CN103236442B - 薄膜晶体管及其制造方法、阵列基板、电子装置 - Google Patents

薄膜晶体管及其制造方法、阵列基板、电子装置 Download PDF

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CN103236442B
CN103236442B CN201310143732.1A CN201310143732A CN103236442B CN 103236442 B CN103236442 B CN 103236442B CN 201310143732 A CN201310143732 A CN 201310143732A CN 103236442 B CN103236442 B CN 103236442B
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tft
film transistor
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CN103236442A (zh
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孙拓
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BOE Technology Group Co Ltd
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Abstract

本发明实施例公开了一种薄膜晶体管及其制造方法，包括该薄膜晶体管的阵列基板，以及包括该薄膜晶体管或设有该阵列基板的电子装置，属于显示技术领域。解决了现有技术难以将半导体纳米材料应用到显示领域中的技术问题。该薄膜晶体管包括：栅极、栅极绝缘层、有源层、源极和漏极，所述有源层由包括半导体纳米材料和光刻材料的混合物形成。该薄膜晶体管的制造方法，包括：制备包括半导体纳米材料与光刻材料的混合物；将所述混合物涂覆于基板之上，经曝光、显影，形成图案化的有源层。本发明可应用于主动矩阵液晶显示器或有源矩阵有机发光二极体面板。

