CN1615527A - 半导体集成电路 - Google Patents
半导体集成电路 Download PDFInfo
- Publication number
- CN1615527A CN1615527A CNA028273486A CN02827348A CN1615527A CN 1615527 A CN1615527 A CN 1615527A CN A028273486 A CNA028273486 A CN A028273486A CN 02827348 A CN02827348 A CN 02827348A CN 1615527 A CN1615527 A CN 1615527A
- Authority
- CN
- China
- Prior art keywords
- mos transistor
- line
- source
- drain electrode
- storage unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000003860 storage Methods 0.000 claims description 142
- 108010032595 Antibody Binding Sites Proteins 0.000 claims description 89
- 230000005611 electricity Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 description 12
- 230000000295 complement effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 101100386719 Caenorhabditis elegans dcs-1 gene Proteins 0.000 description 1
- 101100524644 Toxoplasma gondii ROM4 gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/001466 WO2003071553A1 (fr) | 2002-02-20 | 2002-02-20 | Circuit integre a semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1615527A true CN1615527A (zh) | 2005-05-11 |
CN100423131C CN100423131C (zh) | 2008-10-01 |
Family
ID=27742288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028273486A Expired - Fee Related CN100423131C (zh) | 2002-02-20 | 2002-02-20 | 半导体集成电路 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7116571B2 (zh) |
EP (1) | EP1477990A4 (zh) |
JP (1) | JP4072127B2 (zh) |
KR (1) | KR20040103942A (zh) |
CN (1) | CN100423131C (zh) |
TW (1) | TW586229B (zh) |
WO (1) | WO2003071553A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102637688A (zh) * | 2011-02-08 | 2012-08-15 | 罗姆股份有限公司 | 半导体记忆装置 |
CN109417033A (zh) * | 2016-06-28 | 2019-03-01 | 株式会社索思未来 | 半导体装置以及半导体集成电路 |
CN110322917A (zh) * | 2018-03-28 | 2019-10-11 | 台湾积体电路制造股份有限公司 | 位线逻辑电路、存储器电路及其位线偏置方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004026128A1 (de) * | 2004-05-28 | 2005-12-29 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit mindestens einer Wortleitung und mit einer Vielzahl von Speicherzellen |
DE102004042105A1 (de) | 2004-08-30 | 2006-03-09 | Infineon Technologies Ag | ROM-Speicher |
JP4568084B2 (ja) * | 2004-10-28 | 2010-10-27 | 株式会社東芝 | 半導体記憶装置 |
US7920403B2 (en) * | 2005-07-27 | 2011-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | ROM cell array structure |
JP4804133B2 (ja) * | 2005-12-06 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US7855924B2 (en) * | 2006-05-19 | 2010-12-21 | Arm Limited | Data processing memory circuit having pull-down circuit with on/off configuration |
JP4885743B2 (ja) * | 2006-07-28 | 2012-02-29 | ラピスセミコンダクタ株式会社 | 不揮発性半導体記憶装置 |
JP5134845B2 (ja) * | 2007-03-23 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7869250B2 (en) * | 2007-06-11 | 2011-01-11 | Renesas Electronics Corporation | ROM semiconductor integrated circuit device having a plurality of common source lines |
JP2009020990A (ja) * | 2007-06-11 | 2009-01-29 | Renesas Technology Corp | 半導体集積回路装置 |
KR100937938B1 (ko) * | 2007-09-04 | 2010-01-21 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
JP5839474B2 (ja) * | 2011-03-24 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
US10032509B2 (en) * | 2015-03-30 | 2018-07-24 | Toshiba Memory Corporation | Semiconductor memory device including variable resistance element |
US10497702B2 (en) * | 2017-04-14 | 2019-12-03 | Qualcomm Incorporated | Metal-oxide semiconductor (MOS) standard cells employing electrically coupled source regions and supply rails to relax source-drain tip-to-tip spacing between adjacent MOS standard cells |
US10431291B1 (en) * | 2018-08-08 | 2019-10-01 | Micron Technology, Inc. | Systems and methods for dynamic random access memory (DRAM) cell voltage boosting |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60159970A (ja) * | 1984-01-30 | 1985-08-21 | Hitachi Ltd | 情報蓄積検索方式 |
JPH0750556B2 (ja) * | 1985-06-26 | 1995-05-31 | 日本電気株式会社 | 半導体記憶装置 |
US4912674A (en) * | 1986-01-16 | 1990-03-27 | Hitachi, Ltd. | Read-only memory |
JPS62249478A (ja) | 1986-04-23 | 1987-10-30 | Hitachi Vlsi Eng Corp | 半導体記憶装置 |
US4788663A (en) * | 1987-04-24 | 1988-11-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with a lightly-doped drain structure |
JP2595266B2 (ja) | 1987-10-14 | 1997-04-02 | 株式会社日立製作所 | Rom回路 |
JPH0214495A (ja) | 1988-06-30 | 1990-01-18 | Fujitsu Ltd | リード・オンリ・メモリ |
US5237534A (en) * | 1989-04-27 | 1993-08-17 | Kabushiki Kaisha Toshiba | Data sense circuit for a semiconductor nonvolatile memory device |
