CN1671481A - 使碳纳米管涂层形成图案的方法和碳纳米管布线 - Google Patents

使碳纳米管涂层形成图案的方法和碳纳米管布线 Download PDF

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CN1671481A
CN1671481A CN03817502.9A CN03817502A CN1671481A CN 1671481 A CN1671481 A CN 1671481A CN 03817502 A CN03817502 A CN 03817502A CN 1671481 A CN1671481 A CN 1671481A
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carbon nanotube
patterning
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D·J·阿瑟
P·J·格拉特考斯基
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Abstract

一种用于制造纳米复合电极或电路图案的方法，包括形成浸渍有粘合剂的连续碳纳米管层以及使用各种印刷或光成像技术使粘合剂树脂形成图案。另一种方法包括使用各种印刷或光成像技术使碳纳米管层形成图案以及随后将连续的粘合剂树脂应用到有图案的碳纳米管层上。从这些有图案的纳米复合涂层制备的制品包括用于平板显示、光电、触摸屏、电致发光灯和EMI屏蔽的透明电极和电路。

Description

使碳纳米管涂层形成图案的方法和碳纳米管布线
相关申请的参考
本发明要求题为NT Mixture的美国临时申请60/381,809以及题为Patterning NT-Based Coatings的美国临时申请60/381,810的优先权，两者的申请日都为2002年5月21日。
技术领域
本发明涉及用于使碳纳米管涂层形成图案的方法以及由该方法制造的碳纳米管布线。
背景技术
包括半导体基装置以及更大型的布线电路的当前电子设备依赖于使用在半导体基材上形成的金属线或高杂质区域的传统布线技术。半导体基装置具有在半导体基材上形成的金属布线层以及在半导体基材表面上形成的相互连接的装置元件。金属层本身经常通过贯穿分隔金属层的绝缘层的通孔而互相连接。此外，掺杂有杂质的半导体基材部分在半导体表面上形成的元件内或这些元件之间的起着布线线路(wiring line)的作用。
虽然这些布线线路采用现代的光刻技术而制造得非常精美，因此半导体基装置都可制成小型的，但是该布线线路的制造需要膜形成以及只可在高真空下操作的处理技术。例如，金属如铝和铜在半导体基材上使用包括溅射和蒸发的物理汽相沉积技术形成。使用离子注入技术将杂质离子如硼和磷注射入半导体基材中以在基材上形成导电部分。无定形硅层通过化学气相沉积技术在基材上形成，然后通过退火转化成多晶硅以形成布线层。如上述形成的许多层和膜必需通过蚀刻工艺如反应性离子蚀刻获得的预定布线图案。真空程度可以取决于方法而不同，例如10-6托(溅射)到几个托(反应性离子蚀刻)。真空程度不管怎样，该仪器的安装和维护都很昂贵。此外，除由无机电极材料如氧化铟锡(ITO)制成的材料外，由上述方法形成的所有布线线路都不能很好传输光。非常薄的金属膜可以为半透明的，但是这些膜的叠加会导致形成实际上阻塞光的层的形成。透明ITO膜可以依靠高度真空的仪器而形成，但是由于是无机特性而没有柔韧性。此外，铟的供给有限。
