JP2009505388A5 - - Google Patents
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- Publication number
- JP2009505388A5 JP2009505388A5 JP2008525563A JP2008525563A JP2009505388A5 JP 2009505388 A5 JP2009505388 A5 JP 2009505388A5 JP 2008525563 A JP2008525563 A JP 2008525563A JP 2008525563 A JP2008525563 A JP 2008525563A JP 2009505388 A5 JP2009505388 A5 JP 2009505388A5
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- amount
- etching
- mass
- total composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 9
- 239000000203 mixture Substances 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000005516 engineering process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000000080 wetting agent Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005038414.5 | 2005-08-12 | ||
| DE102005038414A DE102005038414A1 (de) | 2005-08-12 | 2005-08-12 | Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht |
| PCT/EP2006/065104 WO2007020206A1 (de) | 2005-08-12 | 2006-08-07 | Stabilisierte ätzlösungen für cu- und cu/ni-schichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009505388A JP2009505388A (ja) | 2009-02-05 |
| JP2009505388A5 true JP2009505388A5 (https=) | 2009-06-04 |
| JP5101505B2 JP5101505B2 (ja) | 2012-12-19 |
Family
ID=37113846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008525563A Expired - Fee Related JP5101505B2 (ja) | 2005-08-12 | 2006-08-07 | Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8652972B2 (https=) |
| EP (1) | EP1917381B1 (https=) |
| JP (1) | JP5101505B2 (https=) |
| KR (1) | KR101339492B1 (https=) |
| CN (1) | CN101238242B (https=) |
| DE (1) | DE102005038414A1 (https=) |
| IL (1) | IL188939A (https=) |
| TW (1) | TWI424091B (https=) |
| WO (1) | WO2007020206A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2515326B1 (en) * | 2009-12-15 | 2018-09-26 | Mitsubishi Gas Chemical Company, Inc. | Method for manufacturing semiconductor device using an etchant |
| EP2518759B1 (en) * | 2009-12-25 | 2017-06-21 | Mitsubishi Gas Chemical Company, Inc. | Method for manufacturing semiconductor device using an etchant |
| KR101825493B1 (ko) | 2010-04-20 | 2018-02-06 | 삼성디스플레이 주식회사 | 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 |
| CN102230178B (zh) * | 2011-04-29 | 2012-09-05 | 西安东旺精细化学有限公司 | 镍或镍/铜合金的蚀刻液组合物 |
| KR101812085B1 (ko) * | 2013-05-02 | 2017-12-27 | 후지필름 가부시키가이샤 | 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법 |
| CN110147008B (zh) * | 2013-07-03 | 2022-03-22 | 东友精细化工有限公司 | 制造液晶显示器用阵列基板的方法 |
| CN104513982B (zh) * | 2013-09-27 | 2019-01-22 | 东友精细化工有限公司 | 用于液晶显示器的阵列基板的制造方法 |
| JP6657770B2 (ja) * | 2014-11-27 | 2020-03-04 | 三菱瓦斯化学株式会社 | 液体組成物およびこれを用いたエッチング方法 |
| KR20160120891A (ko) | 2015-04-09 | 2016-10-19 | 삼성전자주식회사 | 반도체 장치 |
| KR102479444B1 (ko) * | 2015-12-30 | 2022-12-21 | 삼영순화(주) | 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| WO2017188108A1 (ja) * | 2016-04-27 | 2017-11-02 | 三洋化成工業株式会社 | エッチング液及び電子基板の製造方法 |
| US10316414B2 (en) * | 2016-06-08 | 2019-06-11 | United Technologies Corporation | Removing material with nitric acid and hydrogen peroxide solution |
