CN1806319A - 金属绝缘体半导体晶体管和互补金属氧化物半导体晶体管 - Google Patents
金属绝缘体半导体晶体管和互补金属氧化物半导体晶体管 Download PDFInfo
- Publication number
- CN1806319A CN1806319A CNA2004800162710A CN200480016271A CN1806319A CN 1806319 A CN1806319 A CN 1806319A CN A2004800162710 A CNA2004800162710 A CN A2004800162710A CN 200480016271 A CN200480016271 A CN 200480016271A CN 1806319 A CN1806319 A CN 1806319A
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- Prior art keywords
- mos transistor
- channel mos
- face
- transistor
- insulation layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 claims abstract description 79
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 88
- 239000010703 silicon Substances 0.000 claims description 88
- 238000009413 insulation Methods 0.000 claims description 66
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- 238000007254 oxidation reaction Methods 0.000 claims description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 18
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- 238000000034 method Methods 0.000 description 41
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- 230000005540 biological transmission Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
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- 238000000605 extraction Methods 0.000 description 4
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- 150000002500 ions Chemical class 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
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- 238000010521 absorption reaction Methods 0.000 description 2
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- 239000012895 dilution Substances 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 150000003376 silicon Chemical class 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP170118/2003 | 2003-06-13 | ||
JP2003170118A JP4723797B2 (ja) | 2003-06-13 | 2003-06-13 | Cmosトランジスタ |
PCT/JP2004/008218 WO2004112121A1 (ja) | 2003-06-13 | 2004-06-11 | Misトランジスタ及びcmosトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1806319A true CN1806319A (zh) | 2006-07-19 |
CN1806319B CN1806319B (zh) | 2011-04-06 |
Family
ID=33549410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800162710A Expired - Fee Related CN1806319B (zh) | 2003-06-13 | 2004-06-11 | 金属绝缘体半导体晶体管和互补金属氧化物半导体晶体管 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060278909A1 (zh) |
EP (1) | EP1635385A4 (zh) |
JP (1) | JP4723797B2 (zh) |
KR (1) | KR100769067B1 (zh) |
CN (1) | CN1806319B (zh) |
TW (1) | TWI331399B (zh) |
WO (1) | WO2004112121A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112071863A (zh) * | 2020-09-04 | 2020-12-11 | Tcl华星光电技术有限公司 | 一种阵列基板 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100428476C (zh) * | 2006-07-10 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | 互补金属氧化物半导体器件 |
JPWO2008007748A1 (ja) * | 2006-07-13 | 2009-12-10 | 国立大学法人東北大学 | 半導体装置 |
JP5452211B2 (ja) * | 2009-12-21 | 2014-03-26 | ルネサスエレクトロニクス株式会社 | 半導体装置、および、半導体装置の製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US655451A (en) * | 1899-11-22 | 1900-08-07 | Morgan & Wright | Valve for pneumatic tires. |
EP0261666B1 (en) * | 1986-09-24 | 1992-08-05 | Nec Corporation | Complementary type insulated gate field effect transistor |
JPS63228662A (ja) * | 1987-03-18 | 1988-09-22 | Toshiba Corp | 相補型mos半導体装置の製造方法 |
JPH01276669A (ja) * | 1988-04-27 | 1989-11-07 | Toshiba Corp | 半導体装置 |
JPH03155165A (ja) * | 1989-11-14 | 1991-07-03 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH05136382A (ja) * | 1991-11-08 | 1993-06-01 | Nec Corp | 相補型ゲートアレイ |
US5391506A (en) * | 1992-01-31 | 1995-02-21 | Kawasaki Steel Corporation | Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
