CN1645580A - 半导体装置的制造方法及使用于其中的耐热性粘合带 - Google Patents
半导体装置的制造方法及使用于其中的耐热性粘合带 Download PDFInfo
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- CN1645580A CN1645580A CNA2004100819160A CN200410081916A CN1645580A CN 1645580 A CN1645580 A CN 1645580A CN A2004100819160 A CNA2004100819160 A CN A2004100819160A CN 200410081916 A CN200410081916 A CN 200410081916A CN 1645580 A CN1645580 A CN 1645580A
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- adhesive tape
- heat resistant
- semiconductor device
- resistant adhesive
- sealing
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Abstract
本发明提供一种半导体装置的制造方法,至少包括:在外部焊垫侧贴合了耐热性粘合带(20)的金属制引线框(10)的裸片焊垫(11c)上接合半导体芯片(15)的搭载工序、使用密封树脂(17)对半导体芯片一侧进行单侧密封的密封工序、将被密封的构造物(21)切割成单个的半导体装置(21a)的切割工序,其特征在于,上述耐热性粘合带(20)至少由基材层和含有脱模剂的粘合剂层构成。根据本发明可以提供使用耐热性粘合带可有效地防止密封工序中的树脂泄漏,且贴合的粘合带不易影响之后的工序的半导体装置的制造方法。
Description
技术领域
本发明涉及一种使用贴合了耐热性粘合带的金属制引线框的半导体装置的制造方法、及使用于其中的耐热性粘合带。
背景技术
近年来,在LSI的安装技术中,CSP(Chip on Size/Scale Package)技术备受瞩目。在该技术中,以QFN(Quad Flat Non-leadaed Package)为代表的引脚被引入于封装内部的形式的封装,是在小型化和高集成方面特别引人注目的封装形式之一。在这种QFN的制造方法中,近年来还特别引人注目的是,将多个QFN用芯片整齐地排列在引线框的封装图形区域的裸片焊垫上,在金属模的模穴内用密封树脂一齐密封后,通过切割而切分为单个的QFN构造物,从而大幅提高每个引线框面积上的生产率的制造方法。
在这种将多个半导体芯片一齐密封的QFN的制造方法中,被树脂密封时的模压金属模所夹紧的区域,只是比封装图形区域更向外侧扩展的、树脂密封区域的外侧。因此,在封装图形区域、特别是在其中央部分,无法用足够的压力将外部引线面压在模压金属模上,从而很难抑制密封树脂漏到外部引线侧的现象,容易发生QFN端子等被树脂覆盖的问题。
为此,对于如上所述的QFN的制造方法,被认为特别有效的是,在引线框的外部引线侧贴合粘合带,通过利用了该粘合带的自粘力(masking)的密封效果,防止树脂密封时树脂漏到外部引线侧的制造方法。
在这种制造方法中,当在引线框上搭载半导体芯片之后,或在实施了引线接合之后,进行耐热性粘合带的贴合,在操作方面实质上是比较困难的,耐热性粘合带最好在最初的阶段被贴在引线框的外部焊垫面上,之后,经半导体芯片的装配工序和引线接合工序,一直贴合到利用密封树脂的密封工序。作为这种方法,提出了使用具有厚度为10μm以下的粘合剂层的耐热性粘合带,在防止树脂泄漏的同时可实施引线接合等一系列工序的制造方法(参照特开2002-184801号公报)。
