JPS51132974A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51132974A
JPS51132974A JP5702975A JP5702975A JPS51132974A JP S51132974 A JPS51132974 A JP S51132974A JP 5702975 A JP5702975 A JP 5702975A JP 5702975 A JP5702975 A JP 5702975A JP S51132974 A JPS51132974 A JP S51132974A
Authority
JP
Japan
Prior art keywords
semiconductor device
regions
impurities
diffusion
utilizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5702975A
Other languages
Japanese (ja)
Inventor
Satoru Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5702975A priority Critical patent/JPS51132974A/en
Publication of JPS51132974A publication Critical patent/JPS51132974A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:Diffusion into deep regions such as emitter regions is made easy and heat treatment for a long time at a high temperature is omitted to minimize crystal defects by utilizing the fast diffusing speed of impurities in porous materials.
JP5702975A 1975-05-14 1975-05-14 Semiconductor device Pending JPS51132974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5702975A JPS51132974A (en) 1975-05-14 1975-05-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5702975A JPS51132974A (en) 1975-05-14 1975-05-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51132974A true JPS51132974A (en) 1976-11-18

Family

ID=13043999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5702975A Pending JPS51132974A (en) 1975-05-14 1975-05-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51132974A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007107461A1 (en) * 2006-03-21 2007-09-27 Robert Bosch Gmbh Method for fabricating a semiconductor structure, and corresponding semiconductor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007107461A1 (en) * 2006-03-21 2007-09-27 Robert Bosch Gmbh Method for fabricating a semiconductor structure, and corresponding semiconductor structure
US8148234B2 (en) 2006-03-21 2012-04-03 Robert Bosch Gmbh Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure

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