JP2010278138A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2010278138A JP2010278138A JP2009127872A JP2009127872A JP2010278138A JP 2010278138 A JP2010278138 A JP 2010278138A JP 2009127872 A JP2009127872 A JP 2009127872A JP 2009127872 A JP2009127872 A JP 2009127872A JP 2010278138 A JP2010278138 A JP 2010278138A
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- 238000007789 sealing Methods 0.000 claims abstract description 144
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- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
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Abstract
【解決手段】半導体装置の製造方法は、貫通孔8aを有する配線基板1と、基体の一面から突出するチップ支持部が設けられている支持基板を重ね合わせ、前記チップ支持部を前記貫通孔に挿入して、前記チップ支持部の先端を配線基板の一面から突出させる工程と、前記チップ支持部の先端上に半導体チップ9を載置する工程と、前記配線基板の一面上に前記半導体チップを覆う第一の封止樹脂12を形成する工程と、前記支持基板が取り除かれることで開口した前記貫通孔に、第二の封止樹脂13を充填して前記第一の封止樹脂と一体化させる工程と、を採用する。
【選択図】図2
Description
aが開口される。また、チップ支持部26の先端に対応する部分には、開口部8bが形成される。開口部8bは、チップ支持部26によって第1の封止樹脂が象られることで形成される。貫通孔8aと開口部8bは相互に連通し、半導体チップ9の製品形成部20側の面を露出させる。
は、配線母基板1aが支持基板25aに装着された状態を示す。半導体チップ9の一面の周辺近傍位置には複数の電極パッド10aからなる電極パッド列10が形成されている。チップ支持部26は半導体チップ9の製品形成部20側の面を、電極パッド列10に対応する位置より支える配置となる。半導体チップ9の構成は、第1の実施形態と同様であるためその説明を省略する。
Claims (9)
- 一又は二以上の貫通孔を有する配線基板となる製品形成部が複数配置されている配線母基板を用意するとともに、基体の一面から突出するチップ支持部が設けられている支持基板を用意し、前記配線母基板と前記支持基板を重ね合わせるとともに、前記チップ支持部を前記貫通孔に挿入して、前記チップ支持部の先端を前記製品形成部の一面から突出させる工程と、
前記チップ支持部の先端上に半導体チップを載置する工程と、
前記製品形成部の一面上に前記半導体チップを覆う第一の封止樹脂を形成する工程と、
前記配線母基板から前記支持基板を取り除く工程と、
前記支持基板が取り除かれることで開口した前記貫通孔に、第二の封止樹脂を充填して前記第一の封止樹脂と一体化させる工程と、を具備してなることを特徴とする、半導体装置の製造方法。 - 前記支持基板を取り除くことにより、前記第一の封止樹脂に、前記貫通孔に連通するとともに前記半導体チップの前記製品形成部側の面を露出させる開口部が形成され、前記第二の封止樹脂を前記貫通孔および前記開口部に充填することを特徴とする、請求項1に記載の半導体装置の製造方法。
- 前記半導体チップとして前記製品形成部と反対側の面に複数の電極パッドからなる電極パッド列を有する半導体チップと、前記配線母基板として、前記貫通孔が前記半導体チップの前記電極パッド列と対応する位置に配置された配線母基板を用意し、前記チップ支持部上に前記半導体チップを載置したのちに、前記チップ支持部を受けとして前記電極パッドにワイヤボンディング処理を行う、請求項1または2に記載の半導体装置の製造方法。
- 前記貫通孔として、前記半導体チップの平面視形状よりも大きな貫通孔を有する配線母基板を用いる請求項1または2に記載の半導体装置の製造方法。
- 一又は二以上の貫通孔を有する配線基板と、
前記配線基板の一面側に、前記配線基板と離間して配置される半導体チップと、
前記配線基板の前記一面上に形成されるとともに前記半導体チップを覆う第一の封止樹脂と、
前記配線基板の貫通孔に充填されるとともに、前記第一の封止樹脂に接合される第二の封止樹脂と、を具備してなることを特徴とする半導体装置。 - 前記第一の封止樹脂が、前記配線基板と、前記半導体チップの間に充填されていることを特徴とする請求項5に記載の半導体装置。
- 前記第二の封止樹脂が、前記半導体チップの前記配線基板側の面に接していることを特徴とする請求項5または6に記載の半導体装置。
- 前記半導体チップの前記配線基板と反対側の面に電極パッド列が設けられ、前記第二の封止樹脂が前記電極パッド列に対応する位置に設けられていることを特徴とする請求項5之至7のいずれかに記載の半導体装置。
- 前記配線基板に、前記貫通孔が一つのみ設けられ、前記貫通孔の大きさが前記半導体チップの平面視形状よりも大とされている請求項5之至7のいずれかに記載の半導体装置。
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US9159681B2 (en) | 2012-07-30 | 2015-10-13 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
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CN103906371B (zh) * | 2012-12-27 | 2017-09-19 | 碁鼎科技秦皇岛有限公司 | 具有内埋元件的电路板及其制作方法 |
CN111446213A (zh) * | 2020-03-23 | 2020-07-24 | 维沃移动通信有限公司 | 一种电路板以及电子设备 |
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JP3544895B2 (ja) * | 1999-07-30 | 2004-07-21 | シャープ株式会社 | 樹脂封止型半導体装置及びその製造方法 |
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JP2001250889A (ja) * | 2000-03-06 | 2001-09-14 | Matsushita Electric Ind Co Ltd | 光素子の実装構造体およびその製造方法 |
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