (ja) 2017-12-21 2018-12-19 半導体デバイスを形成する方法および半導体デバイス

Country Status (6)

Country Link
US (5) US10374041B2 (enExample)
JP (1) JP7355393B2 (enExample)
CN (1) CN111512438B (enExample)
DE (1) DE112018005614B4 (enExample)
GB (1) GB2583299B (enExample)
WO (1) WO2019123303A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10615176B2 (en) * 2017-11-22 2020-04-07 International Business Machine Corporation Ferro-electric complementary FET
US10374041B2 (en) 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance
US10453861B1 (en) * 2018-03-28 2019-10-22 Sandisk Technologies Llc Ferroelectric non-volatile memory
US10489483B1 (en) * 2018-09-21 2019-11-26 National Technology & Engineering Solutions Of Sandia, Llc Circuit arrangement and technique for setting matrix values in three-terminal memory cells
US20210034953A1 (en) * 2019-08-02 2021-02-04 Applied Materials, Inc. Reconfigurable finfet-based artificial neuron and synapse devices
US11018256B2 (en) * 2019-08-23 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Selective internal gate structure for ferroelectric semiconductor devices
US11239368B2 (en) 2019-08-30 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11139315B2 (en) * 2019-10-31 2021-10-05 Qualcomm Incorporated Ferroelectric transistor
NL2024351B1 (en) * 2019-12-02 2021-08-31 Stichting Katholieke Univ Device comprising an Adaptable and Addressable Neuromorphic Structure
US11309398B2 (en) * 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11171157B1 (en) 2020-05-05 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a MFMIS memory device
US11322519B2 (en) * 2020-05-28 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
DE102021101243A1 (de) 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherblock-kanalregionen
DE102020207439A1 (de) * 2020-06-16 2021-12-16 Forschungszentrum Jülich GmbH Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren
US11640974B2 (en) 2020-06-30 2023-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array isolation structures
US11647634B2 (en) 2020-07-16 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11355516B2 (en) 2020-07-16 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11501812B2 (en) * 2020-07-31 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including ferroelectric memory and methods of forming the same
US11978798B2 (en) * 2020-11-04 2024-05-07 Samsung Electronics Co., Ltd. Semiconductor device
WO2022131787A1 (ko) * 2020-12-18 2022-06-23 한국과학기술원 빛에 반응하는 뉴런 소자를 구현하는 트랜지스터
WO2022181999A1 (ko) * 2021-02-23 2022-09-01 한국과학기술원 우수한 선형성 특성을 갖는 뉴로모픽 시냅스 소자 및 그 동작 방법
US11557609B2 (en) * 2021-03-04 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and method of forming the same
US11769815B2 (en) * 2021-03-05 2023-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device
KR102956012B1 (ko) * 2021-06-04 2026-04-21 삼성전자주식회사 박막 구조체, 이를 포함하는 반도체 소자 및 반도체 소자를 포함하는 반도체 장치
US12216026B2 (en) * 2021-06-29 2025-02-04 Khalifa University of Science and Technology Low power memristive vacuum sensor
KR102932198B1 (ko) 2021-07-01 2026-02-26 삼성전자주식회사 반도체 장치 및 반도체 장치 제조 방법
WO2023277817A2 (en) * 2021-07-02 2023-01-05 National University Of Singapore Heterostructures and electronic devices comprising heterostructures
US11810982B2 (en) * 2021-08-02 2023-11-07 Globalfoundries Singapore Pte. Ltd. Nonvolatile memory device with a doped region between a source and a drain and integration schemes
US11929404B2 (en) 2021-09-01 2024-03-12 International Business Machines Corporation Transistor gates having embedded metal-insulator-metal capacitors
KR20230043634A (ko) * 2021-09-24 2023-03-31 에스케이하이닉스 주식회사 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치
CN115881804B (zh) * 2021-09-27 2025-07-04 中国科学院物理研究所 一种模拟生物信号的半导体器件
US12254915B1 (en) 2023-08-31 2025-03-18 Macronix International Co., Ltd. Integrated circuit structure and method for forming and operating the same
TWI872673B (zh) * 2023-08-31 2025-02-11 旺宏電子股份有限公司 積體電路結構及其形成與操作方法
US20250086443A1 (en) 2023-09-11 2025-03-13 Macronix International Co., Ltd. Universal memories for in-memory computing
US20250386583A1 (en) * 2024-06-17 2025-12-18 Intel Corporation Transistor arrangements with programmable gates for threshold voltage tuning

