CN1777691B - 用于减少处理过程中基片背部的淀积的方法和装置 - Google Patents

用于减少处理过程中基片背部的淀积的方法和装置 Download PDF

Info

Publication number
CN1777691B
CN1777691B CN2004800106833A CN200480010683A CN1777691B CN 1777691 B CN1777691 B CN 1777691B CN 2004800106833 A CN2004800106833 A CN 2004800106833A CN 200480010683 A CN200480010683 A CN 200480010683A CN 1777691 B CN1777691 B CN 1777691B
Authority
CN
China
Prior art keywords
substrate
focusing ring
secondary focus
focus rings
focus ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2004800106833A
Other languages
English (en)
Chinese (zh)
Other versions
CN1777691A (zh
Inventor
日向邦彦
畑村安则
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1777691A publication Critical patent/CN1777691A/zh
Application granted granted Critical
Publication of CN1777691B publication Critical patent/CN1777691B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN2004800106833A 2003-03-21 2004-03-17 用于减少处理过程中基片背部的淀积的方法和装置 Expired - Fee Related CN1777691B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45622903P 2003-03-21 2003-03-21
US60/456,229 2003-03-21
PCT/US2004/006076 WO2004095529A2 (en) 2003-03-21 2004-03-17 Method and apparatus for reducing substrate backside deposition during processing

Publications (2)

Publication Number Publication Date
CN1777691A CN1777691A (zh) 2006-05-24
CN1777691B true CN1777691B (zh) 2011-11-23

Family

ID=33310656

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800106833A Expired - Fee Related CN1777691B (zh) 2003-03-21 2004-03-17 用于减少处理过程中基片背部的淀积的方法和装置

Country Status (6)

Country Link
US (1) US8382942B2 (enExample)
JP (1) JP4991286B2 (enExample)
KR (1) KR101141488B1 (enExample)
CN (1) CN1777691B (enExample)
TW (1) TWI252505B (enExample)
WO (1) WO2004095529A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
US20050103267A1 (en) * 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
CN101447394B (zh) * 2007-11-28 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种改善半导体制程中加工件背面污染的方法
US20090151870A1 (en) * 2007-12-14 2009-06-18 Tokyo Electron Limited Silicon carbide focus ring for plasma etching system
JP5088483B2 (ja) * 2007-12-18 2012-12-05 三菱マテリアル株式会社 ウエハを支持するためのプラズマエッチング装置用複合シリコンリング
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
CN101754565B (zh) * 2008-12-03 2012-07-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种电极组件及应用该电极组件的等离子体处理设备
CN101989544B (zh) * 2009-08-07 2012-05-23 中微半导体设备(上海)有限公司 一种可减少基片背面聚合物的结构
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
CN101974738B (zh) * 2010-11-19 2012-10-31 理想能源设备有限公司 等离子体增强化学气相沉积装置
JP2013016532A (ja) * 2011-06-30 2013-01-24 Tokyo Electron Ltd シリコン製部品の製造方法及びエッチング処理装置用のシリコン製部品
CN102522305B (zh) * 2011-12-27 2015-01-07 中微半导体设备(上海)有限公司 等离子体处理装置及聚焦环组件
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
CN103377979B (zh) * 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
TWI449080B (zh) * 2012-07-25 2014-08-11 Au Optronics Corp 電漿反應機台
US20140034242A1 (en) * 2012-07-31 2014-02-06 Lam Research Corporation Edge ring assembly for plasma processing chamber and method of manufacture thereof
US9589818B2 (en) * 2012-12-20 2017-03-07 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
US9428833B1 (en) 2015-05-29 2016-08-30 Lam Research Corporation Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal
US10109464B2 (en) * 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
KR102251664B1 (ko) 2017-03-31 2021-05-14 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 플라즈마 처리 장치를 위한 페디스털 조립체
CN110546733B (zh) 2017-03-31 2022-10-11 玛特森技术公司 在处理腔室中防止工件上的材料沉积
JP7105666B2 (ja) 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
JP7175160B2 (ja) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 基板処理装置
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
TWI905899B (zh) * 2019-09-26 2025-11-21 日商東京威力科創股份有限公司 電漿處理裝置、基板支持器及環構造
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
CN111074236A (zh) * 2019-12-27 2020-04-28 重庆康佳光电技术研究院有限公司 一种化学气相沉积装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN116114047B (zh) * 2021-02-12 2024-12-31 朗姆研究公司 在不影响c形护罩的机械强度或使用寿命的情况下为等离子体均匀性进行c形护罩修改

