DE112004001442T5 - Variieren der Ladungsträgerbeweglichkeit in Halb-Leiterbauelementen, um Gesamtentwurfsziele zu erreichen - Google Patents
Variieren der Ladungsträgerbeweglichkeit in Halb-Leiterbauelementen, um Gesamtentwurfsziele zu erreichen Download PDFInfo
- Publication number
- DE112004001442T5 DE112004001442T5 DE112004001442T DE112004001442T DE112004001442T5 DE 112004001442 T5 DE112004001442 T5 DE 112004001442T5 DE 112004001442 T DE112004001442 T DE 112004001442T DE 112004001442 T DE112004001442 T DE 112004001442T DE 112004001442 T5 DE112004001442 T5 DE 112004001442T5
- Authority
- DE
- Germany
- Prior art keywords
- gate
- bridge
- finfet
- insulating layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000013461 design Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 56
- 239000002800 charge carrier Substances 0.000 claims description 19
- 230000037230 mobility Effects 0.000 description 43
- 238000000034 method Methods 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 229910052732 germanium Inorganic materials 0.000 description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 230000009977 dual effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 230000029305 taxis Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- -1 structures Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
- H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/011—Manufacture or treatment comprising FinFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/633,504 | 2003-08-05 | ||
| US10/633,504 US7095065B2 (en) | 2003-08-05 | 2003-08-05 | Varying carrier mobility in semiconductor devices to achieve overall design goals |
| PCT/US2004/024590 WO2005034207A2 (en) | 2003-08-05 | 2004-07-28 | Varying carrier mobility on finfet active surfaces to achieve overall design goals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112004001442T5 true DE112004001442T5 (de) | 2006-06-08 |
Family
ID=34115850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112004001442T Withdrawn DE112004001442T5 (de) | 2003-08-05 | 2004-07-28 | Variieren der Ladungsträgerbeweglichkeit in Halb-Leiterbauelementen, um Gesamtentwurfsziele zu erreichen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7095065B2 (https=) |
| JP (1) | JP2007501524A (https=) |
| KR (1) | KR101042713B1 (https=) |
| CN (1) | CN1826696B (https=) |
| DE (1) | DE112004001442T5 (https=) |
| GB (1) | GB2419234B (https=) |
| TW (1) | TWI363421B (https=) |
| WO (1) | WO2005034207A2 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855607B2 (en) * | 2003-06-12 | 2005-02-15 | Advanced Micro Devices, Inc. | Multi-step chemical mechanical polishing of a gate area in a FinFET |
| US6946377B2 (en) * | 2003-10-29 | 2005-09-20 | Texas Instruments Incorporated | Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the same |
| US7087471B2 (en) * | 2004-03-15 | 2006-08-08 | International Business Machines Corporation | Locally thinned fins |
| FR2899017A1 (fr) * | 2006-03-21 | 2007-09-28 | St Microelectronics Sa | Procede de realisation d'un transistor a canal comprenant du germanium |
| WO2007122567A1 (en) * | 2006-04-26 | 2007-11-01 | Nxp B.V. | Non-volatile memory device |
| US7517764B2 (en) * | 2006-06-29 | 2009-04-14 | International Business Machines Corporation | Bulk FinFET device |
| US8883597B2 (en) * | 2007-07-31 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabrication of a FinFET element |
| FR2928028B1 (fr) * | 2008-02-27 | 2011-07-15 | St Microelectronics Crolles 2 | Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant. |
| FR2928029B1 (fr) * | 2008-02-27 | 2011-04-08 | St Microelectronics Crolles 2 | Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant. |
| JP5718585B2 (ja) * | 2010-05-19 | 2015-05-13 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法、並びにデータ処理システム |