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353790A (ja) 1999-04-13 2000-12-19 Sharp Corp 強誘電体アプリケーションのためのＰｂ５Ｇｅ３Ｏ１１薄膜の化学蒸着法
JP2002252348A (ja) 2001-02-26 2002-09-06 Sharp Corp 半導体装置の製造方法
JP2004235230A (ja) 2003-01-28 2004-08-19 Fujitsu Ltd 短チャネル効果を抑制したｍｉｓ型電解効果トランジスタ
JP2009532905A (ja) 2006-04-04 2009-09-10 マイクロン テクノロジー， インク． ナノＦｉｎトンネリング・トランジスタ
US20150318029A1 (en) 2009-12-02 2015-11-05 Altera Corporation Integrated Circuits with Asymmetric and Stacked Transistors
US20160218211A1 (en) 2015-01-23 2016-07-28 Qualcomm Incorporated Fabrication of a transistor including a tunneling layer
JP2016171216A (ja) 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350953A (en) 1993-05-28 1994-09-27 Swenson Richard M Digitally weighted neuron for artificial neural network
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US20040256692A1 (en) * 2003-06-19 2004-12-23 Keith Edmund Kunz Composite analog power transistor and method for making the same
US7067381B1 (en) * 2003-08-06 2006-06-27 Advanced Micro Devices, Inc. Structure and method to reduce drain induced barrier lowering
JP2006344804A (ja) * 2005-06-09 2006-12-21 Seiko Epson Corp 半導体装置および半導体装置の製造方法
DE102005053718B8 (de) * 2005-11-10 2014-04-30 Infineon Technologies Ag Floating-Gate-Speicherzelle und Verfahren zum Herstellen einer Floating-Gate-Speicherzelle
EP2230633A1 (en) 2009-03-17 2010-09-22 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Neural network circuit comprising nanoscale synapses and CMOS neurons
CN102044289B (zh) * 2009-10-20 2012-12-05 中芯国际集成电路制造(上海)有限公司 绿色晶体管、纳米硅铁电存储器及其驱动方法
CN103094338B (zh) * 2011-11-01 2015-09-09 中国科学院微电子研究所 半导体器件及其制造方法
JP6501146B2 (ja) * 2014-03-18 2019-04-17 パナソニックＩｐマネジメント株式会社 ニューラルネットワーク回路およびその学習方法
US20150278682A1 (en) 2014-04-01 2015-10-01 Boise State University Memory controlled circuit system and apparatus
US10062426B2 (en) * 2014-04-24 2018-08-28 Micron Technology, Inc. Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
US9760533B2 (en) 2014-08-14 2017-09-12 The Regents On The University Of Michigan Floating-gate transistor array for performing weighted sum computation
US9356074B1 (en) * 2014-11-17 2016-05-31 Sandisk Technologies Inc. Memory array having divided apart bit lines and partially divided bit line selector switches
US10396175B2 (en) * 2014-11-25 2019-08-27 University Of Kentucky Research Foundation Nanogaps on atomically thin materials as non-volatile read/writable memory devices
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6641588B2 (ja) 2015-09-18 2020-02-05 セメダイン株式会社 接着方法
US9712146B2 (en) 2015-09-18 2017-07-18 University Of Notre Dame Du Lac Mixed signal processors
CN106558609B (zh) * 2015-09-24 2020-01-10 中国科学院微电子研究所 隧穿场效应晶体管及其制造方法
CN108140581B (zh) * 2015-09-30 2021-09-07 国立研究开发法人科学技术振兴机构 隧道场效应晶体管
KR101740986B1 (ko) * 2016-01-29 2017-05-29 서울시립대학교 산학협력단 Ler에 따른 임의 변화를 최소화하는 디자인 파라미터 결정 장치 및 결정 방법
US9659249B1 (en) 2016-09-27 2017-05-23 International Business Machines Corporation Pre-programmed resistive cross-point array for neural network
US9799777B1 (en) * 2016-10-07 2017-10-24 International Business Machines Corporation Floating gate memory in a channel last vertical FET flow
US9852790B1 (en) 2016-10-26 2017-12-26 International Business Machines Corporation Circuit methodology for highly linear and symmetric resistive processing unit
US10332874B2 (en) 2017-05-03 2019-06-25 International Business Machines Corporation Indirect readout FET
US10134472B1 (en) 2017-06-30 2018-11-20 International Business Machines Corporation Floating gate architecture for deep neural network application
US10374041B2 (en) 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353790A (ja) 1999-04-13 2000-12-19 Sharp Corp 強誘電体アプリケーションのためのＰｂ５Ｇｅ３Ｏ１１薄膜の化学蒸着法
JP2002252348A (ja) 2001-02-26 2002-09-06 Sharp Corp 半導体装置の製造方法
JP2004235230A (ja) 2003-01-28 2004-08-19 Fujitsu Ltd 短チャネル効果を抑制したｍｉｓ型電解効果トランジスタ
JP2009532905A (ja) 2006-04-04 2009-09-10 マイクロン テクノロジー， インク． ナノＦｉｎトンネリング・トランジスタ
US20150318029A1 (en) 2009-12-02 2015-11-05 Altera Corporation Integrated Circuits with Asymmetric and Stacked Transistors
US20160218211A1 (en) 2015-01-23 2016-07-28 Qualcomm Incorporated Fabrication of a transistor including a tunneling layer
JP2016171216A (ja) 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法