在上述制造方法中,可以在密封工序之后的任何阶段剥离耐热性粘合带。但是,就具有强大粘合力的粘合带而言,不仅撕脱非常困难,而且有时由于用于撕脱的应力,也有可能造成模压了的树脂的剥离或破损。因此,如果粘合性大到抑制密封树脂溢出所需的粘合力以上,则反而不理想。
发明内容
本发明的目的是提供一种半导体装置的制造方法,该方法中用耐热性粘合带可以很好地防止密封工序中的树脂泄漏,而且贴合的粘合带也不容易影响随后的工序。
另外,本发明的目的是提供一种用于上述半导体装置的制造方法的半导体装置制造用的粘合带。
本发明人等为了达到上述目的,对耐热性粘合带的物性、材料等进行了锐意研究,结果发现通过使用粘合剂成分中添加了脱模剂成分的耐热性粘合带,能够达成上述目的,从而完成了本发明。
即,本发明涉及一种半导体装置的制造方法,至少包括:在外部焊垫侧贴合了耐热性粘合带的金属制引线框的裸片焊垫上接合半导体芯片的搭载工序、使用密封树脂对半导体芯片一侧进行单侧密封的密封工序、将被密封的构造物切割成单个的半导体装置的切割工序,其特征在于,上述耐热性粘合带至少由基材层和含有脱模剂的粘合剂层构成。
在上述半导体装置的制造方法中所使用的耐热性粘合带,其在贴合于不锈钢板上的状态下,在200℃下加热1小时之后,以JIS Z0237为基准测定的粘合力优选在5.0N/19mm宽以下。测定在常温(23℃)下进行。
另外,本发明涉及一种半导体装置制造用耐热性粘合带,其用于至少包括下述工序的半导体装置的制造方法,所述工序为:在外部焊垫侧贴合了耐热性粘合带的金属制引线框的裸片焊垫上接合半导体芯片的搭载工序、使用密封树脂对半导体芯片一侧进行单侧密封的密封工序、将被密封的构造物切割成单个的半导体装置的切割工序,其特征在于,上述耐热性粘合带至少由基材层和含有脱模剂的粘合剂层构成。
本发明的耐热性粘合带能够防止密封工序中的树脂泄漏,而且粘合剂层中含有脱模剂,所以能够容易地进行密封工序后的撕脱,可抑制由撕脱应力造成的模压树脂的剥离或损坏。
就上述耐热性粘合带的粘合力而言,在将粘合带贴合于不锈钢板上的状态下,在200℃下加热1小时之后,以JIS Z0237为基准而测定的粘合力在5.0N/19mm宽以下时,能够确实可靠地得到防止密封工序中的树脂泄漏所需的粘合力,同时密封工序后的撕脱变得容易,也不会产生密封树脂的损坏。上述粘合力更优选在2.0N/19mm宽以下。当粘合力在5.0N/19mm以上时,粘合剂层和引线框或密封树脂的粘合力很强,所以当强行撕脱粘合剂层时,粘合剂层的表层会残留在完成的封装上,难以得到良好的封装。其中,为了有效地防止密封工序中的树脂泄漏,上述粘合力优选在0.05N/19mm宽以上,进一步优选0.1N/19mm宽以上。
对于本发明的其他目的、特征以及优点,可以根据如下所述的描述而充分了解。另外,通过参照附图的下述说明可以明确本发明的优点。
附图说明
图1是表示一例本发明的半导体装置的制造方法的工序图。
图2是表示一例本发明中的引线框的图,2(a)是主视图,2(b)是表示主要部分放大图,2(c)是表示树脂密封后的状态的仰视图。
图3是表示一例本发明中的树脂密封工序的纵向截面图。
具体实施方式
下面,参照附图说明本发明的实施方式。图1是表示一例本发明的半导体装置的制造方法的工序图。
如图1所示,本发明的半导体装置的制造方法至少包括半导体芯片15的搭载工序、利用密封树脂17的密封工序、切割被密封的构造物21的切割工序。
如图1(a)~1(b)所示,搭载工序是,在裸片焊垫11c上接合半导体芯片15的工序,而所述的裸片焊垫11c是在外部焊垫侧(图的下侧)上贴合有耐热性粘合带20的金属制引线框10的裸片焊垫。
引线框10是指如以铜等金属为原材料并刻上QFN的端子图形的器件,其电接点部分,有时也由银、镍、钯、金等原材料所被覆(镀覆)。引线框10的厚度通常为100~300μm。还有,通过部分蚀刻等进行薄加工的部分并不限于此。
引线框10优选为整齐地排列有各QFN配置图形的结构,以便在之后的切割工序中容易切割。例如,如图2所示,在引线框10上纵横排列成矩阵状的形状等,被称为矩阵QFN或MAP-QFN等,是最优选的引线框形状之一。尤其是近年来,从生产率的观点出发,在1片引线框中排列的封装数量增多,所以不仅每个这些封装细密化,还为了用一个密封部分将多个封装密封,这些排列数量也大大扩大。
