TWI323030B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI323030B
TWI323030B TW095122949A TW95122949A TWI323030B TW I323030 B TWI323030 B TW I323030B TW 095122949 A TW095122949 A TW 095122949A TW 95122949 A TW95122949 A TW 95122949A TW I323030 B TWI323030 B TW I323030B
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TW
Taiwan
Prior art keywords
resin
semiconductor device
portions
adjacent
wiring
Prior art date
Application number
TW095122949A
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English (en)
Other versions
TW200707687A (en
Inventor
Nobuaki Hashimoto
Original Assignee
Seiko Epson Corp
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200707687A publication Critical patent/TW200707687A/zh
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Publication of TWI323030B publication Critical patent/TWI323030B/zh

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)

Description

1323030 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體裝置。 【先前技術】 為使電子元件小型化，半導體裝置之外型以小為佳。然 而，隨著半導體裝置之角色多樣化，形成於半導體晶片之 積體電路日益高積體化，伴隨此現象，半導體晶片之針腳 數亦持續增加。亦即，目前正著力開發可同時滿足半導體 裳置小型化以及積體電路高積體化的兩個要求之半導體事 置。 ' 作為可因應此要求之半導體裝置，一種在半導體晶片上 形成佈線類型之半導體裝置備受矚目（參照特開平map 號公報）。此類型的半導體裝置，由於可使半導體裝置之 外型與半導體晶片之外型幾乎相$，因此半導體裝置可小 型化。 但是，即使是此半導體裝置亦被要求高信賴性。 本發明之目的係提供一種高信賴性之半導體裝置。 【發明内容】 板； 樹月曰大起，其係包含設置於上述半導體基板上 I部分，以及配置於相 者；及 ⑴關於本發明之半導體裝置係、包含·具有電極之半導體基 之複數第 鄰兩個上述第1部分之間的第2部分 上述樹 佈線其係與上述f極電性連接，並形成為通過 112276.doc 1323030 脂突起之任一者之上述第1部分上者； 上述第2部分側面之基端部具有於與上述樹脂突起延伸 方向交又之方向延伸之部分。根據本發明，可加長連結相 鄰兩條佈線之樹脂突起的表面距離。因此，可在相鄰兩條 佈線之間降低有效電場強度，故可提供一種不易產生因電 致遷移而導致之電性短路之高信賴性之半導體裝置。 (2) 在此半導體裝置中， 相鄰兩個上述第丨部分亦可偏移於與上述樹脂突起延伸 方向交叉之方向而配置。 (3) 在此半導體裝置中， 相鄰兩個上述第丨部分係沿著上述樹脂突起延伸方向而 配置所形成者； 上述第2部分亦可具有寬度較上述第1部分窄之部分。 (4) 在此半導體裝置中， 上述第2部分之高度低於上述第1部分亦可。 (5) 在此半導體裝置中， 上述第1部分亦可全部形成相同形狀。 【實施方式】 以下將參照圖面説明有關應用本發明之實施方式。但 本發明不限於以下實施形態。 圖1 (A)〜圖2係用以針對應用本發明之實施方式的半導體 裝置加以説明者。