CN101356115B - 形成纳米尺寸簇群并由此建立有序结构的方法 - Google Patents
形成纳米尺寸簇群并由此建立有序结构的方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000011368 organic material Substances 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 230000005855 radiation Effects 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 6
- 239000012237 artificial material Substances 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000005445 natural material Substances 0.000 claims description 2
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000002096 quantum dot Substances 0.000 abstract 2
- 239000011148 porous material Substances 0.000 abstract 1
- 239000011022 opal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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Abstract
形成纳米尺寸簇群的本发明方法包括:引入含簇群形成材料的溶液到基片材料中所含的天然或人造源的纳米孔隙中,并随后曝光所述溶液到激光辐射脉冲的作用下,其方式是,低温等离子体在其存在的区域中产生气态介质,其中在等离子体冷却的同时,利用它在液态基片上产生的结晶,簇群材料返回成纯材料,从而形成与基片材料连接的单晶量子圆点。所述方法可以形成二维和三维簇群栅格以及由不同材料互相连接的簇群。本发明还能在基片的纳米孔腔中制作不同材料的布线以及从玻璃上分布的有机材料的溶液微滴中制作量子圆点。
Description
技术领域
本发明涉及电子学,尤其是涉及形成纳米尺寸簇群并由此建立用于信息信号的传输,转换,存储和产生的纳米电子结构的技术。
背景技术
一种用于形成纳米尺寸簇群并由此建立纳米电子结构的方法是已知的,该方法是把合适的物质引入到一些天然或人造材料的结构中存在的纳米尺寸空腔中(例如,见1999年3月22日至25日在Oxford举行的XI国际半导体材料会议上报告的文章中所列举的,V.N.Bogomolov:“A crystalline(amorphous)silicon 3-D bubble lattice ina synthetic opal matrix”)。
按照这个方法,利用碲的熔体或溶液在压力下填充到合成蛋白石中的孔隙,从而在蛋白石基岩中得到碲的纳米簇群栅格。
然而,由于存在互相连接这些纳米孔隙的通道的网络,利用这个方法确保建立孤立簇群的栅格是困难的。
利用这个方法,从基片的不同层中的纳米孔隙中排列的孤立簇群建立三维结构也是不可能的。
此外,这个方法产生的簇群是按照随机方式排列的,蛋白石体内的纳米尺寸空腔也是如此;因此,建立电学性质和光学性质是均匀的离散纳米单元并把它们组织成有序结构是不可能的。
在现有技术中已知一种形成纳米簇群的栅格并由此建立二维栅格的方法(例如,见RF Patent No.2214359,IPC7:B 8 2B 3/00)。
已知的方法允许形成大小尺寸是均匀的簇群,并安排它们在二维栅格的节点上具有相同的间距。
然而,这个方法在技术上是复杂的,具有低的效能,且不允许建立三维栅格。
此外,在现有技术中已知一种在薄片材料上形成预定拓扑的金属化图像的方法(例如,见PCT publication No.WO 01/38940 A2,IPC:G03F 7/26)。按照这个方法,金属粒子是从放置在薄片材料上方的玻璃板上的层中运动,并在激光辐射脉冲的作用下沉积下来。
然而,利用这种方法,不可能在薄片材料上形成与在其上面运动的大尺寸粒子相关的簇群或布线。
发明内容
本发明的目的是提供这样一种用于形成纳米尺寸簇群并由此建立有序结构的方法,该方法允许在基片的表面上和在预定深度的基片体内形成簇群,并从该簇群中建立三维结构。