如图2(a)~2(b)所示,在引线框10的封装图形区域11上,整齐地排列有在相邻的多个开口11a上排列了多个端子部11b的QFN的基板设计。在一般的QFN的情况下,各基板设计(用图2(a)的格子划分的区域)是由排列在开口11a周围的下侧具有外部引线面的端子部11b、和配置在开口11a中央的裸片焊垫11c、将裸片焊垫11c支撑在开口11a的4个角上的裸片撑杆11d构成。
耐热性粘合带20至少粘合在比封装图形区域更靠外侧的位置上,优选贴合在包括被树脂密封的树脂密封区域外侧的整个周围。引线框10通常在端边附近具有用于树脂密封时的定位的导向销用孔13,优选将其贴合在不堵塞该孔的区域。另外,因为树脂密封区域在引线框10的长度方向配置有多个,所以优选以连接这些多个区域的方式连续贴合粘合带20。
在如上所述的引线框10上搭载半导体芯片15、即作为半导体集成电路部分的硅晶圆芯片。为了在引线框10上固定该半导体芯片15,设置有被称为裸片焊垫11c的固定区域,关于接合(固定)到该裸片焊垫11c上的方法,可以采用使用导电性膏19,或者使用胶粘带、胶粘剂等的各种方法。当使用导电性膏或热固化性胶粘剂等进行接合时,通常在150~200℃左右的温度下实施加热固化处理30分钟~90分钟左右。
通常接下来进行的是用接合引线将上述引线框的端子部顶端和上述半导体芯片上的电极焊垫进行电连接的接线工序。如图1(c)所示,接线工序是用接合引线16将上述引线框10的端子部11b(内引线)的顶端和半导体芯片15上的电极焊垫15a进行电连接的接线工序。作为接合引线16,例如可以使用金线或铝线等。一般,在加热至120~250℃的状态下,通过并用由超声波形成的振动能和由外部加压造成的压接能而进行接线。此时,通过对贴合在引线框10上的耐热性粘合带20面进行真空吸引,能够确实地固定在加热块上。还有,在上述中说明的是,以面朝上的状态安装半导体芯片后进行接线工序的情况,当以面朝下的状态安装了半导体芯片的情况下,可以适当实施回流工序。
如图1(d)所示,密封工序是指用密封树脂17单面密封半导体芯片侧的工序。密封工序是为了保护搭载在引线框10上的半导体芯片15和接合引线16而进行的,尤其典型的是使用以环氧类树脂为代表的密封树脂17而在金属模具中成型的工序。此时,如图3所示,通常使用由具有多个模穴的上金属模18a和下金属模18b构成的金属模18,且使用多个密封树脂17同时进行密封工序。具体地说,例如树脂密封时的加热温度为170~180℃,在该温度下固化数分钟之后,进一步进行数小时的出模固化(postmold cure)。还有,优选在出模固化之前剥离粘合片20。
如图1(e)所示,切割工序是指将被密封的构造物21切割成单个的半导体装置21a的工序。一般可举例为,使用切粒机等旋转切割刀将密封树脂17的切割部17a切开的切割工序。
本发明的耐热性粘合带20至少由基材层和含有脱模剂的粘合剂层构成。
耐热性粘合带20预先贴合在引线框10上,所以在上述的制造工序中被加热。例如,当对半导体芯片15进行芯片焊接时,一般在150~200℃左右的温度下进行30分钟~90分钟左右的加热固化。当进行引线接合时,例如可以在120~250℃左右的温度下进行,但是当由一个引线框制造许多半导体装置时,也要考虑到作为对所有半导体装置的接合结束的时间,每个引线框需要1小时以上。而且,当树脂密封时,作为充分熔化树脂的温度,有必要加到175℃左右。因此,耐热性粘合带20的基材层可以使用相对于上述的加热条件而满足耐热性的原材料。
作为基材层的材料,可以列举出如聚对苯二甲酸乙二醇酯(PET)薄膜、聚萘二甲酸乙二醇酯(PEN)薄膜、聚磺酸乙二醇酯(PES)薄膜、聚醚酰亚胺(PEI)薄膜、聚砜(PSF)薄膜、聚苯硫醚(PPS)薄膜、聚醚醚酮(PEEK)薄膜、聚芳酯(PAR)薄膜、芳族聚酰胺薄膜、液晶聚合物(LCP)等树脂材料。
