CN111809170B - 镀金方法及镀覆膜 - Google Patents
镀金方法及镀覆膜 Download PDFInfo
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- CN111809170B CN111809170B CN202010280356.0A CN202010280356A CN111809170B CN 111809170 B CN111809170 B CN 111809170B CN 202010280356 A CN202010280356 A CN 202010280356A CN 111809170 B CN111809170 B CN 111809170B
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- 238000007747 plating Methods 0.000 title claims abstract description 139
- 239000010931 gold Substances 0.000 title claims abstract description 108
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 51
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 228
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 114
- 239000011248 coating agent Substances 0.000 claims abstract description 104
- 238000000576 coating method Methods 0.000 claims abstract description 104
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910052709 silver Inorganic materials 0.000 claims abstract description 92
- 239000004332 silver Substances 0.000 claims abstract description 92
- 239000003054 catalyst Substances 0.000 claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims description 55
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 8
- 238000012935 Averaging Methods 0.000 claims description 4
- 238000009434 installation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 162
- 230000000052 comparative effect Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 10
- 239000006104 solid solution Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 102100023033 Cyclic AMP-dependent transcription factor ATF-2 Human genes 0.000 description 1
- 101000974934 Homo sapiens Cyclic AMP-dependent transcription factor ATF-2 Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical group OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1601—Process or apparatus
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1646—Characteristics of the product obtained
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- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract
