JP5101505B2 - Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液 - Google Patents

Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液 Download PDF

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Publication number
JP5101505B2
JP5101505B2 JP2008525563A JP2008525563A JP5101505B2 JP 5101505 B2 JP5101505 B2 JP 5101505B2 JP 2008525563 A JP2008525563 A JP 2008525563A JP 2008525563 A JP2008525563 A JP 2008525563A JP 5101505 B2 JP5101505 B2 JP 5101505B2
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Japan
Prior art keywords
etching
etching solution
amount
total composition
hydrogen peroxide
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JP2008525563A
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Japanese (ja)
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JP2009505388A5 (https=
JP2009505388A (ja
Inventor
フリュッゲ マルチン
メリース ライムント
ゲルツェンロイヒター トーマス
シュヴァーガー マリアンヌ
オエステン リューディガー
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BASF SE
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BASF SE
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/037—Stabilisation by additives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2008525563A 2005-08-12 2006-08-07 Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液 Expired - Fee Related JP5101505B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005038414.5 2005-08-12
DE102005038414A DE102005038414A1 (de) 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
PCT/EP2006/065104 WO2007020206A1 (de) 2005-08-12 2006-08-07 Stabilisierte ätzlösungen für cu- und cu/ni-schichten

Publications (3)

Publication Number Publication Date
JP2009505388A JP2009505388A (ja) 2009-02-05
JP2009505388A5 JP2009505388A5 (https=) 2009-06-04
JP5101505B2 true JP5101505B2 (ja) 2012-12-19

Family

ID=37113846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008525563A Expired - Fee Related JP5101505B2 (ja) 2005-08-12 2006-08-07 Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液

Country Status (9)

Country Link
US (1) US8652972B2 (https=)
EP (1) EP1917381B1 (https=)
JP (1) JP5101505B2 (https=)
KR (1) KR101339492B1 (https=)
CN (1) CN101238242B (https=)
DE (1) DE102005038414A1 (https=)
IL (1) IL188939A (https=)
TW (1) TWI424091B (https=)
WO (1) WO2007020206A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2515326B1 (en) * 2009-12-15 2018-09-26 Mitsubishi Gas Chemical Company, Inc. Method for manufacturing semiconductor device using an etchant
EP2518759B1 (en) * 2009-12-25 2017-06-21 Mitsubishi Gas Chemical Company, Inc. Method for manufacturing semiconductor device using an etchant
KR101825493B1 (ko) 2010-04-20 2018-02-06 삼성디스플레이 주식회사 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법
CN102230178B (zh) * 2011-04-29 2012-09-05 西安东旺精细化学有限公司 镍或镍/铜合金的蚀刻液组合物
KR101812085B1 (ko) * 2013-05-02 2017-12-27 후지필름 가부시키가이샤 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법
CN110147008B (zh) * 2013-07-03 2022-03-22 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
CN104513982B (zh) * 2013-09-27 2019-01-22 东友精细化工有限公司 用于液晶显示器的阵列基板的制造方法
JP6657770B2 (ja) * 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
KR20160120891A (ko) 2015-04-09 2016-10-19 삼성전자주식회사 반도체 장치
KR102479444B1 (ko) * 2015-12-30 2022-12-21 삼영순화(주) 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법
WO2017188108A1 (ja) * 2016-04-27 2017-11-02 三洋化成工業株式会社 エッチング液及び電子基板の製造方法
US10316414B2 (en) * 2016-06-08 2019-06-11 United Technologies Corporation Removing material with nitric acid and hydrogen peroxide solution
CN106757029A (zh) * 2017-02-08 2017-05-31 昆山艾森半导体材料有限公司 一种侧蚀小的铜蚀刻液
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
WO2019045129A1 (ko) * 2017-08-29 2019-03-07 (주)예스바이오골드 치과용 지르코니아 세라믹의 표면 에칭제 조성물 및 이를 이용한 치아수복물의 제조방법
WO2019135965A1 (en) * 2018-01-08 2019-07-11 Arch Chemicals, Inc. Water treatment composition
CN111519190B (zh) * 2020-05-27 2022-03-18 湖北兴福电子材料有限公司 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法
JP7806697B2 (ja) 2020-09-29 2026-01-27 三菱瓦斯化学株式会社 半導体基板洗浄用組成物及び洗浄方法
CN112680229A (zh) * 2021-01-29 2021-04-20 深圳市百通达科技有限公司 一种湿电子化学的硅基材料蚀刻液及其制备方法
CN116005158A (zh) * 2022-12-29 2023-04-25 江阴润玛电子材料股份有限公司 一种集成电路用铜镍腐蚀液及其制备方法
CN120857364B (zh) * 2025-07-30 2026-03-24 江苏富乐华功率半导体研究院有限公司 一种减少amb覆铜陶瓷基板焊料蚀刻铜残留的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE663291A (https=) * 1964-05-04
JPS5419381B2 (https=) 1972-04-13 1979-07-14
US4059678A (en) 1973-02-02 1977-11-22 Fmc Corporation Stabilization of iron-containing acidic hydrogen peroxide solutions
JPS50140333A (https=) 1974-04-27 1975-11-11
SU929738A1 (ru) 1980-10-27 1982-05-23 Предприятие П/Я М-5191 Раствор дл размерного травлени молибдена и меди
JPS6058795B2 (ja) 1980-11-25 1985-12-21 シャープ株式会社 Ｎｉ薄膜エツチング方法
SU950799A1 (ru) 1980-12-22 1982-08-15 Предприятие П/Я Г-4377 Раствор дл травлени металлов
GB8925376D0 (en) 1989-11-09 1989-12-28 Interox Chemicals Ltd Stabilisation of concentrated hydrogen peroxide solutions
JP2884935B2 (ja) * 1992-08-17 1999-04-19 日立化成工業株式会社 ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法
JPH06322559A (ja) * 1993-05-07 1994-11-22 Okuno Chem Ind Co Ltd ニッケル又はニッケル合金皮膜用剥離剤
JPH0718472A (ja) * 1993-07-06 1995-01-20 Ebara Yuujiraito Kk 銅・銅合金材のための浸漬エッチング液
JP3711565B2 (ja) 1994-02-24 2005-11-02 日立化成工業株式会社 エッチング液中の塩素イオンの除去方法並びにこのエッチング液を用いて配線板を製造する方法
JPH08311663A (ja) 1995-05-18 1996-11-26 Merutetsukusu Kk ニッケル被膜またはニッケル合金被膜の剥離液
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6444140B2 (en) * 1999-03-17 2002-09-03 Morton International Inc. Micro-etch solution for producing metal surface topography
JP2004043895A (ja) 2002-07-12 2004-02-12 Mitsubishi Chemicals Corp 銅エッチング液

Also Published As

Publication number Publication date
EP1917381A1 (de) 2008-05-07
IL188939A (en) 2013-12-31
EP1917381B1 (de) 2013-04-10
US20100304573A1 (en) 2010-12-02
TW200718806A (en) 2007-05-16
KR101339492B1 (ko) 2013-12-11
DE102005038414A1 (de) 2007-02-15
WO2007020206A1 (de) 2007-02-22
JP2009505388A (ja) 2009-02-05
IL188939A0 (en) 2008-04-13
CN101238242B (zh) 2011-05-04
US8652972B2 (en) 2014-02-18
KR20080042820A (ko) 2008-05-15
TWI424091B (zh) 2014-01-21
CN101238242A (zh) 2008-08-06

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