CN1897261A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN1897261A
CN1897261A CNA2006101062180A CN200610106218A CN1897261A CN 1897261 A CN1897261 A CN 1897261A CN A2006101062180 A CNA2006101062180 A CN A2006101062180A CN 200610106218 A CN200610106218 A CN 200610106218A CN 1897261 A CN1897261 A CN 1897261A
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semiconductor device
resin projection
firsts
resin
electrode
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CN100438005C (zh
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桥元伸晃
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

提供一种可靠性高的半导体装置。半导体装置包括：半导体基板(10)，其具有电极(14)；树脂突起(20)，其设置于半导体基板(10)上，且包含多个第一部分(22)和配置于相邻的两个第一部分(22)之间的第二部分(24)；以及配线(30)，其与电极(14)电连接，且形成为经过树脂突起(20)的任意的第一部分(22)上。第二部分(24)的侧面的基端部具有沿与树脂突起(20)延伸的方向交叉的方向延伸的部分(26)。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
为了小型化电子器件，优选半导体装置的外型较小。但是，伴随半导体装置的分配任务的多样化，形成于半导体芯片中的集成电路的高集成化不断进步，伴随于此，半导体芯片的针脚(pin)数目不断增加。因此，目前正在进行可以同时满足半导体装置的小型化和集成电路的高集成化这两个要求的半导体装置的开发。
作为可以满足该要求的半导体装置，在半导体芯片上形成有配线这一类型的半导体装置受到瞩目(参照特开平2-272737号公报)。在该类型的半导体装置中，因为可以使半导体装置的外形与半导体芯片的外形大致相同，所以可以实现半导体装置的小型化。
但是，即使是该半导体装置，也要求高度可靠性。
发明内容
本发明的目的在于提供一种可靠性高的半导体装置。
(1)本发明的半导体装置，
包括：
半导体基板，其具有电极；
树脂突起，其设置于所述半导体基板上，包含多个第一部分和配置于相邻的两个所述第一部分之间的第二部分；以及
配线，其与所述电极电连接而构成，且形成为经过所述树脂突起的任意的所述第一部分上，
所述第二部分的侧面的基端部具有沿与所述树脂突起延伸的方向交叉的方向延伸的部分。根据本发明，可以增大连结相邻的两条配线的树脂突起的表面距离。因此，在相邻的两条配线之间，可以降低有效的电场强度，所以可以提供一种难以产生由迁移导致的电短路的可靠性高的半导体装置。
(2)在该半导体装置中，
相邻的两个所述第一部分可以沿与所述树脂突起延伸的方向交叉的方向错开配置而构成。
(3)在该半导体装置中，
相邻的两个所述第一部分也可以沿着所述树脂突起延伸的方向配置而构成，
所述第二部分可以具有宽度比所述第一部分窄的部分。
(4)在该半导体装置中，
所述第二部分的高度也可以比所述第一部分低。
(5)在该半导体装置中，
所述第一部分也可以全部呈相同的形状。
附图说明
图1(A)～图1(C)是用于说明应用了本发明的、实施方式的半导体装置的图；
图2是表示安装有应用了本发明的、实施方式的半导体装置的电子模块的图；
图3是用于说明应用了本发明的、实施方式的变形例的半导体装置的图；
图4是用于说明应用了本发明的、实施方式的变形例的半导体装置的图。
