JP2021507519A5 - - Google Patents
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- JP2021507519A5 JP2021507519A5 JP2020532918A JP2020532918A JP2021507519A5 JP 2021507519 A5 JP2021507519 A5 JP 2021507519A5 JP 2020532918 A JP2020532918 A JP 2020532918A JP 2020532918 A JP2020532918 A JP 2020532918A JP 2021507519 A5 JP2021507519 A5 JP 2021507519A5
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- JP
- Japan
- Prior art keywords
- forming
- energy barrier
- channel region
- source terminal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 22
- 230000004888 barrier function Effects 0.000 claims 16
- 238000000034 method Methods 0.000 claims 12
- 125000006850 spacer group Chemical group 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 239000002019 doping agent Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/850,098 | 2017-12-21 | ||
| US15/850,098 US10374041B2 (en) | 2017-12-21 | 2017-12-21 | Field effect transistor with controllable resistance |
| PCT/IB2018/060321 WO2019123303A1 (en) | 2017-12-21 | 2018-12-19 | Field effect transistor with controllable resistance |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021507519A JP2021507519A (ja) | 2021-02-22 |
| JP2021507519A5 true JP2021507519A5 (enExample) | 2021-04-01 |
| JP7355393B2 JP7355393B2 (ja) | 2023-10-03 |
Family
ID=66949653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020532918A Active JP7355393B2 (ja) | 2017-12-21 | 2018-12-19 | 半導体デバイスを形成する方法および半導体デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US10374041B2 (enExample) |
| JP (1) | JP7355393B2 (enExample) |
| CN (1) | CN111512438B (enExample) |
| DE (1) | DE112018005614B4 (enExample) |
| GB (1) | GB2583299B (enExample) |
| WO (1) | WO2019123303A1 (enExample) |
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| US11018256B2 (en) * | 2019-08-23 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selective internal gate structure for ferroelectric semiconductor devices |
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| US11139315B2 (en) * | 2019-10-31 | 2021-10-05 | Qualcomm Incorporated | Ferroelectric transistor |
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| US11171157B1 (en) | 2020-05-05 | 2021-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a MFMIS memory device |
| US11322519B2 (en) * | 2020-05-28 | 2022-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of fabricating the same |
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| DE102020207439A1 (de) * | 2020-06-16 | 2021-12-16 | Forschungszentrum Jülich GmbH | Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren |
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| US11501812B2 (en) * | 2020-07-31 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices including ferroelectric memory and methods of forming the same |
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| WO2022131787A1 (ko) * | 2020-12-18 | 2022-06-23 | 한국과학기술원 | 빛에 반응하는 뉴런 소자를 구현하는 트랜지스터 |
| WO2022181999A1 (ko) * | 2021-02-23 | 2022-09-01 | 한국과학기술원 | 우수한 선형성 특성을 갖는 뉴로모픽 시냅스 소자 및 그 동작 방법 |
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| US11769815B2 (en) * | 2021-03-05 | 2023-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device |
| KR102956012B1 (ko) * | 2021-06-04 | 2026-04-21 | 삼성전자주식회사 | 박막 구조체, 이를 포함하는 반도체 소자 및 반도체 소자를 포함하는 반도체 장치 |
| US12216026B2 (en) * | 2021-06-29 | 2025-02-04 | Khalifa University of Science and Technology | Low power memristive vacuum sensor |
| KR102932198B1 (ko) | 2021-07-01 | 2026-02-26 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치 제조 방법 |
| WO2023277817A2 (en) * | 2021-07-02 | 2023-01-05 | National University Of Singapore | Heterostructures and electronic devices comprising heterostructures |
| US11810982B2 (en) * | 2021-08-02 | 2023-11-07 | Globalfoundries Singapore Pte. Ltd. | Nonvolatile memory device with a doped region between a source and a drain and integration schemes |