使用不需要制造仪器的昂贵安装或维护的方法可制备出大型布线电路。印刷电路板通过蚀刻敷铜箔叠层并结合印刷技术制备。当电路板是以环氧/玻璃叠层为基础时这些印刷板是坚硬的，而当它以聚酰亚胺叠层为基础时是柔软的。类似结构通过直接在基材上印刷导电膏剂而形成。膏剂的导电组分通常是金属填充物如银。该导电膏剂使用丝网印刷技术等印刷在基材上。当布线电路的性能要求非常低时，膏剂可以通过刷子施用。
虽然这些制备方法非常廉价，但是依赖于这些方法不可能制备小型装置如半导体装置。此外，由这些方法制造的布线电路是不透明的。光被叠层结构中敷铜箔和应用在基材上的银膏剂阻塞。因此，由这些方法制造的布线结构不能应用到需要透明导电膜精细图案的装置上，如电致发光的显示装置和液晶显示装置上。
人们已经致力于提供透明电极以取代ITO膜。典型实例是在聚合物粘合剂中的ITO颗粒的悬浮液。然而，该填充ITO的系统不能匹配连续ITO膜的电导率。此外，现在已开发出透明导电聚合物材料。这些聚合物通常需要掺杂剂以形成导电性质，并使用丝网印刷术或喷墨应用技术将材料应用到基材上。虽然它们仍然处于开发阶段，还未达到ITO膜的导电水平，但已预见到掺杂剂的加入对控制导电性能具有不利影响，而且它们不可能适合于小型装置。
碳纳米管制备的膜已知具有低致102欧/平方的表面电阻。题为“Methodfor Disentangling Hollow Carbon Microfibers，Electrically ConductiveTransparent Carbon Microfibers Aggregation Film and Coating for FormingSuch Film”的美国专利5,853,877描述了该导电碳纳米管膜的形成，而题为“Processing for Producing Single Wall Nanotubes Using Unsupported MetalCatalysts”的美国专利6,221,330泛泛描述了用于形成导电膜的碳纳米管的生产。然而，在现有技术中还没有报道用于使由碳纳米管制备的膜形成图案的方法。
包括碳纳米管的涂层如含有碳纳米管的膜已经有描述(参见美国专利申请10/105,623，该申请并入此处参考)。例如，该膜具有低致102欧/平方的表面电阻以及高致95％的总透光率。在膜中的碳纳米管的含量可以高达50％。
很惊奇地发现，该材料可以通过两步法形成，这导致形成具有低电阻和高透光率的纳米管膜。首先，碳纳米管的稀水溶液喷雾到基材上，水蒸发而只将固结的碳纳米管留在表面上。然后，树脂应用到固结碳纳米管上并渗入固结碳纳米管的网络中。
发明内容
本发明克服了与当前的金属基和硅基的布线技术有关的问题和缺陷，并提供了使用碳纳米管膜形成布线线路和电极的新布线方法。
本发明的一个具体实施方案涉及一种包括基材和位于基材上并有碳纳米管的有图案布线或电极的碳纳米管布线。
本发明的另外一个具体实施方案涉及一种使碳纳米管涂层形成图案的方法。该方法包括提供一种碳纳米管溶液，将溶液应用到基材上以在基材上形成固结碳纳米管膜，选择性使用粘合剂浸泽碳纳米管，从基材上去除部分没有用粘合剂浸渍的碳纳米管膜。
本发明的另外一个具体实施方案涉及一种使碳纳米管涂层形成图案的方法。该方法包括提供一种碳纳米管溶液，将溶液应用到基材上以在基材上形成固结碳纳米管膜，使用光致抗蚀剂浸渍碳纳米管膜，在采用光致抗蚀剂浸渍的碳纳米管膜上投影一个预定的图案以保护部分碳纳米管膜，再从基材上去除没有被投影保护的碳纳米管膜。