因此,实现该目的是借助于一种用于形成纳米尺寸簇群并由此建立有序结构的方法,所述方法包括以下步骤:引入形成簇群的材料到具有预定物理参数的一些天然或人造材料的基片中,并产生具有可控性质的复合物,按照本发明,形成簇群的材料被引入到基片材料中作为溶液成分,在基片的预定点,该溶液曝光在激光辐射脉冲的作用下,因此,在激光光斑区内形成低温等离子体,从而在等离子体存在的区域内产生气态介质,等离子体用于减少簇群材料中的离子成为纯材料,因此,在等离子体冷却的同时,所述簇群形成与基片材料连接的单晶量子圆点和布线。
利用这种用于形成纳米尺寸簇群并由此建立结构的方法,就不需要复杂和昂贵的专用设备以及引入形成簇群的材料进入基片的特殊技术。
最好是,利用金属,非金属和半导体作为形成簇群的材料。
利用这种用于形成纳米尺寸簇群并由此建立结构的方法,可以提供用于形成簇群作为单晶的条件。
最好是,利用这样的材料制作基片,该材料对于所用波长的激光辐射是透明的,并且在其存在的温度下对溶液是化学惰性,而制成的溶液能够充分湿润基片材料,吸收预定波长的激光辐射,并且还能够在低温等离子体的作用下形成原子氢。
利用这种用于形成纳米尺寸簇群并由此建立结构的方法,可以在基片内形成它们。
最好是,在激光辐射作用到被引入基片材料中的溶液之前,利用对这种辐射是透明的材料覆盖该基片。
利用这种用于形成纳米尺寸簇群的方法,可以确保激光辐射对溶液的定向作用。
最好是,引入溶液到基片材料中的天然或人造的起源的多个纳米孔隙中,聚焦激光束到基片表面的预定区域上,并且诱发簇群形成在位于激光光斑区内的那些纳米孔隙的开孔中。
利用这种用于形成纳米尺寸簇群的方法,同时形成纳米尺寸簇群发生在位于激光光斑区内的所有纳米孔隙中。
最好是,聚焦激光束到基片体内一个相同层的不同点上,以使簇群形成在位于这层中的那些纳米孔隙的通道中。
利用这种用于形成纳米尺寸簇群的方法,可以把它们形成在纳米孔隙中的预定深度。
最好是,在多个基片层中从最低的一层开始,相继地形成簇群,从而从簇群建立三维结构,在相邻层中形成簇群的步骤之间,填充该溶液到基片的纳米孔隙中。
利用这种用于形成纳米尺寸簇群的方法,可以由此建立空间的三维结构。
最好是,在每个纳米孔隙中,利用不同的材料形成连接的簇群,并在从第一种材料形成簇群之后,利用含不同材料的溶液填充纳米孔隙。
利用这种用于形成纳米尺寸簇群的方法,可以从用不同材料形成的簇群中建立三维结构。
最好是,具有穿通的纳米孔隙的基片放置在薄片材料上,利用溶液填充那些纳米孔隙,激光辐射脉冲作用在该溶液上,从而在与纳米孔隙的出口开孔相对着的薄片材料的表面上形成簇群。
利用这种用于形成纳米尺寸簇群的方法,可以在薄片材料的表面上建立二维纳米簇群栅格。
最好是,在基片的表面上形成多个延伸的沟槽,每个沟槽有具有纳米尺寸凹口的预定拓扑,利用含产生簇群的材料的溶液填充该沟槽,激光辐射脉冲作用到沟槽的每个点上,从而在沟槽的凹口内形成布线。
利用这种用于形成纳米尺寸的有序结构的方法,可以形成与基片材料连接的任意拓扑的布线。
最好是,从基片的有机材料和溶液两者中产生精细分散的混合物,该混合物以均匀层施加到玻璃上,聚焦激光束到该层的预定区域,以使在激光光斑内形成簇群,施加到玻璃上的薄膜发生聚合作用,并形成金属-聚合物复合体。
利用这种用于形成纳米尺寸簇群的方法,可以简化制作用于信息显示的大屏幕的技术。
附图说明
参照附图详细地描述本发明,这些附图展示本发明的具体实施例,但不是对本发明的限制,其中:
图1说明本发明的方法,其中在人工的起源的纳米孔隙中建立二维簇群栅格;
图2说明本发明的方法,其中在人工的起源的纳米孔隙中建立三维簇群栅格;
图3说明本发明的方法,其中在从人工的起源的纳米孔隙的连接簇群中建立三维栅格;
图4和图5(图4中的截面A-A)说明本发明的方法,其中在基片的表面上形成预定拓扑的布线,为的是与它进行连接;
图6说明本发明的方法,其中在薄片材料的表面上建立二维纳米簇群栅格;
图7说明本发明的方法,其中在施加到玻璃上的有机材料层内形成纳米簇群;和
图8说明利用在液态基片上高速率结晶的由本发明方法产生的铜单晶。
具体实施方式
按照以下的方式完成用于形成纳米尺寸簇群(nano-dimensionalcluster)并由此建立有序结构的本发明方法。
在对所用波长的激光辐射2是透明的材料基片1上,利用任何已知的方法,尤其是利用纳米光刻法,制作二维栅格,因此,二维栅格是由相同横截面具有预定深度的纳米孔隙3构成,该纳米孔隙垂直于基片的表面4。
包含形成簇群5的材料的溶液,例如,这种材料的盐的形式,被引入到纳米孔隙3中。然后,从基片1的表面4上去除这种溶液的剩余部分,并利用对激光辐射是透明的材料,例如,利用玻璃6覆盖这个表面。
