TWI505416B - 樹脂密封用黏著帶及使用其之樹脂密封型半導體裝置之製造方法 - Google Patents

樹脂密封用黏著帶及使用其之樹脂密封型半導體裝置之製造方法 Download PDF

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TWI505416B
TWI505416B TW099139118A TW99139118A TWI505416B TW I505416 B TWI505416 B TW I505416B TW 099139118 A TW099139118 A TW 099139118A TW 99139118 A TW99139118 A TW 99139118A TW I505416 B TWI505416 B TW I505416B
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Taiwan
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resin
adhesive tape
lead frame
sealing
adhesive
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TW099139118A
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English (en)
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TW201125083A (en
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Yuichiro Yanagi
Hiroyuki Kondo
Shinji Hoshino
Daisuke Shimokawa
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Nitto Denko Corp
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Description

樹脂密封用黏著帶及使用其之樹脂密封型半導體裝置之製造方法
本發明係關於一種樹脂密封用黏著帶、以及使用其之樹脂密封型半導體裝置之製造方法。
近年來，於LSI(Large Scale Integration，大型積體電路)之安裝技術中，CSP(Chip Size/Scale Package，晶片尺寸封裝)技術受到關注。在該技術中，如以QFN(Quad Flat Non-leaded package，四方形扁平無引腳封裝)為代表之使引線端子取入封裝內部之形態之封裝在小型化及高積體化方面特別受到關注。
此種QFN中，可飛躍性提高引線框每單位面積之生產率之製造方法特別受到關注。作為該方法，可列舉包括以下步驟之製造方法：將複數個QFN用晶片排列於引線框之晶片焊墊(die pad)上，在模具之模腔內利用密封樹脂總括密封，此後，藉由切斷而分割為各別之QFN結構物。
於此種將複數個半導體晶片總括密封之QFN之製造方法中，樹脂密封時之由模塑模具夾緊之引線框區域僅為完全包覆封裝圖案區域之樹脂密封區域之外側之一部分。因此於封裝圖案區域，尤其係其中央部無法將引線框背面以充分之壓力按壓在模塑模具上，非常難以防止密封樹脂漏出至引線框背面側，容易產生QFN之端子等被樹脂包覆之問題。
因此，針對此種QFN之製造方法，較有效為將黏著帶貼附於引線框之背面側，藉由利用該黏著帶之自黏性(遮蔽)之密封效果而防止樹脂密封時樹脂漏出至引線框背面側之製造方法。
即，於半導體晶片搭載於引線框上後或者於實施打線接合後使耐熱性黏著帶貼合於引線框背面，就操作方面而言實質上較為困難，因此較理想為：首先，將耐熱性黏著帶貼合於引線框之背面側，此後，經過半導體晶片之搭載及打線接合，利用密封樹脂進行密封，然後剝離耐熱性黏著帶。