为了防止弯曲或裂开,耐热性粘合带20的基材层的厚度至少为5μm以上,鉴于其适宜的处理性,优选10~100μm。
形成粘合剂层的粘合剂只要是由具有耐热性的粘合剂形成的粘合剂,就没有特别限制。例如,可举出如橡胶类粘合剂、丙烯酸类粘合剂、硅酮类粘合剂等。
作为作为这种粘合剂成分之一所举例的丙烯酸类粘合剂,可以使用以赋予粘合性的低Tg单体为主要单体,由赋予粘接性和粘合力的高Tg的共聚用单体、用于交联或粘接性改良的含官能团单体等的单乙烯性不饱和单体等构成的丙烯酸类聚合物。作为主要单体,可举例为(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异戊酯、(甲基)丙烯酸正己酯、(甲基)、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十二酯等(甲基)丙烯酸烷基酯。
作为共聚用单体,可以举例为醋酸乙烯酯、丙酸乙烯酯、乙烯醚、苯乙烯、丙烯腈、甲基丙烯腈等含乙烯基化合物。作为含官能团单体,可举例为丙烯酸、甲基丙烯酸、丁烯酸、马来酸、富马酸、衣康酸等含羧基单体,(甲基)丙烯酸-2-羟乙基酯、(甲基)丙烯酸-2-羟丙基酯、(甲基)丙烯酸-2-羟丁基酯、N-羟甲基丙烯酰胺、烯丙醇等含羟基单体,(甲基)丙烯酸二甲氨基乙酯、(甲基)丙烯酸二乙氨基乙酯、(甲基)丙烯酸二甲氨基丙酯等含叔胺基单体,丙烯酰胺、甲基丙烯酰胺等含酰胺基单体,N-甲基(甲基)丙烯酰胺、N-乙基(甲基)丙烯酰胺、N-甲氧基甲基(甲基)丙烯酰胺、N-乙氧基甲基(甲基)丙烯酰胺、N-叔丁基丙烯酰胺、N-辛基丙烯酰胺等含N-取代酰胺基的单体,甲基丙烯酸缩水甘油酯等含环氧基单体。
在这些丙烯酸类粘合剂中,可以含有适宜的交联剂、可举例为异氰酸酯类交联剂、环氧交联剂、氮杂环丙烷类化合物、螯合物类交联剂等。对交联剂的使用量没有特别限制,当整个粘合剂层过分柔软时,即使在引线接合时要连接接合引线,粘合剂层的弹力会阻碍用粘合带贴合引线框充分进行固定,结果会缓和由加压带来的压接能,有可能出现接合不良。关于交联剂的使用量,例如相对于上述丙烯酸类聚合物100重量份,优选0.1~15重量份,更优选1.0~10重量份,因为这种丙烯酸类粘合剂可以容易地获得适当的粘合力和储藏弹性模数,所以在本发明中是最优选的粘合剂。
上述粘合剂层中含有脱模剂。作为脱模剂,只要是一般能发挥脱模效果的脱模剂,就没有特别限制。可以列举出如用于剥离衬垫的含长链烷基聚合物、硅酮类聚合物、全氟类聚合物、氟化聚烯烃、以及作为塑料材料的脱模剂而公知的聚乙烯类蜡、巴西棕榈蜡、褐煤酸、硬脂酸等。其中,优选聚乙烯类蜡,特别优选氧化聚乙烯蜡。另外,作为其他脱模剂,可举例为增塑剂等。作为增塑剂只要是通常情况下能使粘合剂相对于粘附物的粘接力降低,没有特别限制。可举例为偏苯三酸酯、苯均四酸酯、酞酸酯、己二酸酯等增塑剂。
其中,对脱模剂的添加量没有特别限制,可以根据粘附物适当确定添加量以得到脱模效果。另一方面,应控制添加量不要过多,以防显著损害粘合剂层的粘合功能。例如相对于上述丙烯酸类聚合物100重量份,通常以0.1~5重量份、优选0.1~3重量份、进一步优选0.1~1重量份左右的添加量为基准,按照剥离力进行调节。这一范围尤其适合于氧化聚乙烯类脱模剂的情况。另外,如果添加增塑剂,则通常以5~50重量份、优选10~50重量份、进一步优选20~40重量份左右的添加量为基准,按照剥离力进行调节。
在本发明中,这些脱模剂能够单独使用,或能够使用多种材料。而且,必要时,作为其他添加剂,能够添加如紫外线吸收材料、增粘剂、软化剂(增塑剂)、填充剂、抗老化剂、增粘剂、颜料、染料、有机硅烷偶合剂等各种添加剂。
另外,构成粘合带20的粘合剂层从其粘合功能方面考虑,优选为具有某种程度弹性的层。另一方面,当整个粘合剂层过分柔软时,即使在引线接合时要连接接合引线,粘合剂层的弹力会阻碍用粘合带贴合引线框充分进行固定,结果会缓和由加压带来的压接能,有可能出现接合不良。