| US20120146101A1 (en) * | 2010-12-13 | 2012-06-14 | Chun-Hsien Lin | Multi-gate transistor devices and manufacturing method thereof |
| US9059001B2 (en) * | 2011-12-16 | 2015-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with biased feature |
| DE112011105996B4 (de) | 2011-12-22 | 2023-11-16 | Intel Corporation | Halbleiterbauelement mit einem verengten Halbleiterkörper |
| CN103474461B (zh) * | 2012-06-06 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管及其形成方法 |
| US8841189B1 (en) * | 2013-06-14 | 2014-09-23 | International Business Machines Corporation | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same |
| US9425275B2 (en) | 2014-06-13 | 2016-08-23 | Samsung Electronics Co., Ltd. | Integrated circuit chips having field effect transistors with different gate designs |
| US9112032B1 (en) * | 2014-06-16 | 2015-08-18 | Globalfoundries Inc. | Methods of forming replacement gate structures on semiconductor devices |
| US9590074B1 (en) | 2015-12-05 | 2017-03-07 | International Business Machines Corporation | Method to prevent lateral epitaxial growth in semiconductor devices |
| US10879125B2 (en) * | 2018-12-27 | 2020-12-29 | Nanya Technology Corporation | FinFET structure and method of manufacturing the same |
| US11670675B2 (en) | 2020-12-04 | 2023-06-06 | United Semiconductor Japan Co., Ltd. | Semiconductor device |
| CN115669260A (zh) * | 2021-05-12 | 2023-01-31 | 长江存储科技有限责任公司 | 具有三维晶体管的存储器外围电路及其形成方法 |
| CN113764348B (zh) * | 2021-09-07 | 2023-06-16 | 上海集成电路装备材料产业创新中心有限公司 | 鳍式半导体器件的制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61112364A (ja) * | 1984-11-07 | 1986-05-30 | Hitachi Ltd | 半導体装置 |
| JPH03250770A (ja) * | 1990-02-28 | 1991-11-08 | Sony Corp | 半導体装置 |
| US5391506A (en) | 1992-01-31 | 1995-02-21 | Kawasaki Steel Corporation | Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
| JPH06342911A (ja) * | 1993-06-01 | 1994-12-13 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US6563143B2 (en) * | 1999-07-29 | 2003-05-13 | Stmicroelectronics, Inc. | CMOS circuit of GaAs/Ge on Si substrate |
| US20020011612A1 (en) | 2000-07-31 | 2002-01-31 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2002151688A (ja) * | 2000-08-28 | 2002-05-24 | Mitsubishi Electric Corp | Ｍｏｓ型半導体装置およびその製造方法 |
| US6916727B2 (en) * | 2001-06-21 | 2005-07-12 | Massachusetts Institute Of Technology | Enhancement of P-type metal-oxide-semiconductor field effect transistors |
| US6492212B1 (en) * | 2001-10-05 | 2002-12-10 | International Business Machines Corporation | Variable threshold voltage double gated transistors and method of fabrication |
| US6657259B2 (en) | 2001-12-04 | 2003-12-02 | International Business Machines Corporation | Multiple-plane FinFET CMOS |
| JP4265882B2 (ja) * | 2001-12-13 | 2009-05-20 | 忠弘 大見 | 相補型ｍｉｓ装置 |
| US7214991B2 (en) | 2002-12-06 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS inverters configured using multiple-gate transistors |
| US6909147B2 (en) * | 2003-05-05 | 2005-06-21 | International Business Machines Corporation | Multi-height FinFETS |
-
2003
- 2003-08-05 US US10/633,504 patent/US7095065B2/en not_active Expired - Lifetime
-
2004
- 2004-07-28 JP JP2006522626A patent/JP2007501524A/ja active Pending
- 2004-07-28 WO PCT/US2004/024590 patent/WO2005034207A2/en not_active Ceased
- 2004-07-28 KR KR1020067002327A patent/KR101042713B1/ko not_active Expired - Fee Related
- 2004-07-28 CN CN200480021176XA patent/CN1826696B/zh not_active Expired - Lifetime
- 2004-07-28 DE DE112004001442T patent/DE112004001442T5/de not_active Withdrawn
- 2004-07-28 GB GB0526405A patent/GB2419234B/en not_active Expired - Fee Related
- 2004-08-03 TW TW093123171A patent/TWI363421B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7095065B2 (en) | 2006-08-22 |