作為此種方法，已提出有使用具有厚度10 μm以下之黏著劑層之耐熱性黏著帶，於防止樹脂漏出之同時實施打線接合等一系列步驟之方法(例如專利文獻1)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2002-184801號公報
然而，於先前之半導體裝置之製造方法中，在利用密封樹脂之密封步驟中，根據貼合有耐熱性黏著帶之引線框之精度、模具，尤其係下模具之設計，而存在其等之間存在間隙之情況。
於此種情形時，由於在引線框與下模具之間產生之間隙，故於耐熱性黏著帶與引線框之間無法良好地夾緊模具部分之外周部而存在產生樹脂漏出之情況。
本發明是鑒於上述問題而形成，其目的為提供可有效率地防止樹脂密封時之樹脂漏出的樹脂密封用黏著帶、以及使用其之樹脂密封型半導體裝置之製造方法。
本發明之用於製造樹脂密封型半導體裝置之樹脂密封用黏著帶之特徵在於：包括基材層與積層於該基材層上之黏著劑層，並且該等基材層與黏著劑層之總膜厚為25~40 μm。
此種黏著帶之上述黏著劑層之厚度較佳為2 μm~25 μm。
該黏著帶較佳為用於當將搭載於引線框表面之半導體晶片進行樹脂密封時，貼附於上述引線框之至少一面上，且於密封後剝離者。
上述黏著劑層較佳為僅積層於上述基材層之單面上。
此外，該黏著帶較佳為包括與黏著劑層接觸之剝離片；且該剝離片在剝離角度為90±15°時之剝離強度為1.5 N/50 mm寬度以下；在剝離角度為120±15°時之剝離強度為1.2 N/50 mm寬度以下；在剝離角度為150±15°時之剝離強度為1.0 N/50 mm寬度以下；或者在剝離角度為180+0°~180-15°時之剝離強度為1.0 N/50 mm寬度以下。
本發明之樹脂密封型半導體裝置之製造方法之特徵在於包括下述步驟：將上述黏著帶貼附於引線框之至少一面；在上述引線框上搭載半導體晶片；利用密封樹脂密封該半導體晶片側；在密封後剝離上述黏著帶。
此種方法中，較佳為利用具有0.8~2.0 Pa‧s黏度之密封樹脂進行上述密封，或者藉由在160~190℃之樹脂注入溫度下之射出成形而進行上述密封，或者藉由在150~220 kN之樹脂注入壓力下之射出成形而進行上述密封，及/或在3~7 kN之模具夾緊壓力下進行上述密封。
進而較佳為，自黏著帶之貼附至樹脂密封為止之期間，自引線框側隔著該引線框對黏著帶進行放射線照射。
利用本發明之樹脂密封用黏著帶，可有效率地防止樹脂密封時之樹脂漏出。
另外，根據本發明之樹脂密封型半導體裝置之製造方法，藉由利用上述黏著帶，可有效率地防止樹脂密封時之樹脂漏出，可實現成品率之提高。
本發明之樹脂密封用黏著帶至少包括基材層與積層於其上之黏著劑層。該樹脂密封用黏著帶係於半導體製造方法之樹脂密封時使用。
(基材層)
對基材層並無特別限定，只要為包含作為本領域中所使用之黏著帶之基材而使用之材料者，則可使用任意者。
尤其，基材層較適宜為對通常之半導體製造製程中使用之加熱，特別是樹脂密封時之加熱具有耐性之層。例如，可列舉具有170℃以上、200℃以上、250℃以上、300℃以上之耐熱性者。密封樹脂由於一般經賦予175℃左右之溫度，故較佳為在此種溫度條件下不產生顯著之基材層之收縮或基材本身之破壞等者。
另外，就其他觀點而言，基材層較佳為在300℃以下不具有玻璃轉移溫度(Tg)。藉由使用此種基材層，在半導體裝置之製造步驟中，即使於超過基材層之Tg而加熱黏著帶之情形時，亦可防止黏著帶之變形等，防止引線框之翹曲等。由此，可確實地實現樹脂密封時之遮蔽功能，提高打線接合之成功率。
此處，Tg係根據ASTM D696，利用熱機械分析裝置(例如SIS Technology公司製造，TMA/SS 600)所求出之值。即，於19.6 mN之負荷下，將基材層之樣品(例如厚度1 mm×寬度4 mm)以10℃/分鐘之速度自室溫升溫，利用熱分析裝置測定厚度方向之熱膨脹量，繪製熱膨脹量與溫度之關係圖，在預計為玻璃轉移溫度之點前後之曲線上引出切線，由該等切線之交點求出之值。因此，所謂於300℃以下不具有玻璃轉移溫度，係指無法分辨出預計為玻璃轉移溫度之溫度，幾乎看不到切線之交點。
