CN1655356B - 集成电路器件及其制造方法 - Google Patents

集成电路器件及其制造方法 Download PDF

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Publication number
CN1655356B
CN1655356B CN200510007923.0A CN200510007923A CN1655356B CN 1655356 B CN1655356 B CN 1655356B CN 200510007923 A CN200510007923 A CN 200510007923A CN 1655356 B CN1655356 B CN 1655356B
Authority
CN
China
Prior art keywords
wiring
integrated circuit
monitoring element
layer
temperature monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200510007923.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN1655356A (zh
Inventor
川原尚由
村濑宽
大窪宏明
菊田邦子
中柴康隆
小田直树
佐佐木得人
伊藤信和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Renesas Electronics Corp
Original Assignee
NEC Corp
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Renesas Electronics Corp filed Critical NEC Corp
Publication of CN1655356A publication Critical patent/CN1655356A/zh
Application granted granted Critical
Publication of CN1655356B publication Critical patent/CN1655356B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200510007923.0A 2004-02-09 2005-02-05 集成电路器件及其制造方法 Expired - Fee Related CN1655356B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004032660 2004-02-09
JP2004-032660 2004-02-09
JP2004032660A JP4541717B2 (ja) 2004-02-09 2004-02-09 集積回路装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1655356A CN1655356A (zh) 2005-08-17
CN1655356B true CN1655356B (zh) 2011-12-14

Family

ID=34824214

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510007923.0A Expired - Fee Related CN1655356B (zh) 2004-02-09 2005-02-05 集成电路器件及其制造方法

Country Status (3)

Country Link
US (1) US7777288B2 (ja)
JP (1) JP4541717B2 (ja)
CN (1) CN1655356B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3810411B2 (ja) * 2004-01-23 2006-08-16 Ｎｅｃエレクトロニクス株式会社 集積回路装置
JP2006105811A (ja) * 2004-10-06 2006-04-20 Fuji Electric Device Technology Co Ltd 半導体光センサデバイス及び測距方法
WO2007091214A1 (en) * 2006-02-10 2007-08-16 Nxp B.V. Semiconductor device and method of manufacturing thereof
US7510323B2 (en) * 2006-03-14 2009-03-31 International Business Machines Corporation Multi-layered thermal sensor for integrated circuits and other layered structures

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA991756A (en) * 1974-04-19 1976-06-22 Richard I. Maran Semi-conductor thermal protection arrangement
JPH01199462A (ja) * 1988-02-04 1989-08-10 Seiko Epson Corp 半導体装置
JPH01302849A (ja) 1988-05-31 1989-12-06 Fujitsu Ltd 半導体集積回路装置
JPH0290646A (ja) * 1988-09-28 1990-03-30 Nec Corp 試験用半導体素子
JP3013628B2 (ja) * 1992-08-19 2000-02-28 日本電気株式会社 半導体装置
JP3284731B2 (ja) * 1994-02-25 2002-05-20 松下電器産業株式会社 配線評価装置およびその使用方法
JPH0883823A (ja) * 1994-09-12 1996-03-26 Sharp Corp リード接続方法及び接続装置
JPH08308321A (ja) * 1995-05-16 1996-11-26 Iseki & Co Ltd 施肥装置付苗植機
JPH09229778A (ja) 1996-02-26 1997-09-05 Hitachi Ltd Ｉｃ化温度センサ
JP3277827B2 (ja) * 1996-11-19 2002-04-22 三菱電機株式会社 抵抗素子
TW454330B (en) * 1999-05-26 2001-09-11 Matsushita Electronics Corp Semiconductor apparatus and its manufacturing method
WO2003046536A1 (en) * 2001-11-26 2003-06-05 Sony International (Europe) Gmbh The use of 1d semiconductor materials as chemical sensing materials, produced and operated close to room temperature
JP2003297994A (ja) * 2002-03-29 2003-10-17 Hitachi Ltd 半導体装置およびその製造方法
JP3869815B2 (ja) * 2003-03-31 2007-01-17 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
JP3810411B2 (ja) * 2004-01-23 2006-08-16 Ｎｅｃエレクトロニクス株式会社 集積回路装置
JP4620962B2 (ja) * 2004-03-30 2011-01-26 ルネサスエレクトロニクス株式会社 集積回路装置の製造方法及び酸化バナジウム膜の形成方法
JP4535367B2 (ja) * 2004-05-24 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开平10-150153A 1998.06.02
同上.

Also Published As

Publication number Publication date
US7777288B2 (en) 2010-08-17
CN1655356A (zh) 2005-08-17
JP2005223297A (ja) 2005-08-18
JP4541717B2 (ja) 2010-09-08
US20050173775A1 (en) 2005-08-11

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111214

Termination date: 20160205