DE102006012857A1 - Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur - Google Patents

Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur Download PDF

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Publication number
DE102006012857A1
DE102006012857A1 DE102006012857A DE102006012857A DE102006012857A1 DE 102006012857 A1 DE102006012857 A1 DE 102006012857A1 DE 102006012857 A DE102006012857 A DE 102006012857A DE 102006012857 A DE102006012857 A DE 102006012857A DE 102006012857 A1 DE102006012857 A1 DE 102006012857A1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
doping
porous region
silicon
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006012857A
Other languages
German (de)
English (en)
Inventor
Hubert Benzel
Matthias Illing
Franz Laermer
Silvia Kronmueller
Paul Farber
Simon Armbruster
Gerhard Lammel
Ralf Reichenbach
Christoph Schelling
Ando Feyh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE102006012857A priority Critical patent/DE102006012857A1/de
Priority to PCT/EP2007/052227 priority patent/WO2007107461A1/de
Priority to DE502007006500T priority patent/DE502007006500D1/de
Priority to US12/282,842 priority patent/US8148234B2/en
Priority to JP2009500813A priority patent/JP5080555B2/ja
Priority to EP07726749A priority patent/EP1999783B1/de
Publication of DE102006012857A1 publication Critical patent/DE102006012857A1/de
Priority to US13/366,067 priority patent/US20120132925A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Recrystallisation Techniques (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
DE102006012857A 2006-03-21 2006-03-21 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur Withdrawn DE102006012857A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102006012857A DE102006012857A1 (de) 2006-03-21 2006-03-21 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur
PCT/EP2007/052227 WO2007107461A1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur und entsprechende halbleiterstruktur
DE502007006500T DE502007006500D1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur
US12/282,842 US8148234B2 (en) 2006-03-21 2007-03-09 Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure
JP2009500813A JP5080555B2 (ja) 2006-03-21 2007-03-09 半導体構造体の製造方法
EP07726749A EP1999783B1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur
US13/366,067 US20120132925A1 (en) 2006-03-21 2012-02-03 Method for manufacturing a semiconductor structure, and a corresponding semiconductor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006012857A DE102006012857A1 (de) 2006-03-21 2006-03-21 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur

Publications (1)

Publication Number Publication Date
DE102006012857A1 true DE102006012857A1 (de) 2007-09-27

Family

ID=37983457

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102006012857A Withdrawn DE102006012857A1 (de) 2006-03-21 2006-03-21 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur
DE502007006500T Active DE502007006500D1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502007006500T Active DE502007006500D1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur

Country Status (5)

Country Link
US (2) US8148234B2 (https=)
EP (1) EP1999783B1 (https=)
JP (1) JP5080555B2 (https=)
DE (2) DE102006012857A1 (https=)
WO (1) WO2007107461A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104118842B (zh) * 2014-07-02 2017-01-18 上海师范大学 碳化硅介孔阵列材料及其制备方法
US9805931B2 (en) * 2015-08-28 2017-10-31 Varian Semiconductor Equipment Associates, Inc. Liquid immersion doping
EP3141519B1 (fr) * 2015-09-08 2018-03-14 Nivarox-FAR S.A. Procédé de fabrication d'une pièce micromécanique horlogère

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132974A (en) 1975-05-14 1976-11-18 Nec Corp Semiconductor device
US4262295A (en) * 1978-01-30 1981-04-14 Hitachi, Ltd. Semiconductor device
JPS56130914A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6366929A (ja) * 1986-09-08 1988-03-25 Tokyo Ohka Kogyo Co Ltd アンチモン拡散用シリカ系被膜形成組成物
FR2655193B1 (fr) 1989-11-30 1994-09-23 Telemecanique Dispositif semiconducteur de puissance symetrique et son procede de fabrication.
JP3079575B2 (ja) * 1990-12-20 2000-08-21 株式会社日立製作所 半導体装置の製造方法
DE4440390A1 (de) * 1994-11-11 1996-05-15 Stuttgart Mikroelektronik Epitaxie-Verfahren zur Herstellung von Halbleiterschichtsystemen mit ultrakurzen, lateralen Dotierungsübergängen
WO1997040527A1 (de) 1996-04-22 1997-10-30 Siemens Aktiengesellschaft Verfahren zur herstellung eines dotierten gebietes in einem halbleitersubstrat
DE10032579B4 (de) 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
DE10127950B4 (de) 2001-06-08 2007-04-12 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
JP2004095645A (ja) * 2002-08-29 2004-03-25 Seiko Epson Corp 半導体装置および半導体装置の製造方法
DE102004036035B4 (de) 2003-12-16 2015-10-15 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor
JP2005259859A (ja) * 2004-03-10 2005-09-22 Toshiba Ceramics Co Ltd 拡散ウエハおよびその製造方法

Also Published As

Publication number Publication date
WO2007107461A1 (de) 2007-09-27
EP1999783A1 (de) 2008-12-10
JP5080555B2 (ja) 2012-11-21
EP1999783B1 (de) 2011-02-16
DE502007006500D1 (de) 2011-03-31
US20090236610A1 (en) 2009-09-24
US8148234B2 (en) 2012-04-03
JP2009537967A (ja) 2009-10-29
US20120132925A1 (en) 2012-05-31

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R005 Application deemed withdrawn due to failure to request examination

Effective date: 20130322