CN101186792B - 半导体装置制造用耐热性胶粘带 - Google Patents

半导体装置制造用耐热性胶粘带 Download PDF

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Publication number
CN101186792B
CN101186792B CN2007101940118A CN200710194011A CN101186792B CN 101186792 B CN101186792 B CN 101186792B CN 2007101940118 A CN2007101940118 A CN 2007101940118A CN 200710194011 A CN200710194011 A CN 200710194011A CN 101186792 B CN101186792 B CN 101186792B
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adhesive tape
heat
resistant adhesive
semiconductor device
tackiness agent
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CN101186792A (zh
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天野康弘
近藤广行
桶结卓司
寺田好夫
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Nitto Denko Corp
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Nitto Denko Corp
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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Abstract

本发明提供一种可以制造半导体装置的耐热性胶粘带，其通过耐热性胶粘带很好地防止密封工序中的树脂泄漏，并且粘贴的胶带不易在一系列的工序或胶带的剥离工序中带来障碍。该半导体装置制造用耐热性胶粘带是在半导体装置的制造方法中使用的耐热性胶粘带，所述半导体装置的制造方法至少具有如下工序：在金属制引线框的管芯焊盘上键合半导体芯片的载置工序，所述金属制引线框在外焊盘一侧贴合了耐热性胶粘带、用密封树脂将半导体芯片侧单面密封的密封工序、和将密封的结构物切断成单个的半导体装置的切断工序，其中上述耐热性胶粘带具有基材层、和包含亲水性层状硅酸盐和胶粘剂的胶粘层。

Description

半导体装置制造用耐热性胶粘带
技术领域
本发明涉及用于制造半导体装置的耐热性胶粘带。
背景技术
近年，在LSI的组装技术中，CSP(芯片尺寸级封装)技术受到瞩目。该技术中，对于以QFN(无引线四方扁平封装)为代表的引线端子引入到封装内部的形态的封装，是在小型化和高集成方面特别受瞩目的封装形态之一。这样的QFN的制造方法中，近年来，下述制造方法特别受瞩目，即，将多个QFN用芯片整齐地排列在引线框的封装图案区域的管芯焊盘上，在模具的模腔内用密封树脂一并密封后，通过切断切分成单个的QFN结构物，从而飞跃性地提高引线框单位面积的生产性。
在这样的将多个半导体芯片一并密封的QFN制造方法中，在树脂密封时由模塑模具锁住的区域只是扩展到封装图案区域更外侧的树脂密封区域的外侧。因此在封装图案区域，特别是其中央部分，不能以充分的压力将外引线面压在模塑模具上，抑制密封树脂漏出到外引线一侧是非常困难的，并容易产生QFN的端子等被树脂覆盖的问题。
因此，对于如上所述的QFN的制造方法，在引线框的外引线一侧贴附耐热性胶粘带，并通过利用了该耐热性胶粘带的自胶粘力(遮挡)的密封效果而在树脂密封时防止树脂向外引线一侧泄漏的制造方法被认为是特别有效的。
