CN1711369A - 用于真空处理两维加长基片的装置及加工这种基片的方法 - Google Patents

用于真空处理两维加长基片的装置及加工这种基片的方法 Download PDF

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CN1711369A
CN1711369A CNA2003801032739A CN200380103273A CN1711369A CN 1711369 A CN1711369 A CN 1711369A CN A2003801032739 A CNA2003801032739 A CN A2003801032739A CN 200380103273 A CN200380103273 A CN 200380103273A CN 1711369 A CN1711369 A CN 1711369A
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substrate
load
lock
parts
vacuum
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CN1711369B (zh
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R·奥斯特曼
A·比歇尔
M·叶利亚库比
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TEL Solar AG
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Unaxis Balzers AG
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/07Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H01L21/677
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Abstract

为了简化并提高多工序基片真空处理的灵活性,一负载锁定和处理塔LLPT1包括一负载锁定部件LLA和一处理部件PMA。负载锁定部件LLA一方面与外部环境AT相连通,另一方面与位于一运送部件TA中的真空环境V相连通。基片在负载锁定部件LLA和处理部件PMA之间的搬运是通过各开口来实现的。

Description

用于真空处理两维加长基片的装置及加工这种基片的方法
本申请通常涉及一种真空处理加长且比较薄的基片,尤其是用于制造太阳电池板、TFT显示板或等离子体显示板的基片。本申请中大且薄的基片,诸如玻璃需要进行包括半导体沉积在内的真空处理。
在这种加长基片的工业加工中必须小心搬运。因此,尽管基片的微粒污染物在水平位置上比仅在垂直位置上可能更严重,但是在运送和真空处理过程中保持该基片的水平方位已经成为了惯例。相对基片的稳定的无振动支承件而言,水平运送和处理具有很大的优势。从下述文献中可以获得有关搬运和真空处理这样基片的技术:
US6533534;
US6391377;
US6177129;
US5515986;
US6296735,
上述这些文献的申请人都与本发明的申请人相同。
还可以参考以下文献:
US5512320;
US5798739;
US6238161。
当需要进行真空处理和具有上述类型的基片变得越来越大时,一方面,用于工业和自动处理这种基片的装置也会变得越来越大。由于在运送和真空处理的过程中需要将基片保持在水平方位上,所以用于该基片处理的装置与其占地(footprint)区域相比变得更加大了。由于这种处理设备或者装置需要安装在清洁的室内环境中,所以这种加大的体积将会显著地增加加工成本。
此外,在考虑其占地区域以及必须保证在真空处理设备的负载锁定和处理站之间安全运送该基片的情况下,搬运机器人将变得更大了。
US5275709中公开了一种用于涂覆大基片的装置,该装置外观上比较紧凑,其具有最小体积的腔室并且能对该基片进行高质量的多层涂覆。该现有的装置通过加工具有最小的腔室壁表面来进行加工而明显比较便宜。
现有的装置主要包括:沿垂直方向相互叠置的负载锁定和处理室,以及用于在一个负载锁定室和一个处理室之间搬运基片的运送室。通过将负载锁定和处理室以塔型方式一个叠置在另一个上,能将用于搬运和处理处于水平方位的基片的装置的总占地区域减至最小。
具体而言,现有的装置设有两个垂直塔,其中一个塔包括一输入/输出负载锁定室以及位于该负载锁定室之下的处理室,另一个塔只包括处理室。两个塔被设置成:在一中心运送部件的相对侧上,工件搬运开口彼此面对,其中运送部件设有一个轻型机器人,该机器人用于操作(serving)两个塔的开口。
虽然在US5275709所公开的装置中提出了一个概念,即可通过垂直叠置构造一多室设备,使其占地区域减至最小,但是存在的缺点是该多处理设备的两个塔都执行一个基片多工序处理。通过一个输入/输出负载锁定室,将基片从周围环境输入到处理设备中,然后在两个塔的各处理站之间按需要前后地运送,最后通过所述一个负载锁定室将基片从处理设备中取出来。