| US11929404B2 (en) | 2021-09-01 | 2024-03-12 | International Business Machines Corporation | Transistor gates having embedded metal-insulator-metal capacitors |
| KR20230043634A (ko) * | 2021-09-24 | 2023-03-31 | 에스케이하이닉스 주식회사 | 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치 |
| CN115881804B (zh) * | 2021-09-27 | 2025-07-04 | 中国科学院物理研究所 | 一种模拟生物信号的半导体器件 |
| US12254915B1 (en) | 2023-08-31 | 2025-03-18 | Macronix International Co., Ltd. | Integrated circuit structure and method for forming and operating the same |
| TWI872673B (zh) * | 2023-08-31 | 2025-02-11 | 旺宏電子股份有限公司 | 積體電路結構及其形成與操作方法 |
| US20250086443A1 (en) | 2023-09-11 | 2025-03-13 | Macronix International Co., Ltd. | Universal memories for in-memory computing |
| US20250386583A1 (en) * | 2024-06-17 | 2025-12-18 | Intel Corporation | Transistor arrangements with programmable gates for threshold voltage tuning |
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| EP2230633A1 (en) | 2009-03-17 | 2010-09-22 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Neural network circuit comprising nanoscale synapses and CMOS neurons |
| CN102044289B (zh) * | 2009-10-20 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | 绿色晶体管、纳米硅铁电存储器及其驱动方法 |
| US9496268B2 (en) * | 2009-12-02 | 2016-11-15 | Altera Corporation | Integrated circuits with asymmetric and stacked transistors |
| CN103094338B (zh) * | 2011-11-01 | 2015-09-09 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| JP6501146B2 (ja) * | 2014-03-18 | 2019-04-17 | パナソニックＩｐマネジメント株式会社 | ニューラルネットワーク回路およびその学習方法 |
| US20150278682A1 (en) | 2014-04-01 | 2015-10-01 | Boise State University | Memory controlled circuit system and apparatus |
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| CN106558609B (zh) * | 2015-09-24 | 2020-01-10 | 中国科学院微电子研究所 | 隧穿场效应晶体管及其制造方法 |
| CN108140581B (zh) * | 2015-09-30 | 2021-09-07 | 国立研究开发法人科学技术振兴机构 | 隧道场效应晶体管 |
| KR101740986B1 (ko) * | 2016-01-29 | 2017-05-29 | 서울시립대학교 산학협력단 | Ler에 따른 임의 변화를 최소화하는 디자인 파라미터 결정 장치 및 결정 방법 |
| US9659249B1 (en) | 2016-09-27 | 2017-05-23 | International Business Machines Corporation | Pre-programmed resistive cross-point array for neural network |
| US9799777B1 (en) * | 2016-10-07 | 2017-10-24 | International Business Machines Corporation | Floating gate memory in a channel last vertical FET flow |
| US9852790B1 (en) | 2016-10-26 | 2017-12-26 | International Business Machines Corporation | Circuit methodology for highly linear and symmetric resistive processing unit |
| US10332874B2 (en) | 2017-05-03 | 2019-06-25 | International Business Machines Corporation | Indirect readout FET |
| US10134472B1 (en) | 2017-06-30 | 2018-11-20 | International Business Machines Corporation | Floating gate architecture for deep neural network application |
| US10374041B2 (en) | 2017-12-21 | 2019-08-06 | International Business Machines Corporation | Field effect transistor with controllable resistance |
-
2017
- 2017-12-21 US US15/850,098 patent/US10374041B2/en active Active
-
2018
- 2018-12-19 WO PCT/IB2018/060321 patent/WO2019123303A1/en not_active Ceased
- 2018-12-19 GB GB2010141.6A patent/GB2583299B/en active Active
- 2018-12-19 JP JP2020532918A patent/JP7355393B2/ja active Active
- 2018-12-19 CN CN201880082340.XA patent/CN111512438B/zh active Active
- 2018-12-19 DE DE112018005614.7T patent/DE112018005614B4/de active Active
-
2019
- 2019-06-07 US US16/434,711 patent/US10586849B2/en not_active Expired - Fee Related
-
2020
- 2020-01-20 US US16/747,027 patent/US11177349B2/en not_active Expired - Fee Related
-
2021
- 2021-09-14 US US17/474,260 patent/US11855149B2/en active Active
-
2023
- 2023-04-25 US US18/306,359 patent/US12015056B2/en active Active
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