本发明的另外一个具体实施方案涉及一种使碳纳米管涂层形成图案的方法。该方法包括提供一种碳纳米管溶液，将溶液应用到基材上以在基材上形成固结碳纳米管，将碳纳米管膜暴露在穿过掩模(mask)的光源中，以及采用粘合剂浸渍暴露的碳纳米管膜。
本发明的另外一个具体实施方案涉及一种使碳纳米管涂层形成图案的方法。该方法包括提供具有碳纳米管和溶剂的涂敷混合液，并将涂敷混合液应用在基材上以形成一种预定图案，从印在基材上的涂敷混合物中去除溶剂而将固结碳纳米管的有图案膜留在基材上，再使用粘合剂浸渍碳纳米管膜。
本发明的其它具体实施方案和优点在下面的说明书部分中描述，而部分具体实施方案和优点从该描述中是显而易见的或可以从本发明的实施中得悉。
附图说明
图1示出了本发明一个具体实施方案(实施例1)的碳纳米管膜形成图案的方法的工艺步骤。
图2示出了本发明的另外一个具体实施方案(实施例2)的碳纳米管膜形成图案的方法的工艺步骤。
图3示出了本发明的另外一个具体实施方案(实施例3)的碳纳米管膜形成图案的方法的工艺步骤。
图4示出了本发明的另外一个具体实施方案(实施例4)的碳纳米管膜形成图案的方法的工艺步骤。
具体实施方式
正如此处的具体体现和广泛描述的那样，本发明涉及制品和使碳纳米管涂层形成图案的方法，具体地，涉及由这些方法制备的碳纳米管布线。
在本发明中，使用了上述形成碳纳米管膜的方法的独特性质。即，在基材上固结的碳纳米管在没有任何其它组分如粘合剂的情况下仍具有很强与基材表面的粘结力。因此，装置半成品即具有固结碳纳米管的基材与很多现有的装置加工技术相容。然而，粘结力太弱以至被中等强度的干扰而断裂。此外，在基材上固结的碳纳米管具有大量开气孔的网状结构。因此，具有足够低粘度以至渗入开气孔的材料可以应用到基材上，以便固结碳纳米管的开气孔中填入这些材料。
树脂应用之前，的在这些基材上的固结碳纳米管的微观观察表明网络结构是以碳纳米绳的形成为基础并且由这些绳形成网状结构的框架。该结构提供低电阻并同时提供高透光率，这因为这些绳组成的框架可以承担大多数导电，在这些绳之间的相对较大的孔允许所应用到碳纳米管上的树脂穿过。
可以有不同的方法形成依赖于这些特征的有图案碳纳米管膜。例如，碳纳米管膜可以首先在基材的全部表面形成。因为，在基材上的固结碳纳米管可以吸收作为网状结构的一部分的各种材料，用于形成图案的化学试剂可以引入到固结膜的整个部分或所选择的膜部分。例如，根据预定图案，溶解在溶剂中的粘合剂可以应用到固结碳纳米管膜上。粘合剂的应用可以通过包括优选丝网印刷、喷印、照相凹板滚筒印刷的传统方法进行。在溶剂干燥后，粘合剂留在网状结构中，并增强采用粘合剂溶液浸渍的碳纳米管膜部分。通过使用不会溶解粘合剂的水或溶剂冲洗在其上具有碳纳米管的基材，没有被粘合剂增强的碳纳米管的部分容易从基材上洗掉，而碳纳米管膜的增强部分保持完整。基材可以是柔性的或刚性的，可以由透明材料或光阻塞材料构成。对于透明电极的应用，尽管透明的柔性聚合物膜也可以使用，但通常透明无机玻璃板用作基材。当碳纳米管布线用作集成电路的一部分时，基材也可以是硅胶基材。此外，绝缘层可以在作为保护层的碳纳米管布线上形成。其它的碳纳米管布线可以在保护第一碳纳米管布线的绝缘层上形成，从而形成多层布线结构。
除将粘合剂应用到碳纳米管膜的所选择部分外，还可将光致抗蚀剂应用到整个碳纳米管膜上。光致抗蚀剂的应用可以通过包括优选的旋涂的任意传统方法进行。光致抗蚀剂一旦渗入固结碳纳米管的网状结构中，该装置半成品就可以适合于所有的传统光刻处理步骤。例如，将中间掩膜(reticle)的预定图案投影到浸渍有光致抗蚀剂的碳纳米管膜上。取决于所使用光致抗蚀剂的种类，光辐照的碳纳米管膜部分或没有辐照的膜部分在随后的步骤中去除。制品的布线图案转移到碳纳米管膜上。对比粘合剂的形成图案的方法，该方法可以在碳纳米管膜上形成更好的图案，可以与现存的硅基装置的制造方法更加相适合。此处所述的任何基材可以用作该制造方法的基材。绝缘层可以在有图案的碳纳米管膜上形成，也可形成多层碳纳米管布线。