就防止伴隨該基材層收縮之引線框翹曲之觀點而言，基材層在180℃下加熱3小時之後之熱收縮率較佳為0.40%以下。
此處，所謂熱收縮率，係表示將5 cm見方之基材層在180℃下加熱3小時時尺寸變化相對於加熱前尺寸(5 cm)100%之比例(%)。該熱收縮率可利用市售之投影機(Mitutoyo Corporation製造之投影機，PJ-H3000F)來測定。
基材層例如可利用聚萘二甲酸乙二酯(polyethylene naphthalate，PEN)、聚醚碸(polyether sulfone，PES)、聚醚醯亞胺(polyether imide，PEI)、聚碸(polysulfone，PSF)、聚苯硫醚(polyphenylene sulfide，PPS)、聚醚醚酮(polyether ether ketone，PEEK)、聚芳酯(polyarylate，PAR)、芳族聚醯胺、聚醯亞胺、聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)等樹脂，液晶聚合物(liquid crystalline polymer，LCP)，鋁等金屬箔，玻璃布等而形成。尤其，線性熱膨脹係數為1.0×10-5 ~3.0×10-5 /K左右之聚醯亞胺材料由於加工性、操作性高，耐熱性及強度亦優異，故為最佳之材料之一。
另外，基材層可為單層結構，亦可為積層結構。
就黏著帶之處理性(例如難以產生黏著帶之折斷或破裂)之觀點而言，基材層之厚度較佳為5 μm以上，更佳為10 μm以上，另一方面，就黏著帶之剝離性之觀點而言，基材層之厚度較佳為35 μm以下，更佳為30 μm以下。
另外，就其他觀點而言，貼附本發明之黏著帶之引線框由於如下所述為金屬材料，故線性熱膨脹係數一般為1.8~1.9×10-5 /K左右。因此，如果黏著帶之線性熱膨脹係數與引線框之線性熱膨脹係數相差太大，則於貼合有兩者之狀態下加熱時，由兩者之熱膨脹之差異而產生變形，結果於黏著帶上造成皺紋、剝落。因此，構成黏著帶之基材層之線性熱膨脹係數較適宜為接近引線框材料之1.0×10-5 ~3.0×10-5 /K左右，較佳為1.5×10-5 ~2.5×10-5 /K以下。
其中，線性熱膨脹係數係根據ASTM D696，藉由TMA(thermomechanical analysis，熱機械分析)測定而得之值。
(黏著劑層)
黏著劑層只要具有耐熱性，則可藉由本領域中常用之黏著劑而形成。該黏著劑可為感壓型、感熱型、感光型中之任一種類型，但較適合為藉由能量射線之照射而硬化之類型之黏著劑。由此，使用後可容易地進行自被加工物上之剝離。此外，黏著劑層可形成於基材層之兩側，較適宜為僅形成於單側。
作為構成黏著劑層之黏著劑，例如可列舉丙烯酸系黏著劑、聚矽氧系黏著劑、橡膠系黏著劑、環氧系黏著劑等各種黏著劑。
丙烯酸系黏著劑例如可列舉包含藉由含有(甲基)丙烯酸烷基酯之單體之共聚合而獲得之丙烯酸系共聚物者。此外，在本說明書中，所謂(甲基)丙烯酸烷基酯，係指丙烯酸烷基酯及/或甲基丙烯酸烷基酯。
作為(甲基)丙烯酸烷基酯，可列舉(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十二烷基酯等。其中，較佳為丙烯酸與(甲基)丙烯酸2-乙基己酯之共聚合、(甲基)丙烯酸甲酯及/或(甲基)丙烯酸乙酯與丙烯酸、(甲基)丙烯酸2-乙基己酯之共聚合。
黏著劑層，尤其係含有丙烯酸系黏著劑之黏著劑層中可含有交聯劑。
作為交聯劑，例如可列舉異氰酸酯系交聯劑、環氧系交聯劑、氮丙啶系化合物、螯合物系交聯劑等。
對交聯劑之含量並無特別限定，相對於100重量份之丙烯酸系聚合物，較適合為0.1~15重量份，較佳為0.5~10重量份。藉由以該範圍使用交聯劑，可適度設定黏著劑層之黏彈性，且可確保黏著劑層對導電性圖案或密封樹脂之適度黏著力。因此，即便在黏著帶之剝離時，亦無剝離或損壞密封樹脂或者黏著劑層之一部分附著於導電性圖案或密封樹脂之情況。此外，可抑制黏著劑層之過度硬化。
