CN1601711A - 制造半导体器件的方法 - Google Patents
制造半导体器件的方法 Download PDFInfo
- Publication number
- CN1601711A CN1601711A CNA2004100117280A CN200410011728A CN1601711A CN 1601711 A CN1601711 A CN 1601711A CN A2004100117280 A CNA2004100117280 A CN A2004100117280A CN 200410011728 A CN200410011728 A CN 200410011728A CN 1601711 A CN1601711 A CN 1601711A
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- Prior art keywords
- wiring substrate
- multilayer wiring
- mould
- substrate
- molding die
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003334858A JP4094515B2 (ja) | 2003-09-26 | 2003-09-26 | 半導体装置の製造方法 |
JP334858/2003 | 2003-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1601711A true CN1601711A (zh) | 2005-03-30 |
CN100437954C CN100437954C (zh) | 2008-11-26 |
Family
ID=34373183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100117280A Active CN100437954C (zh) | 2003-09-26 | 2004-09-24 | 制造半导体器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7288440B2 (zh) |
JP (1) | JP4094515B2 (zh) |
KR (1) | KR20050030865A (zh) |
CN (1) | CN100437954C (zh) |
TW (1) | TWI346986B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101329217B (zh) * | 2007-06-19 | 2010-12-29 | 株式会社电装 | 用于检测树脂泄漏的装置和方法 |
CN101229673B (zh) * | 2007-01-22 | 2012-02-08 | 三星电子株式会社 | 注射成型装置 |
CN102756454A (zh) * | 2011-04-27 | 2012-10-31 | 松下电器产业株式会社 | 树脂密封成形品的制造方法 |
CN105374695A (zh) * | 2011-01-12 | 2016-03-02 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
CN107263827A (zh) * | 2016-03-30 | 2017-10-20 | 第精工株式会社 | 树脂密封装置和树脂密封装置的异常检测方法 |
CN109727945A (zh) * | 2017-10-27 | 2019-05-07 | 日月光半导体制造股份有限公司 | 衬底结构及半导体封装元件的制造方法 |
TWI811101B (zh) * | 2021-12-06 | 2023-08-01 | 日商山田尖端科技股份有限公司 | 樹脂密封裝置及密封模具 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243435A (ja) * | 2002-02-14 | 2003-08-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2004134591A (ja) * | 2002-10-10 | 2004-04-30 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
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EP2890833A4 (en) | 2012-08-28 | 2016-06-15 | Hatch Pty Ltd | IMPROVED CURRENT MEASUREMENT AND MANAGEMENT SYSTEM FOR ELECTROLYTE PLANTS |
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Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970002295B1 (ko) * | 1993-02-23 | 1997-02-27 | 미쯔비시 덴끼 가부시끼가이샤 | 성형방법 |
DE19519901C2 (de) * | 1995-05-31 | 1998-06-18 | Richard Herbst | Verfahren zum taktweisen Spritzgießen von Gegenständen aus Kunststoff und Halbzeug zur Verwendung bei diesem Verfahren |
JP2991126B2 (ja) | 1996-09-12 | 1999-12-20 | 日本電気株式会社 | 樹脂封止型半導体装置の製造装置及びその製造方法 |
JP3116913B2 (ja) | 1998-07-31 | 2000-12-11 | 日本電気株式会社 | 半導体チップ樹脂封止用金型及びこれを用いた半導体チップ樹脂封止方法 |
JP3510554B2 (ja) | 2000-02-10 | 2004-03-29 | 山形日本電気株式会社 | 樹脂モールド方法、モールド成形用金型及び配線基材 |
JP3394516B2 (ja) * | 2000-10-06 | 2003-04-07 | エヌイーシーセミコンダクターズ九州株式会社 | 樹脂封止金型 |
CA2350747C (en) * | 2001-06-15 | 2005-08-16 | Ibm Canada Limited-Ibm Canada Limitee | Improved transfer molding of integrated circuit packages |
JP3560585B2 (ja) * | 2001-12-14 | 2004-09-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP4268389B2 (ja) * | 2002-09-06 | 2009-05-27 | Towa株式会社 | 電子部品の樹脂封止成形方法及び装置 |
DE102005043928B4 (de) * | 2004-09-16 | 2011-08-18 | Sharp Kk | Optisches Halbleiterbauteil und Verfahren zu dessen Herstellung |
JP4628125B2 (ja) * | 2005-02-09 | 2011-02-09 | 日本プラスト株式会社 | 樹脂漏れ防止構造 |
US20060223227A1 (en) * | 2005-04-04 | 2006-10-05 | Tessera, Inc. | Molding method for foldover package |
-
2003
- 2003-09-26 JP JP2003334858A patent/JP4094515B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-06 TW TW093126872A patent/TWI346986B/zh not_active IP Right Cessation
- 2004-09-23 US US10/947,261 patent/US7288440B2/en active Active
- 2004-09-24 CN CNB2004100117280A patent/CN100437954C/zh active Active
- 2004-09-24 KR KR1020040076740A patent/KR20050030865A/ko not_active Application Discontinuation
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US20050070047A1 (en) | 2005-03-31 |
JP2005101407A (ja) | 2005-04-14 |
US7445969B2 (en) | 2008-11-04 |
CN100437954C (zh) | 2008-11-26 |
US20080057626A1 (en) | 2008-03-06 |
JP4094515B2 (ja) | 2008-06-04 |
TW200512850A (en) | 2005-04-01 |
KR20050030865A (ko) | 2005-03-31 |
US7288440B2 (en) | 2007-10-30 |
TWI346986B (en) | 2011-08-11 |
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