CN1577827A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1577827A
CN1577827A CNA2004100619380A CN200410061938A CN1577827A CN 1577827 A CN1577827 A CN 1577827A CN A2004100619380 A CNA2004100619380 A CN A2004100619380A CN 200410061938 A CN200410061938 A CN 200410061938A CN 1577827 A CN1577827 A CN 1577827A
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Prior art keywords
semiconductor device
installed surface
electrode
shape
boundary portion
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Granted
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CNA2004100619380A
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CN100440499C (zh
Inventor
龟山工次郎
三田清志
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Publication of CN1577827A publication Critical patent/CN1577827A/zh
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Publication of CN100440499C publication Critical patent/CN100440499C/zh
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Abstract

一种半导体器件及其制造方法，可提高对熔接在外部端子上的接合材料的目视确认性。该半导体器件将半导体元件和与所述半导体元件电连接的电极通过具有绝缘性的密封材料进行密封，并使所述电极在介由接合材料与外部的安装基板接合的安装面的周围露出，所述电极在所述安装面通过所述接合材料接合于所述安装基板的状态下，从包围所述安装面的侧面一侧呈现可目视所述接合材料的形状。

Description

半导体器件及其制造方法
技术领域
本发明涉及提高对熔接在外部端子上的接合材料的目视确认性的半导体器件及其制造方法。
背景技术
近年来，随着对半导体器件的小型化、薄型化的要求，提出VQFN(Verythin Quad Flat Nonleaded Package)和VSON(Very Thin Small OutlineNonleaded Package)等从封装底面(安装面)露出外部端子的无引线型的半导体器件(参照专利文献1)。
图14是表示VQFN型的现有的半导体器件100的安装面的立体图。如该图所示，在现有的半导体器件100的安装面的边缘部中，将多个外部端子(键合焊盘)106按规定的焊盘间距露出。
图15是表示现有的半导体器件100的对印刷布线板200的安装状态的剖面图。在印刷布线板200的上面部中，为了防止焊料(Solder)等接合材料300被熔接在导电图形以外，通过焊料抗蚀剂(Solder Resist)201将其覆盖。此外，没有被焊料抗蚀剂201覆盖的部位成为作为导电图形的岛(land)202。
这里，现有的半导体器件100的外部端子106介由接合材料300与印刷布线板的岛202接合。再有，根据细间距(窄焊盘间距)的要求，外部端子106的间隔(焊盘间距)被窄小化，熔接在相邻的各个外部端子106上的接合材料300重合，容易产生所谓的焊料凸缘现象。为了防止产生这种焊料凸缘，尽力抑制熔接在外部端子106上的接合材料300的量。
专利文献1
特开2003-31753号公报
