CN102428551A - 包含底部有直径缩减的金属支柱的半导体器件的金属化系统 - Google Patents

包含底部有直径缩减的金属支柱的半导体器件的金属化系统 Download PDF

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Publication number
CN102428551A
CN102428551A CN2010800183996A CN201080018399A CN102428551A CN 102428551 A CN102428551 A CN 102428551A CN 2010800183996 A CN2010800183996 A CN 2010800183996A CN 201080018399 A CN201080018399 A CN 201080018399A CN 102428551 A CN102428551 A CN 102428551A
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CN
China
Prior art keywords
metal
passivation layer
opening
final passivation
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800183996A
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English (en)
Chinese (zh)
Inventor
F·福斯特
K·弗罗贝格
T·沃纳
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN102428551A publication Critical patent/CN102428551A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/234—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN2010800183996A 2009-02-27 2010-02-22 包含底部有直径缩减的金属支柱的半导体器件的金属化系统 Pending CN102428551A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009010885.8A DE102009010885B4 (de) 2009-02-27 2009-02-27 Metallisierungssystem eines Halbleiterbauelements mit Metallsäulen mit einem kleineren Durchmesser an der Unterseite und Herstellungsverfahren dafür
DE102009010885.8 2009-02-27
PCT/EP2010/001092 WO2010097191A1 (en) 2009-02-27 2010-02-22 A metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom

Publications (1)

Publication Number Publication Date
CN102428551A true CN102428551A (zh) 2012-04-25

Family

ID=42102254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800183996A Pending CN102428551A (zh) 2009-02-27 2010-02-22 包含底部有直径缩减的金属支柱的半导体器件的金属化系统

Country Status (6)

Country Link
US (1) US9245860B2 (https=)
JP (1) JP2012519374A (https=)
KR (1) KR20110128897A (https=)
CN (1) CN102428551A (https=)
DE (1) DE102009010885B4 (https=)
WO (1) WO2010097191A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8344504B2 (en) 2010-07-29 2013-01-01 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Semiconductor structure comprising pillar and moisture barrier
US8314472B2 (en) 2010-07-29 2012-11-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Semiconductor structure comprising pillar
US20120273937A1 (en) * 2011-04-30 2012-11-01 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer
US8536707B2 (en) 2011-11-29 2013-09-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor structure comprising moisture barrier and conductive redistribution layer
US9768142B2 (en) 2013-07-17 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming bonding structures
US10049893B2 (en) * 2016-05-11 2018-08-14 Advanced Semiconductor Engineering, Inc. Semiconductor device with a conductive post
US10636758B2 (en) 2017-10-05 2020-04-28 Texas Instruments Incorporated Expanded head pillar for bump bonds
KR102940785B1 (ko) 2020-03-26 2026-03-20 삼성전자주식회사 반도체 패키지
US20240088072A1 (en) * 2022-09-13 2024-03-14 Micron Technology, Inc. Embedded metal pads

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121692A1 (en) * 2001-03-05 2002-09-05 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20040082161A1 (en) * 2002-10-25 2004-04-29 Kwun-Yao Ho Process of forming bonding columns
CN1697148A (zh) * 2004-05-12 2005-11-16 富士通株式会社 半导体器件及制造该半导体器件的方法
US20060088992A1 (en) * 2004-10-22 2006-04-27 Advanced Semiconductor Engineering, Inc. Bumping process and structure thereof
US20080303142A1 (en) * 2007-06-05 2008-12-11 Kim Baeyong Electronic system with vertical intermetallic compound

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US5137597A (en) * 1991-04-11 1992-08-11 Microelectronics And Computer Technology Corporation Fabrication of metal pillars in an electronic component using polishing
JPH0555228A (ja) * 1991-08-27 1993-03-05 Nec Corp 半導体装置
JPH05206139A (ja) * 1991-11-19 1993-08-13 Nec Corp 基板接続電極およびその製造方法
JP2773578B2 (ja) * 1992-10-02 1998-07-09 日本電気株式会社 半導体装置の製造方法
US5656858A (en) * 1994-10-19 1997-08-12 Nippondenso Co., Ltd. Semiconductor device with bump structure
US5912510A (en) * 1996-05-29 1999-06-15 Motorola, Inc. Bonding structure for an electronic device
US5773897A (en) * 1997-02-21 1998-06-30 Raytheon Company Flip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumps
US5891756A (en) * 1997-06-27 1999-04-06 Delco Electronics Corporation Process for converting a wire bond pad to a flip chip solder bump pad and pad formed thereby
JP3420703B2 (ja) * 1998-07-16 2003-06-30 株式会社東芝 半導体装置の製造方法
US6103552A (en) * 1998-08-10 2000-08-15 Lin; Mou-Shiung Wafer scale packaging scheme
JP4131595B2 (ja) * 1999-02-05 2008-08-13 三洋電機株式会社 半導体装置の製造方法
JP2002076046A (ja) * 2000-09-04 2002-03-15 Citizen Watch Co Ltd 半導体装置の製造方法
JP2006295109A (ja) * 2005-03-14 2006-10-26 Citizen Watch Co Ltd 半導体装置とその製造方法
KR100857365B1 (ko) * 2007-02-28 2008-09-05 주식회사 네패스 반도체 장치의 범프 구조물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121692A1 (en) * 2001-03-05 2002-09-05 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20040082161A1 (en) * 2002-10-25 2004-04-29 Kwun-Yao Ho Process of forming bonding columns
CN1697148A (zh) * 2004-05-12 2005-11-16 富士通株式会社 半导体器件及制造该半导体器件的方法
US20060088992A1 (en) * 2004-10-22 2006-04-27 Advanced Semiconductor Engineering, Inc. Bumping process and structure thereof
US20080303142A1 (en) * 2007-06-05 2008-12-11 Kim Baeyong Electronic system with vertical intermetallic compound

Also Published As

Publication number Publication date
DE102009010885B4 (de) 2014-12-31
DE102009010885A1 (de) 2010-09-02
US20100219527A1 (en) 2010-09-02
WO2010097191A1 (en) 2010-09-02
JP2012519374A (ja) 2012-08-23
US9245860B2 (en) 2016-01-26
KR20110128897A (ko) 2011-11-30

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Application publication date: 20120425