Description

薄膜晶体管及其制造方法、阵列基板、电子装置
技术领域
本发明属于显示技术领域，具体涉及一种薄膜晶体管及其制造方法，包括该薄膜晶体管的阵列基板，以及包括该薄膜晶体管或设有该阵列基板的电子装置。
背景技术
随着显示技术的不断发展，薄膜晶体管液晶显示器(Thin Film TransistorLiquid Crystal Display，简称TFT-LCD)已在平板显示领域中占据了主导地位，薄膜晶体管液晶显示器也称为主动矩阵液晶显示器(Active Matrix Liquid Crystal Display，简称AMLCD)。TFT-LCD包括多个像素单元，每个像素单元都设置有薄膜晶体管(TFT)用于控制像素单元的显示。此外，有源矩阵有机发光二极体面板(Active Matrix/Organic LightEmitting Diode，简称AMOLED)等显示装置，以及X射线探测器等电子设备也需要应用薄膜晶体管来实现其功能。
另一方面，半导体纳米线、半导体碳纳米管、半导体石墨烯等半导体纳米材料具有制造成本低廉，制造规模大等优点，而且其本身就是半导体，如果应用于TFT-LCD中，作为TFT的有源层，则可以显著降低TFT-LCD的生产成本。但是半导体纳米材料的尺寸非常小，比如，一般纳米线的宽度小于100nm，又如，石墨烯尺度约1μm，难以在阵列基板上有序的排布。纳米压印或电场排布的方式由于工艺成本很高，而不适用于TFT-LCD的大规模生产中。因此，现有技术难以将半导体纳米材料应用到TFT-LCD中，以降低TFT-LCD的生产成本。
发明内容
本发明实施例提供了一种薄膜晶体管及其制造方法、包括该薄膜晶体管的阵列基板，以及包括该薄膜晶体管或设有该阵列基板的电子装置，解决了现有技术难以将半导体纳米材料应用到显示领域中的技术问题。
为达到上述目的，本发明的实施例采用如下技术方案：
本发明提供了一种薄膜晶体管，包括：栅极、栅极绝缘层、有源层、源极和漏极，所述有源层由包括半导体纳米材料和光刻材料的混合物形成。
优选的，所述半导体纳米材料包括半导体纳米线、半导体碳纳米管或半导体纳米级石墨烯中的一种或几种。
优选的，所述半导体纳米线的材料为硫化镉、氧化锌、硅、镉、氮化镓、磷化铟中一种或几种。
优选的，所述光刻材料为电子束光刻胶聚甲基丙烯酸甲酯(polymethylmethacrylate，简称PMMA)或光敏性聚酰亚胺（polyimide，简称PI）。
进一步，所述混合物还包括溶剂，所述半导体纳米材料在所述混合物中的含量为1mg/mL至50mg/mL；优选为5mg/mL至30mg/mL；更优选为10mg/mL至20mg/mL。
进一步，所述半导体纳米材料与所述光刻材料的质量比为1:5至1:250；优选为1:25至1:150；更优选为1:50至1:100。
本发明还提供了一种阵列基板，所述阵列基板包括上述薄膜晶体管。
进一步，所述阵列基板包括衬底基板，所述衬底基板之上设置有上述薄膜晶体管。
进一步，所述阵列基板还包括设置在衬底基板之上的像素电极，所述像素电极与所述薄膜晶体管的漏极电相连。
进一步，所述阵列基板还包括设置在所述栅极绝缘层上的像素限定层，所述像素限定层位于所述像素电极的四周。
进一步，所述栅极绝缘层上设有过孔，所述栅极层的图形的局部与所述源漏极层的图形的局部通过所述过孔相连。
本发明还提供了一种电子装置，包括上述的薄膜晶体管或阵列基板。
本发明还提供了一种薄膜晶体管的制造方法，包括：
制备包括半导体纳米材料与光刻材料的混合物；
将所述混合物涂覆于基板之上，经曝光、显影，形成图案化的有源层。
其中，制备所述混合物的方法包括：
将半导体纳米材料、光刻材料和溶剂混合，通过搅拌或超声波的方法混合均匀；
或者，将半导体纳米材料预先分散于溶剂中，然后将混有纳米材料的溶剂与光刻材料混合均匀。
与现有技术相比，本发明所提供的上述技术方案具有如下优点：将半导体纳米材料与光刻材料混合，使纳米材料均匀的分散在光刻材料中，将其混合物涂覆在基板上形成有源层薄膜，经曝光、显影工艺得到图案化的有源层。在有源层中的半导体纳米材料能够相互连接，形成若干导电通路。因此，本发明通过简单易行的方式实现了利用半导体纳米材料作为薄膜晶体管的有源层，从而降低了TFT-LCD的生产成本。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的实施例所提供的薄膜晶体管在阵列基板中的示意图；
图2a至图2f为本发明的实施例所提供的包括薄膜晶体管的阵列基板的制造过程示意图；
图3为本发明的实施例所提供的薄膜晶体管中有源层的示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
本发明所提供的薄膜晶体管(TFT)可应用于AMLCD或AMOLED的阵列基板中，薄膜晶体管可以是顶栅型、底栅型、刻蚀阻挡型、背沟道刻蚀型、共平面型或者其他任意的结构形式。在本发明的实施例，以底栅型薄膜晶体管为例。如图1所示，该TFT包括设置于衬底基板1上的栅极21、栅极绝缘层3、有源层5、源极41和漏极42，其中有源层5由包括半导体纳米材料和光刻材料的混合物形成。其中，半导体纳米材料优选为半导体纳米线、碳纳米管或半导体纳米级石墨烯中的一种或几种。如果选用半导体纳米线，则可以是硫化镉、氧化锌、硅、镉、氮化镓、磷化铟中一种或几种。光刻材料优选为电子束光刻胶PMMA或光敏性PI。
具体是将半导体纳米材料以一定浓度比例混合在液态光刻材料中，将混有半导体纳米材料的光刻材料通过大功率超声波或搅拌的方式，使半导体纳米材料均匀分散于光刻材料中，制备成本发明实施例中所用到的混合物。在将半导体纳米材料混入光刻材料中之前，还可以先利用苯、乙醇或丙酮等有机溶剂将半导体纳米材料稀释，再混入光刻材料中进行搅拌，这样纳米材料更加容易均匀的分散在光刻材料中。半导体纳米材料在混合物中的含量优选为1mg/mL至50mg/mL；更优选为5mg/mL至30mg/mL；最优选10mg/mL至20mg/mL。该混合物形成有源层之后，半导体纳米材料与光刻材料的质量比为1:5至1:250，优选为1:25至1:150，更优选为1:50至1:100。
