JPWO2008038681A1 - セラミック基板部品及びそれを用いた電子部品 - Google Patents
セラミック基板部品及びそれを用いた電子部品 Download PDFInfo
- Publication number
- JPWO2008038681A1 JPWO2008038681A1 JP2008536402A JP2008536402A JPWO2008038681A1 JP WO2008038681 A1 JPWO2008038681 A1 JP WO2008038681A1 JP 2008536402 A JP2008536402 A JP 2008536402A JP 2008536402 A JP2008536402 A JP 2008536402A JP WO2008038681 A1 JPWO2008038681 A1 JP WO2008038681A1
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- layer
- mainly composed
- substrate component
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000919 ceramic Substances 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 229910052737 gold Inorganic materials 0.000 claims abstract description 40
- 229910001096 P alloy Inorganic materials 0.000 claims abstract description 10
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims description 65
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000005476 soldering Methods 0.000 abstract description 3
- 238000007747 plating Methods 0.000 description 57
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 27
- 229910000679 solder Inorganic materials 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 239000000243 solution Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- 229910018104 Ni-P Inorganic materials 0.000 description 6
- 229910018536 Ni—P Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- -1 phosphorus compound Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- KRAHLZAGPKKBSW-UHFFFAOYSA-N tetrasodium;dioxidophosphanyl phosphite Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])OP([O-])[O-] KRAHLZAGPKKBSW-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910001035 Soft ferrite Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- NCPXQVVMIXIKTN-UHFFFAOYSA-N trisodium;phosphite Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])[O-] NCPXQVVMIXIKTN-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/049—Wire bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
セラミック基板部品10は、内部電極及び外部電極を有するセラミック積層体であり、それを構成する各セラミックグリーンシートは、セラミック誘電体又はソフトフェライト等のセラミック磁性体からなる。セラミック誘電体は、例えばアルミナ、シリカ等を主成分とする。セラミックグリーンシートにAg、Cu等を主成分とする導電ペーストをスクリーン印刷し、内部電極となる下地層40を形成する。外部電極となる下地層40は、最上層及び最下層となるセラミックグリーンシートに積層前に形成しておいても良いし、内部電極を有する積層体を形成した後で形成しても良い。例えば、下地層40を予めセラミックグリーンシートに形成しておく場合、パターンの異なる内部電極が印刷された複数枚のシート、及び下地層40が印刷された2枚のセラミックグリーンシートを積層・圧着した後、焼成する。
セラミック基板部品10のワイヤボンディング電極2aと半導体素子200の端子とをボンディングワイヤ20で接続する。信頼性及び実装の高密度化の観点から、ボンディングワイヤ20は100μm以下の太さの金線が好ましい。得られる電子部品として、増幅器、電圧制御発振器、高周波スイッチ、DC-DCコンバータ等が挙げられる。
アルミナを主成分とするセラミックグリーンシートの表面に、銀を主成分とする導電ペーストをスクリーン印刷し、内部電極を形成した。異なるパターンの内部電極を形成した複数のセラミックグリーンシートを積層及び圧着し、積層体を得た。積層体表面に銀を主体とするペーストを印刷し、厚さ10μmの下地層を形成した。この積層体を900℃で1時間焼成した。
各メッキ層の厚さを蛍光X線厚さ計により測定した。
マーカス型高周波グロー放電発光表面分析装置により計測した。
接続したボンディングワイヤを冶具で破壊するまで引っ張り、ボンディングワイヤの接続強度を測定した。また破壊した部位に応じて破壊モードを下記の通りとした。
ワイヤ切れ:破壊がボンディングワイヤで起こった場合。
パッド剥がれ:ボンディングワイヤが半導体素子のパッドから剥離した場合。
熱処理によりPdが中間層から上層に拡散する程度を調べるため、上層の表面から中間層の間をオージェ電子分光(Auger Electron Spectroscopy,AES)分析を行った。AuとPdの合計濃度を100原子%として、Auの濃度を原子%で表した。
上層を形成する前に、中間層の表面を走査型電子顕微鏡(Scanning Electron Microscope)により観察した。
下層となるNi-P層を形成した後、ギ酸を還元剤とするパラジウムメッキ液により純パラジウムメッキの中間層を形成し、中間層の上に加熱したノーシアン置換型金メッキ液によりAu層を形成した以外、実施例1と同様にして、外部電極を有するセラミック基板部品を作製した。このセラミック基板部品に対して実施例1と同様にして熱処理及びワイヤボンディングを行い、実施例1と同じ評価を行った。結果を表1に示す。
実施例1と同様の方法により中間層に含まれるPの量が異なるセラミック基板部品を作製した。セラミック基板部品の実装電極の一つにSn-Ag-Cuを主成分とする半田ペーストを塗布し、半導体素子を搭載して、ピーク温度を230℃、250℃、300℃及び340℃に設定したリフロー炉を通路させ、半導体素子とセラミック基板部品とを半田接合するとともに、熱処理した。リフロー炉での昇温条件は実施例1と同じであった。実施例1と同じ評価を行った。結果を表2に示す。
Claims (6)
- 上面に複数の外部電極を有するセラミック基板部品であって、前記外部電極はボンディングワイヤが接合されるワイヤボンディング電極を含み、前記ワイヤボンディング電極は、セラミック基板上に順に形成したAg又はCuを主体とする下地層と、Niを主体とする下層と、0.4〜5質量%のPを含有するPd-P合金を主体とする中間層と、Auを主体とする上層とからなり、前記上層は半田付けに伴う加熱の後でPdを含有し、AuとPdの合計を100原子%としてAuの濃度が80原子%以上であることを特徴とするセラミック基板部品。
- 請求項1に記載のセラミック基板部品において、前記中間層中のPの含有量が1.2〜4質量%であり、前記上層におけるAuの濃度が85原子%以上であることを特徴とするセラミック基板部品。
- 請求項1又は2に記載のセラミック基板部品において、前記中間層の厚さが0.05〜0.2μmであることを特徴とするセラミック基板部品。
- 請求項1〜3のいずれかに記載のセラミック基板部品において、前記上層の厚さが0.03〜0.2μmであることを特徴とするセラミック基板部品。
- 請求項1〜4のいずれかに記載のセラミック基板部品において、前記外部電極の一部が、実装部品を半田接続する実装電極であることを特徴とするセラミック基板部品。
- 請求項1〜5のいずれかに記載のセラミック基板部品に半導体素子を実装し、前記半導体素子と前記ワイヤボンディング電極とを金ワイヤで接続したことを特徴とする電子部品。
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JP2014013795A (ja) * | 2012-07-03 | 2014-01-23 | Seiko Epson Corp | ベース基板、電子デバイスおよび電子機器 |
DE102012111334A1 (de) * | 2012-11-23 | 2014-05-28 | Conti Temic Microelectronic Gmbh | Potentialausgleich in einem Steuergerät für ein Kraftfahrzeug |
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