CN108541149A - 金属/陶瓷电路板的制造方法 - Google Patents
金属/陶瓷电路板的制造方法 Download PDFInfo
- Publication number
- CN108541149A CN108541149A CN201810179137.6A CN201810179137A CN108541149A CN 108541149 A CN108541149 A CN 108541149A CN 201810179137 A CN201810179137 A CN 201810179137A CN 108541149 A CN108541149 A CN 108541149A
- Authority
- CN
- China
- Prior art keywords
- metal
- circuit board
- solder
- silver
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 151
- 239000002184 metal Substances 0.000 title claims abstract description 148
- 239000000919 ceramic Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000010949 copper Substances 0.000 claims abstract description 110
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052802 copper Inorganic materials 0.000 claims abstract description 107
- 229910000679 solder Inorganic materials 0.000 claims abstract description 88
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052709 silver Inorganic materials 0.000 claims abstract description 39
- 239000004332 silver Substances 0.000 claims abstract description 39
- 239000000126 substance Substances 0.000 claims abstract description 36
- 238000005498 polishing Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004090 dissolution Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 25
- 238000013508 migration Methods 0.000 description 18
- 230000005012 migration Effects 0.000 description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 16
- 229910000831 Steel Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000010944 silver (metal) Substances 0.000 description 6
- 229910017083 AlN Inorganic materials 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 4