本发明的一个目的在于,在具有与US5275709中用于大基片处理的主要塔一样的结构的情况下,进一步简化基片的搬运,并提高通过多工序基片真空处理的基片的灵活性。
本发明的目的可通过一种用于真空处理两维加长基片的装置来实现,该装置包括:
(a)一个具有一运送机器人部件的真空运送室;
(b)一个具有至少一个处理站的处理部件,该处理部件通过至少一个工件传送开口与所述真空运送室相连通;
(c)一个负载锁定部件,该部件通过至少一个工件传送开口与所述真空运送室相连通,并且还通过至少一个工件传送开口与位于所述真空运送室以及所述处理部件之外的周围环境相连通;
(d1)一个负载锁定和处理塔,该塔由所述处理部件和所述负载锁定部件沿一个垂直地设置在另一个之上的方式构成。
这样,对基片的整个处理包括:将基片从负载锁定部件垂直地运送到至少一个处理室中,其中这样的处理室优选可设置多于一个;通过水平运送将基片送入到这些处理室中并从其中传送出来。因此,负载锁定和处理塔构成一种自适应、一体的基片处理模块。
在本发明装置的第二种优选实施方式中,该装置包括:
(a)一个具有一运送机器人部件的真空运送室;
(b)一个具有至少一个处理站的处理部件,该处理部件通过至少一个工件传送开口与所述真空运送室相连通;
(c)一个负载锁定部件,该部件通过至少一个工件传送开口与所述真空运送室相连通,并且还通过至少一个工件传送开口与位于所述真空运送室以及所述处理部件之外的所述装置的周围环境相连通;
(d2)至少两个负载锁定和处理塔,每一个塔都包括一个负载锁定部件和一个处理部件。
该第二种优选实施方式具有至少两个负载锁定和处理塔,每一个塔都包括一个负载锁定部件和一个处理部件。因此,将一个运送部件用于操作两个或者多于两个的负载锁定和处理塔。这些塔中的每一个都构成一种包括输入和输出负载锁定基片在内的、自适应、一体的多工序基片处理。因此,相同或者不同的多工序处理也具有通用的并联、多工序处理能力。
尽管多于两个的负载锁定和处理塔能被聚集在运送室的周围,但是就简单和节省空间、尤其是减小占地区域而言,一最佳的结构可为在一个两负载锁定和处理塔中设置一运送室。利用该塔可以实现相同基片多工序处理或者实现在每个负载锁定和处理塔中进行一所希望且不同的处理。
尽管本发明的主要目的是实现在每个负载锁定和处理塔中进行一种自适应的多工序基片处理,但是也不排除可以设置一个处理室或者处理部,从而对来自于两个或者多个负载锁定和处理塔中的基片进行处理。这样的一种通用的处理室或者处理部可以是,例如一中间存储室,用于使基片的温度长时间保持在已经被处理过之后或者在通过各自负载锁定被输送到周围环境之前的温度。可以将这样的一种通用的处理室或者处理部设置在两个塔之下,因此,该基片中间存储室不会影响装置的总占地区域。
如在下面将详述的一样,本发明的装置被设计成:利用至少一个负载锁定和处理塔对一个基片进行处理或者对基片进行批量处理,或者以一种混合方式对一个基片和批量基片进行处理。
在本发明上述两个优选实施例的一个改进中,运送机器人包括用于至少一个基片的至少一个基本上水平的基片支承件,该基片支承件沿垂直方向受到驱动且可控地移动,从而使该基片支承件与前述塔之一的一个开口对齐,而且该基片支承件能沿水平方向可控地移动到上述至少一个塔中,并将该基片留在塔中用以进行处理或者负载锁定,或者该基片支承件可将基片从进行处理或者负载锁定中取出来。
在对基片支承件的一个改进中,该基片支承件还可以围绕一垂直轴以可控驱动方式旋转。尽管基片支承件是可旋转的,但是该旋转运动优选被限制在至多180°的范围内,更具体而言,被限制在至多45°的范围内。在该基片支承件的优选实施方式中,该基片支承件分别以一种可控方式沿垂直方向和水平方向受到驱动。
在本发明上述两个优选实施例的一个改进中,至少一个处理部件包括至少一个基片批量处理模块,在该模块中,同时装载、同时处理并同时取出至少一个基片。在另一个优选实施例中,还可以与基片批量搬运和处理进行结合,该至少一个处理部件包括至少一个基片处理模块。
对于优选实施方式中的负载锁定部件而言,在本发明上述两个优选实施例的一个改进中,至少一个负载锁定部件包括一个输入/输出负载锁定部件,并实现对从周围环境向运送室传送以及从运送室向周围环境传送的至少一个基片进行负载锁定。
在一个优选实施方式中,该输入/输出负载锁定部件包括至少一个基片输入负载锁定室。在上述输入/输出负载锁定部件的另一种实施方式中,该输入/输出负载锁定部件包括至少一个基片输出负载锁定室。在上述输入/输出负载锁定部件的另一种实施方式中,该输入/输出负载锁定部件包括至少一个基片批量输入负载锁定室,至少一个基片批量输出负载锁定室以及至少一个输入/输出基片批量负载锁定室。
在具有至少两个负载锁定和处理塔的本发明第二个优选实施例中,一个优选方式是:一个负载锁定和处理塔中包括一个输入负载锁定部件和一个输出负载锁定部件。
在本发明第二个优选实施例中,一个优选方式是:两个负载锁定和处理塔相对设置,即设置在该运送真空室的相对侧上并且使运送室的各开口彼此面对。这是I型占地区域。
在本发明第二个优选实施例中,第二个优选方式是:两个负载锁定和处理塔在该真空运送室的一侧上彼此并排设置,因此,该塔和真空运送室共同构成U型占地区域。