此外，在基材上形成的碳纳米管膜根本没有进行“物理形成图案”。即，碳纳米管膜的电子特性可以在没有从基材物理去除膜的情况下使用。当使用强光源照射时，单壁碳纳米管(SWNTs)进行大的结构改造。尽管SWNTs在强光源辐照下的空气中可以烧坏，但是它们在合适辐照条件下转化成更大电阻的材料。P.M.Ajayan等在“Nanotubes in a Flash-Ignition andReconstruction，”(Science 296，70(2002))中有描述。对于光辐射，传统光刻仪器可以用于在碳纳米管膜上形成预定图案。当形成的布线图案是非常大的，光辐照可以通过在基材上简单放置掩膜而进行。如基材是透明的，优选掩膜可以放置在基材的背部，掩膜也可以直接放置在碳纳米管膜上。导电性的改变善没有预期到对碳纳米管膜以及纳米管绳的网状结构有重大影响。然后，粘合剂应用到整个碳纳米管膜上，并穿入网状结构中以增强结构。绝缘层可以在碳纳米管膜上形成，从而多层碳纳米管布线也可以形成。
有图案碳纳米管膜可以使用包括优选丝网印刷、喷印和照相凹板滚筒印刷的发明的使用方法直接在基材上形成。然而，上述用于形成碳纳米管膜的碳纳米管水溶液对该方法是不适合的，因为溶液的粘度不够高，因而不能与这些方法相符合。因此，需要添加化学试剂到溶液中以增加粘度。另外，碳纳米管和粘合剂的混合物，如在美国系列号10/105,623中所描述的可以用作这些施用方法的油墨。在碳纳米管的预定图案在基材上形成后，用于增加粘性的化学试剂可以去除，以通过在合适气氛中干燥基材或燃烧化学试剂而获得合适的导电率和透光率。该加工步骤将印刷到基材上的碳纳米管转移进入类似于通过将碳纳米管水溶液应用到基材上所获得那样的网状结构中。为保护由此形成的有图案碳纳米管膜，可以在基材的全部表面上应用粘合剂。粘合剂渗入到其上形成有碳纳米管膜的基材部分的网状结构中，直接覆盖碳纳米管布线线路之间的基材上。任何基材都可以用作该生产方法中使用的基材。绝缘层可以在粘合剂层上形成，从而多层碳纳米管布线也可以形成。该方法对于降低所使用碳纳米管的用量很有效，并提供一种平面装置半成品，或者它可以包括在随后加工步骤中形成平面层。
涂敷在基材上的连续碳纳米管膜可以通过放置与碳纳米管膜直接接触的有图案的“粘性的”表面(滚筒或板)而形成图案。如果粘性物质是以预定布线图案的倒像形成图案的，那么在布线中没有使用的膜部分将从膜上转移到转印辊或板上。当涂敷碳纳米管的基材的碳纳米管从转印辊或板上释放时，形成有图案的碳纳米管膜。
此外，碳纳米管的任意两个或多个形成图案的方法可以结合使用以便形成装置的布线结构。例如，电致发光显示装置的开关晶体管的栅极线和相关栅电极可以通过浸渍有碳纳米管的光致抗蚀剂的光刻加工方法形成。另一方面，显示装置的电致发光元件的正极可以通过在装置半成品上丝网印刷高粘度的碳纳米管溶液而形成，所述装置半成品具有在其中形成的栅极线和栅电极。
优选碳纳米管膜的碳纳米管的平均外部直径为3.5nm或更小。在形成上述方法的膜中使用的碳纳米管包括直的和弯曲的多壁纳米管(MWNTs)、直的和弯曲的双壁纳米管(DWNTs)、直的和弯曲的单壁纳米管(SWNTs)以及具有化学修饰以包括其它化合物和功能基团的碳纳米管。优选SWNTs，因为它们自然聚集以形成碳纳米绳。在碳纳米管膜中的碳纳米管体积浓度，即多少空间由碳纳米管填充，优选为5-50％、5-10％、10-15％、15-20％、20-25％、25-30％、30-35％、35-40％、40-45％、45-50％、10-20％、5-25％、5-20％、10-30％或5-30％，但是取决于碳纳米管布线的应用可以超出该范围。碳纳米管的纵横比可以在10～2000之间。
