CN1666291A - 半导体存储装置中字线的锁存方法 - Google Patents
半导体存储装置中字线的锁存方法 Download PDFInfo
- Publication number
- CN1666291A CN1666291A CN038156946A CN03815694A CN1666291A CN 1666291 A CN1666291 A CN 1666291A CN 038156946 A CN038156946 A CN 038156946A CN 03815694 A CN03815694 A CN 03815694A CN 1666291 A CN1666291 A CN 1666291A
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- line
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- storage unit
- write
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- 230000015654 memory Effects 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000004044 response Effects 0.000 claims abstract description 11
- 230000000630 rising effect Effects 0.000 claims description 17
- 230000000977 initiatory effect Effects 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 description 5
- 230000001960 triggered effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/190,372 US6798712B2 (en) | 2002-07-02 | 2002-07-02 | Wordline latching in semiconductor memories |
US10/190,372 | 2002-07-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1666291A true CN1666291A (zh) | 2005-09-07 |
CN100476990C CN100476990C (zh) | 2009-04-08 |
Family
ID=29999865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038156946A Expired - Fee Related CN100476990C (zh) | 2002-07-02 | 2003-07-02 | 内存系统和内存系统作业的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6798712B2 (zh) |
EP (1) | EP1518244B1 (zh) |
JP (1) | JP4463680B2 (zh) |
KR (1) | KR100984373B1 (zh) |
CN (1) | CN100476990C (zh) |
AU (1) | AU2003281431A1 (zh) |
DE (1) | DE60316945T2 (zh) |
TW (1) | TWI310192B (zh) |
WO (1) | WO2004006261A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446550A (zh) * | 2010-09-30 | 2012-05-09 | 北京兆易创新科技有限公司 | 一种异步存储器跟踪计时的方法和装置 |
CN101719378B (zh) * | 2009-12-07 | 2012-10-03 | 钰创科技股份有限公司 | 数据感测装置与方法 |
CN103456352A (zh) * | 2012-06-04 | 2013-12-18 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
CN111128262B (zh) * | 2019-12-17 | 2021-02-23 | 海光信息技术股份有限公司 | 存储器电路、电路控制方法、集成电路器件及处理器 |
US11869578B2 (en) | 2020-03-30 | 2024-01-09 | Changxin Memory Technologies, Inc. | Memory bank and memory |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7545702B2 (en) | 2006-07-21 | 2009-06-09 | Freescale Semiconductor, Inc. | Memory pipelining in an integrated circuit memory device using shared word lines |
US7623404B2 (en) * | 2006-11-20 | 2009-11-24 | Freescale Semiconductor, Inc. | Memory device having concurrent write and read cycles and method thereof |
US20110149661A1 (en) * | 2009-12-18 | 2011-06-23 | Rajwani Iqbal R | Memory array having extended write operation |
US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
CN105097031A (zh) * | 2014-05-21 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 非易失性存储器的数据读取方法、电路及非易失性存储器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2239541B (en) | 1989-12-29 | 1994-05-18 | Intel Corp | Dual port static memory with one cycle read-modify-write operation |
US5031141A (en) * | 1990-04-06 | 1991-07-09 | Intel Corporation | Apparatus for generating self-timing for on-chip cache |
JPH0574167A (ja) | 1991-09-17 | 1993-03-26 | Nec Corp | 半導体記憶装置 |
JPH05121369A (ja) | 1991-10-24 | 1993-05-18 | Oki Electric Ind Co Ltd | 半導体装置のコンタクトホールエツチング方法 |
JPH07169276A (ja) * | 1993-12-13 | 1995-07-04 | Toshiba Corp | 同期型メモリ |
US5530677A (en) * | 1994-08-31 | 1996-06-25 | International Business Machines Corporation | Semiconductor memory system having a write control circuit responsive to a system clock and/or a test clock for enabling and disabling a read/write latch |
US5994780A (en) * | 1997-12-16 | 1999-11-30 | Advanced Micro Devices, Inc. | Semiconductor device with multiple contact sizes |
US6380087B1 (en) * | 2000-06-19 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | CMP process utilizing dummy plugs in damascene process |
-
2002
- 2002-07-02 US US10/190,372 patent/US6798712B2/en not_active Expired - Fee Related
-
2003
- 2003-06-25 TW TW092117214A patent/TWI310192B/zh not_active IP Right Cessation
- 2003-07-02 AU AU2003281431A patent/AU2003281431A1/en not_active Abandoned
- 2003-07-02 DE DE60316945T patent/DE60316945T2/de not_active Expired - Lifetime
- 2003-07-02 EP EP03742405A patent/EP1518244B1/en not_active Expired - Lifetime
- 2003-07-02 WO PCT/US2003/020872 patent/WO2004006261A2/en active IP Right Grant
- 2003-07-02 CN CNB038156946A patent/CN100476990C/zh not_active Expired - Fee Related
- 2003-07-02 KR KR1020047021648A patent/KR100984373B1/ko not_active IP Right Cessation
- 2003-07-02 JP JP2004519785A patent/JP4463680B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101719378B (zh) * | 2009-12-07 | 2012-10-03 | 钰创科技股份有限公司 | 数据感测装置与方法 |
CN102446550A (zh) * | 2010-09-30 | 2012-05-09 | 北京兆易创新科技有限公司 | 一种异步存储器跟踪计时的方法和装置 |
CN102446550B (zh) * | 2010-09-30 | 2014-08-13 | 北京兆易创新科技股份有限公司 | 一种异步存储器跟踪计时的方法和装置 |
CN103456352A (zh) * | 2012-06-04 | 2013-12-18 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
CN103456352B (zh) * | 2012-06-04 | 2017-08-22 | 爱思开海力士有限公司 | 半导体器件和电子设备 |
CN111128262B (zh) * | 2019-12-17 | 2021-02-23 | 海光信息技术股份有限公司 | 存储器电路、电路控制方法、集成电路器件及处理器 |
US11869578B2 (en) | 2020-03-30 | 2024-01-09 | Changxin Memory Technologies, Inc. | Memory bank and memory |
Also Published As
Publication number | Publication date |
---|---|
WO2004006261A2 (en) | 2004-01-15 |
WO2004006261A3 (en) | 2004-04-15 |
EP1518244A2 (en) | 2005-03-30 |
JP4463680B2 (ja) | 2010-05-19 |
EP1518244B1 (en) | 2007-10-17 |
JP2005532653A (ja) | 2005-10-27 |
DE60316945T2 (de) | 2008-08-07 |
CN100476990C (zh) | 2009-04-08 |
TW200401306A (en) | 2004-01-16 |
KR20050016699A (ko) | 2005-02-21 |
AU2003281431A8 (en) | 2004-01-23 |
AU2003281431A1 (en) | 2004-01-23 |
TWI310192B (en) | 2009-05-21 |
US6798712B2 (en) | 2004-09-28 |
KR100984373B1 (ko) | 2010-09-30 |
DE60316945D1 (de) | 2007-11-29 |
US20040004901A1 (en) | 2004-01-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES SEMICONDUCTORS CO., LTD Free format text: FORMER OWNER: ADVANCED MICRO DEVICES CORPORATION Effective date: 20100721 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA STATE, THE USA TO: GRAND CAYMAN ISLAND, BRITISH CAYMAN ISLANDS |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100721 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090408 Termination date: 20160702 |