在本发明第二个优选实施例中,略逊于第二个优选方式的第三个优选方式是:两个负载锁定和处理塔配备有真空运送室,该塔和真空运送室共同构成Y型占地区域。
在上述两个优选实施例的一优选实施方式中,该装置具有基片搬运和处理能力,其中的基片具有至少1平方米,优选至少2平方米,甚至为至少4平方米的尺寸。
在上述两个优选实施例的一优选实施方式中,负载锁定部件包括用于至少一个基片的至少一个加热和冷却部件。
本发明还提供了一种用于加工真空处理两维加长基片的方法,该方法包括以下步骤:
将至少一个水平基片水平地进送到一负载锁定室中;
将所述至少一个水平基片从所述负载锁定室水平地运送到一真空运送室中;
控制所述水平基片沿垂直方向向上或者向下移动;
将所述水平基片水平地进送到一处理室中;
在所述的处理室中处理所述的水平基片;
将所述处理过的水平基片从所述处理室中水平地取出来并移回到所述真空运送室;
在所述运送室中沿垂直方向向上或者向下运送所述的水平基片;
将所述处理过的水平基片从所述运送室水平地运送到所述负载锁定室中;
将所述处理过的水平基片从负载锁定室中水平地取出来,因此,仅以线性的方式移动所述基片。
因此,在本发明优选实施例的方法中,该真空处理基片可以是太阳电池板基片、TFT显示板基片和等离子体显示板基片中之一。
下面结合附图,通过图中所示本发明优选实施例的示例对本发明进行详细说明。图中:
图1为示出本发明主要部件的负载锁定和加工塔的侧视图,并示出在这种塔中开口控制的不同操作方式;
图2为图1中负载锁定和加工塔的第一个实施例的示意图;
图3为与图1或者图2相似的负载锁定和加工塔的另一种实施方式的示意图;
图4为与图1至图3相似的负载锁定和加工塔的第三个实施方式的示意图;
图5为与图1至图4相似的负载锁定和加工塔的第四个实施方式的示意图;
图6为与图1至图5相似的负载锁定和加工塔的第五个实施方式的示意图;
图7为与图1至图6相似的负载锁定和加工塔的第六个实施方式的示意图;
图8为在图1至图7的一个实施例中设有大表面基片的负载锁定和加工塔的顶视图;
图9为用于将大基片支撑在负载锁定和加工塔的特定位置上的定位结构示意图;
图10为本发明装置的第一个实施例的侧视图,并示出本发明加工方法的操作,还包括一个设置在真空运送室中由机器人操作的负载锁定和加工塔;
图11为图10所示装置的顶视图;
图12为与图10相似的示意图,示出了本发明装置的第二个实施例和执行本发明的方法,该装置设有两个负载锁定和加工塔和一个中间真空运送室;
图13为与图11相似的示意图,示出了图12中装置的实施例的顶视图;
图14为简化示意图,示出应用在图12装置的运送室中的机器人结构;
图15为在图14所示机器人中,用于在操作中支撑基片的基片支承件;
图16为在图12所示真空运送室中,用于将基片传送到负载锁定和加工塔的机器人的第三种变型的透视图;
图17为本发明具有两个呈U形结构之负载锁定和加工塔的装置的另一个实施例顶视图;
图18和19为与图17相似的示意图,示出具有两个呈U形结构之负载锁定和加工塔的另两个实施例;
图20为本发明装置的另一个实施例的顶视图,示出具有两个相对同一真空运送室呈Y形结构之负载锁定和加工塔;
图21为图20所示实施例的顶视图,示出构成真空运送室内一机器人的不同方式;
图22为本发明装置的另一个实施例的顶视图,该装置中设有四个负载锁定和加工塔,该塔由同一个位于真空运送室中的可旋转机器人来操作;以及
图23为更详细地示出本发明装置的一个侧视图,并将图10和11所示的内容作为一个目前的优选实施例。
图1中示出了作为本发明一主要部件的负载锁定和加工塔LLPT1的侧视图。LLPT是一个垂直塔,其包括一负载锁定部件LLA和一个处理部件PMA。如下将详述的一样,负载锁定部件LLA可包括:至少一个基片输入/输出负载锁定室,至少一个基片输入负载锁定室,至少一个基片输出负载锁定室,至少一个基片批量输入/输出负载锁定室,至少一个基片批量输入负载锁定室,至少一个基片批量输出负载锁定室。
这样,LLPT1中负载锁定部件LLA主要包括至少一个负载锁定室。图1中的负载锁定部件LLA一方面与作为环境空气的外部周围环境AT相连通,另一方面与运送部件TA2中的真空V相连通。图1中的双线/双方向箭头代表对一个或多个基片在周围环境AT和负载锁定部件LLA以及运送部件TA2之间最普通的双向搬运。但是,必须指出的是,在本发明整个装置的一些结构中,LLPT1可以设有一个仅具有输入负载锁定部件或者一个仅具有输出负载锁定部件的负载锁定部件LLA,即用于将基片从周围环境AT向运送部件TA2中传送的负载锁定部件,或者用于将基片从运送部件TA2向周围环境AT中传送的负载锁定部件。
从图中还示出:在负载锁定部件LLA和运送部件TA2与周围环境AT之间搬运一个或者多个基片是通过各个开口O来进行的,其中,各个开口O分别由各个负载锁定阀而密封且可控制地闭合,这些开口在图1中以密封且可控制的开口Os表示。
负载锁定和加工塔LLPT1还包括一个处理模块部件PMA,该部件包括一个或者优选为多个的处理室。这些处理室可以是一个基片的处理室或者为基片批量处理室。在这些处理室中,各基片或者这批基片通过一真空处理加工,例如通过CVD,PECVD,PVD处理或者通过加热、冷却等进行加工。相对于基片加热和/或冷却而言,这些加工可以单独或者附加在LLA之内来进行。