在这样的制造方法中，在引线框上载置半导体芯片后或者在实施了引线键合之后进行耐热性胶粘带的贴合，在操作方面实质上是困难的，因此希望耐热性胶粘带在最初阶段贴合在引线框的外焊盘面上，然后经过半导体芯片的载置工序和引线键合的工序，一直贴合到采用密封树脂的密封工序。因此，作为耐热性胶粘带，不仅只是防止密封树脂的漏出，而且要求耐受半导体芯片的载置工序的高度的耐热性、以及不会对引线键合工序中的纤细的操作性带来障碍等满足这些所有工序的特性。作为满足该要求的胶带，开发了耐热性胶粘带(专利文献1)。
但是，在进行引线键合、树脂密封等工序的高温时，胶粘剂难以发挥以往的胶粘特性，对被粘附物的粘附力显著降低。因此，由于引线键合时的冲击等，胶粘带从被粘附物上剥离，结果在树脂密封时有时会产生密封树脂泄漏到引线框/胶粘带之间等问题。
专利文献1：特开2004-14930号公报
发明内容
本发明是鉴于上述问题进行的，其目的在于提供一种可以制造半导体装置的耐热性胶粘带，该胶粘带在近年的精密QFN中，即使是对于同时密封特别多的封装的大型矩阵图案类型，也通过耐热性胶粘带很好地防止在密封工序中的树脂泄漏，并且粘贴的胶带不易在一系列的工序或胶带的剥离工序中带来障碍。
本申请的发明人等为了解决上述以往的问题，对耐热性胶粘带的物性、材料、厚度等进行了深入研究。结果发现，通过使用由基材层、和包含亲水性层状硅酸盐和胶粘剂的胶粘层构成的耐热性胶粘带，可以实现上述目的，以至完成了本发明。
即，本发明涉及一种半导体装置制造用耐热性胶粘带，其是在半导体装置的制造方法中使用的耐热性胶粘带，所述半导体装置的制造方法至少具有如下工序：在金属制引线框的管芯焊盘上键合半导体芯片的载置工序，所述金属制引线框在外焊盘一侧贴合了耐热性胶粘带；用密封树脂将半导体芯片侧单面密封的密封工序、和将密封的结构物切断成单个的半导体装置的切断工序，其中上述耐热性胶粘带具有基材层、和包含亲水性层状硅酸盐和胶粘剂的胶粘层。
在上述半导体装置的制造方法中使用的耐热性胶粘带优选在175℃气氛下测定的粘附力为0.2N/19mm宽以上。
在上述半导体装置的制造方法中使用的耐热性胶粘带优选以粘附在不锈钢板上的状态在200℃下加热1小时后，基于JIS Z0237测定的粘附力为5.0N/19mm宽以下。测定在常温(23℃)进行。
发明效果
本发明的耐热性胶粘带可以很好地防止在密封工序中的树脂泄漏，通过使用亲水性层状硅酸盐，提高胶粘剂的凝聚力，并可以保持在半导体制造工序中的温度气氛下对被粘附物的粘附力。另外，即使在200℃左右的高温加热处理后，也可以从被粘附物上剥离而不会留下残胶。此外，通过使用在高温加热处理时也不易分解的含有共聚物乳液的水分散型丙烯酸类胶粘剂，可以减少气体的发生量。气体发生量的降低可以抑制半导体芯片的污染，并可以降低剥离力，因此剥离性优异，并且不会在被粘附物上留下残胶。可以制造通过耐热性胶粘带很好地防止在密封工序中的树脂泄漏，并且粘贴的耐热性胶粘带不易在一系列的工序或胶带的剥离工序中带来障碍的半导体装置。
附图说明
图1是示出本发明的半导体装置的制造方法的一例的工序图。
图2是示出本发明的引线框的一例的图，(a)是主视图、(b)是主要部分放大图、(c)是示出树脂密封后的状态的纵向剖面图。
图3是示出本发明的树脂密封工序的一例的纵向剖面图。
符号说明
10  引线框
11  封装图案区域
11a 开口
11b 端子部
11c 管芯焊盘
11d damber
12  模腔
13  导销用孔
15  半导体芯片
15a 电极焊盘
16  键合用导线
17  密封树脂
17a 切断部
18  模具
18a 上模具
18b 下模具
19  导电糊
20  耐热性胶粘带
20a 基材层
20b 胶粘层
21  被密封的结构物
21a 半导体装置
具体实施方式
