JP2018145047A - 金属−セラミックス回路基板の製造方法 - Google Patents
金属−セラミックス回路基板の製造方法 Download PDFInfo
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Abstract
【解決手段】セラミックス基板10の少なくとも一方の面に、銀を含む活性金属含有ろう材12を介して銅板14を接合した後、銅板14と活性金属含有ろう材12の不要部分を除去し、その後、化学研磨により銅板14の側面部から活性金属含有ろう材12がはみ出すように銅板14の不要部分を除去し、この化学研磨によって銅板14の表面に付着した銀層18を除去する金属−セラミックス回路基板の製造方法。
【選択図】図1G
Description
34mm×34mm×0.6mmの大きさの窒化アルミニウム基板の両面に、90質量%の銀と8質量%の銅と(活性金属成分としての)2質量%のチタン(Ag:Cu:Ti=90:8:2)とをビヒクルに加えて混練した活性金属含有ろう材を厚さ20μmになるようにスクリーン印刷し、その上に34mm×34mm×0.25mmの無酸素銅板を配置し、真空中で850℃に加熱して窒化アルミニウム基板の両面に銅板を接合した。
活性金属含有ろう材として、83質量%の銀と10質量%の銅と5質量%の錫と(活性金属成分としての)2質量%のチタンを含む活性金属含有ろう材(Ag:Cu:Sn:Ti=83:10:5:2)を使用し、この活性金属含有ろう材を厚さ10μmになるようにスクリーン印刷した以外は、実施例1と同様の方法により、金属−セラミックス回路基板を得た。
活性金属含有ろう材として、83質量%の銀と10質量%の銅と5質量%の錫と(活性金属成分としての)2質量%のチタンを含む活性金属含有ろう材(Ag:Cu:Sn:Ti=83:10:5:2)を使用し、この活性金属含有ろう材を厚さ15μmになるようにスクリーン印刷した以外は、実施例1と同様の方法により、金属−セラミックス回路基板を得た。
銀除去液による銀の除去を行わなかった以外は、実施例1と同様の方法により、金属−セラミックス回路基板を得た。
銀除去液による銀の除去を行わなかった以外は、実施例2と同様の方法により、金属−セラミックス回路基板を得た。
12 活性金属含有ろう材
12a 反応生成物層
12b 金属層
14 銅板
16 レジスト
18 銀層
20 めっき皮膜
Claims (8)
- セラミックス基板の少なくとも一方の面に、銀を含む活性金属含有ろう材を介して銅板を接合した後、銅板と活性金属含有ろう材の不要部分を除去し、その後、化学研磨により銅板の側面部から活性金属含有ろう材がはみ出すように銅板の不要部分を除去し、この化学研磨によって銅板の表面に付着した銀を除去することを特徴とする、金属−セラミックス回路基板の製造方法。
- 前記活性金属含有ろう材が銀と銅と活性金属からなることを特徴とする、請求項1に記載の金属−セラミックス回路基板の製造方法。
- 前記活性金属含有ろう材が錫を含むことを特徴とする、請求項2に記載の金属−セラミックス回路基板の製造方法。
- 前記活性金属含有ろう材中の銀の含有量が70質量%以上であることを特徴とする、請求項2または3に記載の金属−セラミックス回路基板の製造方法。
- 前記銀の除去後に、銅板と活性金属含有ろう材の露出面にめっき皮膜を形成することを特徴とする、請求項1乃至4のいずれかに記載の金属−セラミックス回路基板の製造方法。
- 前記めっき皮膜が無電解Ni合金めっきにより形成されることを特徴とする、請求項5に記載の金属−セラミックス回路基板の製造方法。
- 前記化学研磨が、銅の溶解速度が銀の溶解速度の10倍以上の化学研磨液により行われることを特徴とする、請求項1乃至6のいずれかに記載の金属−セラミックス回路基板の製造方法。
- 前記銀の除去が、銀の溶解速度が銅の溶解速度の10倍以上の銀除去液により行われることを特徴とする、請求項1乃至7のいずれかに記載の金属−セラミックス回路基板の製造方法。
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