图中，1-半导体装置；10-半导体基板；12-集成电路；14-电极；16-钝化膜；20-树脂突起；22-第一部分；24-第二部分；25-凹部；26-部分；28-延设部；30-配线；40-树脂突起；42-第一部分；44-第二部分；45-基端部；50-树脂突起；52-第一部分；54-第二部分；55-部分。
具体实施方式
以下，参照附图说明应用了本发明的实施方式。不过，本发明并不限定于以下的实施方式。
图1(A)～图2是用于说明应用了本发明的、实施方式的半导体装置的图。在此，图1(A)是应用了本发明的、实施方式的半导体装置1的仰视图。又，图1(B)是图1(A)的IB-IB线剖面的局部放大图，图1(C)是图1(A)的IC-IC线剖面的局部放大图。而且，图2是表示安装有半导体装置1的电子模块的图。
如图1(A)～图1(C)所示，本实施方式的半导体装置包含半导体基板10。半导体基板10例如可以是硅基板。半导体基板10可以呈芯片状(参照图2)。此时，半导体基板10的形成有电极14的面(有源面)可以呈长方形。不过，半导体基板10的有源面也可以呈正方形(未图示)。或者，半导体基板10也可以呈晶片状。在半导体基板10，可以形成有一个或者多个(半导体芯片时是一个，半导体晶片时是多个)集成电路12(参照图1(C))。集成电路12的结构并不特别地限定，不过例如可以包含晶体管等有源元件、或者电阻、线圈、电容器等无源元件。
如图1(A)以及图1(C)所示，半导体基板10具有电极14。电极14可以与半导体基板10的内部电连接。电极14也可以与集成电路12电连接。或者，也可以包含未电连接于集成电路12的导电体，而总称为电极14。电极14可以是半导体基板的内部配线的一部分。此时，电极14也可以是半导体基板的内部配线中的利用于与外部的电连接的部分。电极14可以由铝或者铜等金属形成。电极14可以沿着半导体基板10的有源面的1条边排列。电极14也可以排列为锯齿状(参照图1(A))。不过，电极14也可以排列于1条假想的直线上(参照图3)。或者，电极14也可以无秩序排列。
如图1(B)以及图1(C)所示，半导体基板10可以具有钝化膜16。钝化膜16可以形成为使电极14露出。钝化膜16也可以具有使电极14露出的开口。钝化膜16也可以形成为局部地覆盖电极14。此时，钝化膜16也可以形成为覆盖电极14的周围。钝化膜例如可以是SiO2或者SiN等无机绝缘膜。或者，钝化膜16也可以是聚酰亚胺树脂等有机绝缘膜。
如图1(A)～图1(C)所示，本实施方式的半导体装置包含形成于半导体基板10上的树脂突起20。树脂突起20可以形成于钝化膜16上。树脂突起20的材料并不特别地限定，可以应用已经公知的任一的材料。例如，树脂突起20可以由聚酰亚胺树脂、硅改性聚酰亚胺树脂、环氧树脂、硅改性环氧树脂、苯并环丁烯(BCB；benzocyclobutene)、聚苯并噁唑(PBO；polybenzoxazole)等树脂形成。树脂突起20也可以沿着半导体基板10的形成有集成电路12的面(有源面)的边延伸。在半导体基板10的有源面呈长方形的情况下，树脂突起20例如也可以呈沿着有源面的长边延伸的形状。
树脂突起20包含多个第一部分22、以及配置于相邻的两个第一部分22之间的第二部分24。即，树脂突起20可以包含多个第一部分22和第二部分24，第一以及第二部分22、24可以交替地配置。如图1(B)所示，第一以及第二部分22、24也可以一体地形成。
第一部分22是树脂突起20中形成有后述的配线30的区域(与配线30重叠的区域)。如图1(A)所示，相邻的两个第一部分22可以沿与树脂突起20延伸的方向交叉的方向错开配置。此时，相邻的两个第一部分22也可以沿配线30延伸的方向错开配置。相邻的两个第一部分22的中心也可以沿与树脂突起20延伸的方向交叉的方向错开配置。在树脂突起20呈沿着半导体基板10的1条边延伸的形状的情况下，相邻的两个第一部分22也可以沿与该边交叉的方向错开配置。多个第一部分22也可以排列为锯齿状。而且，第二部分24的侧面的基端部具有沿与树脂突起20延伸的方向交叉的方向延伸的部分26(参照图1(A))。换言之，树脂突起20的第二部分24的底面(与半导体基板10对置的面)的外周可以具有沿与树脂突起20延伸的方向交叉的方向延伸的部分。第二部分24的侧面可以具有延伸设置于第一部分22的侧面且沿树脂突起20延伸的方向延伸的延设部28、和连结两个延设部28的连接部。连接部可以沿与树脂突起20延伸的方向交叉的方向延伸。