本发明提供镀金方法及镀覆膜,其防止由于安装等引起的热历程而导致引线键合特性降低。另外,提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。一种镀金方法,其特征在于,其是在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的镀金方法,所述方法包括:银催化剂形成工序,其中,为了形成钯覆膜而形成作为银催化剂的银覆膜;钯覆膜形成工序,其中,在所述银催化剂上形成钯覆膜;以及,镀金覆膜形成工序,其中,在在所述钯覆膜上形成镀金覆膜,所述银覆膜的膜厚为0.05μm~0.5μm。
Description
技术领域
本发明涉及一种在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的镀金方法及镀覆膜。
背景技术
以往,用于引线键合连接的镀金在铜或铜合金覆膜上利用置换反应赋予钯催化剂、进行镀钯后实施。或者,在铜或铜合金覆膜上进行镀金,然后镀钯,再次镀金。
例如,专利文献1中,为了获得引线键合特性良好的引线键合用端子,在引线键合用端子的铜的表面上形成钯纯度为99.5重量%以上的置换镀钯覆膜或钯纯度为99.5重量%以上的化学镀钯覆膜、置换镀金覆膜、化学镀金覆膜。
另外,专利文献2中,为了解决由化学镀钯的稳定性下降引起的异常析出的问题,在设置有电路图案的基板上进行镀金、镀钯、再次镀金。
另外,专利文献3中,提供一种铜系金属上的镀钯覆膜,其特征在于,使用催化剂赋予液,在铜系金属上进行化学还原镀钯,该催化剂赋予液用于在铜系金属上赋予0.05~3mg/dm2的金作为催化剂核金属后、在该铜系金属上进行化学还原镀钯,所述催化剂赋予液含有水溶性的金化合物、具有氮原子为2个以上的5元环结构的杂环化合物、及具有亚氨基二乙酸结构的螯合剂作为构成成分。
现有技术文献
专利文献
专利文献1:日本特开2005-197442号公报
专利文献2:日本特开2013-108180号公报
专利文献3:日本专利第5567478号公报
发明内容
发明要解决的问题
但是,专利文献1~3中记载的方法存在由于安装等引起的热历程而导致引线键合特性降低的倾向。另外,特别是在减少镀金覆膜的膜厚的情况下,上述热历程会导致引线键合特性降低。
为此,本发明提供一种防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。另外,提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。
用于解决问题的方案
本发明的一个实施方式涉及的镀金方法的特征在于,其是在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的镀金方法,所述方法包括:银催化剂形成工序,其中,为了形成钯覆膜而形成作为银催化剂的银覆膜;钯覆膜形成工序,其中,在所述银催化剂上形成钯覆膜;以及,镀金覆膜形成工序,其中,在所述钯覆膜上形成镀金覆膜,所述银覆膜的膜厚为0.05μm~0.5μm。
由此,可以提供防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法。
另外,本发明的一个实施方式中,所述钯覆膜的粒径也可以为0.09μm以上。
由此,由于钯的粒径会大至0.09μm以上,因此可以防止由于热历程而导致钯颗粒向金覆膜扩散和固溶,防止引线键合特性的降低。
另外,本发明的一个实施方式中,所述镀金覆膜的膜厚也可以为0.2μm以下。
由此,可以提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法。
另外,本发明的一个实施方式中,所述钯覆膜的膜厚也可以为0.04μm~0.6μm。
由此,由于钯粒径会生长至足够大,因此可以防止由于热历程而导致钯颗粒向金覆膜扩散和固溶,防止引线键合特性的降低。
另外,本发明的其它实施方式涉及的镀覆膜的特征在于,其是在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的镀覆膜,所述镀覆膜具有:所述铜或铜合金覆膜;在所述铜或铜合金覆膜上形成的、作为所述银催化剂的银覆膜;在所述银催化剂上形成的钯覆膜;和在所述钯覆膜上形成的金覆膜,所述银覆膜的膜厚为0.05μm~0.5μm。
由此,可以提供防止由于安装等引起的热历程而导致引线键合特性降低的镀覆膜。
另外,本发明的其他实施方式中,所述钯覆膜的粒径也可以为0.09μm以上。
由此,由于钯的粒径会大至0.09μm以上,因此可以防止由于热历程而导致钯颗粒向金覆膜扩散和固溶,防止引线键合特性的降低。
另外,本发明的其他实施方式中,热处理后的引线拉伸(wire pull)平均强度也可以为10.0g以上。
由此,可以提供即使在热处理后也充分保证了引线键合强度的镀覆膜。
发明的效果
如上所述,根据本发明,可以提供一种防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。另外,可以提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。
附图说明
图1是示出本发明的一个实施方式涉及的镀金方法的概要的工序图。