在此’圖丨（A)係有關應用本發明之實施 方式的半導體裝置1俯瞰圖。另外，圖1(B)係圖1(A)IB-IB 線剖面之—部分放大圖，而圖1(C)係圖1(A)IC-IC線剖面之 112276.doc ⑴3030 一部分放大圖。而圖2係顯示實裝了半導體裝置〗之電子模 組之圖。 本實施方式之相關半導體裝置，如圖1(A)〜圖1(C)所示， 係包含半導體基板1〇。半導體基板1〇可為例如矽基板。半 • 導體基板10可為晶片狀（參照圖2)。此時，形成有半導體基 板10之電極14之面（主動面）可為長方形。但半導體基板 10之主動面可為正方形（未圖示）。抑或，半導體基板1〇可 • 為晶圓狀。於半導體基板10,可形成1個或複數（於半導 體晶片上時為1個，而於半導體晶圓上時為複數）積體電路 12 (參照圖1(C))e積體電路12之結構並無特別限定，可包 含例如電晶體等主動元件，以及電阻器、線圈、電容器等 被動元件。 半導體基板10,如圖1(A)及圖1(c)所示，具有電極14。 電極14可電性連接半導體基板10内部。電極14可電性連接 積體電路12。抑或，包含未與積體電路12電性連接之導電 _ m稱為電極14。電極14可為半導體基板之内部佈線之 邛分。此時，電極14可為半導體基板之内部佈線中、用 、/、外。卩電性連接之部分。電極丨4可以銘或銅等金屬形 成。電極14可沿著半導體基板10之主動面之1邊排列。電 極14可呈鋸齒狀排列（參照圖1(A))。但電極14亦可排列於夏 條低i想直線上（參照圖3)。抑或，電極14亦可隨機地排列。 半導體基板10，如圖1(B)及圖1(C)所示，可具有鈍化膜 16。鈍化膜16可為令電極14露出所形成。鈍化臈“亦可具 有令電極14露出之開口。鈍化膜16亦可為覆蓋一部分電極 112276.doc 1323030 14所形成。此時，鈍化膜16亦可為覆蓋電極14之周圍所形 成。鈍化膜可為Si〇2或SiN等無機絕緣膜。抑或，鈍化膜 16可為聚亞醯胺樹脂等有機絕緣膜。 本實施方式之相關半導體裝置，如圖1(A)〜圖i(c)所示， 包含形成於半導體基板10上之樹脂突起20 »樹脂突起2〇可 形成於鈍化膜16上。樹脂突起20之材料無特別限定，可應 用已周知之任一材料。例如’樹脂突起2〇可以聚亞酿胺樹 φ 脂、矽變性聚亞醯胺樹脂、環氧樹脂、矽變性環氧樹脂、 本環丁浠（BCB;benzocyclobutene)、聚苯 〇惡。坐（ρβο. polybenzoxazole)等樹脂所形成。樹脂突起2〇可沿著半導 體基板10之形成有積體電路12之面（主動面）之邊而延伸。 半導體基板10主動面為長方形時，樹脂突起2〇可為例如沿 著主動面之長邊延伸之形狀。 樹脂突起20係包含複數第}部分22及配置於相鄰兩個第丄 部分22之間的第2部分24。亦即，樹脂突起2〇係可包含複 _ 數第1部分22及第2部分24，且第1及第2部分22、24可交替 配置。第1及第2部分22、24，如圖1(B)所示，可形成為— 體。 第1部分22為於樹脂突起2〇之中，形成有後述佈線3〇區 域（與佈線30重疊之區域）。相鄰兩個第j部分22，如圖“A) 所示，可偏移於與樹脂突起2〇延伸方向交叉之方向而配 置。此時，相鄰兩個第i部分22可偏移於佈線3〇之延伸方 向而配置。相鄰兩個第i部分22，可配置為其中心偏移於 與樹脂突起20延伸方向交叉之方向。樹脂突起2〇如為沿著 112276.doc
丄以JUJU 半導體基板此以延伸之形狀時，相鄰兩個第！部分22可 偏移於與該邊交又之方向而配置。複數之第丨部分22可以 鋸齿狀排列。接著’第2部分24側面之基端部，具有於與 樹月曰穴起2G延伸方向交又之方向延伸之部分叫參照圖 1(A))。換言之，樹脂突起2〇之第2部分24底面（與半導體美 板1〇對向之面)之外圍，可具有於與樹脂突起2〇延伸方二 交又之方向延伸之部分。第2部分24之側面可具有延設於 第1部分2 2側面並於樹脂突起2 〇延伸方向延伸之延設部 28 ’以及料兩個延設部28之連接部。連接部可於與樹脂 大起20延伸方向交又之方向延伸。 樹脂突起20表面可為曲面。特別是第】部分22表面可為 曲面。此日夺’樹脂突起2〇Ul部分切之剖面形狀，如圖 ()所示可為半圓狀。而構成1個樹脂突起2〇之複數第至 部分22可為相同形狀。此時，第i部分22可全為相同形 狀。另外，第2部分24可包含高度較約部分22低之部分。 第2部分24之高度可全部低於第】部分22。