| CN106757029A (zh) * | 2017-02-08 | 2017-05-31 | 昆山艾森半导体材料有限公司 | 一种侧蚀小的铜蚀刻液 |
| CN108930037B (zh) * | 2017-05-22 | 2021-02-26 | 东友精细化工有限公司 | 金属膜蚀刻液组合物及利用其的导电图案形成方法 |
| WO2019045129A1 (ko) * | 2017-08-29 | 2019-03-07 | (주)예스바이오골드 | 치과용 지르코니아 세라믹의 표면 에칭제 조성물 및 이를 이용한 치아수복물의 제조방법 |
| WO2019135965A1 (en) * | 2018-01-08 | 2019-07-11 | Arch Chemicals, Inc. | Water treatment composition |
| CN111519190B (zh) * | 2020-05-27 | 2022-03-18 | 湖北兴福电子材料有限公司 | 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法 |
| JP7806697B2 (ja) | 2020-09-29 | 2026-01-27 | 三菱瓦斯化学株式会社 | 半導体基板洗浄用組成物及び洗浄方法 |
| CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
| CN116005158A (zh) * | 2022-12-29 | 2023-04-25 | 江阴润玛电子材料股份有限公司 | 一种集成电路用铜镍腐蚀液及其制备方法 |
| CN120857364B (zh) * | 2025-07-30 | 2026-03-24 | 江苏富乐华功率半导体研究院有限公司 | 一种减少amb覆铜陶瓷基板焊料蚀刻铜残留的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE663291A (https=) * | 1964-05-04 | |||
| JPS5419381B2 (https=) | 1972-04-13 | 1979-07-14 | ||
| US4059678A (en) | 1973-02-02 | 1977-11-22 | Fmc Corporation | Stabilization of iron-containing acidic hydrogen peroxide solutions |
| JPS50140333A (https=) | 1974-04-27 | 1975-11-11 | ||
| SU929738A1 (ru) | 1980-10-27 | 1982-05-23 | Предприятие П/Я М-5191 | Раствор дл размерного травлени молибдена и меди |
| JPS6058795B2 (ja) | 1980-11-25 | 1985-12-21 | シャープ株式会社 | Ｎｉ薄膜エツチング方法 |
| SU950799A1 (ru) | 1980-12-22 | 1982-08-15 | Предприятие П/Я Г-4377 | Раствор дл травлени металлов |
| GB8925376D0 (en) | 1989-11-09 | 1989-12-28 | Interox Chemicals Ltd | Stabilisation of concentrated hydrogen peroxide solutions |
| JP2884935B2 (ja) * | 1992-08-17 | 1999-04-19 | 日立化成工業株式会社 | ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法 |
| JPH06322559A (ja) * | 1993-05-07 | 1994-11-22 | Okuno Chem Ind Co Ltd | ニッケル又はニッケル合金皮膜用剥離剤 |
| JPH0718472A (ja) * | 1993-07-06 | 1995-01-20 | Ebara Yuujiraito Kk | 銅・銅合金材のための浸漬エッチング液 |
| JP3711565B2 (ja) | 1994-02-24 | 2005-11-02 | 日立化成工業株式会社 | エッチング液中の塩素イオンの除去方法並びにこのエッチング液を用いて配線板を製造する方法 |
| JPH08311663A (ja) | 1995-05-18 | 1996-11-26 | Merutetsukusu Kk | ニッケル被膜またはニッケル合金被膜の剥離液 |
| US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| US6444140B2 (en) * | 1999-03-17 | 2002-09-03 | Morton International Inc. | Micro-etch solution for producing metal surface topography |
| JP2004043895A (ja) | 2002-07-12 | 2004-02-12 | Mitsubishi Chemicals Corp | 銅エッチング液 |
-
2005
- 2005-08-12 DE DE102005038414A patent/DE102005038414A1/de not_active Withdrawn
-
2006
- 2006-08-07 WO PCT/EP2006/065104 patent/WO2007020206A1/de not_active Ceased
- 2006-08-07 CN CN2006800285160A patent/CN101238242B/zh active Active
- 2006-08-07 EP EP06764305.6A patent/EP1917381B1/de active Active
- 2006-08-07 US US12/063,033 patent/US8652972B2/en not_active Expired - Fee Related
- 2006-08-07 KR KR1020087003474A patent/KR101339492B1/ko not_active Expired - Fee Related
- 2006-08-07 JP JP2008525563A patent/JP5101505B2/ja not_active Expired - Fee Related
- 2006-08-11 TW TW095129626A patent/TWI424091B/zh active
-
2008
- 2008-01-22 IL IL188939A patent/IL188939A/en active IP Right Grant
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