为了确保不出现这种接合不良、且确保可防止密封工序中的树脂泄漏的充分的粘合力这两种互为相反的性能,使用粘弹性分光计以频率为1Hz、升温速度为5℃/分进行测量的粘合剂层在200℃时的剪切储藏弹性模数优选在1.0×104Pa以上,更优选1.0×105Pa以上,这有可能将作为粘合剂层整体的缓冲性控制在较小的范围内,得到引线接合强度。其中,当上述储藏弹性模数过大时,粘合带对引线框的高低差异随动性有降低的趋势,密封树脂有可能在模压时出现泄漏,所以优选上述储藏弹性模数在1×108Pa以下。
对本发明的粘合剂层厚度没有特别限制,但由于在引线接合时要将作为粘合剂层整体的缓冲性控制在较小的范围内,不优选其厚度过厚,另一方面,即使在密封工序中,若要得到充分的密封性,需要具有一定程度的厚度。能够使这两种相反的特性达到更好平衡的粘合剂层厚度优选为1~50μm,更优选5~25μm。
下面,说明具体表示本发明的结构和效果的实施例等。
实施例1
把25μm厚的聚酰亚胺薄膜(东丽杜邦制:Capton100H)作为基材使用。另一方面,使用相对于丙烯酸丁酯100重量份将丙烯酸5重量份作为构成单体的丙烯酸类共聚物,并相对于该聚合物100重量份,添加环氧类交联剂(三菱气体化学制,Tetrad-C)3重量份、以及作为脱模剂的氧化聚乙烯蜡(Clariant Japan制,Licowax PED 521,酸值15~19mgKOH/g)0.2重量份,调制添加了添加剂的丙烯酸类粘合剂。使用该丙烯酸类粘合剂,制作设置有厚10μm的粘合剂层的耐热性粘合带。使用流测科学公司制的ARES,在频率为1Hz、升温速度为5℃/分钟、样品尺寸为φ7.9mm的利用平行板的剪切储藏弹性模式下,对这种丙烯酸类粘合剂进行测定,结果200℃下的储藏弹性模数为9.0×105Pa。另外,将该粘合带贴合在不锈钢板上的状态下,在200℃下加热1小时之后,以JIS Z0237为基准测定粘合力,结果为0.2N/19mm宽。
将该耐热性粘合带贴合在铜制的引线框的外部焊垫侧,该引线框上以4个×4个的形式排列有实施了Ni/Pd以及闪蒸Au镀覆的一边16Pin类型的QFN。使用环氧酚类银膏将半导体芯片粘接在该引线框的裸片焊垫部分,在180℃下固化1小时左右以进行固定。
接着,将引线框以从耐热性粘合带侧进行真空吸引的形式固定在加热至200℃的加热块上,进而用窗式接线板(clamper)按压引线框的周围部分进行固定。使用115KHz的引线接合器(新川制,UTC-300BI super),并用φ25μm的金线(田中贵金属制GMG-25)在下述条件下对它们进行引线接合。其中,完成所有的接合需要约1小时。
初始接合加压:80g
初始接合超声波强度:550mW
初始接合施加时间:10msec
二次接合加压:80g
二次接合超声波强度:500mW
二次接合施加时间:8msec
接着,利用环氧类密封树脂(日东电工制,HC-300B6)使用塑模机(TOWA制,Model-Y-serise),在175℃下以预热设置为3秒、注塑时间12秒、固化时间90秒条件,对它们进行塑模,之后,剥离耐热性胶带。还有,进一步在175℃下进行出模固化3小时左右而使树脂充分固化之后,用切割机切割,得到各个QFN类型的半导体装置。
由此得到的QFN能够容易地剥离粘合带,且没有糊料残留。另外,能够得到良好的封装,该封装中控制密封树脂泄漏的掩蔽性也良好,且在完成的封装上没有特别明显的粘附污染物等。
实施例2
在实施例1中,当进行丙烯酸类粘合剂的调制时,作为脱模剂(增塑剂)添加偏苯三酸酯(大日本油墨制,W-700)20重量份,除此之外,调制组成与实施例1相同的丙烯酸类粘合剂。另外,使用该丙烯酸类粘合剂,制成与实施例1相同的耐热性粘合带,另外,与实施例1相同地制造QFN。由此得到的QFN能够容易地剥离粘合带,且没有糊料残留。另外,能够得到良好的封装,该封装中控制密封树脂泄漏的掩蔽性也良好,且在完成的封装没有特别明显的粘附污染物等。还有,进行和实施例1相同的测定时,丙烯酸类粘合剂的储藏弹性模数为7.0×105Pa,粘合带的粘合力为0.5N×19mm宽。
