JP4777987B2 - 異なる材料から成る構成素子を有する半導体トランジスタ及び形成方法 - Google Patents
異なる材料から成る構成素子を有する半導体トランジスタ及び形成方法 Download PDFInfo
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- JP4777987B2 JP4777987B2 JP2007529863A JP2007529863A JP4777987B2 JP 4777987 B2 JP4777987 B2 JP 4777987B2 JP 2007529863 A JP2007529863 A JP 2007529863A JP 2007529863 A JP2007529863 A JP 2007529863A JP 4777987 B2 JP4777987 B2 JP 4777987B2
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- 239000004065 semiconductor Substances 0.000 title claims description 236
- 239000000463 material Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 18
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 17
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 82
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 82
- 239000012212 insulator Substances 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 17
- 229910021332 silicide Inorganic materials 0.000 description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 14
- 238000002955 isolation Methods 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 13
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- -1 silicon ions Chemical class 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Description
当業者であれば、これらの図における構成要素が説明を簡単かつ明瞭にするために示され、そして必ずしも寸法通りには描かれていないことが分かるであろう。例えば、これらの図における幾つかの構成要素の寸法を他の構成要素に対して誇張して描いて本発明の実施形態を理解し易くしている。
ここで、誘電体分離領域13は所望の用途に基づいて適切な深さになるようなサイズに形成されることに注目されたい。従って、ここに記載する実施形態では、誘電体分離領域13の表面までの深さは、前に示した誘電体分離領域の表面までの深さよりも、多結晶酸化ハフニウム層19を除去した後に従来のウェットエッチングを使用することにより深くしている。多結晶酸化ハフニウム層19は図8を参照しながら上に記載したように除去される。ゲート49及び53は、一の形態ではポリシリコンであり、そして薄いゲート酸化膜層28の上に、ポリシリコンを従来の方法により堆積させ、そしてエッチングすることにより形成される。別の形態では、ゲート49及びゲート53は金属により形成され、そして別の形態ではゲート49及びゲート53は、金属層及びポリシリコン層の積層構造により形成される。ここで、半導体装置10は寸法通りには必ずしも描かれている訳ではないので、これらのゲートの高さ及び幅は大きく変わり得ることを理解されたい。ゲート49及びゲート53の各々の上には、絶縁体50及び絶縁体54がそれぞれ形成される。絶縁体50及び絶縁体54は一の実施形態では堆積法により形成されるが、ゲート49及びゲート53の材料組成によって変わる形でエピタキシャル成長させることができる。絶縁体50及び絶縁体54の高さは、ゲート積層構造が以下に議論するように所定の高さを有するように選択される。別の形態では、絶縁体50及び絶縁体54は使用せず、そしてゲート構造はゲート49及びゲート53のみを含む。薄いスペーサ52がゲート49、絶縁体50、及び薄いゲート酸化膜層28を取り囲んで被覆する。同様に、薄いスペーサ56がゲート53、絶縁体54、及び薄いゲート酸化薄膜層28を取り囲んで被覆する。一の形態では、薄いスペーサ52、及び薄いスペーサ56は窒化膜スペーサである。
Claims (2)
- 半導体素子の製造方法であって、
半導体領域を有する半導体基板を設ける工程と、
前記半導体領域の上方に、前記半導体領域とは異なる材料からなり、かつ、シリコン、ゲルマニウム、シリコンゲルマニウム、炭化シリコン、炭素含有シリコン、及びこれらの材料をin-situドープした構成の材料のうちから選択された材料からなる半導体層を形成する工程と、
第1の側面及び第2の側面を有するゲート電極を前記半導体領域及び前記半導体層の上方に形成する工程と、
前記ゲート電極を用いて前記半導体層及び前記半導体領域をエッチングして、前記半導体領域を露出させる工程と、