碳纳米管膜的表面电阻和体积阻力可以取决于所使用的碳纳米管的种类和浓度。膜的表面电阻可以为102～1010欧/平方(ohms/square)，优选在102～104欧/平方、104～106欧/平方、106～108欧/平方或108～1010欧/平方。膜的体积电阻可以为10-2～1010欧-厘米，优选10-2～100欧-厘米、100～102欧-厘米、102～104欧-厘米、104～106欧-厘米、106～108欧-厘米或者108～1010欧-厘米。优选碳纳米管的透光性为80％或以上(例如，85、90、95、97、99)，碳纳米管膜的霾值(haze value)为0.5％(例如0.4、0.3、0.2、0.1、0.01)或更低。但是具有低得多的透光率或高得多的霾值的碳纳米管膜都可以用于形成碳纳米管布线。碳纳米管膜的厚度可以为0.5nm和1μm之间(如0.8、1、2、3、5、10、25、50、100、150、500、750nm)，并优选为1～100nm。
为确保碳纳米管膜和绝缘覆盖层的网状结构而使用的粘合剂可以由聚合物材料制成，这可以从宽范围的天然或合成的聚合物树脂中选择。特殊聚合物可以根据强度、结构或需要应用领域的设计要求加以选择，如热塑性塑料、热固性聚合物、弹性体以及它们的组合。更具体而言，它们可以是聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚氨酯、聚酰亚胺、聚碳酸酯、聚对苯二甲酸乙二醇酯、纤维素、凝胶、壳多糖、多肽、多糖、多核苷酸以及它们的混合物。此外，可以使用陶瓷混合的聚合物、氧化膦和硫属化物。
导电填料可以加入到碳纳米管中。该填料可以是导电有机材料、无机材料或这些材料的组合物或混合物。导电有机材料可以是巴基球(buckeyball)、炭黑、富勒烯以及它们的组合物和混合物。导电无机材料可以是铝、锑、铍、镉、铬、钴、铜、掺杂金属氧化物、铁、金、铅、锰、镁、水银、金属氧化物、镍、铂、银、钢、钛、锌或它们的组合物或混合物。优选的导电材料包括锡-铟混合氧化物、锑-锡混合氧化物、氟掺杂的氧化锡、铝掺杂的氧化锌以及它们的组合物和混合物。
碳纳米管膜在粘合剂注入之前的真空退火还可以降低碳纳米管膜的电阻。这可以通过在碳纳米管绳连接处的碳纳米管的熔合而得到促进。因为纳米管绳自身具有差不多的类金属导电率，而且膜的总导电率可以通过纳米管绳连接处的形态确定，使连接处变厚的任何处理都增加碳纳米管膜的导电率。当金属的纳米大小粒子混入碳纳米管膜时，那些纳米粒子一经退火就迁移进入这些连接处。这也可以导致电阻降低。
更大金属粒子可以大量引入碳纳米管膜中。该复合膜也可以被认为是将碳纳米管加入到大的导电金属粒子的分散体中。当使用金属如银、金、铜、混合物、铝、镁以及它们的合金时，该结合在导电性上获得的提高超过纯碳纳米管膜约6个数量级或更大。然而，该复合膜的金属填料量比仅依赖于金属填料达到逾渗阈所需的量少得多。因此，复合碳纳米管膜可以保持适用于透明电极应用领域的透光率。或者，可以用炭黑粒子代替复合膜中的金属粒子。这种组合不能获得高导电性，但由于在膜中使用的碳纳米管膜的量降低，因而碳纳米管膜的制造成本可以降低。
由这些有图案的纳米复合涂层组成的布线可以用作如透明电极和用于平面显示、光电、接触屏、电致发光灯和EMI屏蔽的电路。