亦即，樹脂突起 20,如圖1(B)所示，其形狀可為具有設置於相鄰兩個p 部分22之間的凹部25。 另外’形成樹脂突起20之方法無特別限定。樹脂突起2〇 可為例如令製備圖案後之樹脂材料硬化（例如熱硬化）所形 成。抑或，樹脂突起20可由形成沿著丨條直線的形狀之樹 知4纟除其中-部分而形成。樹脂突起2〇亦可利用成型 鑄模而形成。 本實施方式之相關半導體袭置，如圖UA)〜圖2所示，係 112276.doc 1323030 .^ 4 電極14電性連接。佈㈣係形成 為到達樹脂突起20上。佈線30係形成為通過樹脂突起2〇之 苐1部分22上。佈線30可形成為於樹月旨突起20兩側、並接 觸半導體基板H)。亦即，佈線3G可形成為越過樹脂 20 〇 佈線30之構造及材料無㈣限L，佈㈣係可以 . 魏層形成。此時’佈線30可包含以欽鶴形成之第〗層及 •以金形成之第2層（未圖示）。抑或，佈線30可以單層形成。 、本實施方式之相關半導體裝置i，可為以上結構。如上 述説明，樹脂突起20之第2部分24侧面之基端部，具有於 與樹脂突起2〇延伸方向交叉之方向延伸之部分26。藉此可 連結相鄰兩個第！部分22之樹脂突起2〇，延長其基端部之 ^面距離。因此，可在相鄰兩條佈線30之間，降低實效電 場強度，故不易發生因電致遷移導致的電性短路。另外， 此構造無須存在於所有樹脂突起2〇，可(僅)於特別容易發 • &電致遷移之位置採用，例如電場強度大之樹脂突起⑼之 間。此時’於其他位置（相對而言，不易發生電致遷移之 2置）’第2部分24之側面可不偏移於與樹脂突起延伸方向 交叉之方向，而形成為直線。 此外’半導體裝置之製造步驟中’樹脂突起2〇表面間會 形成碳化層（或電漿聚合層）。由於碳化層或電漿聚合層 之，”邑緣電阻低於樹脂，故形成於碳化層或電漿聚合層上之 兩條佈線’與形成於樹脂層上之兩條佈線相比，較易發生 電性短路。而若佈線之微細化或窄距化持續進行，此絕緣 ii2276.doc 電阻之降低將有影響半導體裝置之信賴性之虞。 有鑑於此，為製造高信賴性之半導體裝置，已知有去除 相鄰兩條佈線之間的碳化層，確保佈線間之絕緣電阻之技 術。例如’已知可藉由02電漿姓刻，去除相鄰兩條佈線間 ^樹脂層。於半導體裝h，相鄰兩個第旧分以間的凹 425，亦可將佈線3〇做為掩模，以餘刻加工樹脂突起而 形成。然而’樹脂突起20之基端部表面，具有對半導體基 板1〇接近垂直之角度。因此，以往的方法難以於短時間内 確實去除形成於樹脂突起20之基端部表面之碳化層。再 者’若加長飯刻時間，+導體基板之積冑電路及佈線胸 有可能損傷。 …、:而根據本發明，可加長樹脂突起20之第2部分24側 7之基端部的距離。亦即’可加長相鄰兩條佈線％之間樹 脂突起20之表面距離。因此，即使於樹脂突起2〇之第2部 分24側面之基端部形成有碳化層時（未能完全去除時”可 使相鄰兩條佈線30之間不易發生電性短路。 此外，如後所述，佈線30上與第丨部分上端部之重疊區 域，係用作半導體裝置之外部端子。亦即，樹脂突起 2〇(第1部分22)將被壓向其他部件。此時，若第丨部分之形 狀相同’可令施加於所有第〗部分之壓力均等。因此，可 提供具有良好實裝性之半導體裝置。 再者，樹脂突起20可為於相鄰兩個第〗部分22之間形成凹 部25之構造。藉此，在樹脂突起2〇之上端部，可防止相鄰 兩條佈線30之間發生電致遷移之情況。 112276.doc —因此’根據本發明之相關半導體裝置，可提供具有良好 實裝性，且電性信賴性高之半導體裝置。 此外’當電極14排列錯齒狀時，相鄰之兩條佈線3〇，從 電極14至树月日犬^2()第i部分22上端部之距離可為相同。 圖2顯示實裝了半導體裝以之電子模組1〇〇〇。圖2所示 之例中’半導體裝置、實裝於基板2。在此，基板乏可為 硬質基板型（例如玻璃基板、石夕基板），亦可為軟性基板（例 士膜片基板）。半導體裝置j，可為形成有佈線3 〇之面與基 板2對向而裝載。此時，基板2之佈線及半導體裝置1之佈 線30可相接觸並電性連接。詳加說明即是，基板2之佈線 可與佈線30上與樹脂突起2〇重疊之區域相接觸並電性連 接。藉此，可藉由樹脂突起“（第丨部分22)的彈力，將佈線 3〇壓向基板2之佈線。因此、可提供電性信賴性高之電子 模組。此外，半導體裝置丨可用接著劑（樹脂類接著劑）接 著於基板2上❶電子模組1〇〇〇可為顯示裝置。