图1还示出了在双向基片搬运中使用的PMA和运送部件TA。根据在PMA中进行的加工类型以及对清洁的特殊需要,在PMA和TA之间进行的这种双向基片搬运通过开口O来执行,其中,开口O可以是图1中所示的固定开口Op,可控闭合、但非密封闭合的开口Ops,或者可控且密封闭合的开口Ops。
负载锁定和加工塔LLPT1的主要特征在于垂直排列并设有一个负载锁定部件LLA和一个处理模块部件PMA。
图2至图7所示内容与图1相类似,区别在于构成LLPT1的具体形式不同。图2中,LLPT1包括多个,例如三个基片输入/输出负载锁定站LLio,构成了图1中的LLA。图2所示实施方式中的PMA还包括多个、例如三个基片处理室PM1至PM3。
在图3所示的LLPT1的实施方式中,LLA的结构与图2所示的相同。PMA包括一个基片批量处理模块BPM。在图4所示的实施方式中,处理模块部件PMA实际上等同于图2中所示的该部件。负载锁定部件LLA包括第一数目的输入基片负载锁定模块LLi和第二数目的输出基片负载锁定模块LLo。在图5所示的实施方式中,负载锁定部件LLA被设计成与图4实施方式所示的LLA相同,而处理模块部件PMA包括一个与图3实施方式所示相同的批量处理模块BPM。
图6所示的LLPT1的实施方式包括一个处理模块部件PMA,该处理模块部件PMA是由图2至图5之一所示的PMA构成。负载锁定部件LLA包括一个基片批量输入/输出负载锁定室BLLio。在图7所示的实施方式中,处理模块部件PMA可与图2至图5所示实施方式中相同,而负载锁定部件LLA包括一基片批量输入负载锁定模块BLLi和一基片批量输出负载锁定模块BLLo。
上述这些具体实施方式明确地教导本领域普通技术人员如何将规定、适合的负载锁定和处理模块进行组合,以执行预定的基片处理,从而保持LLPT1的基本功能,即具有负载锁定部件和处理模块部件的垂直塔。
就图2所示的实施方式而言,在某些情况下不将该LLPT1的垂直区域细分成上部负载锁定部件和下部处理模块部件,而是将LLA模块和PLA模块沿负载锁定和处理塔LLPT1的垂直区域混合起来可能更好。如在本发明说明书介绍性部分所述,本发明具体而言用于真空处理大的平面加长基片,例如具有至少1平方米的尺寸,优选至少2平方米的尺寸,尤其是4平方米或者更大的尺寸。
因此,在本发明的优选实施方式中,包括负载锁定在内的整个处理是在使基片处于水平位置的状态下进行的。这样,可以对大表面且比较薄的基片进行安全搬运。在处理装置内,在负载锁定转变过程中、在处理过程中、以及在运送过程中,处于水平状态下的基片可以被精确地夹持。
图8为图1至图7中具有大表面基片3的LLPT1的顶视图。这样的定位方式优选应用在负载锁定部件LLA中以及应用在处理模块部件PMA中。图9是底壁5的一部分的侧视图,示出负载锁定部件LLA的一个模块,还示出了处理模块部件PMA的一个模块。将大基片3放置在一个定位部件上,该定位部件如图9所示包括一个特定的定位销,而且该定位销位于薄且大的基片3上。
就处理模块部件PMA的处理模块和/或负载锁定部件LLA的负载锁定模块的可能结构而言,在专利US6296735中,尤其是附图1,2,3,5至11,15至22以及说明书相应部分中;在专利US5515986中,尤其是附图1,2,3,5至9中;以及专利US6177129中,尤其是附图1至4,7至8中都公开了处理模块以及负载锁定模块的内容,还详细描述了利用本发明的运送部件Ti对基片的搬运,下面将对总时间和处理进行详述。本文还对位于各负载锁定部件和处理模块部件中的处理模块和/或负载锁定模块各可能概念进行描述。但是,必须指出的是:在附图1至9中所示的负载锁定部件和处理模块部件都仅设置在一个塔中,上述内容在这些文献中仅是提及并没有教授。
下面,对本发明加工方法和装置进行详细描述,还将会涉及前述LLPT1本身,这是指可以采用前面提到的任何结构,诸如图1至图9所示的结构。只有在规定的尺寸只能采用上述特定实施方式中的LLPT时,才会对这样的LLPT的实施方式进行详述描述。
图10示出本发明装置的第一个优选实施方式的侧视图,该装置用于对真空处理的、大体上为平面的基片进行加工。该第一个优选实施方式主要包括一个LLPT1。该LLPT1通过垂直排列的各负载锁定和处理模块开口与一个运送部件TA2相连通,该运送部件TA2把基片搬运到负载锁定部件LLA中并从LLA中搬运出来,而且该运送部件还把基片搬运到处理模块部件PMA中并从PMA中搬运出来。运送部件2包括一个运送机器人9,该运送机器人可沿水平方向h将基片运送到负载锁定部件LLA和处理模块部件PMA的各模块中并从上述各模块中运送出来,而且该运送机器人还可沿垂直方向v将基片从与PMA和LLA的至少一个第一开口对准的一位置运送到与至少一个第二开口对准的一位置。图11示出了图10中装置的顶视图。
于是,本发明装置的第一个实施方式包括一用于LLPT1的运送部件TA2,其中LLPT1包括一个负载锁定部件LLA和处理模块部件PMA。因此,负载锁定部件LLA具有如图中双箭头i/o所示的输入/输出负载锁定功能。在该实施方式中,LLPT1可用于进行负载锁定和处理,该负载锁定和处理对至少一个基片的预定多加工步骤是必需的。