本发明的耐热性胶粘带包含基材层、和包含亲水性层状硅酸盐和胶粘剂的胶粘层。作为基材层的材料，只要是成为胶粘层的基部的材料即可，没有特别限定，例如可列举聚酰亚胺(PI)膜、聚对苯二甲酸乙二醇酯(PET)膜、聚萘二甲酸乙二醇酯(PEN)膜、聚醚砜(PES)膜、聚醚酰亚胺(PEI)膜、聚砜(PSF)膜、聚苯硫醚(PPS)膜、聚醚醚酮(PEEK)膜、聚芳酯(PAR)膜、芳族聚酰胺膜、液晶聚合物(LCP)等树脂材料。
为了防止折断或裂开，基材膜的厚度优选为5μm以上，鉴于适当的操作性，更优选为10-100μm。
本发明的胶粘层的特征在于，含有亲水性层状硅酸盐和胶粘剂。
上述胶粘层含有亲水性层状硅酸盐。所谓亲水性层状硅酸盐，是指主要通过具有二维结构的粘土层重叠而形成结晶结构的粘土矿物。亲水性层状硅酸盐不仅具有通过加入到溶剂中而膨润，从而扩大各层间距离的特性，还具有可以在层间以保持该结构的状态引入离子或分子的特性。本发明中使用的亲水性层状硅酸盐，只要是可以在水分散型丙烯酸类胶粘剂中分散的亲水性层状硅酸盐即可，没有特别限定，例如可列举蒙脱石、皂石、锌蒙脱石、硅镁石(stevensite)、锂蒙脱石、珍珠云母、滑石、金云母、纤蛇纹石、绿泥石、蛭石、高岭石、白云母、缘脆云母(xanthophyllite)、地开石、珍珠陶土、叶蜡石、绿土、贝得石、囊脱石、tetrasilicic mica、钠带云母、叶蛇纹石、埃洛石等。上述亲水性层状硅酸盐可以是天然物或合成物中的任一种，可以使用它们的1种或2种以上。特别是，优选使用平均长度优选为0.01-100μm，更优选为0.05-10μm，长径比优选为20-500，更优选为50-200的。
上述亲水性层状硅酸盐的含量没有特别限定，可根据被粘附物适当决定添加量以获得耐热性。例如，在本发明的耐热性胶粘带中，相对于100重量份胶粘剂，通常优选配合40重量份以下，更优选配合30重量份以下，由此可以表现出耐热性。如果比40重量份多，则担心使胶粘剂的胶粘特性丧失。另外，在不到1重量份时，由于难以表现出耐热性，因此优选为1重量份以上，更优选为10重量份以上。因此，希望调整添加量以满足目标剥离力。这里所说的配合亲水性层状硅酸盐的胶粘剂，是指例如仅由胶粘剂构成的。
本发明的胶粘层中使用的胶粘剂只要具有耐热性即可，没有特别限制，例如可列举丙烯酸类胶粘剂、橡胶类胶粘剂、聚硅氧烷类胶粘剂等。另外，作为丙烯酸类胶粘剂，优选使用水分散型丙烯酸类胶粘剂等。
本发明中使用的水分散型丙烯酸类胶粘剂包括以烷基的碳原子数为4-12的(甲基)丙烯酸烷基酯为主成分，并且与包括含羧基单体的单体通过在乳化剂存在下进行乳液聚合而得到的共聚物乳液。
烷基的碳原子数为4-12的(甲基)丙烯酸烷基酯是丙烯酸或甲基丙烯酸和碳原子数为4-12的醇的酯，具体地，可列举(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸环戊酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸异冰片酯等，可以使用这些当中的1种或2种以上。
在构成作为水分散型丙烯酸类胶粘剂成分的共聚物乳液的单体中，除了烷基的碳原子数为4-12的(甲基)丙烯酸烷基酯以外，为了实现提高对被粘附物的粘附力、导入用来将得到的共聚物乳液进行后交联的交联点、提高胶粘剂的凝聚力、通过中和而提高机械稳定性中的至少一种目的，含有作为能够与上述(甲基)丙烯酸烷基酯共聚的含有官能团的单体的含羧基单体。作为含羧基单体，可列举丙烯酸、甲基丙烯酸、衣康酸、马来酸、巴豆酸等。可以使用这些当中的1种或2种以上。
另外，为了实现提高对被粘附物的粘附力、导入用来将得到的共聚物乳液进行后交联的交联点、提高胶粘剂的凝聚力中的至少一种目的，还可以使用能够与上述成分共聚的含有羧基以外的其它官能团的单体或改性用单体。
