DE102005038414A1 - Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht - Google Patents

Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht Download PDF

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Publication number
DE102005038414A1
DE102005038414A1 DE102005038414A DE102005038414A DE102005038414A1 DE 102005038414 A1 DE102005038414 A1 DE 102005038414A1 DE 102005038414 A DE102005038414 A DE 102005038414A DE 102005038414 A DE102005038414 A DE 102005038414A DE 102005038414 A1 DE102005038414 A1 DE 102005038414A1
Authority
DE
Germany
Prior art keywords
etching
layers
solutions
copper
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102005038414A
Other languages
German (de)
English (en)
Inventor
Martin FLÜGGE
Raimund Mellies
Thomas Goelzenleuchter
Marianne Schwager
Ruediger Oesten
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Priority to DE102005038414A priority Critical patent/DE102005038414A1/de
Priority to KR1020087003474A priority patent/KR101339492B1/ko
Priority to US12/063,033 priority patent/US8652972B2/en
Priority to CN2006800285160A priority patent/CN101238242B/zh
Priority to JP2008525563A priority patent/JP5101505B2/ja
Priority to EP06764305.6A priority patent/EP1917381B1/de
Priority to PCT/EP2006/065104 priority patent/WO2007020206A1/de
Priority to TW095129626A priority patent/TWI424091B/zh
Publication of DE102005038414A1 publication Critical patent/DE102005038414A1/de
Priority to IL188939A priority patent/IL188939A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/037—Stabilisation by additives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE102005038414A 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht Withdrawn DE102005038414A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102005038414A DE102005038414A1 (de) 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
KR1020087003474A KR101339492B1 (ko) 2005-08-12 2006-08-07 Ｃｕ 및 Ｃｕ/Ｎｉ 층에 사용하는 안정화된 에칭액
US12/063,033 US8652972B2 (en) 2005-08-12 2006-08-07 Stabilized etching solutions for CU and CU/NI layers
CN2006800285160A CN101238242B (zh) 2005-08-12 2006-08-07 用于铜和铜/镍层的稳定化的蚀刻溶液
JP2008525563A JP5101505B2 (ja) 2005-08-12 2006-08-07 Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液
EP06764305.6A EP1917381B1 (de) 2005-08-12 2006-08-07 Stabilisierte ätzlösungen für cu- und cu/ni-schichten
PCT/EP2006/065104 WO2007020206A1 (de) 2005-08-12 2006-08-07 Stabilisierte ätzlösungen für cu- und cu/ni-schichten
TW095129626A TWI424091B (zh) 2005-08-12 2006-08-11 用於銅及銅／鎳層之穩定蝕刻溶液
IL188939A IL188939A (en) 2005-08-12 2008-01-22 Engraving solutions are stabilized for the cu and cu / ni layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005038414A DE102005038414A1 (de) 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht

Publications (1)

Publication Number Publication Date
DE102005038414A1 true DE102005038414A1 (de) 2007-02-15

Family

ID=37113846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005038414A Withdrawn DE102005038414A1 (de) 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht

Country Status (9)

Country Link
US (1) US8652972B2 (https=)
EP (1) EP1917381B1 (https=)
JP (1) JP5101505B2 (https=)
KR (1) KR101339492B1 (https=)
CN (1) CN101238242B (https=)
DE (1) DE102005038414A1 (https=)
IL (1) IL188939A (https=)
TW (1) TWI424091B (https=)
WO (1) WO2007020206A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2515326A4 (en) * 2009-12-15 2013-07-24 Mitsubishi Gas Chemical Co ABSORBENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT THEREWITH