下面的实施例解释了本发明的一些具体实施方案，但这不应该看作是对本发明范围的限制。
实施例
下面参考图1-4分别描述形成碳纳米管布线的四个实施例。下面实施例只是用于解释目的，而不是限制对于上述有图案碳纳米管膜形成的概要性说明。
实施例1
首先，将购买的SWNTs通过包括酸回流、水洗涤、离心和微过滤的处理步骤纯化。然后，纯化的SWNTs混入异丙醇(IPA)和水的溶液中以形成碳纳米管涂层溶液。SWNT固体含量(重量)为10～100ppm的范围。IPA与水的重量比为1∶3～3∶1，取决于涂层所需的干燥速率。一旦获得较好的稳定分散，SWNT分散体的粘度通过加入足够量的聚丙烯酸、粘度调节剂(Acrysol ASE75，Rohm & Hass生产)而增加以形成具有适于照相凹板式涂敷粘度(例如，约1000cP)的涂层组合物。使用有图案的照相凹板辊将该碳纳米管涂层溶液印刷到清澈的塑料膜上(例如，聚醚砜)。然后，通过加热去除IPA/水和粘度调节剂，留下已形成图案的固结碳纳米管膜。然后使用喷雾技术应用电介质粘合剂涂层(例如，溶解在乙酸乙酯中的丙烯酸树脂)。粘合剂涂层渗入到碳纳米管膜中以改善粘附力和机械性质。所得的有图案电极或电路表现出良好的透明性和低的电阻。该方法在图1中示意性示出。
实施例2
首先，购买的SWNTs通过包括酸回流、水洗涤、离心和微过滤的处理步骤纯化。然后，将纯化的SWNTs混入异丙醇(IPA)和水的溶液中以形成碳纳米管涂层溶液。SWNT的固体含量(重量)为10～100ppm的范围。IPA与水的重量比为1∶3～3∶1，这取决于涂层所需的干燥速率。然后使用喷雾技术将SWNT涂层应用到清澈的塑料膜上(例如，聚酯膜如来自DupontTeijin Films的PET或PEN膜)。该基材加热到60℃以提高IPA/水的干燥速率。采用足够厚度的固结碳纳米管以获得所需的电阻(例如500欧/平方)。然后，使用丝网印刷技术印刷粘合剂涂层如溶解在乙酸乙酯中的丙烯酸树脂。粘合剂涂层渗入到碳纳米管膜的所选择区域中以改善粘附力和机械强度。溶剂通过加热去除。然后，通过喷洗技术并使用水和Triton X-100表面活性剂的混合物将未保护碳纳米管膜区域去除。所得的有图案的电极或电路表现出良好的透明性和低的电阻。该方法在图2中示意性示出。
实施例3
首先，购买的SWNTs通过包括酸回流、水洗涤、离心和微过滤的处理步骤纯化。然后，纯化的SWNTs混入异丙醇(IPA)和水的溶液中以形成碳纳米管涂层溶液。SWNT固体含量为10～100ppm的重量范围。IPA与水的重量比为1∶3～3∶1，这取决于涂层所需的干燥速率。然后使用喷雾技术将SWNT涂层应用到玻璃基材上。该基材加热到60℃以提高IPA/水的干燥速率。采用足够厚度的固结碳纳米管以获得所需的电阻(例如500欧/平方)。然后，使用Meyer棒涂敷技术将来自HD Microsystems的可光限定(photodefinable)聚酰亚胺粘合剂如HD-4000系列应用到固结碳纳米管膜上。光致抗蚀剂渗入到碳纳米管膜中。使用普通光刻技术将预定布线图案投影到充满碳纳米管的光致抗蚀剂上。当未固化的聚酰亚胺的区域通过显影剂漂洗时，碳纳米管膜的所选择区域被去除。所得有图案的电极或电路表现出良好的透明性和低的电阻。该方法在图3中示意性示出。
实施例4
使用喷雾技术将如实施例3中制备的涂敷溶液应用到玻璃基材上。该基材加热到60℃以提高IPA/水的干燥速率。采用足够厚度的固结碳纳米管以获得所需的电阻(例如500欧/平方)。高强度的汞灯源穿过掩膜投影到涂敷有碳纳米管的玻璃上。该曝光导致碳纳米管膜的所选择的区域的更高电阻，而且光学透明性没有很大降低。然后使用喷雾技术应用电介质粘合剂涂层(例如，溶解在乙酸乙酯中的丙烯酸树脂)。粘合剂涂层渗入到碳纳米管中以改善粘附力和机械性质。所得的有图案电极或电路表现出良好的透明性和低的电阻。该方法在图3中示意性示出。