作为上述含有羧基以外的其它官能团的单体，可列举(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸2-羟丁酯等含羟基单体；(甲基)丙烯酰胺、N，N-二甲基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-甲氧甲基(甲基)丙烯酰胺、N-丁氧甲基(甲基)丙烯酰胺等含酰胺基单体；(甲基)丙烯酸2-(N，N-二甲基氨基)乙酯等含氨基单体；(甲基)丙烯酸缩水甘油酯等含缩水甘油基单体；(甲基)丙烯酸丙基三甲氧基硅烷、(甲基)丙烯酸丙基二甲氧基硅烷、(甲基)丙烯酸丙基三乙氧基硅烷等含有烷氧基甲硅烷基的单体；(甲基)丙烯腈、N-(甲基)丙烯酰吗啉、N-乙烯基-2-吡咯烷酮等。这些含有官能团的单体可以单独使用1种，或者也可以使用2种以上。
作为上述改性用单体，可列举(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸异丙酯等烷基的碳原子数为1-3的(甲基)丙烯酸烷基酯；(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸硬脂酯等烷基的碳原子数为13-18的(甲基)丙烯酸烷基酯；醋酸乙烯、苯乙烯、乙烯基甲苯等。另外，可列举新戊二醇二(甲基)丙烯酸酯、己二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等具有二个以上聚合性官能团的物质。这些改性用单体可以单独使用1种，或者也可以使用2种以上。
当烷基的碳原子数为4-12的(甲基)丙烯酸烷基酯和含羧基单体满足上述目的，并且将使用的含羧基单体、含有羧基以外的官能团的单体和改性用单体的全部所含单体以总量计，相对于100重量份例如只含有亲水性层状硅酸盐的胶粘剂添加这些单体时，优选以50重量份以下、更优选为20重量份以下、进一步优选为0.5-10重量份的比例使用。
作为将水分散型丙烯酸类胶粘剂进行乳液聚合时使用的乳化剂，可以没有特别限制地使用在乳液聚合中使用的阴离子类乳化剂或非离子类乳化剂。例如可列举十二烷基硫酸钠、十二烷基硫酸铵、十二烷基苯磺酸钠、聚氧乙烯烷基硫酸钠、聚氧乙烯烷基醚硫酸钠、聚氧乙烯烷基苯基醚硫酸钠等阴离子类乳化剂；聚氧乙烯烷基醚、聚氧乙烯烷基苯基醚等非离子类乳化剂等。相对于100重量份例如只含有亲水性层状硅酸盐的胶粘剂添加时，乳化剂的含量优选为0.2-10重量份，更优选为0.5-5重量份。
本发明中使用的水分散型丙烯酸类胶粘剂以上述共聚物乳液为主剂成分，根据需要还可以在其中含有交联剂。例如可列举异氰酸酯类交联剂、环氧类交联剂、hydrazyl类化合物等。交联剂的含量虽然没有特别限制，但作为胶粘层总体过于柔软时，在引线键合时即使要将键合用导线连接，但由于胶粘剂的弹性力，贴合胶粘带并将引线框充分固定受到阻碍，结果缓和了由于加压而产生的压合能，从而有可能产生键合不良。相对于100重量份例如含有亲水性层状硅酸盐和上述共聚物乳液的水分散型丙烯酸类胶粘剂，交联剂的含量优选添加0.1-15重量份，更优选添加1.0-10重量份。这样的含有共聚物乳液的水分散型丙烯酸类胶粘剂由于容易获得合适的粘附力或剪切储能模量，因此在本发明中是最优选的胶粘剂。另外，本发明的含有共聚物乳液的水分散型丙烯酸类胶粘剂即使在高温下也不易分解，因此可以抑制产生气体量，并可以防止半导体芯片的污染或损伤。
另外，构成耐热性胶粘带的胶粘剂，从其胶粘功能方面看，优选具有某种程度的弹性。另一方面，作为胶粘层总体过于柔软时，在引线键合时即使要将键合用导线连接，但由于胶粘剂的弹性力，贴合耐热性胶粘带并将引线框充分固定受到阻碍，结果缓和了由于加压而产生的压合能，从而产生键合不良。
譬如为了确保可以说是相反的性能，即，不引起这样的键合不良，并且确保在密封工序中可以防止树脂泄漏的充分的粘附力，通过粘弹性分光光度计在频率1Hz、升温速度5℃/分下测定的胶粘剂在200℃下的剪切储能模量优选为1.0×104Pa以上，更优选为1.0×105Pa以上，因为可以使作为胶粘层总体的缓冲性停留在很小，从而获得引线键合强度，故优选。另外，如果上述剪切储能模量过大，则耐热性胶粘带对引线框的高低阶差的追随性有降低的倾向，在模塑时有密封树脂产生渗漏的危险，因此，上述剪切储能模量优选为1.0×108Pa以下，更优选为0.5×108Pa以下。