- 229910018536 Ni—P Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010946 fine silver Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- YAPQBXQYLJRXSA-UHFFFAOYSA-N theobromine Chemical compound CN1C(=O)NC(=O)C2=C1N=CN2C YAPQBXQYLJRXSA-UHFFFAOYSA-N 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 241000040710 Chela Species 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- KRUCNVFZSLHJKU-UHFFFAOYSA-N [Si].OC(O)=O Chemical compound [Si].OC(O)=O KRUCNVFZSLHJKU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013066 combination product Substances 0.000 description 1
- 229940127555 combination product Drugs 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229960004559 theobromine Drugs 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/127—The active component for bonding being a refractory metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
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Abstract
在利用包含银的含活性金属的钎料(12)将铜板(14)结合到陶瓷衬底(10)的至少一个表面之后,除去铜板(14)和含活性金属的钎料(12)的不需要部分,然后,通过化学抛光除去铜板(14)的不需要部分,以使含活性金属的钎料(12)从铜板(14)的侧面部分突出,然后,通过化学抛光除去附着于铜板(14)的表面的银层(18)。
Description
发明背景
发明领域
本发明一般涉及金属/陶瓷电路板的制造方法。更具体而言,本发明涉及金属/陶瓷电路板的制造方法,其中,金属板通过含活性金属的钎料结合于陶瓷衬底。
现有技术说明
通常,电源模块被用于控制电动汽车、有轨电车和机床的强电流。作为用于这种电源模块的绝缘衬底,使用金属/陶瓷电路板,其中在金属电路板的需要焊接芯片零件和端子的部分上等处进行电镀,金属电路板被接合到陶瓷衬底的一个表面。
在这种金属/陶瓷电路板中,基于陶瓷衬底和金属电路板之间由于结合后的热冲击而引起的基于热膨胀差异而产生热应力,由于该热应力容易在陶瓷衬底中形成裂纹。
作为缓和这种热应力的方法,已知有使金属电路板的周边部分(沿面部分)变薄的方法,例如用于在金属电路板的周边部分上形成台阶结构或凸缘(fillet)(用于将金属电路板结合到陶瓷衬底的钎料的突出部分)的方法(参见例如日本专利公开号10-125821、2001-332854和2004-307307)。
但是,如果电源模块中搭载有金属/陶瓷电路板,且该金属/陶瓷电路板中用于将金属电路板(例如铜电路板)结合到陶瓷衬底的含活性金属的钎料具有突出部分(凸缘),则存在这样的可能性:造成在陶瓷衬底上的金属电路板的电路图案之间的部分发生含活性金属的钎料(当使用含活性金属、银和铜的钎料时,为银或铜)的金属迁移等,并造成绝缘失效。
作为防止这种迁移的方法,已知有在从金属板的边缘部突出的钎料的突出部的表面实施无电Ni-P镀敷的方法(参照例如日本专利公开第2006-228918号)。
