CN1806319B - 金属绝缘体半导体晶体管和互补金属氧化物半导体晶体管 - Google Patents
金属绝缘体半导体晶体管和互补金属氧化物半导体晶体管 Download PDFInfo
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- CN1806319B CN1806319B CN2004800162710A CN200480016271A CN1806319B CN 1806319 B CN1806319 B CN 1806319B CN 2004800162710 A CN2004800162710 A CN 2004800162710A CN 200480016271 A CN200480016271 A CN 200480016271A CN 1806319 B CN1806319 B CN 1806319B
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- mos transistor
- channel mos
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- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000013078 crystal Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 83
- 239000010703 silicon Substances 0.000 claims description 83
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 abstract description 16
- 239000012212 insulator Substances 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 description 51
- 238000000034 method Methods 0.000 description 41
- 230000008569 process Effects 0.000 description 29
- 230000003647 oxidation Effects 0.000 description 27
- 238000007254 oxidation reaction Methods 0.000 description 27
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000010606 normalization Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 206010020852 Hypertonia Diseases 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP170118/2003 | 2003-06-13 | ||
JP2003170118A JP4723797B2 (ja) | 2003-06-13 | 2003-06-13 | Cmosトランジスタ |
PCT/JP2004/008218 WO2004112121A1 (ja) | 2003-06-13 | 2004-06-11 | Misトランジスタ及びcmosトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1806319A CN1806319A (zh) | 2006-07-19 |
CN1806319B true CN1806319B (zh) | 2011-04-06 |
Family
ID=33549410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800162710A Expired - Fee Related CN1806319B (zh) | 2003-06-13 | 2004-06-11 | 金属绝缘体半导体晶体管和互补金属氧化物半导体晶体管 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060278909A1 (zh) |
EP (1) | EP1635385A4 (zh) |
JP (1) | JP4723797B2 (zh) |
KR (1) | KR100769067B1 (zh) |
CN (1) | CN1806319B (zh) |
TW (1) | TWI331399B (zh) |
WO (1) | WO2004112121A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100428476C (zh) * | 2006-07-10 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | 互补金属氧化物半导体器件 |
CN101490823B (zh) * | 2006-07-13 | 2012-03-07 | 国立大学法人东北大学 | 半导体装置 |
JP5452211B2 (ja) * | 2009-12-21 | 2014-03-26 | ルネサスエレクトロニクス株式会社 | 半導体装置、および、半導体装置の製造方法 |
CN112071863A (zh) | 2020-09-04 | 2020-12-11 | Tcl华星光电技术有限公司 | 一种阵列基板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391506A (en) * | 1992-01-31 | 1995-02-21 | Kawasaki Steel Corporation | Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
CN1389920A (zh) * | 2001-05-31 | 2003-01-08 | 株式会社东芝 | 半导体装置 |
US20030102497A1 (en) * | 2001-12-04 | 2003-06-05 | International Business Machines Corporation | Multiple-plane finFET CMOS |
CN1500291A (zh) * | 2001-12-13 | 2004-05-26 | ���������ƴ���ʽ���� | 互补型mis器件 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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US655451A (en) * | 1899-11-22 | 1900-08-07 | Morgan & Wright | Valve for pneumatic tires. |
EP0261666B1 (en) * | 1986-09-24 | 1992-08-05 | Nec Corporation | Complementary type insulated gate field effect transistor |
JPS63228662A (ja) * | 1987-03-18 | 1988-09-22 | Toshiba Corp | 相補型mos半導体装置の製造方法 |
JPH01276669A (ja) * | 1988-04-27 | 1989-11-07 | Toshiba Corp | 半導体装置 |
JPH03155165A (ja) * | 1989-11-14 | 1991-07-03 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH05136382A (ja) * | 1991-11-08 | 1993-06-01 | Nec Corp | 相補型ゲートアレイ |
JPH07249768A (ja) * | 1994-03-14 | 1995-09-26 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
FR2720191B1 (fr) * | 1994-05-18 | 1996-10-18 | Michel Haond | Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant. |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH0923011A (ja) * | 1995-07-05 | 1997-01-21 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5932911A (en) * | 1996-12-13 | 1999-08-03 | Advanced Micro Devices, Inc. | Bar field effect transistor |
US6245615B1 (en) * | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4044276B2 (ja) | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6649480B2 (en) * | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
EP1278234B1 (en) * | 2001-07-19 | 2012-01-11 | STMicroelectronics Srl | MOS transistor and method of manufacturing |
US6555451B1 (en) * | 2001-09-28 | 2003-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Method for making shallow diffusion junctions in semiconductors using elemental doping |
US6974729B2 (en) * | 2002-07-16 | 2005-12-13 | Interuniversitair Microelektronica Centrum (Imec) | Integrated semiconductor fin device and a method for manufacturing such device |
JP2005056870A (ja) * | 2003-06-12 | 2005-03-03 | Toyota Industries Corp | ダイレクトコンバージョン受信の周波数変換回路、その半導体集積回路及びダイレクトコンバージョン受信機 |
JP2005006127A (ja) * | 2003-06-12 | 2005-01-06 | Toyota Industries Corp | ミキサ回路 |
JP2008002226A (ja) | 2006-06-26 | 2008-01-10 | Sekisui Jushi Co Ltd | フェンス |
-
2003
- 2003-06-13 JP JP2003170118A patent/JP4723797B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-11 EP EP04745812A patent/EP1635385A4/en not_active Withdrawn
- 2004-06-11 CN CN2004800162710A patent/CN1806319B/zh not_active Expired - Fee Related
- 2004-06-11 TW TW093116779A patent/TWI331399B/zh not_active IP Right Cessation
- 2004-06-11 US US10/560,706 patent/US20060278909A1/en not_active Abandoned
- 2004-06-11 KR KR1020057023974A patent/KR100769067B1/ko not_active IP Right Cessation
- 2004-06-11 WO PCT/JP2004/008218 patent/WO2004112121A1/ja active Application Filing
-
2009
- 2009-10-22 US US12/604,015 patent/US8314449B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391506A (en) * | 1992-01-31 | 1995-02-21 | Kawasaki Steel Corporation | Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
CN1389920A (zh) * | 2001-05-31 | 2003-01-08 | 株式会社东芝 | 半导体装置 |
US20030102497A1 (en) * | 2001-12-04 | 2003-06-05 | International Business Machines Corporation | Multiple-plane finFET CMOS |
CN1500291A (zh) * | 2001-12-13 | 2004-05-26 | ���������ƴ���ʽ���� | 互补型mis器件 |
Non-Patent Citations (4)
Title |
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JP特开2002-261091A 2002.09.13 |
JP特开平7-249768A 1995.09.26 |
JP特开平8-264764A 1996.10.11 |
说明书第4栏第58行-第9栏第20行、附图1-13C. |
Also Published As
Publication number | Publication date |
---|---|
US20060278909A1 (en) | 2006-12-14 |
US20100038722A1 (en) | 2010-02-18 |
TWI331399B (en) | 2010-10-01 |
CN1806319A (zh) | 2006-07-19 |
EP1635385A1 (en) | 2006-03-15 |
TW200511581A (en) | 2005-03-16 |
US8314449B2 (en) | 2012-11-20 |
WO2004112121A1 (ja) | 2004-12-23 |
KR100769067B1 (ko) | 2007-10-22 |
KR20060019593A (ko) | 2006-03-03 |
JP2005005625A (ja) | 2005-01-06 |
JP4723797B2 (ja) | 2011-07-13 |
EP1635385A4 (en) | 2010-09-22 |
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