JP2009537967A5 - - Google Patents

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Publication number
JP2009537967A5
JP2009537967A5 JP2009500813A JP2009500813A JP2009537967A5 JP 2009537967 A5 JP2009537967 A5 JP 2009537967A5 JP 2009500813 A JP2009500813 A JP 2009500813A JP 2009500813 A JP2009500813 A JP 2009500813A JP 2009537967 A5 JP2009537967 A5 JP 2009537967A5
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JP
Japan
Prior art keywords
doping
temperature
semiconductor substrate
region
porous region
Prior art date
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Application number
JP2009500813A
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English (en)
Japanese (ja)
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JP5080555B2 (ja
JP2009537967A (ja
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Publication date
Priority claimed from DE102006012857A external-priority patent/DE102006012857A1/de
Application filed filed Critical
Publication of JP2009537967A publication Critical patent/JP2009537967A/ja
Publication of JP2009537967A5 publication Critical patent/JP2009537967A5/ja
Application granted granted Critical
Publication of JP5080555B2 publication Critical patent/JP5080555B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009500813A 2006-03-21 2007-03-09 半導体構造体の製造方法 Expired - Fee Related JP5080555B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006012857A DE102006012857A1 (de) 2006-03-21 2006-03-21 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur
PCT/EP2007/052227 WO2007107461A1 (de) 2006-03-21 2007-03-09 Verfahren zur herstellung einer halbleiterstruktur und entsprechende halbleiterstruktur

Publications (3)

Publication Number Publication Date
JP2009537967A JP2009537967A (ja) 2009-10-29
JP2009537967A5 true JP2009537967A5 (https=) 2012-08-30
JP5080555B2 JP5080555B2 (ja) 2012-11-21

Family

ID=37983457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009500813A Expired - Fee Related JP5080555B2 (ja) 2006-03-21 2007-03-09 半導体構造体の製造方法

Country Status (5)

Country Link
US (2) US8148234B2 (https=)
EP (1) EP1999783B1 (https=)
JP (1) JP5080555B2 (https=)
DE (2) DE102006012857A1 (https=)
WO (1) WO2007107461A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104118842B (zh) * 2014-07-02 2017-01-18 上海师范大学 碳化硅介孔阵列材料及其制备方法
US9805931B2 (en) * 2015-08-28 2017-10-31 Varian Semiconductor Equipment Associates, Inc. Liquid immersion doping
EP3141519B1 (fr) * 2015-09-08 2018-03-14 Nivarox-FAR S.A. Procédé de fabrication d'une pièce micromécanique horlogère

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132974A (en) 1975-05-14 1976-11-18 Nec Corp Semiconductor device
US4262295A (en) * 1978-01-30 1981-04-14 Hitachi, Ltd. Semiconductor device
JPS56130914A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6366929A (ja) * 1986-09-08 1988-03-25 Tokyo Ohka Kogyo Co Ltd アンチモン拡散用シリカ系被膜形成組成物
FR2655193B1 (fr) 1989-11-30 1994-09-23 Telemecanique Dispositif semiconducteur de puissance symetrique et son procede de fabrication.
JP3079575B2 (ja) * 1990-12-20 2000-08-21 株式会社日立製作所 半導体装置の製造方法
DE4440390A1 (de) * 1994-11-11 1996-05-15 Stuttgart Mikroelektronik Epitaxie-Verfahren zur Herstellung von Halbleiterschichtsystemen mit ultrakurzen, lateralen Dotierungsübergängen
WO1997040527A1 (de) 1996-04-22 1997-10-30 Siemens Aktiengesellschaft Verfahren zur herstellung eines dotierten gebietes in einem halbleitersubstrat
DE10032579B4 (de) 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
DE10127950B4 (de) 2001-06-08 2007-04-12 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
JP2004095645A (ja) * 2002-08-29 2004-03-25 Seiko Epson Corp 半導体装置および半導体装置の製造方法
DE102004036035B4 (de) 2003-12-16 2015-10-15 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor
JP2005259859A (ja) * 2004-03-10 2005-09-22 Toshiba Ceramics Co Ltd 拡散ウエハおよびその製造方法

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