JP2005197734A - 歪みSiMOSFETを形成するための構造および方法 - Google Patents
歪みSiMOSFETを形成するための構造および方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 title description 2
- 239000010703 silicon Substances 0.000 title description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000007547 defect Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 45
- 229920005591 polysilicon Polymers 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000010408 film Substances 0.000 description 56
- 230000008569 process Effects 0.000 description 20
- 238000005468 ion implantation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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Abstract
【解決手段】歪みSi膜は、非導電性基板の表面に垂直方向に配設されるフィンを、緩和SiGeブロックの側面にSiを選択成長することで形成される。次に、例えば酸化物、高k材料、またはこの2つの組合せのような誘電体ゲートを、歪みSi膜の表面に形成することができる。さらに、歪みSi膜の応力に実質的に影響を及ぼすことなく、緩和SiGeブロックを除去して、以前緩和SiGeブロックが占めていた表面上に第2のゲート酸化物を形成することができる。かくして、非導電性基板上に垂直方向に配設された歪みSiフィンを有する半導体デバイスを、チャネルが減少した欠陥数または減少した寸法あるいはその両方を有した状態で、単一ゲート、二重ゲート、またはもっと多いゲートのMOSFETおよびfinFETを形成することができる。
【選択図】図16
Description
12 緩和SiGe層
14 薄い酸化物層
16 第1のポリシリコン層
18 フォトレジスト
20 第1の窒化物スペーサ
22 第2の窒化物スペーサ
24 SiGeブロック
26 歪みSi膜
28 ゲート酸化物
30 第2のポリシリコン層
102 フォトレジスト
104 ソース/ドレイン領域
106 ゲート領域
108 窒化物スペーサ
204 薄い酸化物層
205 ゲート酸化物
206 薄いポリシリコン・スペーサ
207 第1のゲート酸化物
208 第2のゲート酸化物
210 第3のポリシリコン層
Claims (22)
- 構造物を形成する方法であって、
基板上に緩和SiGeブロックを形成するステップと、
前記緩和SiGeブロックの側面に歪みSi膜を形成して歪みチャネル領域を形成するステップとを備える方法。 - 酸化物および高誘電率(k)材料のうちの少なくとも1つを備えるゲートを、前記歪みSi膜の少なくとも1つの側面に形成するステップをさらに備える、請求項1に記載の方法。
- 前記緩和SiGeブロックを除去して前記歪みSi膜の側面を露出させ、さらに酸化物および高k材料のうちの少なくとも1つを備えるゲートを前記歪みSi膜の前記露出された側面に形成するステップをさらに備える、請求項2に記載の方法。
- 前記歪みSi膜は、厚さが約50Å乃至200Åであり、さらに前記ゲートは、厚さが約9Å乃至20Åである、請求項2に記載の方法。
- 前記歪みSi膜が、選択的にエピタキシャル成長される、請求項1に記載の方法。
- 前記緩和SiGeブロックの上面に第1の窒化物スペーサを形成し、さらに前記緩和SiGeブロックの第2の側面および前記第1の窒化物スペーサの側面に第2の窒化物スペーサを形成するステップをさらに備える、請求項1に記載の方法。
- 前記歪みSi膜が、厚みよりも大きな高さを有する、請求項1に記載の方法。
- 前記SiGeブロックが、緩和SiGe層を基板上に形成しかつ前記緩和SiGeブロックを形成するように前記緩和SiGe層の部分をエッチング除去することで形成される、請求項1に記載の方法。
- 前記緩和SiGe層の上に薄い酸化物層を形成するステップと、
前記薄い酸化物層の上にポリシリコン層を形成するステップと、
前記ポリシリコン層の一部の上にフォトレジストを形成するステップと、
前記ポリシリコン層の露出部分および前記酸化物層の一部をエッチング除去して、前記緩和SiGe層の一部を露出させるステップと、
前記薄い酸化物層および前記ポリシリコン層の縁に近接した前記緩和SiGe層の上面部分に第1の窒化物スペーサを形成するステップとをさらに備える、請求項1に記載の方法。 - 前記緩和SiGe層の露出部分をエッチングして前記基板の一部を露出させるステップと、
前記緩和SiGe層および前記第1の窒化物スペーサの縁に近接した前記露出基板上に第2の窒化物スペーサを形成するステップと、
前記ポリシリコン層および前記薄い酸化物層の残存部分、および前記薄い酸化物層の下にある前記緩和SiGe層の一部をエッチング除去して、前記第1および第2の窒化物スペーサを有する緩和SiGeブロックを形成するステップとをさらに備える、請求項9に記載の方法。 - 酸化物基板上に緩和SiGeブロックを形成するステップと、
前記緩和SiGeブロックの第1の部分上に第1の窒化物スペーサを形成するステップと、
前記緩和SiGeブロックの別の部分および前記第1の窒化物スペーサの一部に近接した前記酸化物基板上に第2の窒化物スペーサを形成するステップと、
前記緩和SiGeブロックの露出された側面に歪みSi膜をエピタキシャルで形成するステップとを備える方法。 - 前記歪みSi膜が、厚みよりも大きな高さを有する、請求項11に記載の方法。
- 前記歪みSi膜が、前記酸化物基板上で垂直方向に配設される歪みSi膜のフィンを形成する、請求項12に記載の方法。
- 酸化物および高k材料のうちの少なくとも1つを備えるゲートを、前記SiGeブロックと反対側の前記歪みSi膜の第1の表面に形成するステップをさらに備える、請求項12に記載の方法。
- 前記歪みSi膜が、前記SiGeブロックの高さに実質的に等しい高さである、請求項11に記載の方法。
- 酸化物および高k材料のうち少なくとも1つを備えるゲートを、前記歪みSi膜の上面に形成するステップと、
前記第1および第2の窒化物スペーサを除去するステップと、
前記歪みSi膜の第2の側面を露出させるように前記SiGeブロックを除去するステップと、
酸化物および高k材料のうちの少なくとも1つを備えるゲートを、前記歪みSi膜の第2の側面に形成するステップとをさらに備える、請求項15に記載の方法。 - 非導電性基板上で垂直方向に配設される歪みSiのフィンを有するチャネルを備える半導体構造。
- 前記歪みSi膜は、厚さが約50Å乃至200Åである、請求項17に記載の構造。
- 前記歪みSi膜が緩和SiGeのブロックにエピタキシャル成長され、前記緩和SiGeが約0%から約100%までのGeの範囲を含む、請求項17に記載の構造。
- 前記歪みSi膜の第1の側面に形成された、酸化物および高k材料のうちの少なくとも1つを備えるゲートをさらに備える、請求項17に記載の構造。
- 前記歪みSi膜の上面および第2の側面に形成された、酸化物および高k材料のうちの少なくとも1つを備えるゲートをさらに備える、請求項20に記載の構造。
- 前記歪みSi膜が、低欠陥歪みSiフィンである、請求項20に記載の構造。
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US10/707,690 US7247912B2 (en) | 2004-01-05 | 2004-01-05 | Structures and methods for making strained MOSFETs |
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CN100342507C (zh) | 2007-10-10 |
US20070218620A1 (en) | 2007-09-20 |
CN1638067A (zh) | 2005-07-13 |
US7247912B2 (en) | 2007-07-24 |
JP4378293B2 (ja) | 2009-12-02 |
US7749842B2 (en) | 2010-07-06 |
US20050145954A1 (en) | 2005-07-07 |
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