DE102019214213A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102019214213A1
DE102019214213A1 DE102019214213.3A DE102019214213A DE102019214213A1 DE 102019214213 A1 DE102019214213 A1 DE 102019214213A1 DE 102019214213 A DE102019214213 A DE 102019214213A DE 102019214213 A1 DE102019214213 A1 DE 102019214213A1
Authority
DE
Germany
Prior art keywords
gate
voltage
electrode
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102019214213.3A
Other languages
German (de)
English (en)
Inventor
Katsumi Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102019214213A1 publication Critical patent/DE102019214213A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
DE102019214213.3A 2018-09-25 2019-09-18 Halbleitervorrichtung Pending DE102019214213A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-178887 2018-09-25
JP2018178887A JP7068981B2 (ja) 2018-09-25 2018-09-25 半導体装置

Publications (1)

Publication Number Publication Date
DE102019214213A1 true DE102019214213A1 (de) 2020-03-26

Family

ID=69725625

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102019214213.3A Pending DE102019214213A1 (de) 2018-09-25 2019-09-18 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US11031491B2 (https=)
JP (1) JP7068981B2 (https=)
CN (1) CN110943125B (https=)
DE (1) DE102019214213A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7068981B2 (ja) * 2018-09-25 2022-05-17 三菱電機株式会社 半導体装置
JP7210342B2 (ja) * 2019-03-18 2023-01-23 株式会社東芝 半導体装置
JP7352443B2 (ja) * 2019-11-01 2023-09-28 株式会社東芝 半導体装置の制御方法
JP7364488B2 (ja) * 2020-02-05 2023-10-18 株式会社東芝 半導体装置
JP7387562B2 (ja) * 2020-09-10 2023-11-28 株式会社東芝 半導体素子および半導体装置
JP7330155B2 (ja) * 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7330154B2 (ja) * 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7548776B2 (ja) * 2020-11-02 2024-09-10 株式会社東芝 半導体装置及び半導体モジュール
JP7444027B2 (ja) * 2020-11-06 2024-03-06 三菱電機株式会社 半導体装置
JP7722648B2 (ja) * 2020-12-04 2025-08-13 国立大学法人 東京大学 半導体装置
JP7597573B2 (ja) * 2020-12-25 2024-12-10 ローム株式会社 半導体装置
CN116259656A (zh) * 2021-12-09 2023-06-13 比亚迪半导体股份有限公司 Igbt元胞结构和功率器件及制备和控制方法及车辆
JP7682119B2 (ja) * 2022-03-17 2025-05-23 三菱電機株式会社 半導体装置
DE102022119632A1 (de) 2022-08-04 2024-02-15 Infineon Technologies Ag Leistungshalbleitervorrichtung, Verfahren zum Produzieren einer Leistungshalbleitervorrichtung und Verfahren zum Betreiben einer Leistungshalbleitervorrichtung
CN116072721B (zh) * 2023-03-17 2023-06-30 深圳市威兆半导体股份有限公司 绝缘栅双极型晶体管及其载流子浓度控制方法
CN116314309B (zh) * 2023-05-23 2023-07-25 四川奥库科技有限公司 逆导型igbt器件的背面栅结构及其加工方法
JP2025035370A (ja) * 2023-09-01 2025-03-13 株式会社東芝 駆動装置および半導体装置
CN118507527B (zh) * 2024-07-18 2024-10-11 上海埃积半导体有限公司 一种双栅控制器件及制作方法

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement
JPH03194971A (ja) * 1989-12-22 1991-08-26 Meidensha Corp 電力用半導体素子
JP2582724Y2 (ja) * 1991-10-08 1998-10-08 株式会社明電舎 絶縁ゲート型半導体素子
JP4479052B2 (ja) * 2000-05-09 2010-06-09 富士電機システムズ株式会社 半導体装置
JP5245157B2 (ja) * 2008-06-03 2013-07-24 独立行政法人産業技術総合研究所 半導体双方向スイッチング装置
JP5417811B2 (ja) 2008-11-18 2014-02-19 株式会社デンソー 半導体装置
JP2010251517A (ja) * 2009-04-15 2010-11-04 Tokyo Electric Power Co Inc:The パワー半導体素子
TWI402985B (zh) * 2009-06-02 2013-07-21 Anpec Electronics Corp 絕緣閘雙極電晶體與二極體之整合結構及其製作方法
JP5369300B2 (ja) * 2009-09-16 2013-12-18 三菱電機株式会社 半導体装置およびその製造方法
JP5754543B2 (ja) * 2012-03-16 2015-07-29 富士電機株式会社 半導体装置
JP5605664B2 (ja) 2013-02-25 2014-10-15 独立行政法人産業技術総合研究所 半導体双方向スイッチング装置
EP3116028B1 (en) * 2013-06-24 2021-03-24 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
EP3101809A4 (en) * 2014-01-31 2017-08-23 Hitachi, Ltd. Semiconductor element drive apparatus and power conversion apparatus using same
JP6416143B2 (ja) * 2016-03-16 2018-10-31 株式会社東芝 半導体装置
CN107768434A (zh) * 2017-10-20 2018-03-06 电子科技大学 一种双向igbt及其制造方法
JP7068981B2 (ja) * 2018-09-25 2022-05-17 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
JP7068981B2 (ja) 2022-05-17
CN110943125B (zh) 2023-10-03
CN110943125A (zh) 2020-03-31
US11031491B2 (en) 2021-06-08
JP2020053466A (ja) 2020-04-02
US20200098903A1 (en) 2020-03-26

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Free format text: PREVIOUS MAIN CLASS: H01L0029739000

Ipc: H10D0012000000