JP5557439B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5557439B2 JP5557439B2 JP2008274253A JP2008274253A JP5557439B2 JP 5557439 B2 JP5557439 B2 JP 5557439B2 JP 2008274253 A JP2008274253 A JP 2008274253A JP 2008274253 A JP2008274253 A JP 2008274253A JP 5557439 B2 JP5557439 B2 JP 5557439B2
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- sealing body
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- semiconductor chip
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Description
具体的には、複数の配線基板(製品形成部)がマトリクス状に配置された配線母基板を用い、それぞれの製品形成部で所定の工程を行い、最後に配線母基板を製品形成部毎に切断することで半導体装置を得るという方式である。
特に、複数の半導体装置1を同時に製造するMAP方式では、製造段階で、配線基板2複数個分の面積を有する配線母基板を、一括的に封止体で覆うことになるため、配線基板2と封止体8との熱膨張係数の差による反りの問題は深刻化していた。
その結果、配線母基板を個片化した後においても、半導体装置が反るという問題が生じるようになった。
しかし、薄型化の結果、半導体装置自体の硬性が低下したため、熱膨張係数の差による応力に耐えることができず、反るという不都合が生じるようになったのである。
本発明の半導体装置は、半導体チップと、一面に前記半導体チップが搭載され、他面にランドが設けられ、前記半導体チップと前記ランドとを電気的に接続する配線が備えられてなる配線基板と、前記一面及び前記半導体チップを覆う絶縁性樹脂からなる第1の封止体と、前記他面を覆う絶縁性樹脂からなる第2の封止体と、前記第2の封止体を貫通して前記ランドに接続される外部端子と、を具備してなることを特徴とする。
また、本発明の半導体装置は、一面に接続パッドを有し、他面に前記接続パッドと電気的に接続された複数のランドを有する配線基板と、前記配線基板の一面に搭載された少なくとも1以上の半導体チップと、前記半導体チップに設けられた電極パッドと、前記電極パッドと前記接続パッドとを電気的に接続するワイヤと、少なくとも前記半導体チップと、前記ワイヤと、前記配線基板の一面とを覆う絶縁性樹脂からなる第1の封止体と、前記配線基板の他面を覆う絶縁性樹脂からなる第2の封止体とを具備してなることを特徴とする。
更に、本発明の半導体装置の製造方法は、一面に接続パッドを有し、他面に前記接続パッドと電気的に接続された複数のランドを有し、前記ランド上に導体層が搭載された配線基板を準備する工程と、前記配線基板上に、半導体チップを搭載する工程と、前記接続パッドと前記半導体チップに設けられた電極パッドとを、電気的に接続する工程と、少なくとも前記半導体チップと、前記ワイヤとを、前記配線基板の一面の略全面に亘って覆う絶縁性樹脂からなる第1の封止体と、前記導体層が露出されるように前記配線基板の他面の略全面に亘って覆う絶縁性樹脂からなる第2の封止体を形成する工程と、を含むことを特徴とする。
すなわち、配線基板の一面に第1の封止体を、他面に第2の封止体を設けたことにより、第1の封止体が膨張ないし伸縮する際には、第2の封止体も膨張ないし伸縮することとなる。これにより、配線基板の両面での熱膨張のバランスが向上し、半導体装置の反りが低減することとなる。
そして、半導体装置の反りが低減された結果、実装精度が向上し、良好に電気的接続することができ、半導体装置の二次実装の信頼性が上がる。
[第1の実施形態]
図1は、本発明の第1の実施形態である半導体装置の他面(外部端子面)を示す平面図であり、図2は図1のA−A’間断面図である。
また、配線基板2の他面2bに設けられた配線で、ソルダーレジストから露出された部位には、複数のランド4が形成されている。
そして、接続パッド3とこれに対応するランド4とは、配線基板2の内部配線14によりそれぞれ電気的に接続されている。このようにして、接続パッド5及び配線を介して半導体チップ5とランド4とが接続されている。