图2是示出本发明的其它实施方式涉及的镀覆膜的截面图的示意图。
附图标记说明
S10 银催化剂形成工序
S20 钯覆膜形成工序
S30 镀金覆膜形成工序
10 银覆膜
11 银颗粒
20 钯覆膜
21 钯颗粒
30 金覆膜
40 铜或铜合金覆膜
100 镀覆膜
具体实施方式
以下,参照附图,对本发明优选的实施方式详细地进行说明。需要说明的是,下述说明的本实施方式并不是对权利要求书中记载的本发明的内容进行的不恰当的限定,本实施方式中说明的特征并非全部都是本发明所必不可少的解决手段。
[镀金方法]
本发明的一个实施方式涉及的镀金方法是在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的方法。如上所述,存在由于安装等引起的热历程而导致引线键合特性降低的倾向。另外,尤其是在减少镀金覆膜的膜厚的情况下,上述热历程会导致引线键合特性降低。这是因为热历程会导致钯等金属颗粒从镀金覆膜的晶界侵入,扩散至镀金覆膜中,金浓度降低,从而引线键合特性降低。
为此,根据本发明的一个实施方式涉及的镀金方法,可以解决上述的问题。以下,进行详细说明。
如图1所示,本发明的一个实施方式涉及的镀金方法的特征在于,包括:银催化剂形成工序S10,其中,为了形成钯覆膜而形成作为银催化剂的银覆膜;钯覆膜形成工序S20,其中,在上述银催化剂上形成钯覆膜;以及,镀金覆膜形成工序S30,其中,在上述钯覆膜上形成镀金覆膜,上述银覆膜的膜厚为0.05μm~0.5μm。
本发明的一个实施方式涉及的镀金方法具备上述3个工序。需要说明的是,银催化剂形成工序S10、钯覆膜形成工序S20、镀金覆膜形成工序S30之后的水洗、用于形成银催化剂、钯覆膜和镀金覆膜的预处理包括在上述工序中。
银催化剂形成工序S10为了形成钯覆膜而形成作为银催化剂的银覆膜。本发明的一个实施方式涉及的镀金方法中所含的银催化剂形成工序S10用来制作用于使后述的钯的金属颗粒(粒径)生长的催化剂。
虽然也可以使用其它金属作为催化剂以代替银催化剂,但在例如钯催化剂(形成钯催化剂、形成镀钯覆膜的情况)的情况下,由于钯膜是种子状的析出,因此每1个的晶体粒径小。因此,钯颗粒容易进入镀金覆膜的晶界,从而发生扩散和固溶。另一方面,由于银覆膜是层状的析出,因此每1个的晶体粒径大。并且,通过长大的银颗粒,下一工序的钯覆膜的晶体也可以长大。因此,长大的钯颗粒将不容易进入在钯覆膜上形成的镀金覆膜的晶界,可以防止钯颗粒向镀金覆膜扩散和固溶。因此,可以防止镀金覆膜中的钯浓度的上升,维持镀金覆膜中的金的浓度,从而可以防止引线键合特性的降低。
因此,银覆膜为0.05μm~0.5μm。银覆膜小于0.05μm时,在下一工序的钯覆膜形成工序将难以形成钯覆膜。另一方面,银覆膜大于0.5μm时,银粒径将变小,钯的粒径也将变小,因而不优选。因此,引线键合会降低。
上述钯覆膜的平均粒径(以下,仅称为“粒径”)优选为0.09μm以上,进一步优选为0.20μm以上。由此,由于钯的粒径会大至0.09μm以上,因此可以防止由于热历程而导致钯颗粒向金覆膜扩散和固溶,防止引线键合特性的降低。
需要说明的是,覆膜的粒径为通过扫描型电子显微鏡(SEM)对覆膜的截面进行观察并对任选的10个颗粒平均而得到的值。以下所示的覆膜的测定方法也是如此。
上述镀金覆膜的膜厚优选为0.30μm以下,进一步优选为0.20μm以下。由此,可以提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法。因为会防止上述钯向镀金覆膜扩散和固溶。
上述钯覆膜的膜厚优选为0.04μm~0.6μm,进一步优选为0.05μm~0.5μm。由此,钯粒径会充分长大,从而可以防止由于热历程而导致钯颗粒向金覆膜扩散和固溶,防止引线键合特性的降低。
另外,银催化剂形成工序S10、钯覆膜形成工序S20和镀金覆膜形成工序S30中各自使用的镀液可以为电镀液、化学镀液,可以任意选择置换型、还原型、置换还原型。
对于热处理的温度,温度为60~300℃,优选为90~300℃,进一步优选为100~150℃。
另外,可以根据需要,增加清洗、蚀刻、酸洗工序。清洗、蚀刻、酸洗工序中使用的药液可以选择公知的药液。
本发明的一个实施方式涉及的镀金方法在形成于印刷电路板、BGA基板、封装基板等上的铜或铜合金上尤其有效。
综上所述,根据本发明的一个实施方式涉及的镀金方法,可以提供一种防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法。另外,可以提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法。进一步地,根据本发明的一个实施方式涉及的镀金方法,由于不使用钯催化剂,因此仅在铜或铜合金上形成银催化剂,可以防止由于镀金的短路等引起的不良,电路的精细图案性也优异。
另外,与以往的镀金方法相比,由于可以不使用金催化剂、减少镀金覆膜的厚度,因此成本方面也是有利的。另外,可以适用于无氰的情况。
[镀覆膜]