树脂突起20的表面可以是曲面。特别是，第一部分22的表面可以是曲面。此时，如图1(C)所示，树脂突起20(第一部分22)的剖面形状可以呈半圆状。而且，构成一个树脂突起20的多个第一部分22可以呈相同的形状。此时，第一部分22也可以全部呈相同的形状。又，第二部分24可以包含高度比第一部分22低的部分。第二部分24的高度也可以均比第一部分22低。即，如图1(B)所示，树脂突起20也可以呈具有设置于相邻的两个第一部分22之间的凹部25的形状。
另外，形成树脂突起20的方法并不特别地限定。树脂突起20例如通过使溅射的树脂材料固化(例如，热固化)而形成。或者，树脂突起20可以通过形成沿着1条直线的形状的树脂部并除去其一部分而形成。又，树脂突起20也可以通过模成型而形成。
如图1(A)～图2所示，本实施方式的半导体装置包含配线30。配线30与电极14电连接。配线30形成为到达树脂突起20上。配线30形成为经过树脂突起20的第一部分22上。配线30也可以形成为在树脂突起20的两侧，与半导体基板20接触。即，配线30也可以形成为越过树脂突起20。
配线30的构造以及材料并不特别地限定。例如，配线30可以由多层形成。此时，配线30可以包含由钛钨形成的第一层、和由金形成的第二层(未图示)。或者，配线30也可以由单层形成。
本实施方式的半导体装置1可以呈以上的结构。如上说明所述，树脂突起20的第二部分24的侧面的基端部具有沿与树脂突起20延伸的方向交叉的方向延伸的部分26。于是，可以增大连结相邻的两个第一部分22的、树脂突起20的基端部的表面距离。因此，在相邻的两条配线30之间，可以降低有效的电场强度，所以变得难以产生由迁移导致的电短路，另外，该构造不必存在于全部的树脂突起20，也可以(只)在特别是容易产生迁移的部位，例如电场强度高的树脂突起20之间采用。此时，在其它部位(相对地难以产生迁移的部位)，第二部分24的侧面可以不沿与树脂突起20延伸的方向交叉的方向偏离，而直线状地形成。
又，在制造半导体装置的工序中，有在树脂突起20的表面形成碳化层(或者等离子聚合层)的工序。碳化层或者等离子聚合层的绝缘电阻比树脂低，所以形成于碳化层或者等离子聚合层上的两条配线，与形成于树脂层上的两条配线相比，容易产生电短路。而且，若配线进一步微细化，或者间距变得狭窄，则存在该绝缘电阻的降低对半导体装置的可靠性产生影响之患。
鉴于此点，为了制造可靠性高的半导体装置，公知的有如下技术：除去相邻的两条配线之间的碳化层来确保配线间的绝缘电阻。例如，公知的有通过02等离子蚀刻，除去相邻的两条配线间的树脂层。在半导体装置1中，相邻的两个第一部分22之间的凹部25也可以通过以配线30为掩模，蚀刻树脂突起20而形成。不过，树脂突起20的基端部的表面具有接近与半导体基板10垂直的角度。因此，在现有的方法中，难以在短时间内可靠地除去形成于树脂突起20的基端部的表面的碳化层。又，若增大蚀刻时间，则存在损伤半导体基板的集成电路以及配线30之患。
但是，根据本发明，可以增大树脂突起20的第二部分24的侧面的基端部的距离。即，可以增大相邻的两条配线30之间的树脂突起20的表面距离。因此，即使是在树脂突起20的第二部分24的侧面的基端部形成有碳化层的情况(未完全除去，残留的情况)，也可以使得在相邻的两条配线30之间，难以产生电短路。
另外，如后述，配线30的与第一部分的上端部重叠的区域，作为半导体装置的外部端子而利用。即，树脂突起20(第一部分22)被朝向其它构件推压。此时，若第一部分呈相同的形状，则可以使施加于所有第一部分的压力均匀。因此，可以提供一种安装性优越的半导体装置。
又，树脂突起20也可以呈在相邻的两个第一部分22之间形成有凹部25的构造。于是，可以防止在树脂突起20的上端部，产生相邻的两条配线30间的迁移。
因此，根据本发明的半导体装置，可以提供一种安装性优越且电可靠性高的半导体装置。
另外，在电极14排列为锯齿状的情况下，相邻的两条配线30的、从电极14至树脂突起20的第一部分22的上端部的距离，可以相同。