但是,即使在含活性金属的钎料的突出部分上实施Ni-P镀敷,也不能充分抑制当将金属/陶瓷电路板安装在电源模块中时由于组装过程中的热处理(例如焊接)和/或基于绝缘凝胶的涂布而发生的迁移。
发明内容
因此,本发明的目的是消除上述问题,并且提供一种金属/陶瓷电路板的制造方法,该方法能够充分抑制在金属/陶瓷电路板的制造方法中发生迁移,其中金属板通过含活性金属的钎料结合于陶瓷衬底。
为了达到上述目的及其他目的,发明人进行了认真研究,发现如果通过包括下述步骤的方法制造金属/陶瓷电路板,则可以制造一种能充分抑制在金属/陶瓷电路板的制造方法中发生迁移的金属/陶瓷电路板,其中,金属板通过含活性金属的钎料结合于陶瓷衬底,上述方法包括:利用包含银的含活性金属的钎料将铜板结合至陶瓷衬底的至少一个表面;除去所述铜板和含活性金属的钎料的不需要部分;然后通过化学抛光除去所述铜板的不需要部分,从而使所述含活性金属的钎料从所述铜板的侧面部分突出;以及通过化学抛光除去附着于所述铜板表面的银。
根据本发明,提供一种金属/陶瓷电路板的制造方法,该方法包括以下步骤:利用包含银的含活性金属的钎料将铜板结合至陶瓷衬底的至少一个表面;除去所述铜板和含活性金属的钎料的不需要部分;然后通过化学抛光除去所述铜板的不需要部分,从而使所述含活性金属的钎料从所述铜板的侧面部分突出;以及通过化学抛光除去附着于所述铜板表面的银。
在上述制造金属/陶瓷电路板的方法中,上述含活性金属的钎料优选包含银、铜和活性金属。上述含活性金属的钎料可以包含锡。上述含活性金属的钎料中的银含量优选为70重量%以上。在除去附着于上述铜板的表面上的银后,优选在上述铜板和含活性金属的钎料的暴露表面上形成镀膜。优选通过无电镍合金镀敷来形成上述镀膜。优选利用化学抛光溶液进行上述化学抛光,上述化学抛光溶液的铜溶解速率为银溶解速率的10倍以上。优选利用除银溶液进行银的除去,上述除银溶液的银溶解速率为铜溶解速率的10倍以上。
根据本发明,可以制造能充分抑制在金属/陶瓷电路板的制造方法中发生迁移的金属/陶瓷电路板,其中,金属板通过含活性金属的钎料结合在陶瓷衬板上。
附图的简要说明
本发明可通过下面给出的详细描述和本发明的优选实施方式的附图来更充分地理解。然而,附图并不意图将本发明限制于特定实施方式,而是仅用于解释和理解。
在附图中:
图1A是表示在金属/陶瓷电路板的制造方法的优选实施方式中,在陶瓷衬底上印刷含活性金属的钎料的状态的剖视图;
图1B是表示在金属/陶瓷电路板的制造方法的优选实施方式中,金属板通过含活性金属的钎料而被结合在陶瓷衬底上的状态的剖视图;
图1C是表示在金属/陶瓷电路板的制造方法的优选实施方式中,在金属板的表面上涂布具有所希望的电路图案的抗蚀剂的状态的剖视图;
图1D是表示在金属/陶瓷电路板的制造方法的优选实施方式中,将金属板的不需要部分蚀刻除去后的状态的剖视图;
图1E是表示在金属/陶瓷电路板的制造方法的优选实施方式中,从金属板除去抗蚀剂后的状态的剖视图;
图1F是表示在金属/陶瓷电路板的制造方法的优选实施方式中,将含活性金属的钎料的不需要部分除去后的状态的剖视图;
图1G是表示在金属/陶瓷电路板的制造方法的优选实施方式中,对金属板的表面进行化学抛光后,使银附着于金属板而形成银层的状态的剖视图;
图1H是表示在金属/陶瓷电路板的制造方法的优选实施方式中,从金属板的表面除去银层后的状态的剖视图;以及
图1I是表示在金属/陶瓷电路板的制造方法的优选实施方式中,形成镀膜的状态的剖视图。
优选实施方式的说明
在金属/陶瓷电路板的制造方法的优选实施方式中,在利用包含银的含活性金属的钎料将铜板结合至陶瓷衬底的至少一个表面后,除去铜板和含活性金属的钎料的不需要部分,然后通过化学抛光除去铜板的不需要部分,从而使含活性金属的钎料从铜板的侧面部分突出,以形成凸缘,接着,通过化学抛光(使用除银溶液)除去附着于铜板表面的银。
在上述金属/陶瓷电路板的制造方法中,陶瓷衬底可以是主要包含氧化铝、二氧化硅等氧化物的衬底,或者主要包含氮化铝、氮化硅、碳酸硅等非氧化物的衬底,并且衬底可具有约5mm至200mm×5mm至200mm的尺寸和0.25~3.0mm(优选0.3~1.0mm)的厚度。