顯示裝置可 為液晶顯示器或電激發光（Electrical Luminescence)顯示裝 置。而半導體裝置1可為控制顯示裝置之驅動IC。此外， 雖未圖示，但當然亦可直接將半導體裝置丨實裝於構成電 子模組1000之玻璃基板上。此時，電子模組1〇〇〇之佈線圖 案可形成於玻璃上。電子模組1000之佈線圖案形成於玻璃 上時，為稱之為COG(Chip On Glass)實裝的實裝形式。其 連接構造係與上述實裝於基板者相同。 (變形例） 圖3所示之例中，半導體裝置係包含樹脂突起仂。樹脂 M2276.doc 12 突起40係包含複數第i部分42 ’及配置於相鄰之兩個第p
分42之間的第2部分44。第2部分44，如圖3所示側面。P 基端部45可於與樹脂突起4〇延伸方向交又之方向而延伸, 換言之，第2部分44側面之基端部45可沿著連接相鄰之兩 個第1部分42側面之直線而延伸。 圖4所示之例中，半導體裝置係包含樹脂突起$樹脂 突起50係包含複數第丨部分52，及配置於相鄰之兩個第^ 分52之間的第2部分54。第i部分52，如圓*所示，可沿著 樹脂突起50延伸方向而排列。例如’第丨部分52可沿=半 導體基㈣主動面以邊而排列。而第2部分M具有二 第1部分52窄之部分M。另外，在此所謂的「寬度」^係 指第2部分54與樹脂突起5〇延伸方向交又之方向之長度。 亦即，第2部分54可為部分中間較細之形狀。 又 根據以上變形例，亦可提供在相鄰兩 因電致遷移而導致電性短路，且高信賴性之半導
此外，本發明並不限於上述實施形態，可有種種變形。 例如本發明係包含與實施形態所説明之結構實質上相同 之結構（例如，機能、方法及結果相同之結構，或者是目 的及效果相同之結構）。另夕卜’本發明係包含取代了實施 形態中所説明之結構的非本質部分之結構。另外本發明 係包含與實施形態中所説明之結構發生相同作用效果之結 構或可達成相同目的之結構。另外，本發明係包含於實施 形態中所説明之結構上附加周知技術之結構。 【圖式簡單說明】 112276.doc 丄323030 圖1(A)〜圖1(C)為説明應用本發明之實施形態之相關半 導體裝置之用的圖。 圖2為顯示貫裝了應用本發明之實施形態之相關半導體 裝置的電子模組之圖。 圖3為說明應用本發明之實施形態的變形例之相關半導 體裝置之用的圖。 圖4為說明應用本發明之實施形態的變形例之相關半導 體裝置之用的圖。 【主要元件符號說明】 1 半導體裝置 10 半導體基板 12 積體電路 14 電極 16 鈍化膜 20 樹脂突起 22 第1部分 24 第2部分 25 凹部 26 部分 28 延設部 30 佈線 40 樹脂突起 42 第1部分 44 第2部分 112276.doc 1323030 45 基端部 50 樹脂突起 52 第1部分 54 第2部分 55 部分 112276.doc -15

Claims (1)

1323030 ' 第095122949號專利申請案
ΙδΛ•日解替換頁 中文申請專利範圍替換本(98年9月） 十、申請專利範圍： 1. 一種半導體裝置，其包含： 具有電極之半導體基板； 樹脂突起，其係包含設置於上述半導體積板上之複數 第1部分，以及配置於相鄰兩個上述第丨部分之間的第2 部分者；及 佈線，其係與上述電極電性連接，且形成為通過上述 樹脂突起之任一者之上述第i部分上者；且 上述第1部分係被上述樹脂突起之上述佈線覆蓋的部 上述第2部分係被上述樹脂突起之相鄰兩個上述第旧 分包夾的部分， 上述第2部分之高度低於上述第丨部分， 上述第2部分側面之基端部具有於與上述樹脂突起延 伸方向交又之方向延伸之部分。 2. 如請求項1之半導體裝置，盆細工& 具中相鄰兩個上述第1部分係 於與上述樹脂突起延伸方向交 Ah w乂又之方向偏移而配置所形 成者。 3. 如請求項1之半導體裝置，i中 /、〒相鄰兩個上述第1部分係 者上述樹脂突起延伸方向而配置所形成者； 上述第2部分具有寬度窄於上述第i部分之部分。 4.如請求項1之半導體裝置，其中 相 甲上述第1部分全部係形成 相同形狀。 J12276-980903.doc
TW095122949A 2005-07-11 2006-06-26 Semiconductor device TWI323030B (en)

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