将半导体纳米材料如碳纳米管分散于有机溶剂如乙醇中，混合均匀，将混有半导体纳米材料的有机溶剂加入到液态光刻材料如聚甲基丙烯酸甲酯中，采用超声波处理10分钟到60分钟，使各组分混合均匀。将含有半导体纳米材料和光刻材料的混合物涂覆于基板形成有源层薄膜，对上述基板进行曝光。本发明实施例中，采用电子束正胶聚甲基丙烯酸甲酯，采用电子束曝光，被电子束曝光的区域中的薄膜经显影工艺被去除，未曝光区域的薄膜保留，即形成图案化的有源层。若采用其他光刻材料，可根据光刻材料的性质选择曝光方式，如紫外光曝光。
本发明实施例还提供一种阵列基板，包括衬底基板1以及设置于衬底基板1上的像素电极6和上述TFT。如图1所示，TFT中由半导体纳米材料和光刻材料的混合物形成的有源层5设置于栅极绝缘层3上，图1中有源层5的左半部分覆盖TFT的源极41和漏极42，即作为TFT的有源层。同时，像素电极6设置于图1中有源层5的右半部分之上，由半导体纳米材料和光刻材料的混合物形成的有源层5表面较为平滑，因此可以省去平坦层，而将像素电极6直接设置在有源层5上。此外，因为有源层5本身就可以导电，能够实现漏极42与像素电极6之间的电连接，所以还进一步省去了现有技术中在绝缘的平坦层上刻蚀过孔的步骤。
进一步，该阵列基板还包括设置在栅极绝缘层3上的像素限定层7（PixelDefining Layer，简称PDL），像素限定层7位于像素电极6的四周，以限定出像素单元的区域，从而使本实施例中的阵列基板能够用于AMOLED中。
可选的，栅极绝缘层3上还可以设置过孔30，使栅极层图形的局部与源漏极层图形的局部能够通过所述过孔相连。当阵列基板上的电路设计比较复杂时，就会出现多层导电交叉排布的现象，本发明实施例中，把栅极层图形及源漏极层图形的一部分作为导线使用，并通过栅极绝缘层3上的过孔30形成电连接，从而减少导线的层数，简化阵列基板的制造过程。
本发明还提供了一种阵列基板的制造方法，包括：
S1：如图2a所示，在衬底基板1上形成栅极层的图形，栅极层的图形包括栅极21。
具体的，在衬底基板1上沉积栅极层，然后在栅极层上涂布一层光刻胶，经过曝光、显影等工艺之后，采用湿法刻蚀形成栅极层的图形，并剥离剩余的光刻胶，最终形成包括栅线（图中未示出）和栅极21的栅极层图形。
S2：在基板上形成栅极绝缘层。
S3：如图2b所示，利用构图工艺，在栅极绝缘层3上形成过孔30。
这样，后续形成的源漏极层图形的一部分就可以通过该过孔30与栅极层图形的一部分相连，从而减少导线的层数，简化阵列基板的制造过程。
当然，本步骤S3是可选步骤，在阵列基板上的电路设计本身就比较简单的情况下，可以省略本步骤S3。
S4：如图2c所示，在基板上形成源漏极层的图形，源漏极层的图形包括源极和漏极。
具体的，在基板上沉积源漏极层，然后在源漏极层上涂布一层光刻胶，经过曝光、显影等工艺之后，采用湿法刻蚀形成源漏极层的图形，并剥离剩余的光刻胶，最终形成包括数据线（图中未示出）、源极41和漏极42的源漏极层的图形，其中源极41和漏极42分别位于栅极21的两侧。
S5：如图2d所示，在基板上形成有源层5。
先制备包括半导体纳米材料与光刻材料的混合物。具体的制备方法是将半导体纳米材料、光刻材料和溶剂混合，通过搅拌或超声波的方法混合均匀。或者，该混合物的制备方法也可以是将半导体纳米材料预先分散于溶剂中，然后将混有纳米材料的溶剂与光刻材料混合均匀。
再将制备好的混合物涂覆于基板之上，经曝光、显影，形成图案化的有源层5，有源层5覆盖源极41和漏极42。
S6：如图2e所示，在有源层5上形成包括像素电极6的透明电极层的图形。
具体的，在基板上利用溅射工艺沉积透明电极层，该透明电极层材料优选为氧化铟锡（Indium Tin Oxide，简称ITO），然后在透明电极层上涂布一层光刻胶，经过曝光、显影等工艺之后，采用湿法刻蚀形成包括像素电极6的透明电极层的图形，并剥离剩余的光刻胶，最终形成的像素电极6位于有源层5的右半部分上。
由半导体纳米材料和光刻材料的混合物形成的有源层5表面较为平滑，因此可以省去平坦层，而将像素电极6直接设置在有源层5上。此外，因为有源层5本身就可以导电，能够实现漏极42与像素电极6之间的电连接，所以还进一步省去了现有技术中在绝缘的平坦层上形成过孔的步骤。
优选的，上述步骤S4和S6中可以选用同一种刻蚀液体对源漏极层和透明电极层进行湿法刻蚀，并且该刻蚀液体对透明电极层与源漏极层的刻蚀选择比应当尽可能的高，使步骤S6过程中快速刻蚀掉透明电极层，而不影响源漏极层原有的图形。这样，就能够以同一种刻蚀液体应用到步骤S4和S6中，从而简化了刻蚀液体的选择。
在有源层5上形成包括像素电极6的透明电极层的图形之后，还可以进一步包括：
S7：如图2f所示，在基板上形成像素限定层（PDL）7。
具体的，在基板上形成像素限定层薄膜，经过曝光、显影等工艺之后，得到像素限定层7，再经过烘干固化工艺之后，即可形成位于像素电极6的四周的像素限定层7，以限定出像素单元的区域。
本发明实施例提供的阵列基板及其制造方法中，将半导体纳米材料与光刻材料混合，使半导体纳米材料均匀的分散在光刻材料中，将混合物涂覆在阵列基板上形成薄膜，经曝光、显影等工艺形成图案化的有源层。有源层中半导体纳米材料能够相互连接，如图3所示，半导体纳米材料通常会连接成不规则曲线的形式，从而形成若干导电通路，以作为TFT中的有源层。因此，本发明实施例通过简单易行的方式实现了利用半导体纳米材料作为TFT的有源层，从而降低了TFT-LCD的生产成本。
本发明实施例还提供了一种电子装置，包括上述本发明实施例提供的TFT及阵列基板，该电子装置可以是液晶面板、电子纸、OLED面板、液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，也可以是X射线探测器等电子设备。
由于本发明实施例提供的电子装置与上述本发明实施例所提供的TFT及阵列基板具有相同的技术特征，所以也能产生相同的技术效果，解决相同的技术问题。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。

