CN1839215A - Ito溅射靶 - Google Patents
Ito溅射靶 Download PDFInfo
- Publication number
- CN1839215A CN1839215A CNA2004800238565A CN200480023856A CN1839215A CN 1839215 A CN1839215 A CN 1839215A CN A2004800238565 A CNA2004800238565 A CN A2004800238565A CN 200480023856 A CN200480023856 A CN 200480023856A CN 1839215 A CN1839215 A CN 1839215A
- Authority
- CN
- China
- Prior art keywords
- ito
- target
- particle
- sputtering target
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
试样 | 密度(g/cm3) | 100μm以上的粒子数(个/μm2) | 瘤覆盖率(%) | 电弧放电数(次) |
实施例1 | 7.129 | 0.015 | 0.12 | 31 |
实施例2 | 7.130 | 0.19 | 0.11 | 35 |
实施例3 | 7.132 | 0.80 | 0.09 | 48 |
比较例1 | 7.132 | 1.10 | 0.11 | 150 |
比较例2 | 7.133 | 1.30 | 0.12 | 213 |
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003296077 | 2003-08-20 | ||
JP296077/2003 | 2003-08-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1839215A true CN1839215A (zh) | 2006-09-27 |
CN100489150C CN100489150C (zh) | 2009-05-20 |
Family
ID=34213582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800238565A Active CN100489150C (zh) | 2003-08-20 | 2004-08-04 | Ito溅射靶 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7504351B2 (zh) |
JP (1) | JP4813182B2 (zh) |
KR (1) | KR100727242B1 (zh) |
CN (1) | CN100489150C (zh) |
TW (1) | TWI290178B (zh) |
WO (1) | WO2005019492A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7259085B2 (en) * | 2001-12-03 | 2007-08-21 | Nippon Sheet Glass Company, Limited | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate |
JP4562664B2 (ja) * | 2006-02-07 | 2010-10-13 | 三井金属鉱業株式会社 | Ito焼結体およびitoスパッタリングターゲット |
JP2007211265A (ja) * | 2006-02-07 | 2007-08-23 | Mitsui Mining & Smelting Co Ltd | Ito焼結体およびitoスパッタリングターゲット |
JP5091414B2 (ja) * | 2006-03-14 | 2012-12-05 | 三井金属鉱業株式会社 | Ito焼結体、スパッタリングターゲット材、スパッタリングターゲット、ならびにスパッタリングターゲット材の製造方法 |
KR20100012040A (ko) * | 2007-06-26 | 2010-02-04 | 닛코 킨조쿠 가부시키가이샤 | 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체 |
CN101687708B (zh) | 2007-07-13 | 2013-01-02 | Jx日矿日石金属株式会社 | 复合氧化物烧结体、非晶复合氧化膜及其制造方法和晶体复合氧化膜及其制造方法 |
CN102016112B (zh) * | 2008-06-10 | 2012-08-08 | Jx日矿日石金属株式会社 | 溅射用氧化物烧结体靶及其制造方法 |
US9214253B2 (en) | 2009-10-26 | 2015-12-15 | Jx Nippon Mining & Metals Corporation | Sintered compact of indium oxide system, and transparent conductive film of indium oxide system |
TWI720097B (zh) | 2016-07-11 | 2021-03-01 | 日商半導體能源硏究所股份有限公司 | 濺射靶材及濺射靶材的製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05247636A (ja) * | 1992-03-06 | 1993-09-24 | Hitachi Metals Ltd | インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法 |
JP3457969B2 (ja) * | 1992-05-11 | 2003-10-20 | 東ソー株式会社 | 高密度ito焼結体及びスパッタリングターゲット |
JP3324164B2 (ja) * | 1992-12-25 | 2002-09-17 | 東ソー株式会社 | 酸化インジウム粉末及びその製造方法並びにito焼結体の製造方法 |
JP3781878B2 (ja) * | 1996-10-04 | 2006-05-31 | 同和鉱業株式会社 | Ito焼結体およびitoスパッタリングターゲット |
JP3931363B2 (ja) * | 1996-12-20 | 2007-06-13 | 東ソー株式会社 | Ito焼結体の製造法 |
JP3576364B2 (ja) * | 1997-10-13 | 2004-10-13 | 株式会社日鉱マテリアルズ | Itoスパッタリングターゲットのクリーニング方法 |
JP3676961B2 (ja) * | 1999-04-02 | 2005-07-27 | 株式会社日鉱マテリアルズ | Ito膜形成用酸化錫−酸化インジウム粉末及びito膜形成用スパッタリングターゲット |
WO2002072912A1 (fr) | 2001-03-12 | 2002-09-19 | Nikko Materials Company, Limited | Poudre d'oxyde d'etain destinee a une cible de pulverisation ito, procede de fabrication de cette poudre, cible de pulverisation de corps fritte destinee a la production d'une couche ito, et procede de fabrication de cette cible |
JP4060187B2 (ja) * | 2001-03-28 | 2008-03-12 | 日鉱金属株式会社 | 酸化インジウム中に錫が固溶したito粉末の製造方法及びitoターゲットの製造方法 |
JP2003171761A (ja) * | 2001-12-10 | 2003-06-20 | Nikko Materials Co Ltd | ノジュール発生量の少ないitoスパッタリングターゲット |
-
2004
- 2004-08-04 WO PCT/JP2004/011153 patent/WO2005019492A1/ja active Application Filing
- 2004-08-04 US US10/569,068 patent/US7504351B2/en active Active
- 2004-08-04 KR KR1020067003399A patent/KR100727242B1/ko active IP Right Grant
- 2004-08-04 CN CNB2004800238565A patent/CN100489150C/zh active Active
- 2004-08-04 JP JP2005513260A patent/JP4813182B2/ja active Active
- 2004-08-18 TW TW093124769A patent/TWI290178B/zh active
Also Published As
Publication number | Publication date |
---|---|
US7504351B2 (en) | 2009-03-17 |
JPWO2005019492A1 (ja) | 2007-11-22 |
KR20060038472A (ko) | 2006-05-03 |
TWI290178B (en) | 2007-11-21 |
US20060289303A1 (en) | 2006-12-28 |
KR100727242B1 (ko) | 2007-06-11 |
CN100489150C (zh) | 2009-05-20 |
TW200510554A (en) | 2005-03-16 |
JP4813182B2 (ja) | 2011-11-09 |
WO2005019492A1 (ja) | 2005-03-03 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corporation Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corporation |
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CP01 | Change in the name or title of a patent holder |