黏著劑層中可進一步添加塑化劑、顏料、染料、抗老化劑、抗靜電劑、用於改善彈性模數等黏著劑層之物性之填充劑等本領域中通常使用之各種添加劑。
就黏著劑層與引線框之充分黏著力之觀點而言，黏著劑層之厚度較佳為2 μm以上，更佳為3 μm以上，進而較佳為4 μm以上，另一方面，就充分之打線接合性之觀點而言，較佳為35 μm以下，更佳為30 μm以下。
(黏著帶之製造)
黏著劑層可藉由製備黏著劑成分，將其於基材層上塗布/乾燥而形成。作為黏著劑成分之塗布方法，可採用棒塗布機塗布、氣刀塗布、凹版塗布、反向式凹版塗布、反輥塗布、模唇塗布、模頭塗布、浸漬塗布、套版印刷、軟版印刷、絲網印刷等各種方法。另外，亦可另行採用在剝離襯墊上形成黏著劑層之後將其貼合於基材膜上之方法等。
(黏著帶)
本發明之黏著帶較適合為基材層與黏著劑層之總膜厚為25~40 μm，較佳為25~35 μm。
藉由設為此種範圍之總膜厚，如下所述，可於貼附於引線框時防止皺紋之產生，並且例如與將貼附有該黏著帶之引線框夾持於模具中時之夾緊壓力等保持平衡，可有效地防止樹脂自模具之間漏出。
另外，本發明之黏著帶就對引線框之充分(例如，不產生步驟中之帶剝離)黏著力之觀點而言，在黏著帶對引線框之剝離角度為180°時之黏著力適宜為0.01 N/19 mm寬度以上，較佳為0.05 N/19 mm寬度以上，更佳為0.10 N/19 mm寬度以上，進而較佳為0.15 N/19 mm寬度以上。另一方面，就防止黏著帶黏附失敗時黏著帶剝離中之殘膠以及晶片焊墊部等之變形之觀點而言，上述黏著力適宜為10.0 N/19 mm寬度以下，較佳為6.0 N/19 mm寬度以下，更佳為5.0 N/19 mm寬度以下，進而較佳為4.0 N/19 mm寬度以下。
在黏著帶對密封樹脂之剝離角度為180°時之黏著力適宜為10.0 N/19 mm寬度左右以下，較佳為6.0 N/19 mm寬度左右以下，更佳為5.0 N/19 mm寬度左右以下。
此處，該黏著力係於測定溫度23±2℃、剝離角度180°、剝離速度為300 mm/分鐘(根據JIS Z0237)之條件下藉由自引線框上剝離而測定時之值。上述測定可以藉由市售之測定裝置(島津製作所製造，Autograph AG-X等)進行。
另一方面，黏著帶係首先貼附於引線框上，於任意階段自引線框上剝離，但於具有太強之黏著力之情形時，不僅剝離變得困難，而且視情況，由於用於剝離之應力而導致模塑之樹脂之剝離、破損。因此，強黏著至抑制密封樹脂滲出之黏著力以上之情況當然欠佳。例如，在半導體裝置之製造步驟中，根據JIS C2107所得之25℃下之黏著力適宜為5~10000 N/m左右。進而，在200℃下加熱1小時後之對引線框之黏著力適宜為0.05 N/19 mm寬度左右以上，較佳為0.1 N/19 mm寬度左右。另外，上述黏著力適宜為6 N/19 mm寬度左右以下，較佳為4 N/19 mm寬度左右以下。尤佳為0.05~6.0 N/19 mm寬度左右，0.1~4.0 N/19 mm寬度左右，進而較佳為0.1~2.0 N/19 mm寬度左右。
本發明之黏著帶進而較佳為具有剝離片。剝離片係為保護黏著劑層而與黏著劑層接觸形成之薄片。該黏著帶根據黏著劑層中所含有之黏著劑之種類等，較佳為具有特定值之剝離強度。剝離強度可根據剝離黏著帶時之角度而適當調整。例如，較佳為滿足以下所示之剝離角度時之剝離強度之至少一個。此處之剝離強度係於測定溫度23±2℃，剝離角度75~195°、較佳為90~180°，剝離速度300 mm/分鐘(根據TMA0001法)之條件下藉由自本發明之黏著帶上剝離而測定時之值。
剝離片在剝離角度為90±15°時之剝離強度適宜為1.5 N/50 mm寬度以下、1.0 N/50 mm寬度以下、0.5 N/50 mm寬度以下、0.3 N/50 mm寬度以下、0.2 N/50 mm寬度以下之程度。
剝離片在剝離角度為120±15°時之剝離強度適宜為1.2 N/50 mm寬度以下、1.0 N/50 mm寬度以下、0.8 N/50 mm寬度以下、0.6 N/50 mm寬度以下、0.3 N/50 mm寬度以下之程度。
