JPS5256857A - Production of vapor phase growing multilayer film having high impurity concentration thin layer region - Google Patents
Production of vapor phase growing multilayer film having high impurity concentration thin layer regionInfo
- Publication number
- JPS5256857A JPS5256857A JP13352375A JP13352375A JPS5256857A JP S5256857 A JPS5256857 A JP S5256857A JP 13352375 A JP13352375 A JP 13352375A JP 13352375 A JP13352375 A JP 13352375A JP S5256857 A JPS5256857 A JP S5256857A
- Authority
- JP
- Japan
- Prior art keywords
- thin layer
- multilayer film
- vapor phase
- impurity concentration
- layer region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To obtain ideal vapor phase growing multilayer film haing high impurity concentration thin layer region by mixing impurity gas in the carrier gas with pulsed opening and shutting.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13352375A JPS5838929B2 (en) | 1975-11-05 | 1975-11-05 | It's hard to see how it's going to turn out. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13352375A JPS5838929B2 (en) | 1975-11-05 | 1975-11-05 | It's hard to see how it's going to turn out. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5256857A true JPS5256857A (en) | 1977-05-10 |
JPS5838929B2 JPS5838929B2 (en) | 1983-08-26 |
Family
ID=15106769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13352375A Expired JPS5838929B2 (en) | 1975-11-05 | 1975-11-05 | It's hard to see how it's going to turn out. |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5838929B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222875A (en) * | 2001-01-25 | 2002-08-09 | Sony Corp | Non-volatile semiconductor memory device and method of manufacturing the same |
-
1975
- 1975-11-05 JP JP13352375A patent/JPS5838929B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222875A (en) * | 2001-01-25 | 2002-08-09 | Sony Corp | Non-volatile semiconductor memory device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5838929B2 (en) | 1983-08-26 |
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