本发明的胶粘层的厚度没有特别限定，但为了在引线键合时使胶粘层总体的缓冲性停留在很小，不优选太厚的结构，另一方面，为了在密封工序中也获得充分的密封性，某种程度的厚度是必要的。可以平衡性良好地实现这样的相反的两种特性的胶粘层的厚度优选为1-50μm，更优选为5-25μm。
本发明的耐热性胶粘带是直接在基材层上形成胶粘层而得到的，或者将分离器上形成的胶粘层转贴在基材上而间接地形成胶粘层而得到的。为了制备这样的耐热性胶粘带，可以将胶粘剂薄层涂布在基材或分离器上并进行干燥。另外，本发明的所谓胶粘带的“耐热性”，是指在加热工艺后，将胶粘带从被粘附物上剥离时没有可以用肉眼观察到的胶粘剂残渣。
在上述半导体装置的制造方法中使用的耐热性胶粘带优选在175℃气氛下基于JIS Z0237测定的粘附力为0.2N/19mm宽以上，更优选为0.3N/19mm宽以上，进一步优选为0.5N/19mm宽以上。如果不到0.2N/19mm宽，则粘附力过低，因此在被粘附物和胶粘带之间产生剥离。
以胶粘层的面与不锈钢板贴合的状态在200℃下加热1小时后，基于JIS Z0237测定的本发明的上述耐热性胶粘带在23℃下的粘附力为5.0N/19mm宽以下时，确实地得到在密封工序中防止树脂泄漏所必需的粘附力，同时在密封工序后容易剥离，还不会产生密封树脂的破损。上述粘附力更优选为2.0N/19mm宽以下。如果粘附力大于5.0N/19mm宽，则由于胶粘层和引线框或密封树脂的粘附力牢固，因此，如果强制地将胶粘层剥离，则胶粘层的表层残留在完成的封装上，难以得到良好的封装。为了良好地防止在密封工序中的树脂泄漏，上述粘附力优选为0.05N/19mm宽以上，更优选为0.1N/19mm宽以上。
接着，参照附图对使用了本发明的耐热性胶粘带的半导体装置的制造进行说明。图1是本发明的半导体装置的制造方法的一个例子的工序图。
如图1所示，本发明的半导体装置的制造方法至少包括半导体芯片15的载置工序、采用密封树脂17的密封工序、和将密封的结构物21切断的切断工序。
如图1(a)-(b)所示，载置工序是在金属制引线框10的管芯焊盘11c上键合半导体芯片15的工序，所述金属制引线框在外焊盘一侧(各图的下侧)贴合了耐热性胶粘带20。
所谓引线框10，是以例如铜等金属为材料并刻有QFN的端子图案的部件，并且在其电接点部分，有时被银、镍、钯、金等材料被覆(镀覆)。引线框10的厚度通常为100-300μm。另外，通过部分蚀刻等加工变薄的部分不在此限。
引线框10优选各个QFN的配置图案整齐地排列以便容易在后面的切断工序中切分。例如，如图2所示，在引线框10上排列成纵横的矩阵状的形状等被称为矩阵QFN或MAP-QFN等，是更加优选的引线框形状之一。特别是近年来，从生产性的观点看，由于在1个引线框中排列的封装数增多，因此不仅这些各自的封装被细密化，而且它们的排列数也明显增大，从而可以在一个密封部分密封多个封装。
如图2(a)-(b)所示，在引线框10的封装图案区域11中整齐地排列了QFN的基板设计，其在相邻的多个开口11a上排列了多个端子部11b。在通常的QFN的情况下，各自的基板设计(用图2(a)的格子区分的区域)由排列在开口11a周围的在下侧具有外引线面的端子部11b、配置在开口11a中央的管芯焊盘11c、和在开口11a的四角支撑管芯焊盘11c的damber11d构成。
耐热性胶粘带20至少粘贴在封装图案区域11的外侧，并优选粘贴在包含树脂密封的树脂密封区域的外侧所有周边的区域。引线框10通常在端边附近具有用于树脂密封时进行定位的导销用孔13，并优选粘贴在不堵塞导销用孔的区域。另外，由于在引线框10的长度方向配置多个树脂密封区域，因此优选穿过这些多个区域连续地粘贴耐热性胶粘带20。
在如上所述的引线框10上载置半导体芯片15，即作为半导体集成电路部分的硅晶片·芯片。为了固定该半导体芯片15，在引线框10上设置被称为管芯焊盘11c的固定区域，向该管芯焊盘11c键合(固定)的方法是使用导电糊19、粘合带、粘合剂等的各种方法。使用导电糊或热固性的粘合剂等进行芯片键合时，通常在150-200℃左右的温度下加热固化30分钟-90分钟左右。