Also Published As

Publication number Publication date
CN111512438A (zh) 2020-08-07
US11177349B2 (en) 2021-11-16
US20190198617A1 (en) 2019-06-27
DE112018005614T5 (de) 2020-07-02
GB202010141D0 (en) 2020-08-19
GB2583299A (en) 2020-10-21
CN111512438B (zh) 2023-11-07
US20200152741A1 (en) 2020-05-14
US20210408240A1 (en) 2021-12-30
US20190312108A1 (en) 2019-10-10
JP2021507519A (ja) 2021-02-22
DE112018005614B4 (de) 2023-01-19
US11855149B2 (en) 2023-12-26
US10374041B2 (en) 2019-08-06
WO2019123303A1 (en) 2019-06-27
US20230268396A1 (en) 2023-08-24
US12015056B2 (en) 2024-06-18
GB2583299B (en) 2022-05-04
US10586849B2 (en) 2020-03-10

Similar Documents

Publication Publication Date Title
US12015056B2 (en) Field effect transistor with controllable resistance
CN114651306B (zh) 具有多个极化态的铁电器件和其制造方法
CN112447849B (zh) 半导体器件和形成包括铁电场效应晶体管的器件的方法
US12026609B2 (en) Area and power efficient implementation of resistive processing units using complementary metal oxide semiconductor technology
US10164121B2 (en) Stacked independently contacted field effect transistor having electrically separated first and second gates
US10204907B2 (en) Metal-insulator-metal capacitor analog memory unit cell
US9666582B1 (en) On-chip finFET structures to implement physical unclonable function for security application
CN114258589B (zh) 可重新配置的基于finfet的人工神经元及突触设备
US11804556B2 (en) Ferroelectric-assisted tunneling selector device
CN110047542B (zh) 半导体元件
KR101835231B1 (ko) 반도체 소자
US11031384B2 (en) Integrated circuits and methods of manufacturing and designing the same
TW202109855A (zh) 半導體元件及形成包括鐵電場效電晶體的元件的方法
WO2023020089A1 (en) Semiconductor structure with embedded capacitor
US10381408B2 (en) Method to fabricate discrete vertical transistors
TW202123344A (zh) 三維無接面型神經元網路元件及其製作方法
KR102581120B1 (ko) Rram 디바이스 구조물 및 제조 방법
US11201244B2 (en) FinFET resistive switching device having interstitial charged particles for memory and computational applications
KR102108175B1 (ko) 반도체 장치의 제조 방법
US20190251430A1 (en) Mixed signal cmos rpu with digital weight storage
CN119968942A (zh) 用于形成和集成高电压FinFET I/O器件与纳米片逻辑器件的结构

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210525

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20220502

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220705

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20221005

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221021

RD12 Notification of acceptance of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7432

Effective date: 20221021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20221021

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20221205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230404

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230606

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230822

RD14 Notification of resignation of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7434

Effective date: 20230823

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230913

R150 Certificate of patent or registration of utility model

Ref document number: 7355393

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150