JP7285123B2 - 金めっき方法及びめっき皮膜 - Google Patents
金めっき方法及びめっき皮膜 Download PDFInfo
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Description
このようにすれば、金めっき皮膜の膜厚を薄くしても実装等による熱履歴によってワイヤーボンディング特性の低下を防止する金めっき方法を提供することができる。
本発明の一実施形態に係る金めっき方法は、銅又は銅合金皮膜上に銀触媒を用いてめっきする、ワイヤーボンディング接続のための方法である。上述もしたが、実装等による熱履歴によってワイヤーボンディング特性が低下する傾向にある。また、特に金めっき皮膜の膜厚を薄くした場合に、上記熱履歴によってワイヤーボンディング特性が低下する。これは、熱履歴によって、パラジウム等の金属粒子が金めっき皮膜の粒界から侵入し、金めっき皮膜中に拡散し、金濃度が低下するので、ワイヤーボンディング特性が低下するためである。
次に本発明の他の実施形態に係るめっき皮膜について説明する。発明の他の実施形態に係るめっき皮膜100は、銅又は銅合金皮膜40上に銀触媒を用いてめっきする、ワイヤーボンディング接続のためのめっき皮膜である。
実施例1では、被めっき物として、5cm×5cmの銅皮膜が施された上村工業製BGA基板を使用した。その基板の銅皮膜上に、銀触媒形成工程S10として、パラジウム皮膜を形成するために銀触媒としての銀皮膜を形成した。
実施例2では、銀触媒の膜厚を0.10μmとした。また、パラジウムの平均粒径は0.28μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.3g、熱処理後のワイヤープル平均強度は10.4gであった。
実施例3では、銀触媒の膜厚を0.20μmとした。また、パラジウムの平均粒径は0.30μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.2g、熱処理後のワイヤープル平均強度は10.3gであった。
実施例4では、銀触媒の膜厚を0.30μmとした。また、パラジウムの平均粒径は0.24μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.5g、熱処理後のワイヤープル平均強度は10.2gであった。
実施例5では、銀触媒の膜厚を0.50μmとした。また、パラジウムの平均粒径は0.09μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.4g、熱処理後のワイヤープル平均強度は10.2gであった。
比較例1では、銀触媒形成工程S10の代わりに、パラジウム触媒を付与するパラジウム触媒付与工程を実施した。パラジウムの平均粒径は0.04μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.4g、熱処理後のワイヤープル平均強度は7.4gであった。
比較例2では、銀触媒形成工程S10は実施したが、銀触媒の膜厚を0.01μmとした。また、銀触媒の膜厚が薄すぎたためか、パラジウム皮膜が形成されなかった。また、熱処理前のワイヤープル平均強度は10.0g、熱処理後のワイヤープル平均強度は7.1gであった。
比較例3では、銀触媒形成工程S10は実施したが、銀触媒の膜厚を0.04μmとした。また、銀触媒の膜厚が薄すぎたためか、パラジウム皮膜は部分的に未析出であり、パラジウム皮膜の測定はできなかった。また、熱処理前のワイヤープル平均強度は10.0g、熱処理後のワイヤープル平均強度は7.0gであった。
比較例4では、銀触媒形成工程S10は実施したが、銀触媒の膜厚を0.55μmとした。また、パラジウムの平均粒径は0.08μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.6g、熱処理後のワイヤープル平均強度は9.1gであった。
比較例5では、銀触媒の膜厚を1.00μmとした。また、パラジウムの平均粒径は0.07μmとした。それ以外は実施例1と同様とした。また、熱処理前のワイヤープル平均強度は10.5g、熱処理後のワイヤープル平均強度は8.7gであった。
10 銀皮膜、11 銀粒子、20 パラジウム皮膜、21 パラジウム粒子、30 金皮膜、40 銅又は銅合金皮膜、100 めっき皮膜
Claims (5)
- 銅又は銅合金皮膜上に銀触媒を用いてめっきする、ワイヤーボンディング接続のための金めっき方法であって、
パラジウム皮膜を形成するために銀触媒としての銀皮膜を形成する銀触媒形成工程と、
前記銀触媒上にパラジウム皮膜を形成するパラジウム皮膜形成工程と、
前記パラジウム皮膜上に金めっき皮膜を形成する金めっき皮膜形成工程と、を有し、
前記銀皮膜の膜厚は、0.05μm~0.5μmであり、
前記パラジウム皮膜の結晶粒径の平均粒径は、0.09μm以上であることを特徴とする金めっき方法。 - 前記金めっき皮膜の膜厚は、0.2μm以下であることを特徴とする請求項1に記載の金めっき方法。