接着,对本发明的其它实施方式涉及的镀覆膜进行说明。发明的其它实施方式涉及的镀覆膜100是在铜或铜合金覆膜40上使用银催化剂进行镀覆的、用于引线键合连接的镀覆膜。
如图2所示,本发明的其它实施方式涉及的镀覆膜100的特征在于,具有:铜或铜合金覆膜40;在上述铜或铜合金覆膜40上形成的、作为上述银催化剂的银覆膜10;在上述银催化剂上形成的钯覆膜20;和在上述钯覆膜20上形成的金覆膜30,上述银覆膜10的膜厚为0.05μm~0.5μm。
如上所述,由于银覆膜是层状的析出,因此每1个的晶体尺寸大。并且,通过长大的银颗粒11,也可以使银催化剂上的钯覆膜20的晶体长大。因此,长大的钯颗粒21将不容易进入在钯覆膜20上形成的金覆膜30的晶界,可以防止钯颗粒21向金覆膜30扩散和固溶。因此,可以防止金覆膜30中的钯浓度的上升,维持金覆膜中的金的浓度,从而可以防止引线键合特性的降低。
上述钯覆膜20的粒径优选为0.09μm以上,进一步优选为0.20μm以上。由此,由于钯的粒径会大至0.09μm以上,因此可以防止热历程导致钯颗粒21向金覆膜扩散和固溶,防止引线键合特性的降低。
热处理后的引线拉伸平均强度优选为10.0g以上。由此,可以提供即使在热处理后也充分保证了引线键合强度的镀覆膜。此处的热处理的条件是指在175℃下处理16小时。另外,引线拉伸平均强度的引线键合强度采用使用Dage#4000的装置进行引线拉伸试验的测定方法。
综上所述,根据本发明的其它实施方式涉及的镀覆膜,可以提供防止由于安装等引起的热历程而导致引线键合特性降低的镀覆膜。另外,可以提供即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀覆膜。进一步地,根据本发明的其它实施方式涉及的镀覆膜,由于不使用钯催化剂,因此仅在铜或铜合金上形成银催化剂,可以防止由于镀金的短路等引起的不良,电路的精细图案性也优异。
实施例
接着,通过实施例对本发明的一个实施方式涉及的镀金方法及镀覆膜进行更详细的说明。需要说明的是,本发明并不限于这些实施例。
[实施例1]
实施例1中,作为被镀物,使用具有5cm×5cm的铜覆膜的上村工业制造的BGA基板。作为银催化剂形成工序S10,在该基板的铜覆膜上为了形成钯覆膜而形成作为银催化剂的银覆膜。
接着,作为钯覆膜形成工序S20,在上述银催化剂上形成钯覆膜。需要说明的是,钯覆膜通过化学镀形成。
然后,作为镀金覆膜形成工序S30,在上述钯覆膜上形成镀金覆膜。需要说明的是,镀金覆膜通过化学镀形成。
此时,银覆膜的膜厚设为0.05μm,钯覆膜的膜厚设为0.1μm,镀金覆膜的膜厚设为0.1μm。另外,钯的平均粒径设为0.25μm。需要说明的是,各覆膜的测定使用荧光X射线装置SFT-9550(SII)进行测定。钯的平均粒径为通过附带EBSD检测器Digiview5(EDAX)的场发射型扫描电子显微镜(FE-SEM)对覆膜的截面进行测定并对任选的10个颗粒平均而得到的值。
如上所述,形成了作为银催化剂的银覆膜、钯覆膜、镀金覆膜。
在上述3个工序S10、S20、S30之后,在热处理的前后实施上述镀金覆膜的引线键合和引线拉伸试验,以得到的引线拉伸平均强度进行评价。引线键合装置使用HB16(TPT)。作为接合条件,采用毛细管B1014-51-18-12(PECO),使用1mil Au引线(SPM)作为引线,阶段温度为150℃,超声波为250mW(1st)、250mW(2nd),接合时间为200ms(1st)、50ms(2nd),拉伸力为25gf(1st)、50gf(2nd),步长为0.7mm。另外,引线键合强度的测定方法采用引线拉伸试验,装置采用Dage#4000,测试速度设为170μm/秒。
由此,在镀金覆膜后测定热处理前的引线拉伸平均强度。其结果为10.8g。
接着,进行175℃下16小时的热处理,再次通过上述方法测定引线键合强度,以引线拉伸平均强度进行评价。其结果为10.7g。
[实施例2]
实施例2中,将银催化剂的膜厚设为0.10μm。另外,钯的平均粒径设为0.28μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.3g,热处理后的引线拉伸平均强度为10.4g。
[实施例3]
实施例3中,将银催化剂的膜厚设为0.20μm。另外,钯的平均粒径设为0.30μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.2g,热处理后的引线拉伸平均强度为10.3g。
[实施例4]
实施例4中,将银催化剂的膜厚设为0.30μm。另外,钯的平均粒径设为0.24μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.5g,热处理后的引线拉伸平均强度为10.2g。
[实施例5]
实施例5中,将银催化剂的膜厚设为0.50μm。另外,钯的平均粒径设为0.09μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.4g,热处理后的引线拉伸平均强度为10.2g。
[比较例1]