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EP2518759B1 (en) * 2009-12-25 2017-06-21 Mitsubishi Gas Chemical Company, Inc. Method for manufacturing semiconductor device using an etchant
KR101825493B1 (ko) 2010-04-20 2018-02-06 삼성디스플레이 주식회사 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법
CN102230178B (zh) * 2011-04-29 2012-09-05 西安东旺精细化学有限公司 镍或镍/铜合金的蚀刻液组合物
KR101812085B1 (ko) * 2013-05-02 2017-12-27 후지필름 가부시키가이샤 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법
CN110147008B (zh) * 2013-07-03 2022-03-22 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
CN104513982B (zh) * 2013-09-27 2019-01-22 东友精细化工有限公司 用于液晶显示器的阵列基板的制造方法
JP6657770B2 (ja) * 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
KR20160120891A (ko) 2015-04-09 2016-10-19 삼성전자주식회사 반도체 장치
KR102479444B1 (ko) * 2015-12-30 2022-12-21 삼영순화(주) 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법
WO2017188108A1 (ja) * 2016-04-27 2017-11-02 三洋化成工業株式会社 エッチング液及び電子基板の製造方法
US10316414B2 (en) * 2016-06-08 2019-06-11 United Technologies Corporation Removing material with nitric acid and hydrogen peroxide solution
CN106757029A (zh) * 2017-02-08 2017-05-31 昆山艾森半导体材料有限公司 一种侧蚀小的铜蚀刻液
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
WO2019045129A1 (ko) * 2017-08-29 2019-03-07 (주)예스바이오골드 치과용 지르코니아 세라믹의 표면 에칭제 조성물 및 이를 이용한 치아수복물의 제조방법
WO2019135965A1 (en) * 2018-01-08 2019-07-11 Arch Chemicals, Inc. Water treatment composition
CN111519190B (zh) * 2020-05-27 2022-03-18 湖北兴福电子材料有限公司 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法
JP7806697B2 (ja) 2020-09-29 2026-01-27 三菱瓦斯化学株式会社 半導体基板洗浄用組成物及び洗浄方法
CN112680229A (zh) * 2021-01-29 2021-04-20 深圳市百通达科技有限公司 一种湿电子化学的硅基材料蚀刻液及其制备方法
CN116005158A (zh) * 2022-12-29 2023-04-25 江阴润玛电子材料股份有限公司 一种集成电路用铜镍腐蚀液及其制备方法
CN120857364B (zh) * 2025-07-30 2026-03-24 江苏富乐华功率半导体研究院有限公司 一种减少amb覆铜陶瓷基板焊料蚀刻铜残留的方法

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US4059678A (en) 1973-02-02 1977-11-22 Fmc Corporation Stabilization of iron-containing acidic hydrogen peroxide solutions
JPS50140333A (https=) 1974-04-27 1975-11-11
SU929738A1 (ru) 1980-10-27 1982-05-23 Предприятие П/Я М-5191 Раствор дл размерного травлени молибдена и меди
JPS6058795B2 (ja) 1980-11-25 1985-12-21 シャープ株式会社 Ｎｉ薄膜エツチング方法
SU950799A1 (ru) 1980-12-22 1982-08-15 Предприятие П/Я Г-4377 Раствор дл травлени металлов
GB8925376D0 (en) 1989-11-09 1989-12-28 Interox Chemicals Ltd Stabilisation of concentrated hydrogen peroxide solutions
JP2884935B2 (ja) * 1992-08-17 1999-04-19 日立化成工業株式会社 ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法
JPH06322559A (ja) * 1993-05-07 1994-11-22 Okuno Chem Ind Co Ltd ニッケル又はニッケル合金皮膜用剥離剤
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JP2004043895A (ja) 2002-07-12 2004-02-12 Mitsubishi Chemicals Corp 銅エッチング液

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2515326A4 (en) * 2009-12-15 2013-07-24 Mitsubishi Gas Chemical Co ABSORBENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT THEREWITH
US8900478B2 (en) 2009-12-15 2014-12-02 Mitsubishi Gas Chemical Company, Inc. Etchant and method for manufacturing semiconductor device using same

Also Published As

Publication number Publication date
EP1917381A1 (de) 2008-05-07
JP5101505B2 (ja) 2012-12-19
IL188939A (en) 2013-12-31
EP1917381B1 (de) 2013-04-10
US20100304573A1 (en) 2010-12-02
TW200718806A (en) 2007-05-16
KR101339492B1 (ko) 2013-12-11
WO2007020206A1 (de) 2007-02-22
JP2009505388A (ja) 2009-02-05
IL188939A0 (en) 2008-04-13
CN101238242B (zh) 2011-05-04
US8652972B2 (en) 2014-02-18
KR20080042820A (ko) 2008-05-15
TWI424091B (zh) 2014-01-21
CN101238242A (zh) 2008-08-06

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: BASF SE, 67063 LUDWIGSHAFEN, DE

8139 Disposal/non-payment of the annual fee