- 前記パラジウム皮膜の膜厚は、0.04μm~0.6μmであることを特徴とする請求項1又は2に記載の金めっき方法。
- 銅又は銅合金皮膜上に銀触媒を用いてめっきする、ワイヤーボンディング接続のためのめっき皮膜であって、
前記銅又は銅合金皮膜と、
前記銅又は銅合金皮膜上に形成された、前記銀触媒としての銀皮膜と、
前記銀触媒上に形成されたパラジウム皮膜と、
前記パラジウム皮膜上に形成された金皮膜と、を有し、
前記銀皮膜の膜厚は、0.05μm~0.5μmであり、
前記パラジウム皮膜の結晶粒径の平均粒径は、0.09μm以上であることを特徴とするめっき皮膜。 - 熱処理後のワイヤーボンディング強度が、10.0g以上であることを特徴とする請求項4に記載のめっき皮膜。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019074744A JP7285123B2 (ja) | 2019-04-10 | 2019-04-10 | 金めっき方法及びめっき皮膜 |
KR1020200043466A KR20200119740A (ko) | 2019-04-10 | 2020-04-09 | 금도금 방법 및 도금 피막 |
EP20169060.9A EP3722459B1 (en) | 2019-04-10 | 2020-04-09 | Gold plating method and plating film |
US16/844,647 US20200340120A1 (en) | 2019-04-10 | 2020-04-09 | Gold plating method and plating film |
TW109112120A TW202037756A (zh) | 2019-04-10 | 2020-04-10 | 鍍金方法及鍍層皮膜 |
CN202010280356.0A CN111809170B (zh) | 2019-04-10 | 2020-04-10 | 镀金方法及镀覆膜 |
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KR20230102013A (ko) | 2021-12-29 | 2023-07-07 | (주)엠케이켐앤텍 | 와이어 금도금 조성물, 와이어 금 도금방법 및 이로부터 제조된 금도금 와이어 |
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- 2020-04-09 EP EP20169060.9A patent/EP3722459B1/en active Active
- 2020-04-09 KR KR1020200043466A patent/KR20200119740A/ko active Search and Examination
- 2020-04-09 US US16/844,647 patent/US20200340120A1/en not_active Abandoned
- 2020-04-10 CN CN202010280356.0A patent/CN111809170B/zh active Active
- 2020-04-10 TW TW109112120A patent/TW202037756A/zh unknown
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JP2002289653A (ja) | 2001-03-26 | 2002-10-04 | Hitachi Cable Ltd | 半導体装置用テープキャリアおよびその製造方法 |
JP2005538246A (ja) | 2002-07-17 | 2005-12-15 | アトーテヒ ドイッチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 銀の浸漬めっき |
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JP2013127115A (ja) | 2011-11-17 | 2013-06-27 | Tdk Corp | 被覆体及び電子部品 |
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US20200340120A1 (en) | 2020-10-29 |
EP3722459B1 (en) | 2023-05-10 |
EP3722459A1 (en) | 2020-10-14 |
KR20200119740A (ko) | 2020-10-20 |
CN111809170A (zh) | 2020-10-23 |
TW202037756A (zh) | 2020-10-16 |
CN111809170B (zh) | 2024-03-22 |
JP2020172683A (ja) | 2020-10-22 |
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