可是，在半导体器件的对印刷布线板的安装后，在外部端子106和岛202间形成的接合材料300的圆角(形状)用配有规定的检测装置的CCD摄像机等来监视显示。然后，根据监视显示的摄像，通过目视确认判定介由接合材料300的外部端子106和岛202的接合状态是否良好。
但是，在VQFN等无引线型的半导体器件中，外部端子被露出安装面(封装背面)来配置，此外，为了细间距化而尽力抑制接合材料300的量，所以不易目视确认接合材料300的形状，难以判定外部端子106和岛202的接合状态是否良好。
发明内容
本发明是鉴于上述情况的发明，其目的在于提供提高对熔接在外部端子上的接合材料的目视确认性的半导体器件及其制造方法。
主要用于解决上述课题的本发明的半导体器件，将半导体元件和与所述半导体元件电连接的电极通过具有绝缘性的密封材料进行密封，并使所述电极在介由接合材料与外部的安装基板接合的安装面的周围露出，其中：所述电极在所述安装面通过所述接合材料接合于所述安装基板的状态下，从包围所述安装面的侧面一侧呈现可目视所述接合材料的形状。在介由接合材料将该半导体器件与安装基板接合的情况下，可从该半导体器件的侧面目视确认接合材料的状态，可容易地通过目视确认来判定有关接合材料的状态是否良好。
此外，作为本发明的半导体器件的主要的制造方法，该方法包括：密封工序，在通过接合材料与安装基板接合的安装面的周围露出电极的状态下，通过具有绝缘性的密封材料密封以导电箔划分的各划分区域中电连接的该电极和半导体元件；切削工序，对于所述安装面侧的所述各划分区域的边界部，通过将第一键合焊盘在垂直于所述安装面的方向上移动规定长度并进行切削，从而除去所述电极的靠近所述边界部的边缘部；以及分离工序，在除去所述边缘部后，分离所述各划分区域。
有关本发明的其他特征，通过附图和说明书的论述会更清楚。
附图说明
图1是表示本发明一实施方式的半导体器件的安装状态的剖面图。
图2是表示本发明一实施方式的半导体器件的安装面的立体图。
图3是表示本发明一实施方式的半导体器件的安装面的立体图。
图4是说明本发明一实施方式的半导体器件的制造工序的流程图。
图5是说明本发明一实施方式的半导体器件的制造工序的图。
图6是说明本发明一实施方式的半导体器件的制造工序的图。
图7是说明本发明一实施方式的半导体器件的制造工序的图。
图8是说明本发明一实施方式的切削刀片的形状的图。
图9是说明本发明一实施方式的半导体器件的制造工序的图。
图10是说明本发明一实施方式的半导体器件的制造工序的图。
图11是说明本发明一实施方式的半导体器件的制造工序的图。
图12是说明本发明一实施方式的半导体器件的制造工序的图。
图13是说明本发明一实施方式的半导体器件的制造工序的图。
图14是表示现有的半导体器件的安装面的立体图。
图15是表示现有的半导体器件的安装面的剖面图。
具体实施方式
以下，根据附图来具体地说明本发明的实施方式。
<半导体器件的结构>
图1是表示本发明的半导体器件100的对印刷布线板(“安装基板”)200的安装状态的剖面图。再有，半导体器件100与VQFN和VSON等的无引线型同样，在介由接合材料300与印刷布线板200接合的侧的安装面(底面)中，呈现使作为外部端子106的键合焊盘(“电极”)104露出的形状。
在用铜等构成的管芯焊盘101上，介由Ag(银)膏、焊料、粘结剂等管芯键合用的接合材料102来固定(管芯键合)半导体元件103。在半导体元件103的表面上形成电极焊盘(未图示)，该电极焊盘和铜等构成的键合焊盘104介由金属细线105而电连接(引线键合)。再有，键合焊盘104采用在该半导体器件100的上面侧具有突起部的形状，以便提高与密封材料107的紧贴性，但不用说，也可以形成除去了该突起部的形状。
在管芯焊盘101、半导体元件103和键合焊盘104分别电连接的状态下，通过具有绝缘性的密封材料107进行密封而形成密封体110。再有，作为密封材料107，可采用环氧树脂等热固化性树脂(转移模法的情况)、聚酰亚胺树脂、对聚苯硫等可热塑性树脂(注射模法的情况)等。
对于密封后的管芯焊盘101，可使其底面不露出到密封体110的安装面，也可以露出。在不露出管芯焊盘101的底面时，能可靠地保护管芯焊盘101和半导体元件103的绝缘性。在露出管芯焊盘101的底面时，可以使没有密封该底面部分的该半导体器件100的厚度薄。此外，还可以将该半导体器件100产生的热从该管芯焊盘101的底面放出。
对于密封后的键合焊盘104，使其底面露出到密封体110的安装面。这里，露出密封体110的安装面的键合焊盘104的部位介由接合材料300形成用于将该半导体器件100接合(安装)在印刷布线板200上的外部端子106。