含活性金属的钎料优选可以含有银、铜和活性金属作为金属元素。含活性金属的钎料可以含有相对于金属元素的总量为10%以下的锡。相对于含活性金属的钎料中的金属元素的总量,银的含量优选为70重量%以上,更优选为70~95重量%,最优选为75~93重量%。相对于含活性金属的钎料中的金属元素的总量,活性金属的含量优选为1~5重量%,更优选为1~3重量%。作为含活性金属的钎料的活性金属成分,可以使用选自钛、锆、铪及其氢化物中的至少一种。为了制造能够充分抑制迁移发生的金属/陶瓷电路板,含活性金属的钎料优选含有锡。
通过例如将铜板浸入含氯化铜或氯化铁的蚀刻液中,或者将蚀刻液喷射在铜板上,能进行铜板的不需要部分的除去。通过例如将钎料浸入含螯合物的化学溶液或氢氟酸化学溶液中,或者将化学溶液喷射在钎料上,能进行含活性金属的钎料的不需要部分的除去。
化学抛光优选通过将铜板浸入化学抛光溶液中或将化学抛光溶液喷射到铜板上来进行。化学抛光溶液的铜溶解速率优选为银溶解速率的10倍以上(更优选50倍以上)。作为这样的化学抛光溶液,可以使用包含硫酸、过氧化氢、且余量为水的化学抛光溶液,或者市售可得的用于铜的化学抛光溶液。化学抛光可以改善金属/陶瓷电路板的外观、引线结合能力、焊料润湿性等,并且可以通过形成具有宽度(含活性金属的钎料沿着陶瓷衬底从铜板的侧面突出的一段长度)的凸缘来改善金属/陶瓷电路板的耐热冲击性,上述宽度优选为5~100μm,更优选为10~50μm。形成为凸缘的含活性金属的钎料的突出部分的厚度优选为3~50μm,更优选为5~20μm。此外,化学抛光溶液的铜溶解速率与银溶解速率的比率(或银溶解速率与铜溶解速率的比率)可以通过在相同的条件(例如温度和时间)下将板浸入化学抛光溶液之后,由纯铜板(无氧铜板)和具有与纯铜板相同形状的纯银板的各自减少的量算出。
发现在化学抛光中使用主要溶解铜的化学抛光溶液,使得存在于含活性金属的钎料和铜板中的银由于铜溶解于溶液中而作为不溶的银存在而暴露,并以较弱的力附着到铜板的表面上以形成厚度约1微米的层,从而使金属/陶瓷电路板的耐迁移性变差。因此,在本发明的金属/陶瓷电路板的制造方法的优选实施方式中,为了充分抑制迁移的发生,除去附着于铜板表面的银。
附着在铜板上的银的除去优选通过将铜板浸渍在除银溶液中来进行。该除银溶液的银溶解速率优选为铜溶解速率的10倍以上,更优选为铜溶解速率的50倍~71倍(银溶解速率为2.5~3.0μm/分钟,相比之下铜溶解速率0.042~0.050μm/分钟)。作为这样的除银溶液,优选使用包含乙酸、过氧化氢、且余量为水的化学溶液,并且可以使用包含市售可得的镀银去除剂(例如佐佐木化学品有限公司生产的S-BACK AG-601)、过氧化氢、且余量为水的除银溶液。此外,除银溶液的铜溶解速率与银溶解速率的比率(或银溶解速率与铜溶解速率的比率)可以通过在相同的条件(例如温度和时间)下将板浸入除银溶液之后,由纯铜板(无氧铜板)和具有与纯铜板相同形状的纯银板的各自减少的量算出。
在除去银之后,优选在铜板和含活性金属的钎料的暴露表面上形成镀膜。镀膜优选为镀镍膜,并且优选通过无电镍合金镀敷而形成。作为形成镀膜的替代做法,可以进行防锈处理。
现在参照附图,以下将详细描述本发明的金属/陶瓷电路板的制造方法的优选实施方式。
如图1A和图1B所示,在将含活性金属的钎料12的糊料丝网印刷在陶瓷衬底10的两侧的每一侧上之后,将铜板14布置在含活性金属的钎料12上,并在基本上是真空或非氧化气氛中加热,然后进行冷却以结合陶瓷基板10两侧的铜板14。该结合使含活性金属的钎料12成为层(反应产物层)12a和层(金属层)12b,其中,上述层(反应产物层)12a主要由使含活性金属的钎料12的活性金属与陶瓷衬底10的陶瓷反应的反应产物形成,上述层(金属层)12b主要由含活性金属的钎料12的活性金属以外的金属形成。上述反应产物层12a是活性金属以外的金属的含量很低的层,上述金属层12b是活性金属以外的金属的含量很高的层。此外,可以通过电子探针微分析仪(EPMA)等容易地确认使含活性金属的钎料12成为上述反应产物层12a和上述金属层12b。但是,也存在反应产物层12a和金属层12b之间的边界不能通过EPMA确认的情况。