图2表示安装有半导体装置1的电子模块1000。在图2所示的例中，半导体装置1安装于基板2。在此，基板2可以是刚性基板(例如，玻璃基板、硅基板)，也可以是挠性基板(例如，薄膜基板)。半导体装置1可以被搭载成，形成有配线30的面与基板2对置。此时，基板2的配线和半导体装置1的配线30可以接触并电连接。详细地说，基板2的配线、和配线30的与树脂突起20重叠的区域可以接触并电连接。以此，通过树脂突起20(第一部分22)的弹性力，可以将配线30压紧到基板2的配线。因此，可以提供一种电连接可靠性高的电子模块。另外，在半导体装置1中，可以通过粘接剂(树脂系粘接剂)粘接于基板2。电子模块1000可以是显示设备。显示设备例如可以是液晶显示设备或者EL(ElectricalLuminescence)显示设备。而且，半导体装置1可以是控制显示设备的驱动器IC。另外，虽未图示，不过半导体装置1当然也可以直接安装于构成电子模块1000的玻璃基板。此时，电子模块1000的配线图案可以形成于玻璃上。在电子模块1000的配线图案形成于玻璃上的情况下，成为被称为COG(Chip On Glass)安装的安装方式。该连接机理与安装于基板的上述连接机理相同。
(变形例)
在图3所示的例中，半导体装置包含树脂突起40。树脂突起40包含多个第一部分42、和配置于相邻的两个第一部分42之间的第二部分44。第二部分44，如图3所示，侧面的基端部45可以沿与树脂突起40延伸的方向交叉的方向延伸。换言之，第二部分44的侧面的基端部45可以沿着连结相邻的两个第一部分42的侧面的直线延伸。
在图4所示的例中，半导体装置包含树脂突起50。树脂突起50包含多个第一部分52、和配置于相邻的两个第一部分52之间的第二部分54。如图4所示，第一部分52可以沿着树脂突起50延伸的方向排列。例如，第一部分52可以沿着半导体基板10的有源面的1条边排列。而且，第二部分54具有宽度比第一部分52窄的部分55。另外，在此所谓的「宽度」是指第二部分54的、与树脂突起50延伸的方向交叉的方向上的长度。即，第二部分54可以呈局部缩径的形状。
根据这些变形例，也可以提供一种在相邻的两条配线30间难以产生由迁移导致的电短路，且可靠性高的半导体装置。
另外，本发明并不限定于上述的实施方式，可以进行种种的变更。例如，本发明包含与在实施方式中说明的结构实质上同一的结构(例如，功能、方法以及结果同一的结构、或者目的以及效果同一的结构)。又，本发明包含置换了在本实施方式中说明的结构的非本质的部分而得到的结构。又，本发明包含起到与在实施方式中说明的结构同一的作用效果的结构或者可以达成同一的目的结构。又，本发明包含对在实施方式中说明的结构附加了公知技术而得到的结构。

Claims (5)

1.一种半导体装置，
包括：
半导体基板，其具有电极；
树脂突起，其设置于所述半导体基板上，包含多个第一部分、和配置于相邻的两个所述第一部分之间的第二部分；以及
配线，其与所述电极电连接而构成，且形成为经过所述树脂突起的任意的所述第一部分上，
所述第二部分的侧面的基端部具有沿与所述树脂突起延伸的方向交叉的方向延伸的部分。
2.如权利要求1所述的半导体装置，其中，
相邻的两个所述第一部分沿与所述树脂突起延伸的方向交叉的方向上错开配置而构成。
3.如权利要求1所述的半导体装置，其中，
相邻的两个所述第一部分沿所述树脂突起延伸的方向配置而构成，
所述第二部分具有宽度比所述第一部分窄的部分。
4.如权利要求1至3中的任意一项所述的半导体装置，其中，
所述第二部分的高度比所述第一部分低。
5.如权利要求1至4中的任意一项所述的半导体装置，其中，
所述第一部分全部呈相同的形状。
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EP1744361A3 (en) 2009-07-29
US20070007651A1 (en) 2007-01-11
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CN100438005C (zh) 2008-11-26
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