在外部端子106上，形成焊料镀敷和金属镀敷(Ni(镍)、Ag(银)等)的镀敷层108。再有，为了提高接合材料300的形状容积，作为外部端子106，也可以对于面向密封体110的侧面侧的键合焊盘104的侧面露出。
印刷布线板200是用于安装该半导体器件100的基板，与该半导体器件100的安装面对置的上表面被焊料抗蚀剂201覆盖。再有，焊料抗蚀剂201是用于防止焊料等接合材料300熔接在印刷布线板200上的导电图形以外的覆盖膜。另一方面，没有被该焊料抗蚀剂覆盖的部位成为作为导电图形的岛202。即，在将半导体器件100安装在印刷布线板200上时，在外部端子106和岛202之间接合材料300为熔接的状态。再有，半导体器件100的外部端子106以外的岛(未图示)也可以介由接合材料300与印刷布线板200的岛202接合。
但是，在本发明的半导体器件100中，在其安装面介由接合材料300而接合在印刷布线板200上的状态中，呈现从包围安装面的侧面一侧可目视确认接合材料300的形状。通过呈现这样的形状，在安装了半导体器件100的情况下，外部端子106和岛202间形成的接合材料300的形状可从半导体器件100的侧面侧目视确认，在检查工序中可容易地判定接合材料300的状态是否良好。
再有，图2是表示本发明的半导体器件100的一实施方式的从安装面侧观察的立体图。如图所示，作为半导体器件100的形状，也可以将包含了安装面的外部端子106的靠近侧面的边缘部除去，形成面向安装面直线状倾斜的截断面120。通过呈现这样的形状，在将半导体器件100安装在印刷布线板200上时，可从沿该倾斜的角度方向的半导体器件100的斜上方容易地目视确认接合材料300的状态。
此外，图3是表示本发明的半导体器件100的另一实施方式的从安装面侧观察的立体图。如图所示，作为半导体器件100的形状，也可以将包含了安装面的外部端子106的靠近侧面的边缘部除去，形成面向安装面弯曲状倾斜的截断面130。通过呈现这样的形状，与具有直线状倾斜的截断面120的形状同样，在将半导体器件100安装在印刷布线板200上时，可从半导体器件100的斜上方容易地目视确认接合材料300的状态。此外，在与具有直线状倾斜的截断面120的形状进行比较的情况下，由于弯曲状倾斜的部分可熔接更多的接合材料300，所以可以提高接合强度。
<半导体器件的制造方法>
下面适当参照图5至图12，同时根据图4的流程图来说明本发明的半导体器件100的制造工序。
管芯键合～密封
首先，准备以Cu(铜)、Al(铝)或Fe-Ni的合金等作为成分的板状的导电箔700。然后，在该导电箔700上形成抗蚀剂图形后，通过以该抗蚀剂图形作为掩模来实施腐蚀，在该导电箔700中划分的各划分区域上形成期望的管芯焊盘101及键合焊盘104。再有，键合焊盘104以在导电箔700的各划分区域的周围配置规定数来形成。此外，将相邻的各划分区域的相互的键合焊盘104按连结的状态形成。
接着，将从硅晶片等中预先切割的半导体元件103介由接合材料102固定(管芯键合)在形成于导电箔700的各划分区域中的管芯焊盘101上(S400)。然后，在通过固化工序使接合材料102热固化后(S401)，将半导体元件103的电极(未图示)和形成在导电箔700的各划分区域周围的键合焊盘(“电极”)106介由金属细线105进行电连接(引线键合)(S402)。
然后，在导电箔700的各划分区域中的安装面(介由接合材料300与印刷布线板200进行接合一侧的面)的周围将键合焊盘104作为外部端子106露出的状态下，对于该导电箔700实施集中的密封(S403)。其结果，在导电箔700的各安装面的周围，形成除了键合焊盘104露出以外被密封材料107密封的密封体110。
可是，如果在导电箔700的安装面侧上粘结树脂片800的状态下进行密封，则可通过该树脂片800来防止键合焊盘104的安装面侧被密封材料107密封。而且，在密封工序(S403)时，通过介由树脂片800而加压密封材料107，从而外部端子106容易露出密封体110的安装面，所以最好是在密封工序(S403)之前将树脂片800预先粘结在导电箔700上(参照图5)。再有，在采用树脂片800的情况下，在密封工序(S403)后，需要从导电箔700中除去树脂片800的工序(S404)。
半切割～检查工序
以下，说明本发明的半导体器件100的制造工序中从特征性的半切割工序至检查工序的工序。