在实施例2和3中，碳纳米管膜没有被完全去除。只要邻近的布线元件没有电连接，一定量的纳米管可以残留在基材上。
从此处描述的本发明的说明书和实施考虑，本发明的其它实施方案和用途对于本领域的技术人员将是很明显的。此处所引用的所有的参考文献，包括所有的出版物、美国专利以及包括现有文献的专利申请都逐一并完全地并入此处参考。要指出的是说明书和实施例都只是由下面权利要求所指出的本发明的真正范围和本质的示例而已。

Claims (41)

1.一种碳纳米管布线，包括：
基材；和
位于所述基材上并包含碳纳米管的有图案的布线线路或电极。
2.如权利要求1所述的碳纳米管布线，其中布线线路或电极还包括粘合剂或光致抗蚀剂。
3.如权利要求1所述的碳纳米管布线，其中碳纳米管具有3.5nm或以下的外部直径。
4.如权利要求1所述的碳纳米管布线，其中布线线路或电极还包括金属填料。
5.如权利要求4所述的碳纳米管布线，其中金属填料包括银、金、铜或它们的组合。
6.如权利要求1所述的碳纳米管布线，其中布线线路或电极具有102～104欧/平方的表面电阻。
7.如权利要求1所述的碳纳米管布线，其中布线线路或电极具有10-2～100欧-厘米的体积电阻。
8.如权利要求1所述的碳纳米管布线，其中布线线路或电极具有80％或更高的透过率。
9.如权利要求1所述的碳纳米管布线，其中布线线路或电极具有5～50体积％的碳纳米管浓度。
10.如权利要求1所述的碳纳米管布线，还包括位于布线线路或电极上的绝缘层。
11.如权利要求1所述的碳纳米管布线，其中基材是玻璃基材、聚合物基材、硅片、聚酯胶片或它们的组合物。
12.一种使碳纳米管涂层形成图案的方法，它包括如下步骤：
提供碳纳米管溶液；
将溶液应用到基材上以在基材上形成固结碳纳米管膜；
选择性地采用粘合剂浸渍碳纳米管膜；和
从基材上至少去除没有被粘合剂浸泽的部分碳纳米管膜。
13.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括纯化所述碳纳米管。
14.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括在水和醇的溶液中分散碳纳米管。
15.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中应用溶液的步骤包括采用雾化器喷雾所述溶液。
16.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中浸渍碳纳米管膜的步骤包括在具有预定图案的碳纳米管膜上印刷所述粘合剂。
17.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中去除碳纳米管的步骤包括采用水和表面活性剂的混合物喷洗碳纳米管膜。
18.一种使碳纳米管涂层形成图案的方法，它包括如下步骤：
提供碳纳米管溶液；
将溶液应用到基材上以在基材上形成固结碳纳米管膜；
采用光致抗蚀剂浸渍碳纳米管膜；
将预定图案投影到浸渍有光致抗蚀剂的碳纳米管膜上以保护部分碳纳米管膜；和
从基材上去除没有被投影保护的至少部分碳纳米管膜。
19.如权利要求18所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括纯化碳纳米管。