KR100204721B1 (ko) * | 1989-08-18 | 1999-06-15 | 가나이 쓰도무 | 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치 |
US5291045A (en) * | 1991-03-29 | 1994-03-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device using a differential cell in a memory cell |
JP3227754B2 (ja) | 1992-01-17 | 2001-11-12 | ヤマハ株式会社 | 半導体記憶装置とその製法 |
JPH0689591A (ja) | 1992-09-09 | 1994-03-29 | Nippon Telegr & Teleph Corp <Ntt> | 読み出し専用メモリ |
JPH0778489A (ja) | 1993-09-08 | 1995-03-20 | Nec Corp | 記憶装置 |
JP2751892B2 (ja) | 1995-10-11 | 1998-05-18 | 日本電気株式会社 | 半導体記憶装置 |
JP3380107B2 (ja) | 1996-03-22 | 2003-02-24 | シャープ株式会社 | 半導体記憶装置 |
EP0810606B1 (en) * | 1996-05-13 | 2003-11-12 | STMicroelectronics S.r.l. | Column multiplexer |
JPH1064292A (ja) | 1996-08-26 | 1998-03-06 | Fujitsu Ltd | 半導体記憶装置 |
KR100240418B1 (ko) | 1996-12-31 | 2000-03-02 | 윤종용 | 반도체 독출 전용 메모리 및 그의 독출 방법 |
JPH10320993A (ja) | 1997-05-16 | 1998-12-04 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JPH1116384A (ja) | 1997-06-26 | 1999-01-22 | Fujitsu Ltd | 半導体集積回路 |
US6028783A (en) * | 1997-11-14 | 2000-02-22 | Ramtron International Corporation | Memory cell configuration for a 1T/1C ferroelectric memory |
JP2000012707A (ja) | 1998-06-25 | 2000-01-14 | Seiko Epson Corp | 半導体記憶装置 |
KR100282045B1 (ko) * | 1998-08-07 | 2001-03-02 | 윤종용 | 강유전체 커패시터를 구비한 불 휘발성 다이나믹 랜덤 엑세스메모리 |
US6147893A (en) * | 1999-01-27 | 2000-11-14 | Vlsi Technology, Inc. | Programmable read only memory with high speed differential sensing at low operating voltage |
JP2000276891A (ja) | 1999-03-26 | 2000-10-06 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
US6166938A (en) * | 1999-05-21 | 2000-12-26 | Sandisk Corporation | Data encoding for content addressable memories |
KR20010028854A (ko) * | 1999-09-27 | 2001-04-06 | 윤종용 | 회전형 인버터 |
US6310809B1 (en) * | 2000-08-25 | 2001-10-30 | Micron Technology, Inc. | Adjustable pre-charge in a memory |
-
2002
- 2002-02-20 JP JP2003570363A patent/JP4072127B2/ja not_active Expired - Lifetime
- 2002-02-20 WO PCT/JP2002/001466 patent/WO2003071553A1/ja not_active Application Discontinuation
- 2002-02-20 EP EP02700624A patent/EP1477990A4/en not_active Withdrawn
- 2002-02-20 CN CNB028273486A patent/CN100423131C/zh not_active Expired - Fee Related
- 2002-02-20 KR KR10-2004-7012888A patent/KR20040103942A/ko not_active Application Discontinuation
- 2002-02-20 US US10/505,216 patent/US7116571B2/en not_active Expired - Lifetime
- 2002-03-15 TW TW091104983A patent/TW586229B/zh not_active IP Right Cessation
-
2006
- 2006-10-03 US US11/541,605 patent/US7324397B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102637688A (zh) * | 2011-02-08 | 2012-08-15 | 罗姆股份有限公司 | 半导体记忆装置 |
CN102637688B (zh) * | 2011-02-08 | 2016-08-31 | 罗姆股份有限公司 | 半导体记忆装置 |
US9741397B2 (en) | 2011-02-08 | 2017-08-22 | Rohm Co., Ltd. | Semiconductor memory device |
CN109417033A (zh) * | 2016-06-28 | 2019-03-01 | 株式会社索思未来 | 半导体装置以及半导体集成电路 |
CN109417033B (zh) * | 2016-06-28 | 2022-03-18 | 株式会社索思未来 | 半导体装置以及半导体集成电路 |
CN110322917A (zh) * | 2018-03-28 | 2019-10-11 | 台湾积体电路制造股份有限公司 | 位线逻辑电路、存储器电路及其位线偏置方法 |
Also Published As
Publication number | Publication date |
---|---|
US7116571B2 (en) | 2006-10-03 |
US20050082572A1 (en) | 2005-04-21 |
KR20040103942A (ko) | 2004-12-09 |
WO2003071553A1 (fr) | 2003-08-28 |
JPWO2003071553A1 (ja) | 2005-06-16 |
JP4072127B2 (ja) | 2008-04-09 |
EP1477990A4 (en) | 2005-10-12 |
US20070086229A1 (en) | 2007-04-19 |
TW586229B (en) | 2004-05-01 |
EP1477990A1 (en) | 2004-11-17 |
CN100423131C (zh) | 2008-10-01 |
US7324397B2 (en) | 2008-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC CORP. Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100812 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: NEC CORP. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Co-patentee after: HITACHI ULSI SYSTEMS Co.,Ltd. Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Co-patentee before: HITACHI ULSI SYSTEMS Co.,Ltd. Patentee before: NEC ELECTRONICS Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100812 Address after: Kanagawa, Japan Co-patentee after: HITACHI ULSI SYSTEMS Co.,Ltd. Patentee after: NEC ELECTRONICS Corp. Address before: Tokyo, Japan Co-patentee before: HITACHI ULSI SYSTEMS Co.,Ltd. Patentee before: Renesas Technology Corp. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160927 Address after: Tokyo, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corp. Patentee before: HITACHI ULSI SYSTEMS Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081001 Termination date: 20190220 |