首先，如图6所示，对于与密封后的导电箔(以下，称为单元)700中的安装面正相反的面(上面)，粘贴以聚烯等作为材质的切割片600。然后，为了使切割装置(未图示)配有的后述的切削刀片(“第一刀片”)400的刀尖和单元700的安装面对置，将单元700通过真空吸附固定(粘结)在该切割装置配有的工作台500上。再有，此时，通过切割片600容易保持单元700的固定状态。
接着，对于切削刀片400，在其定位于单元700的安装面中的一切削线(各划分区域的边界部)的上方后，相对于该安装面向垂直的切削方向移动规定长度。在这样进行切削刀片400的定位后，由主轴电机(未图示)等旋转驱动切削刀片400，同时通过将固定在工作台500上的单元700沿对应的一切削线方向移动，实施半切割工序(S405)(参照图7)。
这里，切削刀片400是用于切削包含单元700的安装面侧的边界部中的外部端子106的半导体器件100的靠近侧面的边缘部的刀片，以便形成用于从半导体器件100的侧面目视确认熔接在外部端子106和印刷布线板200的岛202之间的接合材料300的截断面(120或130等)。作为这样的切削刀片400，可以采用具有V字状的刀尖(参照图8(A))的刀片400a、具有U字状的刀尖(参照图8(B))的刀片400b等。
再有，在采用具有V字状刀尖的切削刀片400a的情况下，单元700的安装面侧的边界部的形状为V凹槽，其结果，包含外部端子106的半导体器件100的靠近侧面的边缘部被切削的形状面向安装面直线状倾斜。另一方面，在采用具有U字状刀尖的切削刀片400b的情况下，单元700的安装面侧的边界部的形状为U凹槽，其结果，包含外部端子106的半导体器件100的靠近侧面的边缘部被切削的形状面向安装面弯曲状倾斜。
作为有关半切割工序(S405)的详细的实施方式，使用图9所示的半导体器件100的剖面图和图10所示的半导体器件100的立体图来说明。再有，作为切削刀片400，假设采用具有V字状刀尖的切削刀片400a。此外，图9和图10所示的半导体器件100a和100b表示介由单元700的边界部相邻配置的半导体器件。而且，假设在单元700的安装面侧的边界部中，半导体器件100a及100b的相互的外部端子106a和106b在连结的状态下露出(参照图6)。
首先，将固定了单元700的工作台500通过切割装置配有的旋转机构(未图示)进行旋转驱动，使垂直于切削刀片400a的旋转轴的方向与作为半导体器件100a和100b的边界部的切削线的方向(图10所示的Y方向)一致。然后，为了将切削刀片400a定位在半导体器件100a和100b的边界部(切削线)上方的初始位置，在与切削刀片400a的旋转轴平行的方向(图10所示的X方向)上移动调整切削刀片400a后，通过将切削刀片400a向垂直于安装面的切削方向(图10所示的Z方向)移动规定长度，完成切削刀片400a的定位。
接着，旋转驱动切削刀片400a，通过将切削刀片400a向作为半导体器件100a和100b的边界部的切削线的方向(图10所示的Y方向)移动，在半导体器件100a和100b的边界部中形成V凹槽状的沟。再有，此时，在位于半导体器件100a和100b的边界部的外部端子106a和106b中，半导体器件100a和100b的靠近侧面的边缘部140a及140b被切削。
然后，通过对单元700的安装面中的所有切削线实施所述工序，完成半切割工序。
再有，根据后述的电解镀敷法的镀敷层形成工序(S406)，在将切削刀片400a向切削方向(图10所示的Z方向)移动的情况下，也可以移动至外部端子106a和106b的厚度方向(图10所示的W方向)的一半。由此，维持外部端子106a和106b不完全分离的电连接状态。
在实施半切割工序(S405)，而且除去切割片600后，如图11所示，对于包含直线状倾斜的截断面120a和120b的外部端子106a和106b，根据电解镀敷法来形成镀敷层108a和108b(S406)。再有，电解镀敷法在铜镀敷淋浴等的电解溶液中设置阳极和阴极电极。然后，通过在将被镀敷物作为阴极电极配置并在电极间施加电压，在被镀敷物的表面上析出电子而形成镀敷层。
这里，如上述那样，通过半切割工序(S405)，维持外部端子106a和106b不完全分离的相互电连接的状态。因此，通过在将规定的外部端子106连接到阴极电极端子后实施电解镀敷法，可以对于包含半导体器件100a和100b的单元700内所有的外部端子106集中形成镀敷层。