JPH07249768A (ja) * | 1994-03-14 | 1995-09-26 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
FR2720191B1 (fr) | 1994-05-18 | 1996-10-18 | Michel Haond | Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant. |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH0923011A (ja) * | 1995-07-05 | 1997-01-21 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5932911A (en) * | 1996-12-13 | 1999-08-03 | Advanced Micro Devices, Inc. | Bar field effect transistor |
US6245615B1 (en) * | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4044276B2 (ja) | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6649480B2 (en) | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
JP2002359293A (ja) * | 2001-05-31 | 2002-12-13 | Toshiba Corp | 半導体装置 |
EP1278234B1 (en) * | 2001-07-19 | 2012-01-11 | STMicroelectronics Srl | MOS transistor and method of manufacturing |
US6555451B1 (en) * | 2001-09-28 | 2003-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Method for making shallow diffusion junctions in semiconductors using elemental doping |
US6657259B2 (en) | 2001-12-04 | 2003-12-02 | International Business Machines Corporation | Multiple-plane FinFET CMOS |
JP4265882B2 (ja) | 2001-12-13 | 2009-05-20 | 忠弘 大見 | 相補型mis装置 |
US6974729B2 (en) * | 2002-07-16 | 2005-12-13 | Interuniversitair Microelektronica Centrum (Imec) | Integrated semiconductor fin device and a method for manufacturing such device |
JP2005056870A (ja) * | 2003-06-12 | 2005-03-03 | Toyota Industries Corp | ダイレクトコンバージョン受信の周波数変換回路、その半導体集積回路及びダイレクトコンバージョン受信機 |
JP2005006127A (ja) * | 2003-06-12 | 2005-01-06 | Toyota Industries Corp | ミキサ回路 |
JP2008002226A (ja) | 2006-06-26 | 2008-01-10 | Sekisui Jushi Co Ltd | フェンス |
-
2003
- 2003-06-13 JP JP2003170118A patent/JP4723797B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-11 EP EP04745812A patent/EP1635385A4/en not_active Withdrawn
- 2004-06-11 TW TW093116779A patent/TWI331399B/zh not_active IP Right Cessation
- 2004-06-11 CN CN2004800162710A patent/CN1806319B/zh not_active Expired - Fee Related
- 2004-06-11 KR KR1020057023974A patent/KR100769067B1/ko not_active IP Right Cessation
- 2004-06-11 WO PCT/JP2004/008218 patent/WO2004112121A1/ja active Application Filing
- 2004-06-11 US US10/560,706 patent/US20060278909A1/en not_active Abandoned
-
2009
- 2009-10-22 US US12/604,015 patent/US8314449B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112071863A (zh) * | 2020-09-04 | 2020-12-11 | Tcl华星光电技术有限公司 | 一种阵列基板 |
US12002814B2 (en) | 2020-09-04 | 2024-06-04 | Tcl China Star Optoelectronics Technology Co., Ltd. | Array substrate and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW200511581A (en) | 2005-03-16 |
US20100038722A1 (en) | 2010-02-18 |
WO2004112121A1 (ja) | 2004-12-23 |
KR20060019593A (ko) | 2006-03-03 |
EP1635385A4 (en) | 2010-09-22 |
US8314449B2 (en) | 2012-11-20 |
TWI331399B (en) | 2010-10-01 |
US20060278909A1 (en) | 2006-12-14 |
EP1635385A1 (en) | 2006-03-15 |
KR100769067B1 (ko) | 2007-10-22 |
CN1806319B (zh) | 2011-04-06 |
JP2005005625A (ja) | 2005-01-06 |
JP4723797B2 (ja) | 2011-07-13 |
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ASS | Succession or assignment of patent right |
Owner name: NIIGATA SEIMITSU CO., LTD.; APPLICANT Free format text: FORMER OWNER: TOYOTA JIDOSHOKKI KK; APPLICANT Effective date: 20070727 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20070727 Address after: Niigata Prefecture, Japan Applicant after: Niigato Precision Co., Ltd. Co-applicant after: Tadahiro Ohmi Address before: Aichi Applicant before: Toyoda Automatic Loom Works, Ltd. Co-applicant before: Niigato Precision Co., Ltd. Co-applicant before: Tadahiro Ohmi |
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