CN1809918A - 一种柔性电子器件的制造方法和柔性器件 - Google Patents
一种柔性电子器件的制造方法和柔性器件 Download PDFInfo
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- CN1809918A CN1809918A CNA200480008676XA CN200480008676A CN1809918A CN 1809918 A CN1809918 A CN 1809918A CN A200480008676X A CNA200480008676X A CN A200480008676XA CN 200480008676 A CN200480008676 A CN 200480008676A CN 1809918 A CN1809918 A CN 1809918A
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
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- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100879.0 | 2003-04-02 | ||
EP03100879 | 2003-04-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1809918A true CN1809918A (zh) | 2006-07-26 |
CN100446212C CN100446212C (zh) | 2008-12-24 |
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EP (1) | EP1629531A2 (zh) |
JP (1) | JP2006522475A (zh) |
KR (1) | KR20050116844A (zh) |
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WO (1) | WO2004088728A2 (zh) |
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- 2004-03-30 US US10/551,309 patent/US7951687B2/en not_active Expired - Fee Related
- 2004-03-30 KR KR1020057018723A patent/KR20050116844A/ko not_active Application Discontinuation
- 2004-03-30 JP JP2006506788A patent/JP2006522475A/ja active Pending
- 2004-03-30 WO PCT/IB2004/050357 patent/WO2004088728A2/en active Application Filing
- 2004-03-30 EP EP04724341A patent/EP1629531A2/en not_active Withdrawn
-
2011
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100428407C (zh) * | 2007-01-04 | 2008-10-22 | 友达光电股份有限公司 | 可挠性阵列基板的制造方法 |
CN100466167C (zh) * | 2007-02-05 | 2009-03-04 | 友达光电股份有限公司 | 可挠性主动元件阵列基板的制造方法 |
CN102184892A (zh) * | 2011-03-19 | 2011-09-14 | 福州华映视讯有限公司 | 用于软性显示器的软板制作方法 |
CN103715136A (zh) * | 2012-10-04 | 2014-04-09 | 三星显示有限公司 | 柔性显示装置的制造方法 |
CN103715136B (zh) * | 2012-10-04 | 2018-12-14 | 三星显示有限公司 | 柔性显示装置的制造方法 |
US9484552B2 (en) | 2013-12-17 | 2016-11-01 | Chunghwa Picture Tubes, Ltd. | Manufacturing method of flexible device substrate |
CN106061737A (zh) * | 2013-12-19 | 2016-10-26 | 加利福尼亚大学董事会 | 可扩展性制造技术和电路封装设备 |
CN103700672A (zh) * | 2013-12-24 | 2014-04-02 | 华映视讯(吴江)有限公司 | 可挠性组件基板以及其制作方法 |
CN105711099A (zh) * | 2016-03-28 | 2016-06-29 | 华中科技大学 | 一种多工位协同的柔性电子制备系统及方法 |
CN105711099B (zh) * | 2016-03-28 | 2017-12-12 | 华中科技大学 | 一种多工位协同的柔性电子制备系统及方法 |
Also Published As
Publication number | Publication date |
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US7951687B2 (en) | 2011-05-31 |
US20060194363A1 (en) | 2006-08-31 |
WO2004088728A3 (en) | 2005-10-20 |
KR20050116844A (ko) | 2005-12-13 |
US9362511B2 (en) | 2016-06-07 |
JP2006522475A (ja) | 2006-09-28 |
US20110227084A1 (en) | 2011-09-22 |
WO2004088728A2 (en) | 2004-10-14 |
CN100446212C (zh) | 2008-12-24 |
EP1629531A2 (en) | 2006-03-01 |
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