JP5080555B2 - 半導体構造体の製造方法 - Google Patents

半導体構造体の製造方法 Download PDF

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Publication number
JP5080555B2
JP5080555B2 JP2009500813A JP2009500813A JP5080555B2 JP 5080555 B2 JP5080555 B2 JP 5080555B2 JP 2009500813 A JP2009500813 A JP 2009500813A JP 2009500813 A JP2009500813 A JP 2009500813A JP 5080555 B2 JP5080555 B2 JP 5080555B2
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Japan
Prior art keywords
doping
temperature
porous region
silicon
semiconductor substrate
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Expired - Fee Related
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JP2009500813A
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English (en)
Japanese (ja)
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JP2009537967A5 (https=
JP2009537967A (ja
Inventor
ベンツェル フーベルト
イリング マティアス
レルマー フランツ
クローンミュラー ジルヴィア
ファーバー パウル
アルムブルスター ジーモン
ラメル ゲルハルト
ライヒェンバッハ ラルフ
シェリング クリストフ
フェイ アンド
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Recrystallisation Techniques (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
JP2009500813A 2006-03-21 2007-03-09 半導体構造体の製造方法 Expired - Fee Related JP5080555B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006012857A DE102006012857A1 (de) 2006-03-21 2006-03-21 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur
PCT/EP2007/052227 WO2007107461A1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur und entsprechende halbleiterstruktur

Publications (3)

Publication Number Publication Date
JP2009537967A JP2009537967A (ja) 2009-10-29
JP2009537967A5 JP2009537967A5 (https=) 2012-08-30
JP5080555B2 true JP5080555B2 (ja) 2012-11-21

Family

ID=37983457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009500813A Expired - Fee Related JP5080555B2 (ja) 2006-03-21 2007-03-09 半導体構造体の製造方法

Country Status (5)

Country Link
US (2) US8148234B2 (https=)
EP (1) EP1999783B1 (https=)
JP (1) JP5080555B2 (https=)
DE (2) DE102006012857A1 (https=)
WO (1) WO2007107461A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104118842B (zh) * 2014-07-02 2017-01-18 上海师范大学 碳化硅介孔阵列材料及其制备方法
US9805931B2 (en) * 2015-08-28 2017-10-31 Varian Semiconductor Equipment Associates, Inc. Liquid immersion doping
EP3141519B1 (fr) * 2015-09-08 2018-03-14 Nivarox-FAR S.A. Procédé de fabrication d'une pièce micromécanique horlogère

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132974A (en) 1975-05-14 1976-11-18 Nec Corp Semiconductor device
US4262295A (en) * 1978-01-30 1981-04-14 Hitachi, Ltd. Semiconductor device
JPS56130914A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6366929A (ja) * 1986-09-08 1988-03-25 Tokyo Ohka Kogyo Co Ltd アンチモン拡散用シリカ系被膜形成組成物
FR2655193B1 (fr) 1989-11-30 1994-09-23 Telemecanique Dispositif semiconducteur de puissance symetrique et son procede de fabrication.
JP3079575B2 (ja) * 1990-12-20 2000-08-21 株式会社日立製作所 半導体装置の製造方法
DE4440390A1 (de) * 1994-11-11 1996-05-15 Stuttgart Mikroelektronik Epitaxie-Verfahren zur Herstellung von Halbleiterschichtsystemen mit ultrakurzen, lateralen Dotierungsübergängen
WO1997040527A1 (de) 1996-04-22 1997-10-30 Siemens Aktiengesellschaft Verfahren zur herstellung eines dotierten gebietes in einem halbleitersubstrat
DE10032579B4 (de) 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
DE10127950B4 (de) 2001-06-08 2007-04-12 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
JP2004095645A (ja) * 2002-08-29 2004-03-25 Seiko Epson Corp 半導体装置および半導体装置の製造方法
DE102004036035B4 (de) 2003-12-16 2015-10-15 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor
JP2005259859A (ja) * 2004-03-10 2005-09-22 Toshiba Ceramics Co Ltd 拡散ウエハおよびその製造方法

Also Published As

Publication number Publication date
WO2007107461A1 (de) 2007-09-27
EP1999783A1 (de) 2008-12-10
EP1999783B1 (de) 2011-02-16
DE502007006500D1 (de) 2011-03-31
US20090236610A1 (en) 2009-09-24
US8148234B2 (en) 2012-04-03
JP2009537967A (ja) 2009-10-29
US20120132925A1 (en) 2012-05-31
DE102006012857A1 (de) 2007-09-27

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