将运送部件TA2设计成可操作位于LLPT1内各开口之间的基片。运送部件TA2需要通过其机械式运送部件9沿水平h和垂直v进行运送。任何时候将对基片进行具有不同处理步骤的一不同处理时,仅需要更换LLPT1。由于对于预定基片处理而言,所有的模块或者站在前述LLPT1中都是沿垂直方向一个设置在另一个之上的,所以用于该处理的所有模块的占地区域应该被减至最小。此外,运送部件的占地区域也应该被减至最小,以便于水平地操作LLA和PMA中各模块。与US5275709中公开的内容相反,图10和11所示的优选装置事实上用于一模块塔,该模块塔可用于执行包括将基片输入到处理站并从该处理站输出在内的所有处理步骤。
在图12和图13中示出了进行本发明加工方法的装置的第二个优选实施方式。图中,一第一LLPT1a和一第二LLPT1b都与同一个运送部件TA相连通。选择第一LLPT1a的LLAa以及第一LLPT1a的PMAa,以作为对基片3a进行具有不同处理工序中的第一预定的处理步骤。
在第二LLPT1b中,将LLAb以及PMAb设计成可对一不同组的基片3b进行第二处理。因此,在各塔1a和1b中的两个处理步骤可以是相同的,但是也可以是有选择的不同。事实上,每一个塔1a和1b本身完全就能够将各个基片输入/输出到各个真空处理工序并且使所有组的处理模块进行所需的塔规定处理。
如图12和图13所示,运送部件2ab可相对于第一LLPT1a和第二LLPT1b进行沿水平和垂直方向完全独立的基片运送。机器人9ab受控执行相对于塔1a的水平运送ha,并且独立地执行相对于第二塔1b的水平运送hb;类似地,机器人对在塔1a中处理过的基片进行垂直运送va,并独立地对第二塔1b进行这种运送vb。
图14中示出的机器人11还可以应用在图12和13所示的运送部件TA的真空室中。
如图14所示,在运送部件(没有示出)的真空室中设有一个固定的中心支柱13。为了相对于图12和13所示的LLPT来搬运大而平且水平设置的基片3a,在支柱13的一侧设有一个第一滑动部件14a,该滑动部件以受控驱动的方式可沿垂直方向va滑动。在该滑动部件14a上设有多个(图中为三个)基片支架15a,这些支架沿水平方向延伸出来并且沿垂直方向彼此间隔设置,在一个优选实施方式中,该间隔是一个可调节的间距pa。在本实施方式中的该间距pa是可调节的以适应在LLA和/或PMA上具有不同垂直间距的基片搬运开口的需要。
每个支架15a可在伸缩式驱动装置的作用下沿水平方向h伸长和缩短,其中该驱动装置设置在封装部件17a中。支架15a设有多个用于支撑销20的支承件,该支承件将位于LLPT1a中待处理的基片3a支撑在其上,并使基片在水平和垂直运送的过程中受到夹持。在与滑动部件14a相对一侧上,沿支柱13还设有一第二滑动部件14b,其包括支架15b,用于支撑销20b的支撑件19b,封装部件17b等与安装在滑动部件14a相类似的部件,但是,如图所示,用于相对于图12或者13中的LLPT1b来搬运基片3b的支架15b的数量不需要等于支架15a的数量,其中支架15a用于操作LLPT1a中待处理的基片3a。
可优选的是,水平可动的支承件19a和19b以图15所示的叉子方式来构成。在图15虚线中,示出了位于支承件19a,b上各基片3a,3b,而且该基片被设置在位于LLA或者PMA内的支承销21上。在图12至15所示的第二个实施方式中,设有本发明具有两个独特负载锁定和处理塔LLPT1a和1b的装置,而且在该塔中设有各种模块用以进行基片处理,包括将该基片从周围环境AT传送到真空处理中并再从真空处理返回到周围环境中。
本发明的第二个实施方式中,运送部件TA2ab内的机器人9ab不需要进行任何旋转运动。基片运送只包括沿水平h和垂直v的基片运动。
如图14所示,控制单元21被设置成用于控制在一定范围内的水平运送运动ha,b和垂直运送运动va,b以及各水平和垂直运送周期的时间,如果需要还控制各支承部件的间距。可优选的是,该控制单元21是一个自由可编程单元,这样,就可根据特定处理的需要,尤其是可以灵活地适应运送周期的时间。可优选的是,如图14所示,该控制单元21还通过与LLAab和PMAab控制连接而控制处理和负载锁定周期。考虑到在对基片进行多工序处理时,在PMA的处理模块内执行一相应真空处理所需要的时间量和用于将基片通过负载锁定部件LLA传送的时间量将会大于从一个模块向另一个模块运送一基片或者一批基片所需要的时间量,而且在优选实施方式中,运送部件TA9ab内的运送机器人实际上仅用作一个向上/向下移动的工具。
如图16所示,该机器人包括一个抽屉式元件25,该元件相对于导向件27沿垂直方向v上下可控地受到驱动。
在抽屉式元件25中设有一个滑块29,该滑块能克服可控驱动并沿水平方向h移动,该滑块为框架或者叉子形状并可以受到水平驱动而运动到负载锁定或处理模块部件的一相应部件中。
如图16中虚线所示,该实施方式中的运送机器人可驱使滑块29向导向件27的左或者右手侧移动。