在实施了镀敷层形成工序(S406)后，实施用于从单元700中分离各个半导体器件100的全切割工序(S407)。再有，全切割工序与上述半切割工序(S405)同样，利用分割装置(未图示)来进行。
具体地说，在形成了镀敷层108a和108b的单元700的上表面(与安装面正相反的面)上重新粘贴分割片600后，通过真空吸附固定在分割装置的工作台500上。然后，如图12所示，通过操作与切削刀片400a相比刀片宽度窄的分离刀片(“第二刀片”)400c，对单元700进行分割，分离成各个半导体器件100(S408)。然后，对于各个分离的半导体器件100实施外观检查、工艺检查、电特性检测等检查工序(S409)，最终仅将作为合格品挑选出的半导体器件出厂。
如图1所示，以上那样制造的半导体器件100，在外部端子106a和岛202之间熔接接合材料300而将该半导体器件100安装在印刷布线板200上的情况下，可从该半导体器件100的侧面目视确认接合材料300的状态。因此，容易进行基于接合材料状态的目视确认的是否合格的判定。此外，由于可在外部端子106中被切削的边缘部分熔接很多接合材料300，所以可以提高接合材料300的目视确认性和接合强度。
以上，根据其实施方式具体地说明了本发明的实施方式，但并不限于此，可在不脱离其主要精神的范围内进行各种变更。
例如，如图13所示，在上述半切割工序(S405)中，在贯通边界部中的外部端子106并切削至密封材料107后，通过用滚轮(未图示)等从与单元700的安装面正相反的面施加压力，也可以从单元700中分离出各个半导体器件100。通过实施所谓巧克力掰断(チヨコレ一トブレ一ク)，由于不需要全切割(S407)工序，所以可以削减该部分的该半导体器件100的制造工序数。
根据本发明，可以提供提高对熔接在外部端子上的接合材料的目视确认性的半导体器件及其制造方法。

Claims (10)

1.一种半导体器件，将半导体元件和与所述半导体元件电连接的电极通过具有绝缘性的密封材料进行密封，并使所述电极在介由接合材料与外部的安装基板接合的安装面的周围露出，其特征在于：
所述电极在所述安装面通过所述接合材料接合于所述安装基板的状态下，从包围所述安装面的侧面一侧呈现可目视所述接合材料的形状。
2.如权利要求1所述的半导体器件，其特征在于，所述电极呈现所述安装面的靠近所述侧面的边缘部被除去的形状。
3.如权利要求2所述的半导体器件，其特征在于，所述电极的所述边缘部被除去的形状面向所述安装面直线状地倾斜。
4.如权利要求2所述的半导体器件，其特征在于，所述电极的所述边缘部被除去的形状面向所述安装面弯曲状地倾斜。
5.如权利要求1至4任何一项所述的半导体器件，其特征在于，在露出所述安装面的所述电极上形成镀敷层。
6.一种半导体器件的制造方法，其特征在于，该方法包括：
密封工序，在通过接合材料与安装基板接合的安装面的周围露出电极的状态下，通过具有绝缘性的密封材料密封以导电箔划分的各划分区域中电连接的该电极和半导体元件；
切削工序，对于所述安装面侧的所述各划分区域的边界部，通过将第一刀片在垂直于所述安装面的方向上移动规定长度并进行切削，从而除去所述电极的靠近所述边界部的边缘部；以及
分离工序，在除去所述边缘部后，分离所述各划分区域。
7.如权利要求6所述的半导体器件的制造方法，其特征在于：
所述第一刀片的刀尖呈现V字形状，
在所述切削工序中，所述电极的靠近所述边界部的边缘部被切削为面向所述安装面直线状倾斜的形状。
8.如权利要求6所述的半导体器件的制造方法，其特征在于：
所述第一刀片的刀尖呈现U字形状，
在所述切削工序中，所述电极的靠近所述边界部的边缘部被切削为面向所述安装面弯曲状倾斜的形状。
9.如权利要求6至8任何一项所述的半导体器件的制造方法，其特征在于：
所述密封工序在将相邻的所述划分区域的相互的所述电极连接的状态下应使所述边界部露出来进行密封；
所述切削工序对于在所述边界部露出的所述电极，将所述第一刀片移动到面向所述安装面垂直的所述电极的厚度方向的一半进行切削；
作为所述切削工序和所述分离工序之间的中间工序，有在所述导电箔的安装面侧露出的所述电极上集中形成镀敷层的镀敷层形成工序。
10.如权利要求6至9任何一项所述的半导体器件的制造方法，其特征在于，通过使用比所述第一刀片宽度窄的第二刀片来切断所述边界部，从而分离所述各划分区域。
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