剝離片在剝離角度為150±15°時之剝離強度適宜為1.0 N/50 mm寬度以下、0.8 N/50 mm寬度以下、0.6 N/50 mm寬度以下、0.5 N/50 mm寬度以下、0.3 N/50 mm寬度以下、0.2 N/50 mm寬度以下之程度。
剝離片在剝離角度為180+0°~180-15°時之剝離強度適宜為1.0 N/50 mm寬度以下、0.8 N/50 mm寬度以下、0.6 N/50 mm寬度以下、0.5 N/50 mm寬度以下、0.3 N/50 mm寬度以下、0.2 N/50 mm寬度以下之程度。
藉由將剝離強度設為此種範圍，即使在使用通常利用之帶貼附裝置等之情形時，亦不需要用於剝離該剝離片之過度之剝離強度，不產生黏著帶之皺紋、貼附位置之偏移，可防止使黏著帶上負載殘留應力。藉此，可抑制引線框之翹曲、密封樹脂之樹脂漏出等產生。
剝離片包括使用本領域中常用之材料，以單層或多層結構形成之剝離基材，上述材料例如為：聚氯乙烯、聚偏二氯乙烯、聚對苯二甲酸乙二酯等聚酯、聚醯亞胺、聚醚醚酮；低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、隨機共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴；聚胺酯、乙烯-醋酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(隨機、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、氟樹脂、纖維素系樹脂以及該等之交聯體等聚合物等。
另外，剝離片適宜為對剝離基材之至少與黏著劑層接觸之面實施脫模處理，使得實質上不與黏著劑層接著者。脫模處理可使用本領域中公知之方法及材料進行。例如可列舉利用聚矽氧樹脂之處理、利用氟樹脂之脫模處理等。具體而言，可例示Cerapeel系列(Toray Advanced Film Co.,Ltd.)之輕剝離等級及中剝離等級等。
(樹脂密封型半導體裝置之製造方法以及防止樹脂漏出之方法)
本發明之樹脂密封型半導體裝置中，黏著帶尤其於樹脂密封時使用。即，本發明之黏著帶用於當對搭載於引線框表面之半導體晶片進行樹脂密封時，貼附於引線框之至少一面，例如背面(與搭載有半導體晶片之面相反側之面，以下相同)，且於密封後剝離。
本發明之製造方法中，包含下述步驟：將本發明之黏著帶貼合於引線框之至少一面例如背面上；於該晶片焊墊表面上搭載半導體晶片；利用密封樹脂密封半導體晶片側；在密封後剝離黏著帶。
進而，自黏著帶之貼合至剝離之間，可任意包括下述步驟等：進行電漿處理之步驟；樹脂密封後之密封樹脂之切斷步驟；自引線框側隔著該引線框對黏著帶進行放射線照射之步驟；於晶片焊墊上搭載半導體晶片之後之接線步驟。
此種半導體裝置之製造方法中，本發明之黏著帶主要用於防止樹脂漏出。另外，黏著帶可貼合於引線框中以樹脂密封之區域以外之表面與背面之任意區域。
具體而言，首先，如圖1(a)所示，將本發明之黏著帶20貼附於引線框11之一面，即背面。
引線框11通常係由Cu系材料(Cu-Fe-P等)、Fe系材料(Fe-Ni等)等之金屬板形成。另外，可雕刻QFN之端子圖案。尤佳為以銀、鎳、鈀、金等包覆(鍍敷)於引線框內之電接點部分(與下述半導體晶片之連接部分)。引線框11之厚度通常可列舉100~300 μm左右。
為了在後續切斷步驟中容易切開，引線框11較佳為複數個規定之配置圖案(例如各QFN之配置圖案)排列而成。具體而言，如圖2(a)及(b)所示，於引線框11上，封裝圖案區域10以矩陣狀排列而成者稱為矩陣QFN、MAP-QFN等，係最佳者之一。
引線框11通常包括晶片焊墊11c及引線端子11b。該等可分離地設置，但較佳為如圖2(b)所示，藉由由鄰接之複數個開口11a規定之複數個引線端子11b、排列於開口11a之中央之晶片焊墊11c、任意地將晶片焊墊11c支持於開口11a之4個角之連接桿(tie bar)11d而形成一體者。另外，晶片焊墊11c及引線端子11b等可形成為實現散熱等其他功能者。