然后,如图1C所示,将具有所需电路图案的抗蚀剂16涂布在与陶瓷衬底10的两侧中的每一个结合的铜板14的表面上,如图1D所示,用氯化铜蚀刻溶液、氯化铁蚀刻溶液等去除铜板的不需要部分。然后,如图1E所示,除去抗蚀剂16。
然后,如图1F所示,用含有氢氟酸的水溶液或含有与活性金属形成络合物的化合物如乙二胺四乙酸(EDTA)的水溶液除去含活性金属的钎料12的不需要部分。
然后,将铜板14的表面化学抛光。然后,如图1G所示,形成从铜板14的侧面突出的凸缘,并且银附着到铜板14的表面以形成银层18。
然后,如图1H所示,用除银溶液除去粘附在铜板14的表面的银层18。接下来,如图1I所示,在铜板14和含活性金属的钎料12上形成镀膜20,得到具有凸缘(含活性金属的钎料的沿陶瓷衬底10的两侧的每一个延伸并从铜板14的侧面突出的部分)的金属/陶瓷电路板,上述凸缘具有预定的宽度。
以下,详细描述本发明的金属/陶瓷电路板的制造方法的实施例。
实施例1
通过在载料中添加90重量%的银、8重量%的铜和2重量%的钛(用作活性金属组分)(Ag:Cu:Ti=90:8:2)形成含活性金属的钎料,将其捏合并丝网印刷在尺寸为34mm×34mm×0.6mm的氮化铝衬底的两侧,以具有20微米的厚度。然后,在其上设置尺寸为34mm×34mm×0.25mm的无氧铜板,在真空中于850℃进行加热,使其与氮化铝衬底的两面结合。
然后,通过丝网印刷将具有预定电路图案的紫外线固化的、可碱剥离的抗蚀剂涂布在每个铜板上,并且用紫外线进行照射以将抗蚀剂固化。然后,用包含氯化铜、盐酸且余量为水的蚀刻液对铜板的不需要部分进行蚀刻,然后用氢氧化钠水溶液除去抗蚀剂,以形成铜电路。
然后,将具有结合在衬底上的铜电路的结合制品浸入稀硫酸中20秒以进行浸渍。接着,将该结合制品浸渍于含有1.6重量%的EDTA·4Na、3重量%的氨水(含有28重量%的氨的氨水)和5重量%的过氧化氢水溶液(含有35重量%过氧化氢的过氧化氢水溶液)的螯合物水溶液中并在20℃下浸渍20分钟后,浸渍于含有2重量%的亚乙基-三胺五乙酸(DTPA)·5Na和5重量%的过氧化氢水溶液的螯合物水溶液中并在20℃下浸渍52分钟,以除去含活性金属的钎料的不需要部分。
然后,将铜电路板浸入包含14重量%的硫酸、3.2重量%的过氧化氢且余量为水的化学抛光溶液中,并在45℃下浸渍5分钟,以通过化学抛光除去铜电路板的不必要部分,使含活性金属的钎料从铜电路板的侧面部分突出。然后,将铜电路板浸入包含10重量%的镀银去除剂(佐佐木化学品有限公司生产的S-BACK AG-601)、50重量%的过氧化氢水溶液(含有34重量%的过氧化氢)、且其余为水的除银溶液中,并在室温下浸渍3分钟,以(通过化学抛光)除去铜电路板的表面上(附着)的银。此外,所使用的化学抛光溶液的铜溶解速率是银溶解速率的50倍以上,并且除银溶液的银溶解速率是其铜溶解速率的60倍以上。
然后,通过无电Ni-P镀敷形成厚度为3微米的镀膜,以覆盖铜板和含活性金属的钎料,从而得到金属/陶瓷电路板。
对于上述制造的金属/陶瓷电路板,进行以下的硫华试验,评价是否存在迁移的发生。首先,在将金属/陶瓷电路板在270℃下热处理3分钟后,在金属/陶瓷电路板上涂布凝胶(由迈图性能材料有限公司制造的TSE3051)以使其具有约1~2mm的厚度,并在150℃下加热1小时使其固化。将该金属/陶瓷电路板放入容积约1200cm3的玻璃容器中,其中含有4g硫华和20mL用于控制相对湿度的去离子水。然后,将容器密封,在80℃下放置500小时。然后,通过电子探针显微分析仪(EPMA)以500倍的倍率从顶部观察铜板的周边部分的宽度约为1mm的部分,并且通过特征X射线确认从Ni-P镀膜突出的Ag(和S)的部分(具有5微米以上的宽度的点或线部分)。假定突出部分是迁移发生的地点,当迁移发生的地点数量小于10时,评价为没有发生迁移,当其数量为10~20时,评价为发生轻微迁移,当其数量为21~100时,评价为发生大量的迁移。还评价了当发生迁移的地点数量超过100时、或者当发生迁移的地点的宽度超过100微米时、或者当发生迁移的地点基本存在于所有观察区域中时,评价为发生显著的迁移。结果,在本实施例中制造的金属/陶瓷电路板中,发生迁移的地点数量为15,因此发生了轻微的迁移。