可将上述内容应用到图12和图13所示的、用于将基片从LLPT1a运送到LLPT1b(反之亦然)的实施方式中。因此,例如,在LLPT1a中,负载锁定部件LLAa可以只被设计成一输入负载锁定模块,而LLPT1b中的LLAb可以只被设计成一输出负载锁定模块。此外,还可以设置一个处理模块,该处理模块用于对LLPT1a和LLPT1b中的基片进行处理。这样,就不排除在LLPT1a和LLPT1b之间基片的交叉传送,以及设置用于LLPT1a和LLPT1b的共同处理模块。通过图16所示实施方式,在运送部件中,基片在LLPT1a和LLPT1b之间的搬运以及设置一共同处理模块都能在不使基片围绕垂直轴旋转的情况下实现。
然而,这种无旋转的交叉搬运还可通过不同于图16所示的机器人来实现。
在诸如图10和12所示优选实施方式的本发明装置中,不需要围绕机器人搬运基片的垂直轴进行旋转运动。图12所示实施方式由于具有I形占地区域而被称为I型。在图17,18和19中,还示出了与图13类似的本发明装置的优选实施方式。这些实施方式中都不需要机器人在运送部件TA中围绕一垂直轴进行旋转运动,就能操作多个LLPT的开口。
与图12和13所示的具有I型结构装置不同的是,图17至19为具有U型结构的装置。在图17中,两个LLPT1a和LLPT1b以肩并肩的方式设置。在运送部件TA的真空室中,设有两个机器人9a和9b,每个机器人都通过各自开口操作LLPT1a或者LLPT1b中的模块。每个机器人9a和9b都通过可控驱动的方式提供一垂直的上下运动va,Vb。每个机器人9a和9b还提供朝向并进入或者来自于各LLPT1a,1b的模块的水平方向前后运动ha,hb。机器人9a和9b与图14所示的机器人相似,主要包括支架15a和支架15b,这两个支架不是朝向相反的方向而是沿平行方向设置在支承件13的一侧上。两个机器人9a和9b的运动可以单独地被控制,可优选的是通过自由编程控制单元(没有示出)来控制。如果在两个LLPT1a,1b中需要进行同步处理,则可以同步操作两个独立控制的机器人9a和9b,或者设置一个机器人用以同时操作两个LLPT1a,1b。
这样的实施方式如图18所示,并且图18与图17相类似。如图所示,设置一个机器人9ab,该机器人将基片的垂直运送运动vab与对准LLPT1a和1b的开口相结合。水平运动ha,hb可以是同步的或者对每个LLPTM分别进行控制。
图19示出U型结构的第三个实施方式。在该图中仅设置一个机器人9ab。为此该机器人9ab通过提供垂直运送运动vab和水平运送运动hab来操作LLPT1a和1b。因此,机器人9ab进行如图所示的水平运动Wab。
图20为图17至19所示结构的一个变型,示出了具有Y型结构的实施方式。两个LLPT1a和1b设置在运送部件TA上以便形成一角度ψ。图20中机器人的结构基本上与图18中相同。一个机器人9ab用于操作两个成角度排列的LLPT1a和1b中的模块。因此,该机器人的结构可与图14中所示的非常相似,只是支架不是相对设置,而是相对支柱13的中心轴线成角度ψ而设置。
对于Y型实施方式的装置而言,图21示出了主要按照图19的方式来构成运送部件TA中机器人的另一种方式。机器人9ab被设计成可绕中心轴线旋转至少ψ的角度,以操作成角度排列的LLPT1a和1b中的模块。
如上所述,设置两个或者多个LLPT可实现不同或者相同多工序处理中的柔性全并联处理。按照这种方式,如图22所示,完全可能设计出具有运送机器人9ab的运送部件,其中该机器人可绕一中心轴线旋转,以操作图中所示沿圆周方向围绕运送部件TA设置的多于两个的LLPT。尽管本发明装置的多个优选实施方式为如图10所示的一个LLPT的结构,但是也可以如图17至21所示为具有I或者U或者Y型的两个LLPT的结构。
图23示出本发明现在优选的一个装置。该装置具有图10所示的结构。该优选实施方式包括:一个LLPT,该LLPT从上向下包括一个两基片批量处理模块BPM1;一个两基片批量输入和输出负载锁定模块BLLio;以及一个第二两基片批量处理模块BPM2。因此,负载锁定模块BLLio被分成:一第一输入负载锁定部Ci;一第一输出负载锁定部Co;一第二输入负载锁定部C1以及最后一个第二输出负载锁定部Co。用于;连通BPM1、BLLio、BPM2和运送部件TA之间的各个开口33分别设有控制阀35。
在运送部件TA的室37中设有一个机器人39,该机器人能以可控方式沿水平方向h进行移动,而且该机器人包括一个两基片批量运送件41,该运送件41设有一上、一下的基片运送叉子43a和431。由两个水平运送件41构成的整个部件能以可控方式沿垂直方向进行移动。上基片运送叉子43a和下基片运送叉子431之间的间距可被设计成与每个批量处理模块和批量负载锁定模块的每个开口之间的间距相等。这样的装置尤其适合于处理用于太阳电池板、TFT或者等离子体显示板的大基片,该基片具有至少1平方米、优选为2平方米,甚至是4平方米的尺寸。由于本发明的处理模块可与运送室通过开口分离开,所以可根据需要对它们分别进行操作。
本发明还涉及以下内容:
US6177129中公开的在一可编程技术中对整个时间和周期的控制,以及与处理或者负载锁定模块相结合的柔性机器人技术的采用。
US6533534;
US5515986以及
US6296375中有关构成处理模块、负载锁定模块的技术,以及通过机器人对处于水平状态扁平基片进行操作的技术。