黏著帶20對引線框11之貼附至少適合在引線框11之封裝圖案區域10、較引線框11之比封裝圖案區域10更外側之區域即包括經樹脂密封之樹脂密封區域外側四周之區域、或者封裝圖案區域10及包括封裝圖案區域10外側四周之區域進行。
於在包括樹脂密封區域外側四周之區域貼附本發明之黏著帶之情形時，不僅貼附於引線框之背面，亦可貼附於表面。於貼附於封裝圖案區域10及包括封裝圖案區域10外側四周之區域之情形時，較佳為僅貼附於引線框之背面。
引線框11由於通常在端邊附近具有用於進行樹脂密封時之位置決定之導銷用孔(例如圖2(a)之13)，故較佳為於不堵塞該孔之區域貼附黏著帶。另外，封裝圖案區域10由於在引線框11之縱向上配置有複數個，因此較佳為以遍及該等複數個區域之方式連續地貼附黏著帶20。
繼而，如圖1(b)所示，在引線框11表面(未貼附黏著帶20之面)搭載半導體晶片15。
通常，如上所述，引線框11設置有用於固定半導體晶片15之稱為晶片焊墊11c之固定區域，因此半導體晶片15搭載於晶片焊墊11c上。
半導體晶片15於晶片焊墊11c上之搭載例如利用使用導電性糊19、接著帶、接著劑(例如熱硬化性接著劑)等之各種方法。於使用導電性糊、接著劑等搭載進行之情形時，通常於150~200℃左右之溫度下加熱硬化30分鐘~90分鐘左右。
此處，為了使黏著帶之黏著劑層硬化而實現高彈性化，可對所得引線框11自引線框11側進行放射線照射。
放射線之種類並無特別限定，可根據黏著劑層中所含有之黏著劑之種類而適當調整。例如可列舉紫外線、電子束等。其中，較佳為紫外線。對紫外線之波長並無特別限定，適合選擇用於普通光聚合之波長，例如較適合為250~400 nm之波長之紫外線。
作為照射紫外線之方法，適合利用先前公知之紫外線發生裝置。具體而言，可列舉採用放電燈方式(弧光燈)、閃光方式、雷射方式等之紫外線裝置。其中，就工業生產方法之觀點而言，較佳為利用放電燈方式者，此外，就放射線之照射效率之觀點而言，較佳為利用高壓水銀燈、金屬鹵化物燈者。
放射線之照射量例如適宜為可提高黏著劑層中所含有之聚合起始劑等之效率之程度。具體而言，可列舉10~1000 mJ/cm2 左右，較佳為50~600 mJ/cm2 左右。其係由於可實現黏著劑層之適度硬化。
該放射線照射可於將黏著帶20貼附於引線框11之後、於下述打線接合之前中之任何階段進行。例如，較佳為於自黏著帶之貼附至樹脂密封為止之期間進行。其原因在於，若於將黏著帶20貼附於引線框11之前進行，則由於黏著劑層之硬化而導致黏著力降低，變得難以貼附，另外，可能導致下述密封樹脂之漏出。
繼而，任意地如圖1(c)所示，將半導體晶片15表面之電極焊墊(electrode pad)(未圖示)與引線框11進行打線接合(接線)。
打線接合係利用接合線16例如金線或鋁線等進行。通常，於加熱至150~250℃之狀態下，藉由將由超聲波產生之振動能量與由加壓產生之壓接能量併用而進行。此時，藉由將貼附於引線框之黏著帶面抽成真空，可確實地固定於加熱塊(heat block)上。
另外，作為半導體晶片15，於進行面向下(face down)安裝時，可適宜進行回流焊步驟。
繼而，將密封樹脂17射出成形。即，將引線框11夾在上下模具(未圖示)中，射出密封樹脂17(例如環氧樹脂等)，將半導體晶片15密封。就容易射出之觀點而言，此時之密封樹脂例如具有約0.8~2.0 Pa‧s、較佳為約1.0~2.0 Pa‧s之黏度。另外，樹脂黏度可利用市售之樹脂黏度測定裝置(例如黏度計、毛細管流變儀等)測定。另外，密封較佳為於160~190℃之注入溫度下注射。進而，樹脂密封適宜在150~220 kN之注入壓力下射出成形。此時之密封可為單面密封及雙面密封中之任一種。於雙面密封之情形時，如上所述，適合在包括引線框之樹脂密封區域外側四周之區域、引線框之表面及/或背面貼附黏著帶。於封裝圖案區域10及包括封裝圖案區域10外側四周之區域之單面貼附黏著帶時，較佳為進行單面密封。於進行此種密封之情形時，尤其可適宜使用本發明之黏著帶，故較佳。