当在氮化铝衬底的一个表面上的铜电路板和其另一个表面上的铜板之间的气氛中施加2.5kV的电压时,如果漏电流为5mA以上,则确定造成了击穿。作为结果,没有造成击穿,因此耐受电压高。
在氮化铝衬底的一个表面上的(镀敷的)铜电路板的表面上,通过引线接合来结合直径为0.3mm的环形铝线。然后,检测当牵拉环形铝线的顶部时,铝线是否在没有从铜电路板的表面剥离的情况下断裂(即,检测铝线与铜电路板的引线接合能力)作为结果,铝线断裂而没有从铜电路板的表面剥离,从而通过引线接合将铝线结合到铜电路板上的接合是良好的(铝线与铜电路板的引线接合能力良好)。
为了评价金属/陶瓷电路板的一个表面上(镀敷的)铜电路的焊料润湿性,在除了尺寸为10mm×10mm的将要检测铜电路板的焊料表面的焊料润湿性的部分之外的部分上形成焊料抗蚀剂。然后,将金属/陶瓷电路板在大气中、在烘箱内在245℃下加热2分钟,并使其冷却。然后,在将要检测焊料润湿性的部分上涂布焊料糊料(共晶焊料),以具有约0.5mm的厚度。然后,将金属/陶瓷电路板在大气中、在加热板上在200℃下加热3分钟,并使其冷却。然后,测量湿熔融焊料占据的面积相对于将要检测焊料润湿性的部分的面积(100mm2)的比例(湿扩散焊料的比率)。此外,作为焊料润湿性的评价标准,当湿扩散焊料的比率为95%以上时,将焊料润湿性判定为良好,当湿扩散焊料的比率小于95%时,将焊料润湿性判定为差。作为结果,(镀敷的)铜电路板的焊料润湿性为良好。
实施例2
除了使用包含83重量%的银、10重量%的铜、5重量%的锡和2重量%的钛(作为活性金属成分)(Ag:Cu:Sn:Ti=83:10:5:2)的含活性金属的钎料代替实施例1中使用的含活性金属的钎料,并将含活性金属的钎料丝网印刷以具有10微米的厚度以外,通过与实施例1同样的方法得到金属/陶瓷电路板。
使用该金属/陶瓷电路板,通过与实施例1同样的方法评价是否发生迁移、耐受电压、引线接合性和焊料润湿性。作为结果,发生迁移的地点数量为零,因此没有发生迁移。此外,耐受电压、引线接合性和焊料润湿性良好。
实施例3
除了使用包含83重量%的银、10重量%的铜、5重量%的锡和2重量%的钛(作为活性金属成分)(Ag:Cu:Sn:Ti=83:10:5:2)的含活性金属的钎料代替实施例1中使用的含活性金属的钎料,并将含活性金属的钎料丝网印刷以具有15微米的厚度以外,通过与实施例1同样的方法得到金属/陶瓷电路板。
使用该金属/陶瓷电路板,通过与实施例1同样的方法评价是否发生迁移和耐受电压。作为结果,发生迁移的地点数量为零,因此没有发生迁移。此外,耐受电压为良好。
对比例1
除了没有使用除银溶液进行银的去除以外,通过与实施例1中相同的方法得到金属/陶瓷电路板。
使用该金属/陶瓷电路板,通过与实施例1同样的方法评价是否发生迁移、耐受电压、引线接合性和焊料润湿性。作为结果,发生迁移的地点的数量非常大,由此,虽然耐受电压、引线接合能力和焊料润湿性良好,但发生了显著的迁移。
对比例2
除了没有使用除银溶液进行银的去除以外,通过与实施例2中相同的方法得到金属/陶瓷电路板。
使用该金属/陶瓷电路板,通过与实施例1同样的方法评价是否发生迁移、耐受电压、引线接合性和焊料润湿性。作为结果,发生迁移的地点的数量非常大,由此,虽然耐受电压、引线接合能力和焊料润湿性良好,但发生了显著的迁移。
另外,观察了实施例1~3和对比例1~2的金属/陶瓷电路板的各自的截面。作为结果,虽然在实施例1~3的金属/陶瓷电路板的各自的铜电路板的表面和镀膜之间没有确认到Ag,但在对比例1~2的金属/陶瓷电路板的各自的铜电路板的表面与镀膜之间存在Ag。