20.如权利要求18所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括在水和醇的溶液中分散碳纳米管。
21.如权利要求18所述的使碳纳米管涂层形成图案的方法，其中应用溶液的步骤包括采用雾化器喷雾所述溶液。
22.如权利要求18所述的使碳纳米管涂层形成图案的方法，其中浸渍碳纳米管膜的步骤包括在基材上棒涂敷光致抗蚀剂或在基材上旋涂光致抗蚀剂。
23.如权利要求18所述的使碳纳米管涂层形成图案的方法，其中去除碳纳米管膜的步骤包括采用光致抗蚀剂的显影剂溶液去除碳纳米管膜的未保护部分。
24.一种使碳纳米管涂层形成图案的方法，它包括如下步骤：
提供碳纳米管溶液；
将溶液应用到基材上以在基材上形成固结碳纳米管膜；
将碳纳米管膜在穿过掩膜的光源下曝光；和
使用粘合剂浸渍曝光的碳纳米管膜。
25.如权利要求25所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括纯化。
26.如权利要求25所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括在水和醇的溶液中分散所述碳纳米管。
27.如权利要求25所述的使碳纳米管涂层形成图案的方法，其中应用溶液的步骤包括采用雾化器喷雾溶液。
28.如权利要求25所述的使碳纳米管涂层形成图案的方法，其中浸渍碳纳米管膜的步骤包括喷涂所述粘合剂。
29.一种使碳纳米管涂层形成图案的方法，它包括如下步骤：
提供包括碳纳米管和溶剂的涂层混合物；
在基材上应用涂层混合物以形成预定的图案；
从印刷在基材上的涂层混合物中去除溶剂以在基材上留下固结碳纳米管膜；和
采用粘合剂浸渍碳纳米管膜。
30.如权利要求30所述的使碳纳米管涂层形成图案的方法，其中提供涂层混合物的步骤包括纯化。
31.如权利要求30所述的使碳纳米管涂层形成图案的方法，其中提供涂层混合物的步骤包括在水的溶液中分散碳纳米管。
32.如权利要求30所述的使碳纳米管涂层形成图案的方法，其中应用涂层混合物的步骤包括丝网印刷、喷印、照相凹板辊涂印刷。
33.如权利要求30所述的使碳纳米管涂层形成图案的方法，其中去除溶剂的步骤包括加热基材。
34.如权利要求30所述的使碳纳米管涂层形成图案的方法，其中浸渍碳纳米管膜的步骤包括喷涂所述粘合剂。
35.如权利要求30所述的使碳纳米管涂层形成图案的方法，其中提供涂层混合物的步骤包括加入粘度调节剂。
36.一种使碳纳米管涂层形成图案的方法，它包括如下步骤：
提供碳纳米管溶液；
将溶液应用到基材上以在基材上形成固结碳纳米管膜；
从基材上至少去除部分碳纳米管膜；
采用粘合剂浸渍残留在基材上的碳纳米管膜。
37.如权利要求37所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括纯化所述碳纳米管。
38.如权利要求37所述的使碳纳米管涂层形成图案的方法，其中提供碳纳米管溶液的步骤包括在水和醇的溶液中分散碳纳米管。
39.如权利要求37所述的使碳纳米管涂层形成图案的方法，其中应用溶液的步骤包括使用雾化器喷涂溶液。
40.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中浸渍碳纳米管膜的步骤包括喷涂粘合剂。
41.如权利要求12所述的使碳纳米管涂层形成图案的方法，其中去除碳纳米管的步骤包括将部分碳纳米管膜从基材上转移到粘性表面上。
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