比较例1中,实施赋予钯催化剂的钯催化剂赋予工序以代替银催化剂形成工序S10。钯的平均粒径设为0.04μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.4g,热处理后的引线拉伸平均强度为7.4g。
[比较例2]
比较例2中,虽然实施了银催化剂形成工序S10,但将银催化剂的膜厚设为0.01μm。另外,可能是由于银催化剂的膜厚过薄,因而未形成钯覆膜。另外,热处理前的引线拉伸平均强度为10.0g,热处理后的引线拉伸平均强度为7.1g。
[比较例3]
比较例3中,虽然实施了银催化剂形成工序S10,但将银催化剂的膜厚设为0.04μm。另外,可能是由于银催化剂的膜厚过薄,因而局部未析出钯覆膜,未能进行钯覆膜的测定。另外,热处理前的引线拉伸平均强度为10.0g,热处理后的引线拉伸平均强度为7.0g。
[比较例4]
比较例4中,虽然实施了银催化剂形成工序S10,但将银催化剂的膜厚设为0.55μm。另外,钯的平均粒径设为0.08μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.6g,热处理后的引线拉伸平均强度为9.1g。
[比较例5]
比较例5中,将银催化剂的膜厚设为1.00μm。另外,钯的平均粒径设为0.07μm。其他条件与实施例1相同。另外,热处理前的引线拉伸平均强度为10.5g,热处理后的引线拉伸平均强度为8.7g。
将上述的条件和结果示于表1中。
[表1]
所有的实施例中,热处理前后的引线拉伸平均强度无差异,由此可知防止了由于热历程而导致的引线键合特性的降低。另外,钯覆膜的粒径为0.09μm以上时,防止了由于热历程而导致的引线键合特性的降低。认为这是由于钯颗粒不容易侵入镀金覆膜的晶界,防止了扩散和固溶。
另一方面,在未实施银催化剂形成工序S10的比较例1中,热处理前后的引线拉伸平均强度的差异大,发生了由于热历程而导致的引线键合特性的降低。
另外,将银催化剂形成工序S10中的作为银催化剂的银覆膜设为0.01μm的比较例2、比较例3中,可能是由于银覆膜过薄,未能形成钯覆膜,钯覆膜未析出或局部未析出,发生了由于热历程而导致的引线键合特性的降低。
另外,将银催化剂形成工序S10中的作为银催化剂的银覆膜设为0.55μm和1.00μm的比较例4和5中,发生了由于热历程而导致的引线键合特性的降低。进一步地,膜厚增加得越多,钯的平均粒径变得越小,由于热历程而导致的引线键合特性的降低越多。认为这是由于膜厚增加使银和钯的晶体粒径变小了。
综上所述,通过应用本实施方式涉及的镀金方法及镀覆膜,可以提供一种防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。另外,可以提供一种即使减少镀金覆膜的膜厚也能防止由于安装等引起的热历程而导致引线键合特性降低的镀金方法及镀覆膜。
需要说明的是,虽然如上所述,对本发明的各实施方式和各实施例进行了详细的说明,但本领域技术人员可以容易地理解在实质上不脱离本发明的特征和效果的范围内,可以进行各种变形。因此,这样的变形例也全部包含在本发明的范围内。
例如,在说明书或附图中,与具有更宽泛的含义或相同含义的不同技术用语一起至少记载了一次的技术用语在说明书或附图的任何位置,均可以替换为该不同技术用语。另外,镀金方法及镀覆膜的构成、操作也并不限于本发明的各实施方式和各实施例中的说明的构成、操作,可以进行各种变形。
Claims (5)
1.一种镀金方法,其特征在于,其是在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的镀金方法,所述方法包括:
银催化剂形成工序,其中,为了形成钯覆膜而形成作为银催化剂的银覆膜;
钯覆膜形成工序,其中,在所述银催化剂上形成钯覆膜;以及,
镀金覆膜形成工序,其中,在所述钯覆膜上形成镀金覆膜,
所述银覆膜的膜厚为0.05μm~0.5μm,
所述钯覆膜的晶体粒径的平均粒径为0.09μm以上,所述平均粒径为通过扫描型电子显微镜SEM对所述钯覆膜的截面进行观察并对任选的10个颗粒平均而得到的值。
2.根据权利要求1所述的镀金方法,其特征在于,所述镀金覆膜的膜厚为0.2μm以下。
3.根据权利要求1或2所述的镀金方法,其特征在于,所述钯覆膜的膜厚为0.04μm~0.6μm。
4.一种镀覆膜,其特征在于,其是在铜或铜合金覆膜上使用银催化剂进行镀覆的、用于引线键合连接的镀覆膜,所述镀覆膜具有:
所述铜或铜合金覆膜;
在所述铜或铜合金覆膜上形成的、作为所述银催化剂的银覆膜;
在所述银催化剂上形成的钯覆膜;和
在所述钯覆膜上形成的金覆膜,
所述银覆膜的膜厚为0.05μm~0.5μm,
所述钯覆膜的晶体粒径的平均粒径为0.09μm以上,所述平均粒径为通过扫描型电子显微镜SEM对所述钯覆膜的截面进行观察并对任选的10个颗粒平均而得到的值。
5.根据权利要求4所述的镀覆膜,其特征在于,热处理后的引线拉伸平均强度为10.0g以上。
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