CN1822395A - 半导体器件、驱动电路以及半导体器件的制造方法 - Google Patents
半导体器件、驱动电路以及半导体器件的制造方法 Download PDFInfo
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- CN1822395A CN1822395A CNA2006100090287A CN200610009028A CN1822395A CN 1822395 A CN1822395 A CN 1822395A CN A2006100090287 A CNA2006100090287 A CN A2006100090287A CN 200610009028 A CN200610009028 A CN 200610009028A CN 1822395 A CN1822395 A CN 1822395A
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- 238000004519 manufacturing process Methods 0.000 title claims description 86
- 239000012535 impurity Substances 0.000 claims abstract description 468
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims description 124
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 230000008676 import Effects 0.000 claims description 8
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- 238000009413 insulation Methods 0.000 description 6
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- 238000009826 distribution Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
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- 238000000926 separation method Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
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- 238000005530 etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005038705 | 2005-02-16 | ||
JP2005038705 | 2005-02-16 | ||
JP2005-038705 | 2005-02-16 | ||
JP2005374306 | 2005-12-27 | ||
JP2005374306A JP2006261639A (ja) | 2005-02-16 | 2005-12-27 | 半導体装置、ドライバ回路及び半導体装置の製造方法 |
JP2005-374306 | 2005-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1822395A true CN1822395A (zh) | 2006-08-23 |
CN1822395B CN1822395B (zh) | 2010-05-12 |
Family
ID=36814808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100090287A Expired - Fee Related CN1822395B (zh) | 2005-02-16 | 2006-02-16 | 半导体器件、驱动电路以及半导体器件的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7339236B2 (zh) |
JP (1) | JP2006261639A (zh) |
CN (1) | CN1822395B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840916A (zh) * | 2009-03-12 | 2010-09-22 | 英飞凌科技股份有限公司 | 具有场效应管的集成电路和制造方法 |
CN102646706A (zh) * | 2011-02-17 | 2012-08-22 | 立锜科技股份有限公司 | 高压元件及其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200812081A (en) * | 2006-08-30 | 2008-03-01 | Advanced Analog Technology Inc | High voltage device and manufacturing method thereof |
JP5194594B2 (ja) * | 2007-07-10 | 2013-05-08 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP5410012B2 (ja) * | 2007-09-28 | 2014-02-05 | ローム株式会社 | 半導体装置 |
JP5670808B2 (ja) * | 2011-04-04 | 2015-02-18 | 株式会社豊田中央研究所 | 横型igbt |
JP5734725B2 (ja) * | 2011-04-27 | 2015-06-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8901642B2 (en) | 2012-03-07 | 2014-12-02 | Infineon Technologies Austria Ag | Charge compensation semiconductor device |
US8866222B2 (en) | 2012-03-07 | 2014-10-21 | Infineon Technologies Austria Ag | Charge compensation semiconductor device |
US9435833B2 (en) * | 2014-07-23 | 2016-09-06 | Freescale Semiconductor, Inc. | Resistance detection for integrated circuit driver based on parasitic inductance |
KR102458310B1 (ko) | 2018-06-19 | 2022-10-24 | 삼성전자주식회사 | 집적회로 소자 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5994739A (en) * | 1990-07-02 | 1999-11-30 | Kabushiki Kaisha Toshiba | Integrated circuit device |
JP3435173B2 (ja) * | 1992-07-10 | 2003-08-11 | 株式会社日立製作所 | 半導体装置 |
US5656844A (en) * | 1995-07-27 | 1997-08-12 | Motorola, Inc. | Semiconductor-on-insulator transistor having a doping profile for fully-depleted operation |
JPH1187728A (ja) | 1997-09-12 | 1999-03-30 | Toshiba Corp | 半導体装置 |
JP2000252467A (ja) * | 1999-03-04 | 2000-09-14 | Fuji Electric Co Ltd | 高耐圧横型半導体装置 |
JP4929538B2 (ja) * | 2001-06-29 | 2012-05-09 | 株式会社デンソー | 半導体装置の製造方法 |
JP3783156B2 (ja) * | 2001-10-17 | 2006-06-07 | 株式会社日立製作所 | 半導体装置 |
JP2004172541A (ja) * | 2002-11-22 | 2004-06-17 | Renesas Technology Corp | 半導体装置の製造方法 |
JP3479066B2 (ja) | 2002-12-09 | 2003-12-15 | シャープ株式会社 | Soi構造の半導体装置及びその製造方法 |
JP4387291B2 (ja) * | 2004-12-06 | 2009-12-16 | パナソニック株式会社 | 横型半導体デバイスおよびその製造方法 |
US7973361B2 (en) * | 2005-03-30 | 2011-07-05 | Panasonic Corporation | High breakdown voltage semiconductor device and fabrication method of the same |
KR100761825B1 (ko) * | 2005-10-25 | 2007-09-28 | 삼성전자주식회사 | 횡형 디모스 (ldmos) 트랜지스터 및 그 제조 방법 |
-
2005
- 2005-12-27 JP JP2005374306A patent/JP2006261639A/ja active Pending
-
2006
- 2006-02-13 US US11/352,344 patent/US7339236B2/en not_active Expired - Fee Related
- 2006-02-16 CN CN2006100090287A patent/CN1822395B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840916A (zh) * | 2009-03-12 | 2010-09-22 | 英飞凌科技股份有限公司 | 具有场效应管的集成电路和制造方法 |
CN101840916B (zh) * | 2009-03-12 | 2014-03-26 | 英飞凌科技股份有限公司 | 具有场效应管的集成电路和制造方法 |
CN102646706A (zh) * | 2011-02-17 | 2012-08-22 | 立锜科技股份有限公司 | 高压元件及其制造方法 |
CN102646706B (zh) * | 2011-02-17 | 2014-09-24 | 立锜科技股份有限公司 | 高压元件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060180862A1 (en) | 2006-08-17 |
JP2006261639A (ja) | 2006-09-28 |
US7339236B2 (en) | 2008-03-04 |
CN1822395B (zh) | 2010-05-12 |
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