这些文献都构成本发明不可分割的一部分。

Claims (21)

1.一种用于真空处理两维加长基片的装置,该装置包括:
(a)一个具有一运送机器人部件的真空运送室;
(b)一个具有至少一个处理站的处理部件,该处理部件通过至少一个工件传送开口与所述真空运送室相连通;
(c)一个负载锁定部件,该部件通过至少一个工件传送开口与所述真空运送室相连通,并且还通过至少一个工件传送开口与位于所述真空运送室以及所述处理部件之外的周围环境相连通;
(d1)一个负载锁定和处理塔,该塔由所述处理部件和所述负载锁定部件以一个垂直地设置在另一个之上的方式构成。
2.根据权利要求1中特征(a),(b),(c)所述的装置,还包括:
(d2)至少两个负载锁定和处理塔,每一个塔都包括一个负载锁定部件和一个处理部件。
3.根据权利要求1或者2所述的装置,其特征在于:所述的运送机器人包括用于至少一个基片的至少一个基本上水平的基片支承件,所述的基片支承件沿垂直方向和沿水平方向受到驱动且可控地移动,所述的基片支承件能移动到与所述开口对齐并移动到所述至少一个负载锁定和处理塔中以及从其中移动出来。
4.根据权利要求3所述的装置,其特征在于:所述的基片支承件还可以围绕一垂直轴以可控驱动方式旋转。
5.根据权利要求4所述的装置,其特征在于:所述的旋转运动被限制在至多180°的范围内。
6.根据权利要求5所述的装置,其特征在于:所述的旋转运动被限制在至多45°的范围内。
7.根据权利要求1或者2所述的装置,其特征在于:所述的运送机器人包括用于至少一个基片的至少一个水平基片支承件,所述的基片支承件分别以一种可控方式沿垂直方向和水平方向受到驱动。
8.根据权利要求1或者2所述的装置,其特征在于:至少一个所述处理部件包括至少一个基片批量处理模块。
9.根据权利要求1或者2所述的装置,其特征在于:至少一个所述处理部件包括至少一个基片处理模块。
10.根据权利要求1或者2所述的装置,其特征在于:至少一个所述负载锁定部件包括一个输入/输出负载锁定部件。
11.根据权利要求10所述的装置,其特征在于:所述的输入/输出负载锁定部件包括至少一个基片输入负载锁定室。
12.根据权利要求10所述的装置,其特征在于:所述的输入/输出负载锁定部件包括至少一个基片输出负载锁定室。
13.根据权利要求10所述的装置,其特征在于:所述的输入/输出负载锁定部件包括至少一个基片批量输入负载锁定室,至少一个基片批量输出负载锁定室以及至少一个输入/输出基片批量负载锁定室。
14.根据权利要求2所述的装置,其特征在于:所述的负载锁定和处理塔中的一个包括一个输入负载锁定部件和一个输出负载锁定部件。
15.根据权利要求2所述的装置,其特征在于:所述的两个负载锁定和处理塔设置在所述运送真空室的相对侧上并且彼此面对。
16.根据权利要求2所述的装置,其特征在于:所述的两个负载锁定和处理塔在所述真空运送室的一侧上并排设置,所述塔和所述真空运送室共同构成一U型占地区域。
17.根据权利要求2所述的装置,其特征在于:所述的两个负载锁定和处理塔配备有所述的真空运送室,所述塔和所述真空运送室共同构成一Y型占地区域。
18.根据权利要求1或者2所述的装置,其特征在于:所述的基片具有至少1平方米,优选至少2平方米,甚至为至少4平方米的尺寸。
19.根据权利要求1或者2所述的装置,其特征在于:所述的负载锁定部件包括用于至少一个基片的至少一个处理部件和至少一个涂覆部件。
20.一种用于加工真空处理两维加长基片的方法,该方法包括以下步骤:
将至少一个水平基片水平地进送到一负载锁定室中;
将所述至少一个水平基片从所述负载锁定室水平地运送到一真空运送室中;
控制所述水平基片沿垂直方向向上或者向下移动;
将所述水平基片水平地进送到一处理室中;
在所述的处理室中处理所述的水平基片;
将所述处理过的水平基片从所述处理站水平地取出来并移回到所述真空运送室;
在所述运送室中沿垂直方向向上或者向下运送所述的水平基片;
将所述处理过的水平基片从所述运送室水平地运送到所述负载锁定室中;
将所述处理过的水平基片从负载锁定室中水平地取出来。
21.根据权利要求20所述的方法,其特征在于仅以线性的方式移动所述基片。
CN2003801032739A 2002-11-15 2003-11-12 用于真空处理两维加长基片的装置及加工这种基片的方法 Expired - Fee Related CN1711369B (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112074943A (zh) * 2018-05-15 2020-12-11 瑞士艾发科技 基体真空处理设备及其方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
NL1028907C2 (nl) * 2005-04-29 2006-10-31 Fico Bv Werkwijze en inrichting voor het aanvoeren en het afvoeren van dragers met elektronische componenten.