比较例1
在没有贴合上述耐热性粘合带的引线框单体上接合半导体芯片,用金属模夹持,并在与实施例1相同的条件下进行树脂密封,结果发生了树脂泄漏。
比较例2
在实施例1中,当进行丙烯酸类粘合剂的调制时,除了没有添加脱模剂之外,调制组成与实施例1相同的丙烯酸类粘合剂。另外,使用该丙烯酸类粘合剂,制成与实施例1相同的耐热性粘合带,另外,与实施例1相同地制造QFN。由此得到的QFN虽然控制密封树脂泄漏的掩蔽性能良好,但因粘合带的粘合力显著增加,强行撕脱时,粘合剂的表层会残留在完成的封装上。还有,进行和实施例1相同的测定时,丙烯酸类粘合剂的储藏弹性模数为9.0×105Pa,粘合带的粘合力为7.5N×19mm宽。
在发明的详细说明项目中举出的具体实施方式或实施例终究是为了了解本发明的技术内容而写入的,不能仅限于这种具体例而进行狭义解释,可以在本发明的宗旨的范围内进行更改并实施。
Claims (4)
1、一种半导体装置的制造方法,至少包括:在外部焊垫侧贴合了耐热性粘合带的金属制引线框的裸片焊垫上接合半导体芯片的搭载工序、使用密封树脂对半导体芯片一侧进行单侧密封的密封工序、将被密封的构造物切割成单个的半导体装置的切割工序,其特征在于,所述耐热性粘合带至少由基材层和含有脱模剂的粘合剂层构成。
2、根据权利要求1所述的半导体装置的制造方法,其特征在于,所述耐热性粘合带在贴合于不锈钢板上的状态下在200℃加热1小时之后以JIS Z0237为基准测定的粘合力在5.0N/19mm宽以下。
3、一种半导体装置制造用耐热性粘合带,用于至少包括:在外部焊垫侧贴合了耐热性粘合带的金属制引线框的裸片焊垫上接合半导体芯片的搭载工序、使用密封树脂对半导体芯片一侧进行单侧密封的密封工序、将被密封的构造物切割成单个的半导体装置的切割工序的半导体装置的制造方法,其特征在于,所述耐热性粘合带至少由基材层和含有脱模剂的粘合剂层构成。
4、根据权利要求3所述的半导体装置制造用耐热性粘合带,其特征在于,所述耐热性粘合带在贴合于不锈钢板上的状态下在200℃加热1小时之后以JIS Z0237为基准测定的粘合力在5.0N/19mm宽以下。
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CN101785093B (zh) * | 2007-08-28 | 2013-03-13 | 美光科技公司 | 半导体组合件及制造所述组合件的方法 |
CN103305138A (zh) * | 2012-03-08 | 2013-09-18 | 日东电工株式会社 | 树脂密封用压敏粘合带和树脂密封型半导体器件的生产方法 |
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CN103305138A (zh) * | 2012-03-08 | 2013-09-18 | 日东电工株式会社 | 树脂密封用压敏粘合带和树脂密封型半导体器件的生产方法 |
CN111668122A (zh) * | 2019-03-08 | 2020-09-15 | 矽磐微电子(重庆)有限公司 | 半导体封装方法 |
CN111668122B (zh) * | 2019-03-08 | 2022-03-25 | 矽磐微电子(重庆)有限公司 | 半导体封装方法 |
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KR20050076771A (ko) | 2005-07-27 |
SG113568A1 (en) | 2005-08-29 |
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JP4566568B2 (ja) | 2010-10-20 |
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