半導體晶片之密封係為了保護搭載於引線框11上之半導體晶片15及接合線16而進行。例如，使用環氧系樹脂等，藉由射出成形而於模具中成型之方法為代表性方法。於此情形時，較佳為使用具有複數個模腔之包含上模具與下模具之模具，將複數個半導體晶片同時密封。此時之模具之夾緊壓力例如適宜為3~7 kN左右。通常，樹脂密封時之加熱溫度為170~180℃左右，於該溫度下硬化數分鐘之後，進一步進行數小時之模塑後硬化(post mold cure)。
其後，如圖1(d)所示，自模具中取出包括密封樹脂17之引線框11。
如圖1(e)所示，剝離貼附於引線框11背面之黏著帶20。
密封後之黏著帶20之剝離較佳為於上述模塑後硬化之前進行。
其後，如圖1(f)所示，將包含密封樹脂17之引線框11分割為各個半導體晶片15，可獲得半導體裝置21。
各個半導體晶片15之分割可使用切塊機等旋轉切斷刃等進行。
另外，於半導體晶片之樹脂密封時，本發明之黏著帶只要貼附於引線框之單面，較佳為背面即可，關於上述圖1(a)~圖1(c)之步驟，可於搭載半導體晶片之後貼附黏著帶，亦可於將半導體晶片打線接合之後貼附黏著帶。其中，較佳為按照上述圖1(a)~圖1(c)之順序進行。另外，根據半導體晶片之結構，可不進行打線接合。
以下對本發明之樹脂密封用黏著帶以及使用其之樹脂密封型半導體裝置之製造方法進行詳細說明。
另外，於以下實施例中，只要無特別說明，則份及%等為質量基準。
實施例1
使用25 μm厚之聚醯亞胺膜(DUPONT-TORAY，Kapton 100H，線性熱膨脹係數2.7×10-5 /K，Tg：402℃)作為基材層，對100份之聚矽氧系黏著劑(Dow Corning Toray Silicone公司製造，SD4584)添加2.5份之鉑觸媒，於上述基材層之單面塗布/乾燥，製作具有厚度約6 μm之黏著劑層之耐熱性黏著帶(總膜厚：31 μm)。
實施例2
使用12.5 μm厚之聚醯亞胺膜(DU PONT-TORAY，Kapton 50H，線性熱膨脹係數2.7×10-5 /K，Tg：402℃)作為基材層，於該基材層之單面，與實施例1同樣地使用聚矽氧系黏著劑，製作具有厚度約18 μm之黏著劑層之耐熱性黏著帶(總膜厚：30.5 μm)。
實施例3
使用25 μm厚之聚對苯二甲酸乙二酯膜(TORAY製造之Lumirror S10，線性熱膨脹係數1.2×10-5 /K，Tg：67℃)作為基材層。於該基材層之單面，使用在100份之包含丙烯酸丁酯-丙烯酸乙酯-丙烯酸(丙烯酸丁酯/丙烯酸乙酯/丙烯酸=70份/30份/4份)之聚合物中均勻混合有3份之異氰酸酯系交聯劑(商品名「CORONATE L」，日本聚胺酯工業股份有限公司製造)、2份之環氧系交聯劑(商品名「TETRAD-C」三菱瓦斯化學(股))及甲苯之黏著劑，製作具有厚度約10 μm之黏著劑層之耐熱性黏著帶(總膜厚：35 μm)。
比較例1
除了將黏著劑層之厚度設為約35 μm以外，與實施例1同樣地製作耐熱性黏著帶(總膜厚：60 μm)。
比較例2
使用12.5 μm厚之聚醯亞胺膜(DUPONT-TORAY，Kapton 50H，線性熱膨脹係數2.7×10-5 /K，Tg：402℃)作為基材層，製作使與實施例3同樣之丙烯酸系黏著劑為約6 μm厚度之耐熱性黏著帶(總膜厚：18.5 μm)。
<性能評價>
使用帶層壓裝置PL-55TRM(日東電工製造)，將實施例及比較例中製造之黏著帶以於常溫下密合之方式平穩地貼合於銅製引線框背面之外焊墊(outer pad)側，其中上述銅製引線框係於端子部實施有鍍銀之單邊16 Pin型之QFN排列成4個×4個之銅製引線框。另外，該引線框之晶片焊墊係使用搭載有半導體晶片，且藉由金線而打線接合者。
繼而，利用環氧系密封樹脂(日東電工製造之HC-300，例如，樹脂黏度：0.8~2.0 Pa‧s)，使用模塑機(TOWA製造之Model-Y-serise)，於175℃、預熱40秒、注射時間11.5秒、注射壓力150~220 kN、硬化時間120秒之條件下進行模塑。此時，模具之夾緊壓力約為3~7 kN。