激光辐射2的脉冲被引导通过在纳米孔隙3的溶液中的玻璃6,该脉冲功率足以在位于激光光斑内的纳米孔隙3中填充的溶液中产生低温等离子体,以及在脉冲作用期间在它存在的区域内产生气态介质。
由于它在原子氢气氛中的液态基片上的结晶,簇群材料在这个介质中被恢复成纯材料。这种情况的发生是因为,溶液成分的选取考虑到在低温等离子体的作用下形成原子氢。
因此,簇群是在原子氢的保护气氛下发生结晶,这允许它在低浓度的混合物并且不存在其氧化过程的条件下达到高的结构完整性。
图8表示利用本发明方法产生的铜单晶,它是在原子氢的保护气氛下的液态基片上的高速率结晶。
类似的过程发生在建立三维簇群栅格的条件下(图2)。在这种情况下,簇群首先形成在基片的低层,然后,再次利用该溶液填充纳米孔隙,从而在基片的高层形成簇群。
本发明的方法允许在基片的体内从不同的材料形成连接的簇群(图3)。为此目的,在基片的低层中形成簇群之后,利用含不同材料的溶液填充纳米孔隙以形成簇群。
利用本发明的方法,也可以在薄片材料的光滑表面上建立二维簇群栅格(图6)。
为此目的,具有穿通的纳米孔隙3的基片1放置在薄片材料的表面上,溶液被引入到纳米孔隙中,利用玻璃6覆盖基片1,然后,重复以上描述的过程。
本发明的方法允许在基片的表面上得到任何预定拓扑的布线7(图4和5)。在这种情况下,溶液被引入到纳米尺寸沟槽中,然后,重复以上描述的过程。利用这个方法,也可以得到两种材料连接的布线,正如以上我们已描述过的从不同材料得到的连接的簇群。
利用本发明的方法,可以在施加到玻璃上的均匀层8内的有机材料内形成簇群(图7)。在这种情况下,首先从基片的有机材料中产生精细分散的混合物,然后,在玻璃上施加均匀层的溶液。当激光辐射脉冲作用到这层的预定部分时,该溶液的微小气泡与激光束相互作用。由于以上描述的过程,簇群形成在施加到玻璃上的层中。
工业应用
形成纳米尺寸簇群并由此建立有序结构的本发明方法允许从与基片材料连接的单晶量子圆点和布线中制成二维栅格和三维栅格。
Claims (10)
1.一种用于形成纳米尺寸簇群并由此建立有序结构的方法,所述方法包括以下步骤:引入形成簇群的材料到具有多个纳米孔隙的一些天然或人造材料的基片中,并产生具有可控性质的有序结构,其特征是,形成簇群的材料被引入到基片材料的纳米孔隙中作为溶液成分,然后,填充到纳米孔隙中的溶液被曝光在激光光斑区内的激光辐射脉冲的作用下,因此,在形成在溶液中的低温等离子体,从而在存在等离子体的区域内产生气态介质,用于减少簇群材料中的离子成为纯材料,因此,在等离子体冷却的同时,所述簇群形成与基片材料连接的单晶量子圆点和布线。
2.按照权利要求1的方法,其特征是,金属、非金属和半导体被用作形成簇群的材料。
3.按照权利要求1的方法,其特征是,基片是由这样的材料制成,该材料对于所用波长的激光辐射是透明的,并且在其存在的温度下对溶液是化学惰性的,且制成的溶液能够充分湿润基片材料、吸收预定波长的激光辐射,而且,还能够在低温等离子体的作用下形成原子氢。
4.按照权利要求3的方法,其特征是,在激光辐射作用到被引入到基片材料中的溶液上之前,利用对这种辐射是透明的材料覆盖该基片。
5.按照权利要求1的方法,其特征是,聚焦激光束到基片体内一个相同层的不同点上,以使簇群形成在位于这层个中的那些纳米孔隙的通道中。
6.按照权利要求5的方法,其特征是,在多个基片层中从最低的一层开始,相继地形成簇群,并且用不同基片层中的纳米孔隙中的簇群建立二维或三维结构。
7.按照权利要求6的方法,其特征是,在每个纳米孔隙中,利用不同的材料形成连接的簇群,并在用第一种材料形成簇群之后,利用含不同材料的溶液填充纳米孔隙。
8.按照权利要求1的方法,其特征是,具有穿通的纳米孔隙的基片放置在薄片材料上,利用溶液填充那些纳米孔隙,所述溶液曝光在激光辐射脉冲的作用下,从而使在与纳米孔隙的出口开孔相对着的薄片材料的表面上形成簇群。
9.按照权利要求4的方法,其特征是,在基片的表面上形成多个延伸的沟槽,每个沟槽有具有纳米尺寸凹口的预定拓扑,利用含产生簇群的材料的溶液填充所述沟槽,且沟槽中的每个点曝光在激光辐射脉冲的作用下,以使在沟槽的凹口内形成布线。
10.按照权利要求3的方法,其特征是,用基片的有机材料和溶液两者产生精细分散的混合物,所述混合物以均匀层施加到玻璃上,聚焦激光束到所述层的预定区域,以使在激光光斑的范围内形成簇群,因此,施加到玻璃上的薄膜发生聚合作用,并因此形成金属-聚合物复合体。
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