JP4991286B2 - 処理中の基板裏面堆積を減らす方法および装置。 - Google Patents

処理中の基板裏面堆積を減らす方法および装置。 Download PDF

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Publication number
JP4991286B2
JP4991286B2 JP2006508912A JP2006508912A JP4991286B2 JP 4991286 B2 JP4991286 B2 JP 4991286B2 JP 2006508912 A JP2006508912 A JP 2006508912A JP 2006508912 A JP2006508912 A JP 2006508912A JP 4991286 B2 JP4991286 B2 JP 4991286B2
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Prior art keywords
focus ring
substrate
substrate holder
lip
secondary focus
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Expired - Fee Related
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JP2006508912A
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Japanese (ja)
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JP2006523382A5 (enExample
JP2006523382A (ja
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安則 畑村
邦彦 日向
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006508912A 2003-03-21 2004-03-17 処理中の基板裏面堆積を減らす方法および装置。 Expired - Fee Related JP4991286B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45622903P 2003-03-21 2003-03-21
US60/456,229 2003-03-21
PCT/US2004/006076 WO2004095529A2 (en) 2003-03-21 2004-03-17 Method and apparatus for reducing substrate backside deposition during processing

Publications (3)

Publication Number Publication Date
JP2006523382A JP2006523382A (ja) 2006-10-12
JP2006523382A5 JP2006523382A5 (enExample) 2007-05-10
JP4991286B2 true JP4991286B2 (ja) 2012-08-01

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Family Applications (1)

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JP2006508912A Expired - Fee Related JP4991286B2 (ja) 2003-03-21 2004-03-17 処理中の基板裏面堆積を減らす方法および装置。

Country Status (6)

Country Link
US (1) US8382942B2 (enExample)
JP (1) JP4991286B2 (enExample)
KR (1) KR101141488B1 (enExample)
CN (1) CN1777691B (enExample)
TW (1) TWI252505B (enExample)
WO (1) WO2004095529A2 (enExample)

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KR102251664B1 (ko) 2017-03-31 2021-05-14 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 플라즈마 처리 장치를 위한 페디스털 조립체
CN110546733B (zh) 2017-03-31 2022-10-11 玛特森技术公司 在处理腔室中防止工件上的材料沉积
JP7105666B2 (ja) 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
JP7175160B2 (ja) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 基板処理装置
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
TWI905899B (zh) * 2019-09-26 2025-11-21 日商東京威力科創股份有限公司 電漿處理裝置、基板支持器及環構造
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
CN111074236A (zh) * 2019-12-27 2020-04-28 重庆康佳光电技术研究院有限公司 一种化学气相沉积装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN116114047B (zh) * 2021-02-12 2024-12-31 朗姆研究公司 在不影响c形护罩的机械强度或使用寿命的情况下为等离子体均匀性进行c形护罩修改

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Also Published As

Publication number Publication date
TWI252505B (en) 2006-04-01
KR101141488B1 (ko) 2012-05-03
CN1777691A (zh) 2006-05-24
TW200423212A (en) 2004-11-01
WO2004095529A3 (en) 2005-04-21
CN1777691B (zh) 2011-11-23
KR20050114248A (ko) 2005-12-05
WO2004095529A2 (en) 2004-11-04
US8382942B2 (en) 2013-02-26
JP2006523382A (ja) 2006-10-12
US20070000614A1 (en) 2007-01-04

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