虽然已经根据优选的实施方式公开了本发明以便于更好地理解本发明,但是应当理解,在不脱离本发明的原理的情况下,本发明可以以各种方式实施。因此,应理解为本发明包括所有可能的实施方式和对所述实施方式做出的修改,这些实施方式和修改可在不偏离如所附权利要求所详述的本发明的原理的情况下实施。
Claims (8)
1.一种金属/陶瓷电路板的制造方法,所述方法包括以下步骤:
利用包含银的含活性金属的钎料将铜板结合至陶瓷衬底的至少一个表面;
除去所述铜板和含活性金属的钎料的不需要部分;
然后通过化学抛光除去所述铜板的不需要部分,从而使所述含活性金属的钎料从所述铜板的侧面部分突出;以及
通过化学抛光除去附着于所述铜板表面的银。
2.如权利要求1所述的金属/陶瓷电路板的制造方法,其特征在于,所述含活性金属的钎料包含银、铜和活性金属。
3.如权利要求2所述的金属/陶瓷电路板的制造方法,其特征在于,所述含活性金属的钎料包含锡。
4.如权利要求2所述的金属/陶瓷电路板的制造方法,其特征在于,所述含活性金属的钎料中的银含量为70重量%以上。
5.如权利要求1所述的金属/陶瓷电路板的制造方法,其特征在于,还包括以下步骤:在除去附着于所述铜板的表面上的银后,在所述铜板和含活性金属的钎料的暴露表面上形成镀膜。
6.如权利要求5所述的金属/陶瓷电路板的制造方法,其特征在于,通过无电镍合金镀敷来形成所述镀膜。
7.如权利要求1所述的金属/陶瓷电路板的制造方法,其特征在于,利用化学抛光溶液进行所述化学抛光,所述化学抛光溶液的铜溶解速率为银溶解速率的10倍以上。
8.如权利要求1所述的金属/陶瓷电路板的制造方法,其特征在于,利用除银溶液进行银的除去,所述除银溶液的银溶解速率为铜溶解速率的10倍以上。
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US20030066865A1 (en) * | 2001-09-28 | 2003-04-10 | Nobuyoshi Tsukaguchi | Method for producing metal/ceramic bonding circuit board |
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CN111490018A (zh) * | 2019-01-29 | 2020-08-04 | 瑷司柏电子股份有限公司 | 具有金属导热凸块接垫的陶瓷基板元件、组件及制法 |
CN115151371A (zh) * | 2020-03-31 | 2022-10-04 | 同和金属技术有限公司 | 硬钎焊材料和其制造方法以及金属-陶瓷接合基板的制造方法 |
CN111621787A (zh) * | 2020-04-27 | 2020-09-04 | 江苏富乐德半导体科技有限公司 | 一种蚀刻液体系及一种氮化铝基板的刻蚀方法 |
CN116647996A (zh) * | 2023-05-19 | 2023-08-25 | 苏州博湃半导体技术有限公司 | 一种可一体化去除感光干膜和覆铜陶瓷基板焊料层的方法 |
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EP3370488A1 (en) | 2018-09-05 |
JP6799479B2 (ja) | 2020-12-16 |
CN108541149B (zh) | 2022-06-14 |
JP2018145047A (ja) | 2018-09-20 |
KR20180101202A (ko) | 2018-09-12 |
US20180255645A1 (en) | 2018-09-06 |
US10834823B2 (en) | 2020-11-10 |
EP3370488B1 (en) | 2020-04-08 |
KR102387227B1 (ko) | 2022-04-14 |
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