一般来说，接着进行用键合用导线将上述引线框的端子部顶端和上述半导体芯片上的电极焊盘电连接的接线工序。如图1(c)所示，接线工序是用键合用导线16将引线框10的端子部11b(内引线)的顶端和半导体芯片15上的电极焊盘15a进行电连接的工序。作为键合用导线16，使用例如金线或铝线等。通常在加热到120-250℃的状态下，通过同时使用超声波产生的振动能和施加压力产生的压合能而进行接线。此时，通过对粘贴在引线框10上的耐热性胶粘带20一面进行真空抽吸，可以确实地固定在加热组(heat block)上。上面示出了将半导体芯片15正面朝上安装而进行接线工序的情况，而在将半导体芯片15正面朝下安装时，适合实施回流工序。
如图1(d)所示，密封工序是通过密封树脂17将半导体芯片15一侧单面密封的工序。密封工序是为了保护载置在引线框10上的半导体芯片15或键合用导线16而进行的，尤其是使用以环氧类的树脂为代表的密封树脂17在模具中进行成型是代表性的。此时，如图3所示，通常使用由具有多个模腔12的上模具18a和下模具18b构成的模具18，用多个密封树脂17同时进行密封工序。具体地，例如树脂密封时的加热温度为170-180℃，在该温度下固化几分钟后，再进行几小时模塑后固化。另外，优选耐热性胶粘带20在模塑后固化之前剥离。
如图1(e)所示，切断工序是将密封的结构物21切断成单个的半导体装置21a的工序。通常可列举使用方粒切粒机等的旋转切刃来切割密封树脂17的切断部17a的切断工序。
本发明的耐热性胶粘带20至少由基材层(20a)、和包含亲水性层状硅酸盐和胶粘剂的胶粘层(20b)构成。
耐热性胶粘带20由于预先被粘贴在引线框10上，因此在上述的制造工序中被加热。例如，在将半导体芯片15进行芯片键合时，通常在150-200℃左右的温度下加热固化30分钟-90分钟左右。进行引线键合时，例如在120-250℃左右的温度下进行，但由一个引线框10制造大量半导体装置时，作为直到对所有的半导体装置的键合结束的时间，认为每个引线框需要1小时以上。另外，进行树脂密封的情况下，由于需要使树脂充分熔融的温度，因而施加175℃左右的温度。因此，耐热性胶粘带20的基材层使用对这样的加热条件满足耐热性的材料。
这样，在本发明中，使用了包括具有耐热性的基材层的胶粘带作为耐热性胶粘带。因此，即使在接线工序等中被加热，也不易产生耐热性胶粘带因热膨胀而翘曲或者从引线框上剥离。另外，耐热性胶粘带可以发挥高的密封效果。因此，这样的耐热性胶粘带如果贴附在引线框的外焊盘一侧，则还可以确实地堵塞引线框的开口的部分。结果可以防止在密封工序中使用的密封树脂从该开口部分等的泄漏。因此，通过使用本发明的耐热性胶粘带，可以提高成品率而制造半导体装置。
实施例
下面，对具体地示出本发明的结构和效果的实施例等进行说明。
实施例1
使用25μm厚的聚酰亚胺膜(东レデユポン制造：カプトン100H)作为基材层。使用含有共聚物乳液的水分散型丙烯酸类胶粘剂，该共聚物乳液相对于100重量份含有20重量份作为亲水性层状硅酸盐的合成绿土(コ一プケミカル(株)制造，ル一センタイトSPN平均粒径50nm)的丙烯酸正丁酯，和2重量份丙烯酸为单体，以2重量份聚氧乙烯十二烷基硫酸钠为乳化剂，进而，相对于100重量份该含有亲水性层状硅酸盐和共聚物乳液的水分散型丙烯酸类胶粘剂，添加0.5重量份环氧类交联剂(三菱ガス化学制造，Tetad-C)，制备胶粘剂。使用该含有亲水性层状硅酸盐和共聚物乳液的水分散型丙烯酸类胶粘剂，制作设置了厚度10μm的胶粘层的耐热性胶粘带。该含有亲水性层状硅酸盐和共聚物乳液的水分散型丙烯酸类胶粘剂在使用レオメトリック·サイエンテイフイック公司制造的ARES，在频率1Hz、升温速度5℃/分、试样尺寸φ7.9mm的平行板的剪切储存弹性模式下进行测定时，在200℃的剪切储能模量为1.0×106Pa。该耐热性胶粘带在175℃气氛下的粘附力为0.32N/19mm宽。该耐热性胶粘带以贴合在不锈钢板上的状态在200℃加热1小时后，基于JIS Z 0237测定的在23℃下的粘附力为2.5N/19mm宽。