| GB2419234B (en) | 2007-02-21 |
| JP2007501524A (ja) | 2007-01-25 |
| WO2005034207A3 (en) | 2005-06-30 |
| TWI363421B (en) | 2012-05-01 |
| US20050029603A1 (en) | 2005-02-10 |
| CN1826696A (zh) | 2006-08-30 |
| TW200509390A (en) | 2005-03-01 |
| GB0526405D0 (en) | 2006-02-08 |
| WO2005034207A2 (en) | 2005-04-14 |
| KR20060054420A (ko) | 2006-05-22 |
| CN1826696B (zh) | 2011-01-26 |
| KR101042713B1 (ko) | 2011-06-20 |
| GB2419234A (en) | 2006-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10393565B4 (de) | Verfahren zur Herstellung eines Halbleiterelements mit einer U-förmigen Gate-Struktur | |
| DE112004001442T5 (de) | Variieren der Ladungsträgerbeweglichkeit in Halb-Leiterbauelementen, um Gesamtentwurfsziele zu erreichen | |
| DE112004000578B4 (de) | Verfahren zur Herstellung eines Gates in einem FinFET-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des FinFET-Bauelements | |
| DE10393687B4 (de) | Doppelgatehalbleiterbauelement mit separaten Gates und Verfahren zur Herstellung des Doppelgatehalbleiterbauelements | |
| DE112006001735B4 (de) | Blockkontaktarchitekturen für Transistoren mit Kanälen in einer Nano-Größenordnung und Verfahren zum Ausbilden | |
| DE112004000586B4 (de) | Fin Fet-Bauelement und Verfahren zur Herstellung von Strukturen in Fin Fet-Bauelementen | |
| DE602004008034T2 (de) | Trigate und gate-all-around mosfet-bauelemente und zugehörige herstellungsverfahren | |
| DE102006012416B4 (de) | Halbleiterbauelement (FET) mit einem runden Nano-Leitungstransistorkanal | |
| DE112005001488B4 (de) | Tri-Gate Bauelement mit hoher Beweglichkeit und dessen Herstellungsverfahren | |
| DE112005002397B4 (de) | Nicht-planare Halbleitereinrichtung mit verjüngtem unteren Körperabschnitt und Verfahren zur Herstellung | |
| DE102013214196B4 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE102011088717B4 (de) | FINFET mit erhöhter Effizienz und Herstellverfahren | |
| DE102013105765B4 (de) | FinFET mit eingebautem MOS-Varaktor und Verfahren zu seiner Herstellung | |
| DE112004001030B4 (de) | FINFET mit Doppelsiliziumgateschicht für chemisch-mechanische Poliereinebnung | |
| DE112004002633B4 (de) | Verfahren zur Herstellung eines Steg-Feldeffekttransistors | |
| DE102008059646B4 (de) | Verfahren zur Herstellung eines Halbleiterbauelements als Mehr-Gatetransistor mit Stegen mit einer Länge, die durch die Gateelektrode definiert ist und Halbleiterbauelement | |
| DE10234392B4 (de) | Halbleiterbauelement mit Gate-Elektrodenstruktur und Herstellungsverfahren hierfür | |
| DE102013101113A1 (de) | Vorrichtung und Verfahren für einen Leistungs-MOS-Transistor | |
| DE102005028640B4 (de) | Verfahren zur Herstellung eines Transistors Fin-FET mit einem Dreifachkanal in einem Speicherbauelement | |
| DE102012105737A1 (de) | Bauelement und Verfahren zu dessen Herstellung | |
| DE102019206553A1 (de) | Halbleitervorrichtung mit verbesserter Gate-Source/Drain-Metallisierungsisolation | |
| DE4212829A1 (de) | Verfahren zur herstellung von metall-oxid-halbleiter-feldeffekttransistoren | |
| DE102015108837B4 (de) | Verfahren zur Herstellung eines FinFET und FinFET-Struktur | |
| DE102021100720A1 (de) | Kontakte für halbleitervorrichtungen und verfahren zu deren herstellung | |
| DE102017124637A1 (de) | Herstellungsverfahren für ein Halbleiter-Bauelement und ein Halbleiter-Bauelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law |
Ref document number: 112004001442 Country of ref document: DE Date of ref document: 20060608 Kind code of ref document: P |
|
| 8127 | New person/name/address of the applicant |
Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY |
|
| 8128 | New person/name/address of the agent |
Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER, |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20140201 |