DE102009010885B4 - Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür - Google Patents

Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür Download PDF

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Publication number
DE102009010885B4
DE102009010885B4 DE102009010885.8A DE102009010885A DE102009010885B4 DE 102009010885 B4 DE102009010885 B4 DE 102009010885B4 DE 102009010885 A DE102009010885 A DE 102009010885A DE 102009010885 B4 DE102009010885 B4 DE 102009010885B4
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DE
Germany
Prior art keywords
lateral dimension
passivation layer
opening
final passivation
metal column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009010885.8A
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German (de)
English (en)
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DE102009010885A1 (de
Inventor
Frank Feustel
Kai Frohberg
Thomas Werner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
AMD Fab 36 LLC and Co KG
Advanced Micro Devices Inc
AMD Fab 36 LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMD Fab 36 LLC and Co KG, Advanced Micro Devices Inc, AMD Fab 36 LLC filed Critical AMD Fab 36 LLC and Co KG
Priority to DE102009010885.8A priority Critical patent/DE102009010885B4/de
Priority to PCT/EP2010/001092 priority patent/WO2010097191A1/en
Priority to CN2010800183996A priority patent/CN102428551A/zh
Priority to KR1020117022596A priority patent/KR20110128897A/ko
Priority to JP2011551432A priority patent/JP2012519374A/ja
Priority to US12/710,458 priority patent/US9245860B2/en
Publication of DE102009010885A1 publication Critical patent/DE102009010885A1/de
Application granted granted Critical
Publication of DE102009010885B4 publication Critical patent/DE102009010885B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/234—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
DE102009010885.8A 2009-02-27 2009-02-27 Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür Active DE102009010885B4 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102009010885.8A DE102009010885B4 (de) 2009-02-27 2009-02-27 Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür
PCT/EP2010/001092 WO2010097191A1 (en) 2009-02-27 2010-02-22 A metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom
CN2010800183996A CN102428551A (zh) 2009-02-27 2010-02-22 包含底部有直径缩减的金属支柱的半导体器件的金属化系统
KR1020117022596A KR20110128897A (ko) 2009-02-27 2010-02-22 하부에 감소된 지름을 갖는 금속 필러들을 포함하는 반도체 디바이스의 금속화 시스템
JP2011551432A JP2012519374A (ja) 2009-02-27 2010-02-22 底部で減少する直径を有する金属ピラーを含む半導体デバイスのメタライゼーションシステム
US12/710,458 US9245860B2 (en) 2009-02-27 2010-02-23 Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009010885.8A DE102009010885B4 (de) 2009-02-27 2009-02-27 Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür

Publications (2)

Publication Number Publication Date
DE102009010885A1 DE102009010885A1 (de) 2010-09-02
DE102009010885B4 true DE102009010885B4 (de) 2014-12-31

Family

ID=42102254

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009010885.8A Active DE102009010885B4 (de) 2009-02-27 2009-02-27 Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US9245860B2 (https=)
JP (1) JP2012519374A (https=)
KR (1) KR20110128897A (https=)
CN (1) CN102428551A (https=)
DE (1) DE102009010885B4 (https=)
WO (1) WO2010097191A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8344504B2 (en) 2010-07-29 2013-01-01 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Semiconductor structure comprising pillar and moisture barrier
US8314472B2 (en) 2010-07-29 2012-11-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Semiconductor structure comprising pillar
US20120273937A1 (en) * 2011-04-30 2012-11-01 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer
US8536707B2 (en) 2011-11-29 2013-09-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor structure comprising moisture barrier and conductive redistribution layer
US9768142B2 (en) 2013-07-17 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming bonding structures
US10049893B2 (en) * 2016-05-11 2018-08-14 Advanced Semiconductor Engineering, Inc. Semiconductor device with a conductive post
US10636758B2 (en) 2017-10-05 2020-04-28 Texas Instruments Incorporated Expanded head pillar for bump bonds
KR102940785B1 (ko) 2020-03-26 2026-03-20 삼성전자주식회사 반도체 패키지
US20240088072A1 (en) * 2022-09-13 2024-03-14 Micron Technology, Inc. Embedded metal pads

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656858A (en) * 1994-10-19 1997-08-12 Nippondenso Co., Ltd. Semiconductor device with bump structure
US5773897A (en) * 1997-02-21 1998-06-30 Raytheon Company Flip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumps
US5912510A (en) * 1996-05-29 1999-06-15 Motorola, Inc. Bonding structure for an electronic device
US20080303142A1 (en) * 2007-06-05 2008-12-11 Kim Baeyong Electronic system with vertical intermetallic compound

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US5137597A (en) * 1991-04-11 1992-08-11 Microelectronics And Computer Technology Corporation Fabrication of metal pillars in an electronic component using polishing
JPH0555228A (ja) * 1991-08-27 1993-03-05 Nec Corp 半導体装置
JPH05206139A (ja) * 1991-11-19 1993-08-13 Nec Corp 基板接続電極およびその製造方法
JP2773578B2 (ja) * 1992-10-02 1998-07-09 日本電気株式会社 半導体装置の製造方法
US5891756A (en) * 1997-06-27 1999-04-06 Delco Electronics Corporation Process for converting a wire bond pad to a flip chip solder bump pad and pad formed thereby
JP3420703B2 (ja) * 1998-07-16 2003-06-30 株式会社東芝 半導体装置の製造方法
US6103552A (en) * 1998-08-10 2000-08-15 Lin; Mou-Shiung Wafer scale packaging scheme
JP4131595B2 (ja) * 1999-02-05 2008-08-13 三洋電機株式会社 半導体装置の製造方法
JP2002076046A (ja) * 2000-09-04 2002-03-15 Citizen Watch Co Ltd 半導体装置の製造方法
US6818545B2 (en) * 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
TWI244129B (en) * 2002-10-25 2005-11-21 Via Tech Inc Bonding column process
JP4119866B2 (ja) * 2004-05-12 2008-07-16 富士通株式会社 半導体装置
TWI242253B (en) * 2004-10-22 2005-10-21 Advanced Semiconductor Eng Bumping process and structure thereof
JP2006295109A (ja) * 2005-03-14 2006-10-26 Citizen Watch Co Ltd 半導体装置とその製造方法
KR100857365B1 (ko) * 2007-02-28 2008-09-05 주식회사 네패스 반도체 장치의 범프 구조물

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656858A (en) * 1994-10-19 1997-08-12 Nippondenso Co., Ltd. Semiconductor device with bump structure
US5912510A (en) * 1996-05-29 1999-06-15 Motorola, Inc. Bonding structure for an electronic device
US5773897A (en) * 1997-02-21 1998-06-30 Raytheon Company Flip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumps
US20080303142A1 (en) * 2007-06-05 2008-12-11 Kim Baeyong Electronic system with vertical intermetallic compound

Also Published As

Publication number Publication date
DE102009010885A1 (de) 2010-09-02
US20100219527A1 (en) 2010-09-02
WO2010097191A1 (en) 2010-09-02
JP2012519374A (ja) 2012-08-23
CN102428551A (zh) 2012-04-25
US9245860B2 (en) 2016-01-26
KR20110128897A (ko) 2011-11-30

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