将该耐热性胶粘带贴合在铜制引线框的外焊盘一侧，所述铜制引线框排列了4个×4个实施了Ni/Pd镀覆和Au闪镀的单边16管脚型的QFN。使用环氧酚醛类银糊将半导体芯片与该引线框的管芯焊盘部分粘结，通过在180℃下进行1小时左右固化而固定。
接着，引线框从耐热性胶粘带一侧以真空抽吸的形态固定在加热到200℃的加热组上，再用ウイン ドクランパ一压紧引线框的周边部分而固定。使用115KHz引线键合机(新川制造：UTC-300B Isuper)，用φ25μm的金线(田中贵金属制造的GMG-25)在下述条件下将它们进行引线键合。另外，完成所有的键合需要大约1小时。
第一次键合加压：80g第一次键合超声波强度：550mW 第一次键合施加时间：10毫秒  第二次键合加压：80g 第二次键合超声波强度：500mW 第二次键合施加时间：8毫秒。
再通过环氧类密封树脂(日东电工制造，HC-300B6)，并使用模塑机(TOWA制造，Model-Y系列)，在175℃、预热设定3秒、注射时间12秒、固化时间90秒下对它们进行模塑后，剥离耐热性胶粘带。进而在175℃下进行2小时左右的模塑后固化，使树脂充分固化后，用方粒切粒机切断，得到各个QFN型半导体装置。
这样得到的QFN保持了在高温下的粘附力，并可以容易地将耐热性胶粘带剥离而不会留下残胶。另外，抑制密封树脂的渗出的遮挡性能也良好。即使是对于完成的封装，也可以得到未发现显著的附着污染物等的良好的封装，并可以抑制气体的发生量。
比较例1
将半导体芯片键合在未粘贴耐热性胶粘带的单个引线框上，夹在模具中，在与实施例1同样的条件下进行密封树脂时，产生树脂泄漏。
比较例2
在实施例1中，除了在制备含有共聚物乳液的水分散型丙烯酸类胶粘剂时不添加亲水性层状硅酸盐以外，与实施例1同样地制备含有相同组成的共聚物乳液的水分散型丙烯酸类胶粘剂。另外，使用该含有共聚物乳液的水分散型丙烯酸类胶粘剂，与实施例1同样地制作耐热性胶粘带，并与实施例1同样的制造QFN。这样得到的QFN在密封树脂的工序之前产生了树脂泄漏。与实施例1同样地测定的含有共聚物乳液的水分散型丙烯酸类胶粘剂的剪切储能模量为8.0×105Pa，该胶粘带在175℃气氛下的粘附力为0.05N/19mm宽，该胶粘带在200℃下加热1小时后，在23℃下的粘附力为3.0N/19mm宽。

Claims (6)

1.半导体装置制造用耐热性胶粘带，它是可用于半导体装置的制造方法的半导体装置制造用耐热性胶粘带，
其中所述半导体装置的制造方法至少包含如下步骤：在金属制引线框的管芯焊盘上载置半导体芯片，其中所述金属制引线框中焊盘外侧与耐热性胶粘带粘附以在其上键合所述半导体芯片，用密封树脂将半导体芯片单侧密封，以及将密封的结构物切断成单个的半导体装置，
其中，上述耐热性胶粘带包含基材层和包含亲水性层状硅酸盐和胶粘剂的胶粘层。
2.权利要求1所述的耐热性胶粘带，其中，上述胶粘层中，相对于100重量份胶粘剂，含有40重量份以下的亲水性层状硅酸盐。
3.权利要求1所述的耐热性胶粘带，其中，上述胶粘层含有水分散型丙烯酸类胶粘剂，所述丙烯酸类胶粘剂含有在乳化剂存在下进行乳液聚合而得到的共聚物乳液。
4.权利要求2所述的耐热性胶粘带，其中，上述胶粘层含有水分散型丙烯酸类胶粘剂，所述丙烯酸类胶粘剂含有在乳化剂存在下进行乳液聚合而得到的共聚物乳液。
5.权利要求1～4中任一项所述的耐热性胶粘带，其中，将上述胶粘层的一侧粘附在不锈钢板上，在175℃下基于JIS Z0237测定的粘附力为0.2N/19mm宽以上。
6.权利要求1～4中任一项所述的耐热性胶粘带，其中，将上述胶粘层的一侧粘附在不锈钢板上并在200℃加热1小时后在23℃下基于JIS Z0237测定的粘附力为5.0N/19mm宽以下。
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