なお、複数のランド4は、配線基板2上に所定の間隔、例えば1mm間隔で格子状に配置されている。
半導体チップ5は、平面視略四角形の板状で、一面5aに所望の回路、例えば論理回路や記憶回路が形成されている。
半導体チップ5の電極パッド6は、それぞれ対応する配線基板2の接続パッド3と、導電性のワイヤ7により結線されることで電気的に接続されている。ワイヤ7には、例えばAu、Cu等が用いられている。
すなわち、配線基板2の他面2bの導体層10が設けられていない部分に、第2の封止体12が設けられた構成となっている。
そして、第2の封止体12の厚さは、導体層の厚さと略等しくなるように、少なくとも10μm以上、例えば50μm程度に構成されている。
また、第2の封止体12は、例えば第1の封止体11と同じ熱膨張係数の材料で構成され、配線基板の両面を同じ熱膨張係数の材料で挟み込むように構成する。
この結果、実装基板が歪むことで生じる半導体チップ5への応力を、緩和することができ、二次実装の信頼性が向上する。さらに、配線基板2と実装基板とのクロストークノイズを低減することができ、半導体装置1Aの電気特性を向上することができる。
したがって、第1の封止体11を構成する絶縁性樹脂として、第2の封止体12を構成する絶縁性樹脂より、熱膨張係数が小さいものを用いるのが好ましい。これにより、さらに配線基板の両面での熱膨張のバランスが向上し、半導体装置の反りを低減できる。
本実施形態の半導体装置1Aは、配線基板2の一面2a及び他面2bに、第1の封止体11と第2の封止体12を設けることで、半導体装置1Aの反りが低減している。これにより、図3(a)(b)に示すように、積層搭載される他の半導体装置の反りの方向に関係なく、良好に電気的に接続することができる。
図4は、本実施形態の半導体装置の製造に用いる配線母基板の他面を示す平面図で、図5は、図4のB−B’間を示す断面図である。図6及び図7は、本実施形態の半導体装置の製造フローを示す断面工程図である。図8は、封止体形成後の配線母基板の他面を示す平面図である。
また、製品形成部22間はダイシングライン25となっており、後の工程でこのダイシングライン25に沿って切断分離される。なお、枠部23には、ダイシング用の位置決めマーク26が形成されており、配線基板2の他面2b側に第2の封止体12を形成してもダイシングライン25を認識できるように構成されている。
具体的には、図示しないワイヤボンディング装置により、溶融され先端にボールが形成されたワイヤ7を、半導体チップ5の電極パッド6上に超音波熱圧着することで接続する。その後、所定のループ形状を描き、ワイヤ7の後端を対応する接続パッド3上に超音波熱圧着する方法により行う。
なお、ワイヤ7は、例えばAu、Cu等からなる。
この封止工程では、配線母基板21を例えば図7(a)に示すように、トランスファモールド装置の上型27と下型28からなる成型金型29により型締めする。上型27と下型28にはそれぞれキャビティ30が形成されており、下型28のキャビティ30に、配線母基板21の他面21bに設けられた導体層10の端部が密着するように、配線母基板21が配置される。
なお、図示しないが、上下のキャビティ30に供給される封止樹脂32のカル部及びランナー部を、上下で異なる位置に分けて配置することで、封止完了後の配線母基板21からのカル部とランナー部等の除去が容易にできる。
以上の工程により、図6(c)に示すように、配線母基板21の複数の製品形成部22を一括的に覆う第1の封止体11と第2の封止体12が形成される。
配線母基板21の他面21b側は、柱状の導体層10をキャビティ30に密着させるように配置しているため、配線母基板21の他面21bに形成した第2の封止体12から、複数の導体層10の端部が露出するように構成される。
また、上下にそれぞれキャビティ30を設け、封止樹脂32を同時に上下のキャビティ30に充填するように構成しているため、工程の追加なく、第2の封止体12を形成できる。
この工程では、図6(d)に示すように、配線母基板21の他面21bに形成された第2の封止体12から露出され、格子状に配置された複数の導体層10の露出面上に、導電性の金属ボールを搭載し、外部端子となるバンプ電極を形成する。なお、金属ボールには、例えば半田等からなる半田ボール9を用いる。
そして、吸着保持された半田ボール9にフラックスを転写形成し、配線母基板21に設けられた複数の導体層10の露出面に一括搭載する。
