CN1638067A - 制造应变mosfet的结构和方法 - Google Patents
制造应变mosfet的结构和方法 Download PDFInfo
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- CN1638067A CN1638067A CNA2005100042715A CN200510004271A CN1638067A CN 1638067 A CN1638067 A CN 1638067A CN A2005100042715 A CNA2005100042715 A CN A2005100042715A CN 200510004271 A CN200510004271 A CN 200510004271A CN 1638067 A CN1638067 A CN 1638067A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 41
- 229920005591 polysilicon Polymers 0.000 claims description 41
- 150000004767 nitrides Chemical class 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 20
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/707,690 | 2004-01-05 | ||
US10/707,690 US7247912B2 (en) | 2004-01-05 | 2004-01-05 | Structures and methods for making strained MOSFETs |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638067A true CN1638067A (zh) | 2005-07-13 |
CN100342507C CN100342507C (zh) | 2007-10-10 |
Family
ID=34710359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100042715A Active CN100342507C (zh) | 2004-01-05 | 2005-01-04 | 制造应变mosfet的结构和方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7247912B2 (zh) |
JP (1) | JP4378293B2 (zh) |
CN (1) | CN100342507C (zh) |
Cited By (5)
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WO2012000302A1 (zh) * | 2010-07-01 | 2012-01-05 | 中国科学院微电子研究所 | 一种半导体器件及其形成方法 |
CN103915344A (zh) * | 2013-01-08 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN104022152A (zh) * | 2014-06-04 | 2014-09-03 | 重庆大学 | 带有压应变薄膜应变源的双栅p沟道MOSFET及制备方法 |
CN104813453A (zh) * | 2012-12-20 | 2015-07-29 | 英特尔公司 | 薄晶体管元件的从硅到硅锗的转换 |
CN106560925A (zh) * | 2015-10-05 | 2017-04-12 | 台湾积体电路制造股份有限公司 | 集成电路及其制造方法 |
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US7410846B2 (en) * | 2003-09-09 | 2008-08-12 | International Business Machines Corporation | Method for reduced N+ diffusion in strained Si on SiGe substrate |
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US6872641B1 (en) * | 2003-09-23 | 2005-03-29 | International Business Machines Corporation | Strained silicon on relaxed sige film with uniform misfit dislocation density |
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US7129126B2 (en) * | 2003-11-05 | 2006-10-31 | International Business Machines Corporation | Method and structure for forming strained Si for CMOS devices |
US7015082B2 (en) * | 2003-11-06 | 2006-03-21 | International Business Machines Corporation | High mobility CMOS circuits |
US7029964B2 (en) | 2003-11-13 | 2006-04-18 | International Business Machines Corporation | Method of manufacturing a strained silicon on a SiGe on SOI substrate |
US7122849B2 (en) | 2003-11-14 | 2006-10-17 | International Business Machines Corporation | Stressed semiconductor device structures having granular semiconductor material |
US7247534B2 (en) * | 2003-11-19 | 2007-07-24 | International Business Machines Corporation | Silicon device on Si:C-OI and SGOI and method of manufacture |
US7049662B2 (en) * | 2003-11-26 | 2006-05-23 | International Business Machines Corporation | Structure and method to fabricate FinFET devices |
US7198995B2 (en) * | 2003-12-12 | 2007-04-03 | International Business Machines Corporation | Strained finFETs and method of manufacture |
US7247912B2 (en) * | 2004-01-05 | 2007-07-24 | International Business Machines Corporation | Structures and methods for making strained MOSFETs |
US7118999B2 (en) * | 2004-01-16 | 2006-10-10 | International Business Machines Corporation | Method and apparatus to increase strain effect in a transistor channel |
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WO2012000302A1 (zh) * | 2010-07-01 | 2012-01-05 | 中国科学院微电子研究所 | 一种半导体器件及其形成方法 |
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CN104022152A (zh) * | 2014-06-04 | 2014-09-03 | 重庆大学 | 带有压应变薄膜应变源的双栅p沟道MOSFET及制备方法 |
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US11276692B2 (en) | 2015-10-05 | 2022-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Manufacturing method of integrated circuit |
US11916071B2 (en) | 2015-10-05 | 2024-02-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having epitaxy source/drain regions |
Also Published As
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US20050145954A1 (en) | 2005-07-07 |
US20070218620A1 (en) | 2007-09-20 |
US7749842B2 (en) | 2010-07-06 |
CN100342507C (zh) | 2007-10-10 |
JP4378293B2 (ja) | 2009-12-02 |
JP2005197734A (ja) | 2005-07-21 |
US7247912B2 (en) | 2007-07-24 |
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