2元金属酸化物または3元金属酸化物からなる第1のコンフォーマル層を前記ゲート電極を囲む部分、及び、前記ゲート電極の第1の側面側及び第2の側面側に隣接する前記半導体領域上の部分に形成する工程と、
前記ゲート電極の前記第1の側面に当接する第1の側面方向から、第1の傾斜イオン注入を前記ゲート電極の前記第1の側面に向かって行うことによって、前記第1のコンフォーマル層の内、前記ゲート電極の前記第1の側面に沿った部分、前記ゲート電極の上方の部分、及び前記ゲート電極の前記第1の側面から前記第2の側面とは反対側の方向に離隔して延びる部分をアモルファス化する工程と、
前記第1のコンフォーマル層の前記アモルファス化されている部分を除去することによって、前記ゲート電極の前記第1の側面側の前記半導体領域の第1の部分を露出する工程と、
炭化シリコンからなるドレインを前記ゲート電極に隣接するように前記半導体領域の前記第1の部分からのエピタキシャル成長によって形成する工程と、
前記ドレインをエピタキシャル成長したのち、2元金属酸化物又は3元金属酸化物からなる前記第1のコンフォーマル層の内、前記ゲート電極の前記第1の側面とは反対側の前記ゲート電極の前記第2の側面に沿った部分、前記ゲート電極の前記第2の側面から前記第1の側面とは反対側の方向に離隔して延びる部分を除去する工程と、
2元金属酸化物又は3元金属酸化物からなる第2のコンフォーマル層を前記ゲート電極を囲む部分、前記ゲート電極の前記第2の側面側に隣接する前記半導体領域上の部分、及び、前記ドレインの上方の部分に形成する工程と、
前記ゲート電極の前記第2の側面に当接する第2側面方向から、第2の傾斜イオン注入を前記ゲート電極の前記第2の側面に向かって行うことによって、前記第2のコンフォーマル層の内、前記ゲート電極の前記第2側面に沿った部分、前記ゲート電極の上方の部分、及び前記ゲート電極の前記第2側面から前記第1の側面とは反対側の方向に離隔して延びる部分をアモルファス化する工程と、
前記第2のコンフォーマル層の内、アモルファス化されている部分を除去することによって、前記ゲート電極の前記第2の側面側の前記半導体領域の第2の部分を露出する工程と、
シリコンゲルマニウムからなるソースを、チャネルを前記半導体層に形成すべく、前記ゲート電極に隣接するように、前記半導体領域の前記第2の部分からのエピタキシャル成長により形成する工程とを備え、 前記シリコンゲルマニウムからなるソースは、前記ゲート電極の下方に形成されたチャネルにストレスを印加するチャネルストレッサとして機能している、
半導体素子の製造方法。 - 半導体領域を内部に備えた半導体基板と、
前記半導体領域の上方に設けられ、前記半導体領域とは異なる材料からなり、かつ、シリコン、ゲルマニウム、シリコンゲルマニウム、炭化シリコン、炭素含有シリコン、及びこれらの材料をin-situドープした構成の材料のうちから選択された材料からなる半導体層と、
前記半導体領域及び前記半導体層の上方にあるゲート電極と、
前記半導体領域と前記半導体層は前記ゲート電極を用いて前記半導体領域が露出するまでエッチングされ、前記半導体層と前記半導体領域の一部とに設けられたリセスソース及びリセスドレインと、
前記半導体層の前記ゲート電極の下方に形成されるチャネルと、
前記半導体領域の上の前記リセスドレインに設けられた炭化シリコンからなるドレインと、
前記半導体領域の上の前記リセスソースに設けられたシリコンゲルマニウムからなるソースとを備え、
前記シリコンゲルマニウムからなるソースは、前記チャネルにストレスを印加するチャネルストレッサとして機能している、半導体素子。
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US10/924,632 US6979622B1 (en) | 2004-08-24 | 2004-08-24 | Semiconductor transistor having structural elements of differing materials and method of formation |
US10/924,632 | 2004-08-24 | ||
PCT/US2005/026063 WO2006023197A2 (en) | 2004-08-24 | 2005-07-22 | Semiconductor transistor having structural elements of differing materials and method of formation |
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EP1784859A2 (en) | 2007-05-16 |
WO2006023197A3 (en) | 2006-04-27 |
CN1993815A (zh) | 2007-07-04 |
JP2008511171A (ja) | 2008-04-10 |
TW200620483A (en) | 2006-06-16 |
US7230264B2 (en) | 2007-06-12 |
US20060076579A1 (en) | 2006-04-13 |
TWI359464B (en) | 2012-03-01 |
KR20070041757A (ko) | 2007-04-19 |
US6979622B1 (en) | 2005-12-27 |
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WO2006023197A2 (en) | 2006-03-02 |
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