全ての製品形成部22へ半田ボール9を搭載した後、配線母基板21をリフローすることで外部端子となるバンプ電極が形成される。
また、配線母基板21の反りが低減したことで、配線母基板21の全ての導体層10に合わせた吸着孔を有するボールマウントツール33で、配線母基板21の全ての製品形成部22に、半田ボール9を一括搭載することが可能となり、処理効率を良くすることができる。
具体的には、配線母基板21の第1の封止体11側をダイシングテープ34に接着し、ダイシングテープ34によって配線母基板21を支持する。その後、図示略のダイシング装置のダイシングブレード35により、縦横に切断して製品形成部22毎に切断分離する。
そして、切断分離後、ダイシングテープ34からピックアップすることで、図1および図2に示すような反りを低減した半導体装置が得られる。
図9は、本発明の第2の実施形態である半導体装置の概略構成を示す断面図である。
本実施形態は、第1の実施形態の変形例であり、同様の部分については、説明を省略する。
図10は、本実施形態の半導体装置の製造フローを示す断面工程図である。
なお、本実施形態は、第1の実施形態の変形例であり、同様の部分については、説明を省略する。
そして、その状態を維持したまま、配線母基板21の他面21bに設けられたランド4に、ボールマウントツール33により半田ボールを搭載し、導体層41を形成する。
すなわち、本実施形態では、導体層41として半田ボールを用いている。
なお、本実施形態では、図7に示す下型28のキャビティ30に、配線母基板21の他面21bに形成された導体層41が、密着していなくても構わない。
このように、第2の封止体を研削することで導体層41を露出させているので、第2の封止体12から導体層41を良好に露出できると共に、複数の導体層41を平坦に形成でき、半導体装置1Bの平坦度が向上する。
このように、導体層41と半田ボール9とを同一材料としたことで、導体層41と半田ボール9とを良好に接合することができる。
図11は、本発明の第3の実施形態である半導体装置の概略構成を示す断面図である。 図12は、本実施形態の半導体装置に用いる配線母基板の他面を示す平面図で、図13は、図12のC−C’間を示す断面図である。
なお、本実施形態は、第1の実施形態の変形例であり、同様の部分については、説明を省略する。
ただし、図11ないし図13に示すように、配線基板2(製品形成部22)の中央位置には、略長方形状の貫通孔である貫通スリット51が形成されている。また、複数の接続パッド3は、配線基板2の他面2bに、貫通スリット51に沿って設けられている。なお、接続パッド3は、配線によりランド4に電気的に接続されている。
すなわち、半導体チップ5の電極パッド6は、半導体チップ5の配線基板2側で、かつ、貫通スリット51に対応する位置に設けられるように構成されている。
また、第2の封止体12の表面に露出した導体層10(外部端子)上には、それぞれ外部端子を構成する半田ボール9が搭載されている。これにより、実質的に外部端子が第2の封止体12を貫通してランド4に接続された状態になる。
また、配線基板2に貫通スリット51を設けたことで、配線基板2と第2の封止体12との接着面積を増やすことができ、密着性を向上することができる。さらに、密着性が向上した結果、半導体装置1Cの耐湿性を向上することもできる。
図14は、本発明の第4の実施形態である半導体装置の他面を示す平面図であり、図15は図14のD−D’間断面図である。図16は、本実施形態の半導体装置に用いる配線母基板の他面を示す平面図で、図17は、図16のE−E’間を示す断面図である。
なお、本実施形態は、第1の実施形態の変形例であり、同様の部分については、説明を省略する。
そして、凹部52を覆い、かつ、第1の封止体11及び第2の封止体12と接合された第3の封止体53が形成された構成となっている。これにより、第1の封止体11、第2の封止体12及び第3の封止体53が一体的に構成されることとなる。
また、配線基板2の側面2cに凹部52を設けたことにより、配線基板2と第3の封止体53との接着面積を増やすことができ、配線基板2と、第3の封止体53、さらには、これと一体となって形成された第1の封止体11及び第2の封止体12との密着性が向上する。
また、配線基板2の側面2cに凹部52を設けた場合について説明したが、図19に示すように、配線基板2の他面に窪んだ形状をした凹部55を設けるように構成しても良い。これにより、配線基板2と封止体12との接着面積が増し、密着性が高まる。