然後，剝離貼附於引線框背面之黏著帶。
進而於175℃下進行3小時左右之模塑後硬化，使樹脂充分硬化，然後藉由切塊機切斷，獲得各個QFN型半導體裝置。如此而製造QFN型半導體裝置之後，以目視確認樹脂漏出。
其結果為，於實施例1~3中未確認到樹脂漏出。另一方面，於比較例1中確認60%以上之端子上有樹脂漏出。另外，比較例2中確認80%以上之端子上有樹脂漏出。
另外，對實施例1~3之黏著帶分別貼合厚度50 μm之PET隔片(三菱化學聚酯膜公司製造，MRS-50S)及厚度38 μm之PET隔片(Toray Advanced Film公司製造，#38 Cerapeel)，製作黏著帶。
測定該等黏著帶在剝離角度90°、120°、150°或180°時之隔片剝離力(單位：N/50 mm)。隔片剝離力之評價結果示於表1及表2中。
根據表1及表2，黏著力均為0.3 N/50 mm寬度以下。另外，於使用該等黏著帶之情形時，黏著帶之貼合位置之偏移、引線框之翹曲、密封樹脂之漏出均未確認到。
[產業上之可利用性]
本發明之黏著帶可廣泛用於半導體裝置之製造方法。
10．．．封裝圖案區域
11．．．引線框
11a．．．開口
11b．．．引線端子
11c．．．晶片焊墊
11d．．．連接桿
13．．．導銷用孔
15．．．半導體晶片
16．．．接合線
17．．．密封樹脂
19．．．導電性糊
20．．．黏著帶
21．．．半導體裝置
圖1(a)~(f)係表示本發明之半導體裝置之製造方法之一例之步驟圖；及
圖2係表示本發明之半導體裝置之製造方法中使用之引線框之一個例子之平面圖(a)與重要部位放大圖(b)。
10．．．封裝圖案區域
11．．．引線框
11a．．．開口
11b．．．引線端子
11c．．．晶片焊墊
15．．．半導體晶片
16．．．接合線
17．．．密封樹脂
19．．．導電性糊
20．．．黏著帶
21．．．半導體裝置

Claims (10)

  1. 一種樹脂密封用黏著帶，其係用於樹脂密封型半導體裝置之製造者，且特徵在於：具有基材層、積層於該基材層上之黏著劑層、及與該黏著劑層接觸之剝離片，並且該等基材層與黏著劑層之總膜厚為25~40μm，該黏著劑層係聚矽氧系黏著劑，且該剝離片係：在剝離角度為90±15°時之剝離強度為1.0N/50mm寬度以下；在剝離角度為120±15°時之剝離強度為1.0N/50mm寬度以下；在剝離角度為150±15°時之剝離強度為0.8N/50mm寬度以下；或者在剝離角度為180+0°~180-15°時之剝離強度為0.8N/50mm寬度以下。
  2. 如請求項1之黏著帶，其中上述黏著劑層之厚度為2μm~25μm。
  3. 如請求項1或2之黏著帶，其係用於當將搭載於引線框表面之半導體晶片進行樹脂密封時，貼附於上述引線框之至少一面上，且於密封後剝離者。
  4. 如請求項1或2之黏著帶，其中上述黏著劑層僅積層於上述基材層之單面上。
  5. 一種樹脂密封型半導體裝置之製造方法，其特徵在於包括下述步驟： 將如請求項1至4中任一項之黏著帶貼附於引線框之至少一面；於上述引線框上搭載半導體晶片；利用密封樹脂密封該半導體晶片側；在密封後剝離上述黏著帶。
  6. 如請求項5之樹脂密封型半導體裝置之製造方法，其係利用具有0.8~2.0Pa．s之黏度之密封樹脂進行上述密封。
  7. 如請求項5或6之樹脂密封型半導體裝置之製造方法，其係藉由在160~190℃之樹脂注入溫度下之射出成形而進行上述密封。
  8. 如請求項5或6之樹脂密封型半導體裝置之製造方法，其係藉由在150~220kN之樹脂注入壓力下之射出成形而進行上述密封。
  9. 如請求項5或6之樹脂密封型半導體裝置之製造方法，其係於3~7kN之模具夾緊壓力下進行上述密封。
  10. 如請求項5或6之樹脂密封型半導體裝置之製造方法，其係進而於自黏著帶之貼附至樹脂密封為止之期間，自引線框側隔著該引線框對黏著帶進行放射線照射。
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