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556500A (en) * 1994-03-03 1996-09-17 Tokyo Electron Limited Plasma etching apparatus
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5411624A (en) * 1991-07-23 1995-05-02 Tokyo Electron Limited Magnetron plasma processing apparatus
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
JP2990551B2 (ja) * 1992-01-16 1999-12-13 東京エレクトロン株式会社 成膜処理装置
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
TW434745B (en) * 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
JP3162955B2 (ja) * 1995-06-13 2001-05-08 東京エレクトロン株式会社 プラズマ処理装置
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US5740009A (en) * 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection
JP3424903B2 (ja) * 1997-01-23 2003-07-07 東京エレクトロン株式会社 プラズマ処理装置
US5922133A (en) * 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6464843B1 (en) * 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6287974B1 (en) * 1999-06-30 2001-09-11 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
TW484187B (en) * 2000-02-14 2002-04-21 Tokyo Electron Ltd Apparatus and method for plasma treatment
JP2001230239A (ja) * 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
JP4559595B2 (ja) * 2000-07-17 2010-10-06 東京エレクトロン株式会社 被処理体の載置装置及びプラズマ処理装置
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP3393118B2 (ja) 2000-12-21 2003-04-07 株式会社半導体先端テクノロジーズ プラズマエッチング装置および半導体装置の製造方法
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
TW541586B (en) * 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
KR100422446B1 (ko) * 2001-07-12 2004-03-12 삼성전자주식회사 건식식각장치의 이그저스트링
JP2003060019A (ja) * 2001-08-13 2003-02-28 Hitachi Ltd ウエハステージ
US20030106646A1 (en) * 2001-12-11 2003-06-12 Applied Materials, Inc. Plasma chamber insert ring
JP4035627B2 (ja) * 2001-12-13 2008-01-23 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング機構
WO2003054947A1 (fr) * 2001-12-13 2003-07-03 Tokyo Electron Limited Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
TW554465B (en) * 2002-08-27 2003-09-21 Winbond Electronics Corp Apparatus for supporting wafer in semiconductor process
KR100657054B1 (ko) * 2003-01-07 2006-12-13 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 포커스 링
US7381293B2 (en) * 2003-01-09 2008-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Convex insert ring for etch chamber
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
US20040241995A1 (en) * 2003-03-27 2004-12-02 Matsushita Electric Industrial Co., Ltd. Etching apparatus and etching method
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP4640922B2 (ja) * 2003-09-05 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US7338578B2 (en) * 2004-01-20 2008-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
WO2006049076A1 (ja) * 2004-11-02 2006-05-11 Matsushita Electric Industrial Co., Ltd. プラズマ処理方法およびプラズマ処理装置
US20060151116A1 (en) * 2005-01-12 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focus rings, apparatus in chamber, contact hole and method of forming contact hole
JP4336320B2 (ja) * 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 ウエハホルダ
US8038837B2 (en) * 2005-09-02 2011-10-18 Tokyo Electron Limited Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member
JP4783094B2 (ja) * 2005-09-02 2011-09-28 東京エレクトロン株式会社 プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材
US7988814B2 (en) * 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
KR20080001164A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법
US20080066868A1 (en) * 2006-09-19 2008-03-20 Tokyo Electron Limited Focus ring and plasma processing apparatus
KR100809957B1 (ko) * 2006-09-20 2008-03-07 삼성전자주식회사 반도체 식각장치
JP5102500B2 (ja) * 2007-01-22 2012-12-19 東京エレクトロン株式会社 基板処理装置
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
JP5204673B2 (ja) * 2009-01-14 2013-06-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布の制御方法
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
JP2011176228A (ja) * 2010-02-25 2011-09-08 Oki Semiconductor Co Ltd プラズマ処理装置及びフォーカスリング
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556500A (en) * 1994-03-03 1996-09-17 Tokyo Electron Limited Plasma etching apparatus
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation

Also Published As

Publication number Publication date
TWI252505B (en) 2006-04-01
KR101141488B1 (ko) 2012-05-03
CN1777691A (zh) 2006-05-24
TW200423212A (en) 2004-11-01
WO2004095529A3 (en) 2005-04-21
KR20050114248A (ko) 2005-12-05
WO2004095529A2 (en) 2004-11-04
US8382942B2 (en) 2013-02-26
JP4991286B2 (ja) 2012-08-01
JP2006523382A (ja) 2006-10-12
US20070000614A1 (en) 2007-01-04

Similar Documents

Publication Publication Date Title
US8382942B2 (en) Method and apparatus for reducing substrate backside deposition during processing
CN100555550C (zh) 等离子加工系统中的改进的上电极板的方法和装置
US7754997B2 (en) Apparatus and method to confine plasma and reduce flow resistance in a plasma
KR100284571B1 (ko) 세라믹 라이닝을 이용하여 cvd챔버 내의 잔류물 축적을 감소시키는 장치 및 방법
CN100466153C (zh) 等离子加工系统中用于改进的沉积罩的方法和设备
CN100474521C (zh) 温控热边缘环组件，包含该组件的装置及其用途
US7854820B2 (en) Upper electrode backing member with particle reducing features
US7001482B2 (en) Method and apparatus for improved focus ring
US6096161A (en) Dry etching apparatus having means for preventing micro-arcing
KR101480738B1 (ko) 환형 배플
US20040129226A1 (en) Method and apparatus for an improved focus ring in a plasma processing system
JPWO1998046808A1 (ja) 処理装置
TW201535466A (zh) 電漿處理室中具有能延伸彈性密封件的使用壽命之適當尺寸的邊緣環
WO2004030012A2 (en) Improved bellows shield in a plasma processing system,and method of manufacture of such bellows shield
KR102773631B1 (ko) 플라즈마 챔버에서 사용하기 위한 저 저항 구속 라이너
JPH0922934A (ja) 処理中の基板上にプラズマを集中するための装置及び方法
CN114695046B (zh) 一种等离子体处理装置和处理方法
KR200426498Y1 (ko) 플라즈마 공정 챔버에서 이용하기 위한 프로세스 키트

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111123

Termination date: 20180317

CF01 Termination of patent right due to non-payment of annual fee