また、ガラスエポキシ基材からなる配線基板2について説明したが、ポリイミド基材からなるフレキシブルな配線基板等に適用しても良い。
また、半導体チップ5と配線基板2とをワイヤ7により接続する場合について説明したが、半導体チップと配線基板との接続はフリップチップ接続を適用しても良い。
Claims (11)
- 半導体チップと、
一面に前記半導体チップが搭載され、他面にランドが設けられ、前記半導体チップと前記ランドとを電気的に接続する配線が備えられてなる配線基板と、
前記一面及び前記半導体チップを覆う絶縁性樹脂からなる第1の封止体と、
前記他面を覆う絶縁性樹脂からなる第2の封止体と、
前記第2の封止体を貫通して前記ランドに接続される外部端子と、を具備し、
前記第1の封止体及び前記第2の封止体のうち、厚さの大きい封止体を構成する絶縁性樹脂の方が、他の封止体を構成する絶縁性樹脂よりも、熱膨張係数が小さいことを特徴とする半導体装置。 - 一面に接続パッドを有し、他面に前記接続パッドと電気的に接続された複数のランドを有する配線基板と、
前記配線基板の一面に搭載された少なくとも1以上の半導体チップと、
前記半導体チップに設けられた電極パッドと、
前記電極パッドと前記接続パッドとを電気的に接続するワイヤと、
少なくとも前記半導体チップと、前記ワイヤと、前記配線基板の一面とを覆う絶縁性樹脂からなる第1の封止体と、
前記配線基板の他面を覆う絶縁性樹脂からなる第2の封止体と、を具備し、
前記第1の封止体及び前記第2の封止体のうち、厚さの大きい封止体を構成する絶縁性樹脂の方が、他の封止体を構成する絶縁性樹脂よりも、熱膨張係数が小さいことを特徴とする半導体装置。 - 前記配線基板の他面に設けられた前記ランド上に、導体層が設けられ、
前記配線基板の他面の前記導体層が設けられていない部分に、前記第2の封止体が設けられ、
前記導体層の厚さと、前記配線基板の他面に設けられた第2の封止体の厚さとが等しいことを特徴とする請求項2に記載の半導体装置。 - 前記導体層に外部端子が設けられ、
前記導体層と前記外部端子とが、同一の材料からなることを特徴とする請求項3に記載の半導体装置。 - 前記配線基板に貫通孔が設けられ、
前記電極パッドが、前記半導体チップの前記配線基板側で、かつ、前記貫通孔に対応する位置に設けられ、
前記ワイヤが、前記貫通孔を通って、前記電極パッドと前記接続パッドとを電気的に接続することを特徴とする請求項2ないし請求項4のいずれか1項に記載の半導体装置。 - 前記配線基板の側面を覆い、かつ、前記第1の封止体及び前記第2の封止体と接合された第3の封止体がさらに設けられていることを特徴とする請求項1ないし請求項5のいずれか1項に記載の半導体装置。
- 前記配線基板の他面に窪んだ形状をした凹部が設けられていることを特徴とする請求項1ないし請求項6のいずれか1項に記載の半導体装置。
- 前記配線基板の他面に半導体チップが設けられていることを特徴とする請求項1ないし請求項7のいずれか1項に記載の半導体装置。
- 前記第1の封止体及び第2の封止体は、それぞれ配線基板の一面及び他面の全面に亘って設けられていることを特徴とする請求項1ないし請求項8のいずれか1項に記載の半導体装置。
- 一面に接続パッドを有し、他面に前記接続パッドと電気的に接続された複数のランドを有し、前記ランド上に導体層が搭載された配線基板を準備する工程と、
前記配線基板上に、半導体チップを搭載する工程と、
前記接続パッドと前記半導体チップに設けられた電極パッドとを、ワイヤで電気的に接続する工程と、
少なくとも前記半導体チップと、前記ワイヤとを、前記配線基板の一面の略全面に亘って覆う絶縁性樹脂からなる第1の封止体と、前記導体層が露出されるように前記配線基板の他面の略全面に亘って覆う絶縁性樹脂からなる第2の封止体を形成する工程と、を含み、
前記第1の封止体及び前記第2の封止体のうち、厚さの大きい封止体を構成する絶縁性樹脂の方が、他の封止体を構成する絶縁性樹脂よりも、熱膨張係数が小さいことを特徴とする半導体装置の製造方法。 - 前記配線基板の他面に設けられた導体層は、配線基板の全面に第2の封止体を形成した後、第2の封止体を、研磨装置を用いて所定の厚さまで研削することで、第2の封止体から露出させることを特徴とする請求項10に記載の半導体装置の製造方法。
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