Claims (10)

1.一种薄膜晶体管，包括：栅极、栅极绝缘层、有源层、源极和漏极，其特征在于，所述有源层由包括半导体纳米材料和光刻材料的混合物形成，所述半导体纳米材料在所述有源层中相互连接。
2.根据权利要求1所述的薄膜晶体管，其特征在于，所述半导体纳米材料包括半导体纳米线、半导体碳纳米管或半导体纳米级石墨烯中一种或几种。
3.根据权利要求2所述的薄膜晶体管，其特征在于，所述半导体纳米线的材料为硫化镉、氧化锌、硅、镉、氮化镓、磷化铟中的一种或几种。
4.根据权利要求1所述的薄膜晶体管，其特征在于，所述光刻材料为电子束光刻胶聚甲基丙烯酸甲酯或光敏性聚酰亚胺。
5.根据权利要求1所述的薄膜晶体管，其特征在于，所述混合物还包括溶剂，所述半导体纳米材料在所述混合物中的含量为1mg/mL至50mg/mL。
6.根据权利要求1所述的薄膜晶体管，其特征在于，所述半导体纳米材料与所述光刻材料的质量比为1:5至1:100。
7.一种阵列基板，其特征在于，所述阵列基板包括如权利要求1-6任一项所述的薄膜晶体管。
8.一种电子装置，其特征在于，所述电子装置包括如权利要求1-6任一项所述的薄膜晶体管。
9.一种薄膜晶体管的制造方法，其特征在于，包括：
制备包括半导体纳米材料与光刻材料的混合物；
将所述混合物涂覆于基板之上，经曝光、显影，形成图案化的有源层。
10.根据权利要求9所述的制造方法，其特征在于，制备所述混合物的方法包括：
将半导体纳米材料、光刻材料和溶剂混合，通过搅拌或超声波的方法混合均匀；
或者，将半导体纳米材料预先分散于溶剂中，然后将混有纳米材料的溶剂与光刻材料混合均匀。
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