US7628574B2 (en) * 2006-03-28 2009-12-08 Arcus Technology, Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
ITBS20060208A1 (it) * 2006-11-30 2008-06-01 Estral Spa Metodo ed impianto per il trattamento termico di elementi metallici
US8272825B2 (en) * 2007-05-18 2012-09-25 Brooks Automation, Inc. Load lock fast pump vent
US10541157B2 (en) 2007-05-18 2020-01-21 Brooks Automation, Inc. Load lock fast pump vent
US20100047954A1 (en) * 2007-08-31 2010-02-25 Su Tzay-Fa Jeff Photovoltaic production line
EP2200790A1 (en) 2007-08-31 2010-06-30 Applied Materials, Inc. Production line module for forming multiple sized photovoltaic devices
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 pecvd 시스템에서의 소스 가스 흐름 경로 제어
US20090188603A1 (en) * 2008-01-25 2009-07-30 Applied Materials, Inc. Method and apparatus for controlling laminator temperature on a solar cell
JP5139253B2 (ja) * 2008-12-18 2013-02-06 東京エレクトロン株式会社 真空処理装置及び真空搬送装置
US20100162955A1 (en) * 2008-12-31 2010-07-01 Lawrence Chung-Lai Lei Systems and methods for substrate processing
US7897525B2 (en) * 2008-12-31 2011-03-01 Archers Inc. Methods and systems of transferring, docking and processing substrates
US8367565B2 (en) * 2008-12-31 2013-02-05 Archers Inc. Methods and systems of transferring, docking and processing substrates
US20100162954A1 (en) * 2008-12-31 2010-07-01 Lawrence Chung-Lai Lei Integrated facility and process chamber for substrate processing
US8110511B2 (en) * 2009-01-03 2012-02-07 Archers Inc. Methods and systems of transferring a substrate to minimize heat loss
JP5037551B2 (ja) * 2009-03-24 2012-09-26 東京エレクトロン株式会社 基板交換機構及び基板交換方法
CN103155133A (zh) * 2010-08-06 2013-06-12 东京毅力科创株式会社 基板处理系统、搬送模块、基板处理方法和半导体元件的制造方法
US20130340939A1 (en) * 2012-06-21 2013-12-26 Tel Solar Ag System for substrate handling and processing
JP6902379B2 (ja) * 2017-03-31 2021-07-14 東京エレクトロン株式会社 処理システム
DE102018216878A1 (de) * 2018-10-01 2020-04-02 centrotherm international AG Transporteinheit für paralleles Einfahren oder Ausfahren von Substratträgern, in parallele Prozessrohre und Verfahren zum gleichzeitigen Beladen von parallelen, horizontal beabstandeten Prozessrohren
US11965682B2 (en) 2020-12-16 2024-04-23 Samsung Electronics Co., Ltd. Air conditioner
US20240087924A1 (en) * 2022-09-12 2024-03-14 Hine Automation, Llc Multi-chamber Configuration

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2933207A (en) * 1957-06-19 1960-04-19 Structural Clay Products Res F Unit stacking apparatus
US5288852A (en) * 1984-03-06 1994-02-22 Dainippon Pharmaceutical Co., Ltd. Human tumor necrosis factor polypeptides
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
WO1991004213A1 (en) * 1989-09-12 1991-04-04 Rapro Technology, Inc. Automated wafer transport system
CA2112682C (en) 1991-07-03 2002-04-23 Michael A. Teitel Virtual image display device
US5275709A (en) 1991-11-07 1994-01-04 Leybold Aktiengesellschaft Apparatus for coating substrates, preferably flat, more or less plate-like substrates
EP0608620B1 (en) 1993-01-28 1996-08-14 Applied Materials, Inc. Vacuum Processing apparatus having improved throughput
US6296735B1 (en) 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
CH687986A5 (de) 1993-05-03 1997-04-15 Balzers Hochvakuum Plasmabehandlungsanlage und Verfahren zu deren Betrieb.
CH687987A5 (de) 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
KR100310249B1 (ko) * 1995-08-05 2001-12-17 엔도 마코토 기판처리장치
US5820366A (en) 1996-07-10 1998-10-13 Eaton Corporation Dual vertical thermal processing furnace
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US6099643A (en) * 1996-12-26 2000-08-08 Dainippon Screen Mfg. Co., Ltd. Apparatus for processing a substrate providing an efficient arrangement and atmospheric isolation of chemical treatment section
TW589391B (en) 1997-07-08 2004-06-01 Unaxis Trading Ag Process for vacuum treating workpieces, and corresponding process equipment
US6391377B1 (en) 1997-07-08 2002-05-21 Unaxis Balzers Aktiengesellschaft Process for vacuum treating workpieces, and corresponding process equipment
JPH11129184A (ja) * 1997-09-01 1999-05-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板搬入搬出装置
US6053687A (en) 1997-09-05 2000-04-25 Applied Materials, Inc. Cost effective modular-linear wafer processing
KR100265287B1 (ko) * 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
JP2965038B1 (ja) * 1998-09-21 1999-10-18 日新電機株式会社 真空処理装置
JP2000195925A (ja) * 1998-12-28 2000-07-14 Anelva Corp 基板処理装置
JP3455458B2 (ja) * 1999-02-01 2003-10-14 東京エレクトロン株式会社 塗布、現像装置及び塗布現像処理における基板再生システム
US6610150B1 (en) * 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
JP3442686B2 (ja) * 1999-06-01 2003-09-02 東京エレクトロン株式会社 基板処理装置
US6318945B1 (en) * 1999-07-28 2001-11-20 Brooks Automation, Inc. Substrate processing apparatus with vertically stacked load lock and substrate transport robot
US6402400B1 (en) * 1999-10-06 2002-06-11 Tokyo Electron Limited Substrate processing apparatus
US6402401B1 (en) * 1999-10-19 2002-06-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6296375B1 (en) 2000-01-05 2001-10-02 Maxlite-Sk America, Inc. Compact fluorescent lamp having a detachable translucent cover
SG94851A1 (en) * 2000-07-12 2003-03-18 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP4004248B2 (ja) * 2000-09-01 2007-11-07 大日本スクリーン製造株式会社 基板処理装置および基板検査方法
KR100398877B1 (ko) * 2001-05-09 2003-09-19 삼성전자주식회사 현상기 소음 및 진동방지구조를 갖는 화상형성장치
JP2003077974A (ja) * 2001-08-31 2003-03-14 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US7351291B2 (en) * 2002-02-20 2008-04-01 Tokyo Electron Limited Semiconductor processing system
US7335277B2 (en) * 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP4246654B2 (ja) * 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112074943A (zh) * 2018-05-15 2020-12-11 瑞士艾发科技 基体真空处理设备及其方法

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